4H-SiC MOSFET Source and Body Laser Annealing Process

2020 ◽  
Vol 1004 ◽  
pp. 705-711
Author(s):  
Cristiano Calabretta ◽  
Marta Agati ◽  
Massimo Zimbone ◽  
Simona Boninelli ◽  
Andrea Castiello ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Surface Oxidation ◽  
Laser Pulses ◽  
Annealing Process ◽  
Surface Roughening ◽  
Dopant Activation ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Recovery Technique ◽  
Lattice Damage

This work describes the development of a new post-implant crystal recovery technique in 4H-SiC using XeCl (l=308 nm) multiple laser pulses in the ns regime. Characterization was carried out through micro-Raman spectroscopy, Photoluminescence (PL), Transmission Electron Microscopy (TEM) and outcomes were than compared with 1h thermally annealed at 1650-1770-1750 °C P implanted samples (source implant) and P and Al implanted samples for 30 minutes at 1650 °C (source and body implants). Experimental results demonstrate that laser annealing enables crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Unlike the results obtained with thermal annealing where stress up to 172 Mpa and high carbon vacancies (Vc) concentration is recorded, laser annealing provides almost stress free samples and much less defective crystal avoiding intra-bandgap carrier recombination. Implant was almost preserved except for step-bouncing and surface oxidation phenomena leading to surface roughening. However, the results of this work gives way to laser annealing process practicability for lattice damage recovery and dopant activation.

scholarly journals Laser Annealing of P and Al Implanted 4H-SiC Epitaxial Layers

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3362 ◽  
Author(s):  
Cristiano Calabretta ◽  
Marta Agati ◽  
Massimo Zimbone ◽  
Simona Boninelli ◽  
Andrea Castiello ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Surface Oxidation ◽  
Laser Pulses ◽  
Annealing Process ◽  
Epitaxial Layers ◽  
Extended Defects ◽  
Experimental Activity ◽  
Transmission Electron ◽  
Testing Chamber ◽  
Process Viability

This work describes the development of a new method for ion implantation induced crystal damage recovery using multiple XeCl (308 nm) laser pulses with a duration of 30 ns. Experimental activity was carried on single phosphorus (P) as well as double phosphorus and aluminum (Al) implanted 4H-SiC epitaxial layers. Samples were then characterized through micro-Raman spectroscopy, Photoluminescence (PL) and Transmission Electron Microscopy (TEM) and results were compared with those coming from P implanted thermally annealed samples at 1650–1700–1750 °C for 1 h as well as P and Al implanted samples annealed at 1650 °C for 30 min. The activity outcome shows that laser annealing allows to achieve full crystal recovery in the energy density range between 0.50 and 0.60 J/cm2. Moreover, laser treated crystal shows an almost stress-free lattice with respect to thermally annealed samples that are characterized by high point and extended defects concentration. Laser annealing process, instead, allows to strongly reduce carbon vacancy (VC) concentration in the implanted area and to avoid intra-bandgap carrier recombination centres. Implanted area was almost preserved, except for some surface oxidation processes due to oxygen leakage inside the testing chamber. However, the results of this experimental activity gives way to laser annealing process viability for damage recovery and dopant activation inside the implanted area.

Electrical and Structural Characterization of Boron Implanted Silicon Following Laser Thermal Processing

2002 ◽  
Vol 717 ◽  
Author(s):  
K. A. Gable ◽  
K. S. Jones ◽  
M. E. Law ◽  
L. S. Robertson ◽  
S. Talwar
Keyword(s):  
Melting Temperature ◽  
Thermal Processing ◽  
Laser Annealing ◽  
Substrate Surface ◽  
Surface Region ◽  
Process Window ◽  
Near Surface ◽  
Dopant Activation ◽  
Transmission Electron ◽  
Laser Thermal Processing

AbstractOne alternative to conventional rapid thermal annealing (RTA) of implants for ultra-shallow junction formation is that of laser annealing. Laser thermal processing (LTP) incorporates an excimer pulsed laser capable of melting the near surface region of the silicon (Si) substrate. The melt depth is dependent upon the energy density supplied by the irradiation source and the melting temperature of the substrate surface. A process window associated with this technique is able to produce similar junction depths over a range of energy densities due to the melting temperature depression established with pre-amorphization of the substrate surface prior to dopant incorporation. The process window of germanium (Ge) preamorphized, boron (B) doped Si was investigated. 200 mm (100) n-type Si wafers were preamorphized via 18 keV Ge+ implantation to 1x1015/cm2 and subsequently implanted with 1 keV B+ to doses of 1x1015/cm2, 3x1015/cm2, 6x1015/cm2, and 9x1015/cm2. The wafers were laser annealed from 0.50 J/cm2 to 0.88 J/cm2 using a 308 nm XeCl excimer irradiation source. Transmission electron microscopy (TEM) was used to determine the process window for each implant condition, and correlations between process window translation and impurity concentration were made. Four-point probe quantified dopant activation and subsequent deactivation upon post-LTP furnace annealing.

Nonmelt Laser Annealing of 1 Kev Boron Implanted Silicon

2001 ◽  
Vol 669 ◽  
Author(s):  
Susan Earles ◽  
Mark Law ◽  
Kevin Jones ◽  
Somit Talwar ◽  
Sean Corcoran
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
High Dose ◽  
Ramp Rate ◽  
Dopant Activation ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
Ultra Shallow Junctions ◽  
Defect Nucleation ◽  
Probe Measurements

ABSTRACTHeavily-doped, ultra-shallow junctions in boron implanted silicon using pulsed laser annealing have been created. Laser energy in the nonmelt regime has been supplied to the silicon surface at a ramp rategreater than 1010°C/sec. This rapid ramp rate will help decrease dopant diffusion while supplying enough energy to the surface to produce dopant activation. High-dose, non-amorphizing 1 keV, 1e15 ions/cm2 boron is used. Four-point probe measurements (FPP) show a drop in sheet resistance withnonmelt laser annealing (NLA) alone. Transmission electron microscopy (TEM) shows the NLA dramatically affects the defect nucleation resulting in fewer defects with post annealing. Hall mobility and secondary ion mass spectroscopy (SIMS) results are also shown.

Tem Investigation of Hydrogen Implanted and Laser Annealed Silicon

1994 ◽  
Vol 373 ◽  
Author(s):  
P. Zheng ◽  
R.G. Saint-Jacques ◽  
B. Terreault ◽  
G. Veilleux
Keyword(s):  
Structural Damage ◽  
Laser Annealing ◽  
Bubble Formation ◽  
Laser Pulses ◽  
Hydrogen Gas ◽  
Implantation Energy ◽  
Transmission Electron ◽  
Higher Temperature ◽  
Lower Temperature ◽  
Means Of Transmission

AbstractIn order to explain the relatively easy laser-induced desorption of hydrogen implanted in silicon, and particularly the lower temperature needed for desorption at higher implantation energy, the microstructural modifications produced by laser pulses were studied by means of transmission electron microscopy. The structural damage, such as defect clusters and hydrogen gas bubbles was observed. In the case of low dose implantation (H/Si ≤ 15&), most of the bubbles were produced during laser annealing rather than during implantation. This bubble formation in the course of desorption explains the higher temperature needed. When blisters are already present on the as-implanted surface, desorption starts at a lower temperature.

Process Optimization for Multiple-Pulses Laser Annealing for Boron Implanted Silicon with Germanium Pre-amorphization

2003 ◽  
Vol 765 ◽  
Author(s):  
Debora Poon ◽  
Byung Jin Cho ◽  
Yong Feng Lu ◽  
Leng Seow Tan ◽  
Mousumi Bhat ◽  
...  
Keyword(s):  
Laser Fluence ◽  
Laser Annealing ◽  
Amorphous Layer ◽  
Junction Depth ◽  
Dopant Activation ◽  
A Value ◽  
Damage Repair ◽  
Transmission Electron ◽  
Moderate Energy ◽  
Multiple Pulses

AbstractOne of the major advantages of multiple-pulses Laser Thermal Annealing (LTA) with moderate energy fluence is that good dopant activation can be achieved without further increases in junction depth by successive pulses. It is demonstrated that when the laser fluence is adjusted to a value that can melt the preamorphization implantation (PAI) layer but not the underlying silicon substrate, PAI layer depths control the junction depths. Hence, it is desirable to operate LTA in this regime since this allows for a tighter process control as opposed to when the junction depth is controlled solely by the laser fluence. High Resolution Transmission Electron Microscopy (HR-TEM) micrographs show that the degree of damage repair depends on the amorphous layer thickness as well as the number of pulses. Our study allows for the evaluation of the maximum allowable PAI depth for a given number of pulses in order to fully remove the damage caused by the PAI.

Luminescence from individual dislocations in II-VI and III-V semiconductors

1991 ◽  
Vol 49 ◽  
pp. 834-835
Author(s):  
J W Steeds
Keyword(s):  
Group Iv ◽  
Luminescence Properties ◽  
Carrier Recombination ◽  
Transmission Electron ◽  
Wide Range ◽  
Basic Physics ◽  
Semiconducting Compounds ◽  
Diamond Group ◽  
Non Destructive ◽  
Technological Significance

There is a wide range of experimental results related to dislocations in diamond, group IV, II-VI, III-V semiconducting compounds, but few of these come from isolated, well-characterized individual dislocations. We are here concerned with only those results obtained in a transmission electron microscope so that the dislocations responsible were individually imaged. The luminescence properties of the dislocations were studied by cathodoluminescence performed at low temperatures (~30K) achieved by liquid helium cooling. Both spectra and monochromatic cathodoluminescence images have been obtained, in some cases as a function of temperature.There are two aspects of this work. One is mainly of technological significance. By understanding the luminescence properties of dislocations in epitaxial structures, future non-destructive evaluation will be enhanced. The second aim is to arrive at a good detailed understanding of the basic physics associated with carrier recombination near dislocations as revealed by local luminescence properties.

scholarly journals (Ti,Al)O2 Whiskers Grown during Glow Discharge Nitriding of Ti-6Al-7Nb Alloy

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2658
Author(s):  
Krzysztof Szymkiewicz ◽  
Jerzy Morgiel ◽  
Łukasz Maj ◽  
Małgorzata Pomorska
Keyword(s):  
Surface Hardening ◽  
Surface Defects ◽  
Plasma Nitriding ◽  
Surface Roughening ◽  
Effective Surface ◽  
Plan View ◽  
Gas Nitriding ◽  
Transmission Electron ◽  
Temperature Window ◽  
20 Nm

Plasma nitriding of titanium alloys is capable of effective surface hardening at temperatures significantly lower than gas nitriding, but at a cost of much stronger surface roughening. Especially interesting are treatments performed at the lower end of the temperature window used in such cases, as they are least damaging to highly polished parts. Therefore identifying the most characteristic defects is of high importance. The present work was aimed at identifying the nature of pin-point bumps formed at the glow discharged plasma nitrided Ti-6Al-7Nb alloy using plan-view scanning and cross-section transmission electron microscopy methods. It helped to establish that these main surface defects developed at the treated surface are (Ti,Al)O2 nano-whiskers of diameter from 20 nm to 40 nm, and length up to several hundreds of nanometers. The performed investigation confirmed that the surface imperfection introduced by plasma nitriding at the specified range should be of minor consequences to the mechanical properties of the treated material.

scholarly journals Influence of the Interface Composition to the Superconductivity of Ti/PdAu Films

Nanomaterials ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 39
Author(s):  
Xiaolong Xu ◽  
Mauro Rajteri ◽  
Jinjin Li ◽  
Shuo Zhang ◽  
Jian Chen ◽  
...  
Keyword(s):  
Transition Edge Sensor ◽  
Energy Dispersive Spectrometer ◽  
Annealing Process ◽  
Bilayer Film ◽  
Superconducting Transition ◽  
Infiltration Process ◽  
Interface Composition ◽  
Transition Edge ◽  
Transmission Electron ◽  
Function Unit

In this work, the interface composition of the superconducting Ti/PdAu bilayer is tuned by an annealing process in N2 from 100 to 500 °C to control the superconducting transition temperature (Tc). This Ti-PdAu composition layer is characterized with a high-resolution transmission electron microscopy (HRTEM) and energy-dispersive spectrometer (EDS) to show the infiltration process. The surface topography, electrical, and cryogenic properties are also shown. The inter-infiltration of Ti and PdAu induced by the thermal treatments generates an intermixed layer at the interface of the bilayer film. Due to the enforced proximity effect by the annealing process, the Tc of Ti (55 nm)/PdAu (60 nm) bilayer thin films is tuned from an initial value of 243 to 111 mK which is a temperature that is suitable for the application as the function unit of a superconducting transition edge sensor.

Characterization of columns grown during KrF laser micromachining of Al2O3–TiC ceramics

2003 ◽  
Vol 18 (5) ◽  
pp. 1123-1130 ◽  
Author(s):  
V. Oliveira ◽  
R. Vilar
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Laser Pulses ◽  
Formation Mechanisms ◽  
X Ray ◽  
Reducing Conditions ◽  
Transmission Electron ◽  
Column Formation ◽  
Krf Laser

This paper aims to contribute to the understanding of column formation mechanisms in Al2O3–TiC ceramics micromachined using excimer lasers. Chemical and structural characterization of columns grown in Al2O3–TiC composite processed with 200 KrF laser pulses at 10 J/cm2 was carried out by scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analysis. Fully developed columns consist of a core of unprocessed material surrounded by an outer layer of Al2TiO5, formed in oxidizing conditions, and an inner layer, formed in reducing conditions, composed of TiC and Al3Ti or an AlTi solid solution. Possible mechanisms of column formation are discussed.

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