scholarly journals Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO2 Gate Insulator

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3968
Author(s):  
Cho ◽  
Cha ◽  
Kim
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Surface Condition ◽  
Chemical Vapor ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
Oxygen Plasma Treatment ◽  
High Electron ◽  
Threshold Voltage Shift

The influence of oxygen–plasma treatment on in situ SiN/AlGaN/GaN MOS high electron mobility transistor with SiO2 gate insulator was investigated. Oxygen–plasma treatment was performed on in situ SiN, before SiO2 gate insulator was deposited by plasma-enhanced chemical vapor deposition (PECVD). DC I-V characteristics were not changed by oxygen plasma treatment. However, pulsed I-V characteristics were improved, showing less dispersion compared to non-treated devices. During short-term gate bias stress, the threshold voltage shift was also smaller in a treated device than in an untreated one. X-ray photoemission spectroscopy also revealed that SiO2 on in situ SiN with oxygen–plasma treatment has an O/Si ratio close to the theoretical value. This suggests that the oxygen plasma treatment-modified surface condition of the SiN layer is favorable to SiO2 formation by PECVD.

Control of Threshold Voltage on the Excimer Laser Annealed Poly-Si Tfts by Oxygen Plasma Treatment on Poly-Si Surface

1995 ◽  
Vol 397 ◽  
Author(s):  
Jae-Ik Woo ◽  
Sang-Gul Lee ◽  
Dae-Gyu Moon ◽  
Chan-Hee Hong ◽  
Hoe-Sup Soh
Keyword(s):  
Plasma Treatment ◽  
Excimer Laser ◽  
Threshold Voltage ◽  
Oxygen Plasma ◽  
Treatment Time ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Oxygen Plasma Treatment ◽  
Oxide Deposition ◽  
Pressure Chemical

ABSTRACTOxygen plasma treatment was performed on the excimer laser annealed poly-Si surface, followed by gate oxide deposition with low pressure chemical vapor deposition (LPCVD) in order to control the threshold voltage of excimer laser annealed poly-Si thin film transistors (TFTs).Threshold voltages of n-channel TFTs increase from 0.4 to 2.8 V by varying the treatment time from 0 to 7 min. It is shown the effective charge density increased toward negative direction with increase of the treatment time.In addition to the increase of threshold voltage, the oxygen plasma treatment on the Si surface led to an increase in the deposition rate of LPCVD oxide films with an apparent reduction of carbon around the interface between gate insulator and poly-Si film after oxygen plasma treatment.

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

Enhanced Wettability of Nanocrystalline Diamond Films for Biocoating Applications

2012 ◽  
Vol 1395 ◽  
Author(s):  
Jason H. C. Yang ◽  
Kungen Teii
Keyword(s):  
Contact Angle ◽  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Film Surface ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
Polar Component ◽  
Oxygen Plasma Treatment

ABSTRACTNanocrystalline diamond (NCD) films are prepared from Ar-rich/N2/CH4 and Ar-rich/H2/CH4 mixtures by microwave plasma-enhanced chemical vapor deposition, and further treated by microwave hydrogen and oxygen plasma exposures separately to enhance the wetting property. The hydrogen plasma treatment has small effect on the surface roughness, while the oxygen plasma treatment forms fine protrusions on the film surface. Results show that the wettability of the hydrogen plasma treated NCD film is nearly constant or little improvement as the polar component of the apparent surface free energy is close to the as-deposit NCD film. In contrast, the wettability of the oxygen plasma treated NCD film is improved dramatically such that the contact angle is reduced from 92º and 4.7º to almost 0º for water and 1-bromonaphthalene, respectively, and the polar component increases significantly to 34 mJ/m2. The low contact angle suggests that the film is considerably a cell adhesive friendly surface, which is essential in maintaining multicellular structure, and thus making it a favorable wetting surface for biological and biomedical applications.

Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors

2015 ◽  
Vol 8 (11) ◽  
pp. 111001 ◽  
Author(s):  
Joel T. Asubar ◽  
Yoshiki Sakaida ◽  
Satoshi Yoshida ◽  
Zenji Yatabe ◽  
Hirokuni Tokuda ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Electron Mobility ◽  
Oxygen Plasma ◽  
High Electron Mobility Transistors ◽  
Oxygen Plasma Treatment ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

Changes in Surface Condition during Fabrication Process of Bioactive Apatite Nuclei Incorporated PEEK

2018 ◽  
Vol 782 ◽  
pp. 182-188 ◽  
Author(s):  
Takeshi Yabutsuka ◽  
Tomoko Hiruta ◽  
Shigeomi Takai ◽  
Takeshi Yao
Keyword(s):  
Sulfuric Acid ◽  
Plasma Treatment ◽  
Acid Treatment ◽  
Oxygen Plasma ◽  
Surface Condition ◽  
Fabrication Process ◽  
Carboxyl Groups ◽  
Oxygen Plasma Treatment ◽  
Sulfuric Acid Treatment ◽  
Sulfo Groups

We aimed to clarify the effect of sulfuric acid treatment and oxygen plasma treatment on changes in surface condition of PEEK substrates during fabrication process of bioactive apatite nuclei (AN) precipitated PEEK. We treated PEEK substrate by sulfuric acid treatment. This treatment contributed to provide micropores and sulfo groups on the surface of the PEEK. Next, we treated the PEEK with oxygen plasma at 200 W for 4 minutes. By this treatment, both generation of carboxyl groups and increase of sulfo groups were occurred and significant improvement of hydrophilicity of the surface of the PEEK was occurred. Finally, we precipitated AN on the surface of the PEEK. By this treatment, high apatite-forming ability was achieved.

scholarly journals Hydrophobic modification of bacterial cellulose using oxygen plasma treatment and chemical vapor deposition

Cellulose ◽  
2020 ◽  
Vol 27 (18) ◽  
pp. 10733-10746 ◽  
Author(s):  
Salomé Leal ◽  
Cecília Cristelo ◽  
Sara Silvestre ◽  
Elvira Fortunato ◽  
Aureliana Sousa ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Plasma Treatment ◽  
Bacterial Cellulose ◽  
Vapor Deposition ◽  
Oxygen Plasma ◽  
Chemical Vapor ◽  
Oxygen Plasma Treatment ◽  
Hydrophobic Modification
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