scholarly journals Synthesis of Multiwall Boron Nitride (BN) Nanotubes by a PVD Method Based on Vapor–Liquid–Solid Growth

Materials ◽  
2020 ◽  
Vol 13 (4) ◽  
pp. 915 ◽  
Author(s):  
Hao Guo ◽  
Yonggang Xu ◽  
Hetuo Chen ◽  
Zhengjuan Wang ◽  
Xiaojian Mao ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Liquid Drop ◽  
Synthesis Temperature ◽  
Vapor Liquid Solid ◽  
Vls Growth ◽  
Typical Length ◽  
Bn Nanotubes ◽  
Vapor Liquid

Multiwall boron nitride (BN) nanotubes were synthesized by a novel physical vapor deposition (PVD) method, in which the BN nanotubes grow on a compact substrate composed of AlN, γ-Al2O3, Y2O3, and carbon powders. The obtained BN nanotubes assemble in an orderly manner with a typical length of over one millimeter and a diameter of one-hundred nanometers. The hollow multiwall tubes have a spherical tip, which is presumed to be a liquid drop at the synthesis temperature, indicating the vapor–liquid–solid (VLS) growth mechanism.

Vapor-liquid-solid Growth of III-Nitride Nanowires and Heterostructures by Metal-Organic Chemical Vapor Deposition

2004 ◽  
Vol 831 ◽  
Author(s):  
J. Su ◽  
M. Gherasimova ◽  
G. Cui ◽  
J. Han ◽  
S. Lim ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Mesoporous Molecular Sieves ◽  
Organic Chemical ◽  
Vapor Liquid Solid ◽  
Metal Organic ◽  
Vls Growth ◽  
Organic Chemical Vapor Deposition ◽  
Vapor Liquid

ABSTRACTWe report flexible synthesis of III-Nitride nanowires and heterostructures by metal-organic chemical vapor deposition (MOCVD) via a catalytic vapor-liquid-solid (VLS) growth mechanism. Indium is used as an in-situ catalyst to facilitate and sustain the stability of liquid phase droplet for VLS growth based on thermodynamic consideration. The employment of mesoporous molecular sieves (MCM-41) helps to prevent the coalescence of catalyst droplets and to promote nucleation statistics. Cathodoluminescence (CL) of GaN nanowires shows near band-edge emission at 370nm, and strong E2 phonon peak is observed at room temperature in Raman scattering spectra. Both binary GaN and AlN nanowires have been synthesized by MOCVD. Three-dimensional AlN/GaN trunk-branch nanostructures are reported to illustrate the versatility of incorporating the VLS mechanism into MOCVD process.

VLS Growth of Si nanowhiskers on a H-terminated Si{111} surface

1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata
Keyword(s):  
High Pressure ◽  
Growth Condition ◽  
Growth Mechanism ◽  
Quantum Confinement ◽  
Critical Value ◽  
Extended Defects ◽  
Vapor Liquid Solid ◽  
Minimum Diameter ◽  
Vls Growth ◽  
Vapor Liquid

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Suppression of vapor-liquid-solid (VLS) mechanism in the growth of α-Sb2O4 nanobelts by a vapor-deposition approach

2021 ◽  
Vol 134 ◽  
pp. 106006
Author(s):  
Rosana A. Gonçalves ◽  
Herick H. da Silva Barros ◽  
Luana S. Araujo ◽  
Erica F. Antunes ◽  
Antje Quade ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Vapor Liquid Solid ◽  
Vapor Liquid

Monocrystalline InP Nanotubes

2003 ◽  
Vol 789 ◽  
Author(s):  
Erik. P. A. M. Bakkers ◽  
Louis F. Feiner ◽  
Marcel. A. Verheijen ◽  
Jorden A. van Dam ◽  
Silvano De Franceschi ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Blue Shift ◽  
Synthesis Temperature ◽  
Size Quantization ◽  
Defect States ◽  
Vapor Liquid Solid ◽  
Strong Polarization ◽  
Zinc Blende ◽  
Vls Growth ◽  
Zinc Blende Structure

ABSTRACTIndium phosphide (InP) nanowires and nanotubes have been synthesized via the vapor-liquid-solid (VLS) growth mechanism. The wires as well as the tubes are crystalline and have the (bulk) zinc blende structure. Compared to the nanowires the nantubes are formed at higher temperatures. A simple model for the formation of the nanotubes is presented. The diameter of the wires and the wall thickness of the tubes can be controlled by the synthesis temperature. Photoluminescence measurements on individual wires show a strong polarization dependency. Moreover, the nanostructures exhibit a considerable blue shift with respect to bulk emission as a result of size-quantization. In addition, this blue shift indicates that the optical properties are not dominated by defect states.

Synthetics of ZnO Nanowires on GaN/Sapphire Substrate by Gold Catalyst

2011 ◽  
Vol 339 ◽  
pp. 3-6
Author(s):  
Chun Hua Xu ◽  
Kelvin Leung ◽  
Charles Surya
Keyword(s):  
Electron Microscope ◽  
Vapor Deposition ◽  
Gold Catalyst ◽  
Chemical Vapor ◽  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Typical Length ◽  
Scanning Electron

ZnO nanowires were grown on Au-coated GaN layer on c-plane sapphire by chemical vapor deposition (CVD). As-prepared ZnO oxides were characterized by a scanning electron microscope (SEM) and a transmission electron microscope (TEM). The results show that the growth of ZnO nanowires strongly depends on the location of GaN/sapphire substrates. The diameters of the resulting nanowires were in the range 60 nm with typical length about 10μm. The formation of ZnO nanowires with different morphologies at various positions of the substrate is explained by the mechanisms of vapor-solid and vapor-liquid-solid, respectively.

Vapor–Liquid–Solid (VLS) Growth of NiCl2 Nanotubes via Reactive Gas Laser Ablation

2002 ◽  
Vol 14 (15) ◽  
pp. 1075 ◽  
Author(s):  
Y. Rosenfeld Hacohen ◽  
R. Popovitz-Biro ◽  
E. Grunbaum ◽  
Y. Prior ◽  
R. Tenne
Keyword(s):  
Laser Ablation ◽  
Vapor Liquid Solid ◽  
Gas Laser ◽  
Vls Growth ◽  
Reactive Gas ◽  
Vapor Liquid
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