Synthetics of ZnO Nanowires on GaN/Sapphire Substrate by Gold Catalyst

2011 ◽  
Vol 339 ◽  
pp. 3-6
Author(s):  
Chun Hua Xu ◽  
Kelvin Leung ◽  
Charles Surya
Keyword(s):  
Electron Microscope ◽  
Vapor Deposition ◽  
Gold Catalyst ◽  
Chemical Vapor ◽  
Zno Nanowires ◽  
Vapor Liquid Solid ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Typical Length ◽  
Scanning Electron

ZnO nanowires were grown on Au-coated GaN layer on c-plane sapphire by chemical vapor deposition (CVD). As-prepared ZnO oxides were characterized by a scanning electron microscope (SEM) and a transmission electron microscope (TEM). The results show that the growth of ZnO nanowires strongly depends on the location of GaN/sapphire substrates. The diameters of the resulting nanowires were in the range 60 nm with typical length about 10μm. The formation of ZnO nanowires with different morphologies at various positions of the substrate is explained by the mechanisms of vapor-solid and vapor-liquid-solid, respectively.

SiGe Nanowires Grown by LPCVD: Morphological and Structural Analysis

2010 ◽  
Vol 1258 ◽  
Author(s):  
Andrés Rodríguez ◽  
Jesús Sangrador ◽  
Tomás Rodríguez ◽  
Carmen Ballesteros ◽  
Carmelo Prieto ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vapor Liquid Solid ◽  
Chemical Vapor Deposition Reactor ◽  
X Ray ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Scanning Electron

AbstractSiGe nanowires were grown by the vapor-liquid-solid method using a low pressure chemical vapor deposition reactor and different flows of the GeH4 and Si2H6 gas precursors. The morphology of the nanowires was studied by field emission scanning electron microscopy, and the length, diameter and density of nanowires were determined. Their structure and crystallinity were analyzed by transmission electron microscopy and its related techniques. Energy dispersive X-ray emission of individual nanowires as well a Raman spectroscopy were used to determine their composition and to analyze its homogeneity.

Synthesis and Cathodoluminescence of β-Ga2O3 Nanowires with Holes

2008 ◽  
Vol 8 (3) ◽  
pp. 1284-1287
Author(s):  
Xitian Zhang ◽  
Zhuang Liu ◽  
Suikong Hark
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapor Deposition ◽  
Gallium Oxide ◽  
Chemical Vapor ◽  
Oxide Nanowires ◽  
X Ray ◽  
Transmission Electron ◽  
Reactive Surfaces ◽  
Scanning Electron

Gallium oxide nanowires were synthesized on Si (001) substrate by chemical vapor deposition, using a Ga/Ga2O3 mixture as a precursor and Au as a catalyst. The structure of the as-synthesized products was examined by X-ray powder diffraction and high-resolution transmission electron microscopy, and found to be monoclinic β-Ga2O3. The morphologies of the β-Ga2O3 nanowires were characterized by scanning electron microscopy. The majority of the nanowires contain holes along their length, but a few were also found without holes. The holes are believed to be formed by the reaction of adsorbed Ga droplets on reactive terminating surfaces of the nanowires. For nanowires where these reactive surfaces are not exposed, the reaction of Ga is retarded. Cathodoluminescence (CL) of the nanowires was measured. Three emission bands centered at 376, 454, and 666 nm, respectively, were observed.

Synthetic control over the structure and symmetry of carbon nanotubes: Towards biomedical applications

2011 ◽  
Vol 1297 ◽  
Author(s):  
Michael S. Lowry ◽  
Alfredo Rayms-Keller ◽  
Karen J. Long ◽  
Francisco Santiago ◽  
Victor H. Gehman ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Carbon Nanotubes ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Biomedical Applications ◽  
Chemical Vapor ◽  
Synthetic Control ◽  
Growth Site ◽  
Unique Chemical ◽  
Scanning Electron

ABSTRACTCarbon nanotubes (CNTs) are appealing materials for biomedical applications due to their unique chemical, electrical and mechanical properties. The emphasis of the present work is on controlling the structure and symmetry of carbon nanotubes by imposing an applied stress at the CNT growth site. CNTs were grown under these conditions using standard chemical vapor deposition (CVD) techniques and were subsequently characterized with a scanning electron microscope; the methodology and implications of this approach are discussed herein.

Fabrication of ZnO Bridging Nanowire Device by a Single-Step Chemical Vapor Deposition Method

2008 ◽  
Vol 1144 ◽  
Author(s):  
Yanbo Li ◽  
Ippei Nagatomo ◽  
Ryohei Uchino ◽  
Ichiro Yamada ◽  
Jean-Jacques Delaunay
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Gas Sensing ◽  
Gold Catalyst ◽  
Chemical Vapor ◽  
High Sensitivity ◽  
Single Step ◽  
Zno Nanowires ◽  
Oxide Semiconductor ◽  
Chemical Vapor Deposition Method

ABSTRACTZnO nanowires are directly integrated into a working device by a single-step chemical vapor deposition (CVD) method. Gold catalyst is patterned on a quartz glass substrate using a comb-shaped shadow mask and then ZnO is grown on the patterned substrate by CVD. Thick ZnO layers formed on the gold-patterned areas serve as native electrodes. Ultra-long (˜100 μm) ZnO nanowires grown across the gap between the ZnO electrodes and the nanowires serve as the sensing elements of the device. The device exhibits high sensitivity and fast response to UV illumination in air. Our method can be used to fabricate other metal oxide semiconductor bridging nanowire devices, which have promising applications in photodetection and gas sensing.

Investigation of 〈100〉-oriented etching pattern on diamond coated with Ni and Cu

2020 ◽  
Vol 34 (17) ◽  
pp. 2050155
Author(s):  
Naiyuan Cui ◽  
Fei Wang ◽  
Hanyuan Ding ◽  
Lei Guo
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Etching Pattern ◽  
Etching Mechanism ◽  
Atomic Force ◽  
Scanning Electron ◽  
Reactive Gas

Diamond etching of [Formula: see text] orientation is processed in chemical vapor deposition (CVD) chamber using H2 as reactive gas. Etching process happens on diamond substrates using a variety of etch mask materials including copper and nickel. Scanning electron microscope (SEM) and atomic force microscope (AFM) show different kinds of diamond etching pattern of two mask materials. It is observed that the etching pit of copper is tetrahedron, while the etching pit of nickel is step structure. This indicates diverse etching mechanism of diamond etched by different metal. Observing the surface etching topography of diamond and analyzing the etching mechanism of different metal can help study the growth of diamond by CVD and controllable etching of diamond.

Effect of Experimental Factors in the Growth of Carbon Nanotubes from CO2 by MPECVD Process

2014 ◽  
Vol 14 (1) ◽  
pp. 38
Author(s):  
Fritzie Hannah Baldovino ◽  
Joseph L. Auresenia
Keyword(s):  
Carbon Nanotubes ◽  
Gas Chromatography ◽  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Silicon Wafer ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Scanning Electron

The effects of experimental factors such as type of catalyst (nickel and cobalt) and substrate (iron and silicon wafer) in the growth of carbon nanotubes (CNT) from CO2 by microwave plasma-enhanced chemical vapor deposition (MPECVD) was systematically studied. Catalyst size and CNT grown were examined using scanning electron microscope (SEM). Furthermore, gas chromatography (GC) was used to analyze the effluent gas. Moreover, suitable type of catalyst and substrate were determined in terms on the amount of CNT grown, purity, and carbon conversion.Keywords : carbon nanotubes, chemical vapor deposition, nanotechnology

scholarly journals Microspheres for the Growth of Silicon Nanowires via Vapor-Liquid-Solid Mechanism

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Arancha Gómez-Martínez ◽  
Francisco Márquez ◽  
Eduardo Elizalde ◽  
Carmen Morant
Keyword(s):  
Silicon Nanowires ◽  
Vapor Deposition ◽  
Gold Catalyst ◽  
Chemical Vapor ◽  
Carbon Microspheres ◽  
Vapor Liquid Solid ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Source ◽  
Vapor Liquid Solid Mechanism ◽  
Vapor Liquid

Silicon nanowires have been synthesized by a simple process using a suitable support containing silica and carbon microspheres. Nanowires were grown by thermal chemical vapor deposition via a vapor-liquid-solid mechanism with only the substrate as silicon source. The curved surface of the microsized spheres allows arranging the gold catalyst as nanoparticles with appropriate dimensions to catalyze the growth of nanowires. The resulting material is composed of the microspheres with the silicon nanowires attached on their surface.

Catalyst-Free InGaP Nanoneedles Grown on Si Substrate by Metalorganic Chemical Vapor Deposition

2013 ◽  
Vol 333-335 ◽  
pp. 1975-1978
Author(s):  
Peng Zhang ◽  
Yan Liu ◽  
Jing Wei Guo ◽  
Xiao Pin Zhang
Keyword(s):  
Chemical Vapor Deposition ◽  
Electron Microscope ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Si Substrate ◽  
Sem Images ◽  
Catalyst Free ◽  
Metalorganic Chemical ◽  
Scanning Electron

Catalyst-free InGaP nanoneedles were grown on Si substrate via metalorganic chemical vapor deposition. From scanning electron microscope (SEM) images, various nanoneedles were observed and the relevant growth mechanism was discussed.

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