scholarly journals Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 144
Author(s):  
Ying Zhao ◽  
Shengrui Xu ◽  
Hongchang Tao ◽  
Yachao Zhang ◽  
Chunfu Zhang ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Hole Concentration ◽  
Light Output ◽  
Hall Effect Measurement ◽  
High Conductivity ◽  
Light Emitting ◽  
Superlattice Structure ◽  
Delta Doping ◽  
Doping Technique ◽  
P Type

A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials.

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

2010 ◽  
Vol 19 (4) ◽  
pp. 047205 ◽  
Author(s):  
Huang Jun-Yi ◽  
Fan Guang-Han ◽  
Zheng Shu-Wen ◽  
Niu Qiao-Li ◽  
Li Shu-Ti ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Emitting ◽  
P Type

Obtainable P-Type ZnO Film Doped with Li by Sol-Gel Method

2015 ◽  
Vol 734 ◽  
pp. 796-801 ◽  
Author(s):  
Ting Ting Wang ◽  
Miao Miao Dai ◽  
Ya Jun Yan ◽  
Hong Zhang ◽  
Yi Min Yu
Keyword(s):  
Hole Concentration ◽  
Sol Gel ◽  
Green Emission ◽  
Hall Effect Measurement ◽  
Zno Films ◽  
Zno Film ◽  
Oriented Growth ◽  
Coating Method ◽  
Thermal Annealing Process ◽  
P Type

A series of Li-doped zinc oxide ( ZnO ) thin films were deposited on quartz glass by sol-gel and spin coating method. Their p-type conductivities could be achieved by subsequently thermal annealing process, which were characterized by Hall effect measurement. An optimized result with resistivity of 46.8 Ω cm, Hall mobility of 1.35 cm2/V s, and hole concentration of 9.89×1016 cm-3 was achieved at the annealing temperature of 700 °C. The films exhibited highly (002) oriented growth in all the cases. Strong green emission centered at 510 nm was observed by photoluminescence spectra in Li-doped ZnO films at room temperature.

Analysis on the enhanced hole concentration in p-type GaN grown by indium-surfactant-assisted Mg delta doping

2014 ◽  
Vol 252 (5) ◽  
pp. 1109-1115 ◽  
Author(s):  
Yingda Chen ◽  
Hualong Wu ◽  
Guanglong Yue ◽  
Zimin Chen ◽  
Zhiyuan Zheng ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Delta Doping ◽  
P Type ◽  
Surfactant Assisted

High Doped p-Type GaN Grown by Alternative Co-Doping Technique

2002 ◽  
Vol 719 ◽  
Author(s):  
Souhachi Iwai ◽  
Hideki Hirayama ◽  
Yoshinobu Aoyagi
Keyword(s):  
Hole Concentration ◽  
Conventional Technique ◽  
Algan Layer ◽  
Co Doping ◽  
Doping Technique ◽  
Aln Buffer ◽  
P Type ◽  
Source Materials ◽  
Constant Feeding ◽  
Mg Doped

AbstractWe investigated the electrical properties of Mg-doped GaN grown by alternative pulse supplies of source and dopant materials in metalorganic vapor phase epitaxy. We obtained the hole concentration of 6×1018cm-3 for p-type GaN grown on a sapphire substrate by repetition of supply and purging of Ga and Mg sources in the constant NH3 flow, while that of p-type GaN grown by the constant feeding of Ga and Mg sources was 2×1018cm-3. By using alternative feedings of Ga source and NH3 with Mg-Si co-doping, we obtained a highly hole concentration of 2×1019cm-3 for p-type GaN which was grown directly on a low temperature AlN buffer layer. We also obtained the hole concentration of 6×1018cm-3 for p-type GaN which was grown on an AlGaN layer on a SiC substrate by alternative co-doping technique. The activation energies for Mg-doped GaN grown by the pulse feedings of source materials were lower than that for GaN grown by continuous supplies of source materials as used in the conventional technique.

Study on Preparation and Application Performance of P-Type Conducting SnO2 Ceramic Target

2014 ◽  
Vol 599 ◽  
pp. 338-345 ◽  
Author(s):  
Jia Miao Ni ◽  
Xiu Jian Zhao ◽  
Bin Bin Li ◽  
Min Dong Zheng ◽  
Ting Peng
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hole Concentration ◽  
High Conductivity ◽  
Raw Material ◽  
Molding Pressure ◽  
High Quality ◽  
Rutile Structure ◽  
X Ray ◽  
And Performance ◽  
P Type

To obtain high quality SnO2 film, high conductivity and high quality SnO2 target should be obtained first. In this paper, high-conductivity Sb: SnO2 (ATO) ceramic targets were fabricated using SnO2, Sb2O3 powder as raw material. The chemical composition and morphology of SnO2 targets were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The effect of different forming pressure on the morphology and electrical properties of targets were studied in our paper. The results show that molding pressure has a significant impact on the density of ATO targets and performance during sintering process. When molding pressure is 15 Mpa, the target has the minimum resistivity for 2.38 Ωcm. XRD results show that ATO target possess tetragonal rutile structure with the preferred orientation of (101). XPS indicate that the chemical state of Sn element in the target is Sn4+ and that of Sb is Sb3+. In addition, the shrinkage rate of conductive SnO2 target is 10.34% so that target can be used to sputtering in the magnetron sputter. The preparation process is simple and cost of SnO2 target is low. The transparent conductive SnO2 thin film was successfully deposited on glass substrate with good performance of high hole concentration and low resistivity of 3.334×1019 cm-3 and 3.588 Ω·cm, respectively. The average transmission of p-type SnO2 films was above 80% in the visible light range.

AlN and AlGaN by MOVPE for UV Light Emitting Devices

2008 ◽  
Vol 590 ◽  
pp. 175-210 ◽  
Author(s):  
Hiroshi Amano ◽  
Masataka Imura ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Isamu Akasaki
Keyword(s):  
Vapor Phase ◽  
High Efficiency ◽  
Uv Light ◽  
Hole Concentration ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
High Hole Concentration ◽  
P Type

The fundamental growth issues of AlN and AlGaN on sapphire and SiC using metalorganic vapor phase epitaxy, particularly the growth of AlN and AlGaN on a groove-patterned template are reviewed. In addition, the conductivity control of AlGaN is shown. The conductivity control of p-type AlGaN, particularly the realization of a high hole concentration, is essential for realizing high-efficiency UV and DUV LEDs and LDs.

Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces

2008 ◽  
Vol 93 (20) ◽  
pp. 203103 ◽  
Author(s):  
Chung Chieh Yang ◽  
Chia Feng Lin ◽  
Chun Min Lin ◽  
Cheng Chien Chang ◽  
Kuei Ting Chen ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
P Type

Enhanced Light Output of InGaN-Based Light Emitting Diodes with Roughed p-Type GaN Surface by Using Ni Nanoporous Template

2012 ◽  
Vol 29 (9) ◽  
pp. 098502 ◽  
Author(s):  
Zhi-Guo Yu ◽  
Peng Chen ◽  
Guo-Feng Yang ◽  
Bin Liu ◽  
Zi-Li Xie ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Light Output ◽  
Light Emitting ◽  
Nanoporous Template ◽  
P Type
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