High Doped p-Type GaN Grown by Alternative Co-Doping Technique

2002 ◽  
Vol 719 ◽  
Author(s):  
Souhachi Iwai ◽  
Hideki Hirayama ◽  
Yoshinobu Aoyagi
Keyword(s):  
Hole Concentration ◽  
Conventional Technique ◽  
Algan Layer ◽  
Co Doping ◽  
Doping Technique ◽  
Aln Buffer ◽  
P Type ◽  
Source Materials ◽  
Constant Feeding ◽  
Mg Doped

AbstractWe investigated the electrical properties of Mg-doped GaN grown by alternative pulse supplies of source and dopant materials in metalorganic vapor phase epitaxy. We obtained the hole concentration of 6×1018cm-3 for p-type GaN grown on a sapphire substrate by repetition of supply and purging of Ga and Mg sources in the constant NH3 flow, while that of p-type GaN grown by the constant feeding of Ga and Mg sources was 2×1018cm-3. By using alternative feedings of Ga source and NH3 with Mg-Si co-doping, we obtained a highly hole concentration of 2×1019cm-3 for p-type GaN which was grown directly on a low temperature AlN buffer layer. We also obtained the hole concentration of 6×1018cm-3 for p-type GaN which was grown on an AlGaN layer on a SiC substrate by alternative co-doping technique. The activation energies for Mg-doped GaN grown by the pulse feedings of source materials were lower than that for GaN grown by continuous supplies of source materials as used in the conventional technique.

Sublimation growth and property characterization of p-type 4H-SiC by Al B co-doping technique

2019 ◽  
Vol 167 ◽  
pp. 76-80 ◽  
Author(s):  
Xuejian Xie ◽  
Li Sun ◽  
Xiufang Chen ◽  
Xianglong Yang ◽  
Xiaobo Hu ◽  
...  
Keyword(s):  
Co Doping ◽  
Doping Technique ◽  
P Type ◽  
Sublimation Growth ◽  
Property Characterization

High quality p-type ZnO film grown on ZnO substrate by nitrogen and tellurium co-doping

2009 ◽  
Vol 1201 ◽  
Author(s):  
Seunghwan Park ◽  
Tsutomu Minegishi ◽  
jinsub Park ◽  
Hyunjae Lee ◽  
Toshinori Taishi ◽  
...  
Keyword(s):  
Electron Concentration ◽  
Hole Concentration ◽  
Nitrogen Concentration ◽  
Zno Film ◽  
Acceptor Pair ◽  
High Quality ◽  
Co Doping ◽  
Donor Acceptor ◽  
Doped Zno ◽  
P Type

AbstractNitrogen and tellurium co-doped ZnO (ZnO:[N+Te]) films have been grown on (0001) ZnO substrate by plasma-assisted molecular beam epitaxy. The electron concentration of tellurium doped ZnO (ZnO:Te) gradually increases, compared that of undoped ZnO (u-ZnO). On the other hand, conductivity of ZnO:[N+Te] changes from n-type to p-type characteristic with a hole concentration of 4×1016 cm-3. However, nitrogen doped ZnO film (ZnO:N) still remain as n-type conductivity with a electron concentration of 2.5×1017 cm-3. Secondary ion mass spectroscopy reveals that nitrogen concentration ([N]) of ZnO:[N+Te] film (2×1021 cm-3) is relatively higher than that of ZnO:N film (3×1020 cm-3). 10 K photoluminescence spectra shows that considerable improvement of emission properties of ZnO:[N+Te] with an emergence of narrow acceptor bound exciton (A°X, 3.359 eV) and donor-acceptor pair (DAP, 3.217 eV), compared with those of u-ZnO. Consequently, high quality p-type ZnO with high N concentration is realized by using Te and N co-doping technique due to reduction of Madelung energy.

Hydrogenation of Gallium Nitride

1993 ◽  
Vol 325 ◽  
Author(s):  
M. S. Brandt ◽  
N. M. Johnson ◽  
R. J. Molnar ◽  
R. Singh ◽  
T. D. Moustakas
Keyword(s):  
Comparative Study ◽  
Conduction Band ◽  
Room Temperature ◽  
Hole Concentration ◽  
Conduction Band Edge ◽  
Order Of Magnitude ◽  
Si Doped ◽  
Donor State ◽  
P Type ◽  
Mg Doped

AbstractA comparative study of the effects of hydrogen in n-type (unintentionally and Si-doped) as well as p-type (Mg-doped) MBE-grown GaN is presented. Hydrogenation above 500°C reduces the hole concentration at room temperature in the p-type material by one order of magnitude. Three different microscopic effects of hydrogen are suggested: Passivation of deep defects and of Mg-acceptors due to formation of hydrogen-related complexes and the introduction of a hydrogenrelated donor state 100 meV below the conduction band edge.

Photocurrent Spectroscopy Investigations of Mg-Related Defects Levels in p-Type GaN

1999 ◽  
Vol 595 ◽  
Author(s):  
S. J. Chung ◽  
O. H. Cha ◽  
H. K. Cho ◽  
M. S. Jeong ◽  
C-H. Hong ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Chemical Vapor ◽  
Nitrogen Atmosphere ◽  
Organic Chemical ◽  
Substitutional Site ◽  
Photocurrent Spectroscopy ◽  
Metal Organic ◽  
P Type ◽  
Two Peaks ◽  
Mg Doped

AbstractThe defect levels associated with Mg impurity in p-type GaN films were systematically investigated in terms of doping concentration by photocurrent spectroscopy. Mg-doped GaN samples were grown on sapphire substrate by metal organic chemical vapor deposition and annealed in nitrogen atmosphere at 850 for 10 minutes. At room temperature, PC spectra showed two peaks at 3.31 and 3.15 eV associated with acceptor levels formed at 300 and 142 meV above valence band in as grown samples. But, after the thermal annealing, PC spectra exhibited various additional peaks depending on the Mg concentration. In the GaN samples with Mg concentration around 6 7 1017 cm−3, we have observed PC peaks related to Mg at 3.31 as well as 3.02 eV and carbon acceptor at 3.17 eV. For moderately Mg doped GaN samples, i.e., the hole concentration p=3 4 1017 cm−3, additional peak was observed at around 0.9 eV which can be attributed to defects related to Ga vacancy. For relatively low Mg doped samples whose hole concentrations are 1 2 1017 cm−3, additional broad peak was observed at around 1.3 eV. This peak may be related to the yellow band luminescence. As the Mg concentration is increased, the concentration of Ga vacancies can be reduced because Mg occupies the substitutional site of Ga in GaN lattice. When the hole concentration is above 6 7 1017 cm−3, the yellow luminescence and Ga vacancy related peaks disappeared completely.

scholarly journals Co-doping Characteristics of Si and Zn with Mg in P-type GaN

2000 ◽  
Vol 5 (S1) ◽  
pp. 322-328 ◽  
Author(s):  
K.S. Kim ◽  
C.S. Oh ◽  
M.S. Han ◽  
C.S. Kim ◽  
G.M. Yang ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Chemical Vapor ◽  
Structural Quality ◽  
Specific Contact Resistance ◽  
Hole Density ◽  
Co Doping ◽  
Order Of Magnitude ◽  
Gan Film ◽  
Co Doped ◽  
Mg Doped

We investigated the doping characteristics of Mg doped, Mg-Si co-doped, and Mg-Zn co-doped GaN films grown by metalorganic chemical vapor deposition. We have grown p-GaN film with a resistivity of 1.26 Ωcm and a hole density of 4.3 × 1017 cm−3 by means of Mg-Si co-doping technique. The Mg-Si co-doping characteristic was also explained effectively by taking advantage of the concept of competitive adsorption between Mg and Si during the growth. For Mg-Zn co-doping, p-GaN showing a low electrical resistivity (0.7 Ωcm) and a high hole concentration (8.5 × 1017 cm−3) was successfully grown without the degradation of structural quality of the film. Besides, the measured specific contact resistance for Mg-Zn co-doped GaN film is 5.0 × 10−4 cm2, which is lower value by one order of magnitude than that for only Mg doped GaN film (1.9 × 10−3Ωcm2).

Epitaxial Growth and Properties of Mg-Doped Gan Film Produced by Atmospheric Mocvd System With Three Layered Lammar Flow Gas Injection

1997 ◽  
Vol 482 ◽  
Author(s):  
N. Akutsu ◽  
H. Tokunaga ◽  
I. Waki ◽  
A. Yamaguchi ◽  
K. Matsumoto
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Hole Concentration ◽  
Gas Injection ◽  
Chemical Vapor ◽  
Free Hole ◽  
Mg Doping ◽  
Doping Effects ◽  
P Type ◽  
Mg Doped

AbstractMg-doped GaN films with a variety of Mg concentrations were grown on sapphire (0001) by horizontal atmospheric metalorganic chemical vapor deposition (MOCVD) system with three layered laminar flow gas injection in an attempt to study the Mg doping effects on film quality. The increase of Mg concentration induced an increase of x-ray rocking curve full width at half maximum (FWHM) and degradation of surface morphology. Secondary ion mass spectroscopy (SIMS) analysis shows increase of Si and O, associated with Mg-doping concentration. Si and O concentrations of Mg-doped film are up to 5×1016cm−3 and 5×1017cm−3 at Mg concentration of 4.5×1019cm−3, respectively. Strong 380nm emission and weak 430nm emission were observed by photoluminescence (PL) measurement at room temperature for as-grown Mg-doped GaN films which shows p-type conductivity after thermal annealing. While, in highliy Mg-doped GaN films which do not show the p-type conduction after thermal annealing, 430nm and/or 450nm emission were dominating. The highest room temperature free hole concentration achieved was p=2.5× 1018cm−3 with mobility μp=l.9cm2/V s.

scholarly journals Enhanced P-Type GaN Conductivity by Mg Delta Doped AlGaN/GaN Superlattice Structure

Materials ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 144
Author(s):  
Ying Zhao ◽  
Shengrui Xu ◽  
Hongchang Tao ◽  
Yachao Zhang ◽  
Chunfu Zhang ◽  
...  
Keyword(s):  
Semiconductor Device ◽  
Hole Concentration ◽  
Light Output ◽  
Hall Effect Measurement ◽  
High Conductivity ◽  
Light Emitting ◽  
Superlattice Structure ◽  
Delta Doping ◽  
Doping Technique ◽  
P Type

A method of combining the AlGaN/GaN superlattices and Mg delta doping was proposed to achieve a high conductivity p-type GaN layer. The experimental results provided the evidence that the novel doping technique achieves superior p-conductivity. The Hall-effect measurement indicated that the hole concentration was increased by 2.06 times while the sheet resistivity was reduced by 48%. The fabricated green-yellow light-emitting diodes using the achieved high conductivity p-type GaN layer showed an 8- and 10-times enhancement of light output power and external quantum efficiency, respectively. The subsequent numerical calculation was conducted by using an Advanced Physical Model of Semiconductor Device to reveal the mechanism of enhanced device performance. This new doping technique offers an attractive solution to the p-type doping problems in wide-bandgap GaN or AlGaN materials.

MBE GROWTH AND CHARACTERIZATION OF Mg-DOPED III-NITRIDES ON SAPPHIRE

2009 ◽  
Vol 19 (01) ◽  
pp. 113-119
Author(s):  
X. CHEN ◽  
K. D. MATTHEWS ◽  
D. HAO ◽  
W. J. SCHAFF ◽  
L. F. EASTMAN ◽  
...  
Keyword(s):  
Hole Concentration ◽  
Mbe Growth ◽  
Molecular Beam Epitaxial ◽  
Strong Surface ◽  
Photo Response ◽  
Molecular Beam Epitaxial Growth ◽  
P Type ◽  
Iv Curves ◽  
Mg Doped

Plasma-assisted molecular beam epitaxial growth of Mg -doped GaN and InGaN on a sapphire substrate is investigated in this study. Electrical characteristics of p -type GaN strongly depend on the flux of Mg acceptors and the growth temperature. Only the intermediate range of Mg fluxes (beam equivalent pressures near 1×10-9T) produce p -type GaN with good electrical properties, and a maximum hole concentration of 3.5 × 1018 cm-3 is obtained with a Hall mobility of 2.1 cm2/V·s. Due to the strong surface accumulation of electrons, Hall measurements do not indicate p -type polarity for In fraction beyond 11%. In contrast, hot probe measurements show that p -polarity can be measured for the entire range of Mg -doped In mole fractions. Electroluminescence also indicates p -polarity for Ga -rich mole fractions. In x Ga1- x N p - n homojunctions are fabricated and tested. All GaN devices show low series resistance (0.03 ohm-cm2) and insignificant parasitic leakage. IV curves of all three InGaN homojunctions show rectifying characteristics under dark conditions and photo-response under outdoor sunlight, indicating the existence of holes in InGaN with up to 40% In content.

scholarly journals Electrical Characterization of MOVPE-Grown P-Type GaN:Mg Against Annealing Temperature

1999 ◽  
Vol 4 (S1) ◽  
pp. 665-670 ◽  
Author(s):  
Shizuo Fujita ◽  
Mitsuru Funato ◽  
Doo-Cheol Park ◽  
Yoshifumi Ikenaga ◽  
Shigeo Fujita
Keyword(s):  
Annealing Temperature ◽  
Hole Concentration ◽  
Electrical Characterization ◽  
Sapphire Substrates ◽  
Electrical Degradation ◽  
Scattering Centers ◽  
Hall Effect Measurements ◽  
P Type ◽  
Mg Doped

Hall effect measurements have been applied for the electrical characterization of p-type Mg-doped GaN grown by metalorganic vapor-phase epitaxy on sapphire substrates in terms of annealing temperature for dehydrogenation (N2 annealing) and hydrogenation (H2 annealing) of the acceptors. With the N2 annealing temperature from 600 to 900 °C for dehydrogenation, both hole concentration and mobility increases, showing more activation of acceptors and less incorporation of unfavorable scattering centers probably originating from Mg-H bondings. The N2 annealing at higher than the growth temperature results in reduced hole concentration, but the mobility gets higher. Some defects compensating acceptors may be induced at high temperature annealing, but they seem to be no scattering centers and be inactivated by successive hydrogenation and re-dehydrogenation at the optimum dehydrogenation temperature 900 °C. The electrical degradation of GaN due to thermal damage is not very destructive and can be well recovered by annealing treatments.

scholarly journals Enhanced Electrical Properties and Stability of P-Type Conduction in ZnO Transparent Semiconductor Thin Films by Co-Doping Ga and N

Coatings ◽  
2020 ◽  
Vol 10 (11) ◽  
pp. 1069
Author(s):  
Chien-Yie Tsay ◽  
Wan-Yu Chiu
Keyword(s):  
Thin Films ◽  
Hole Concentration ◽  
Sol Gel ◽  
Co Doping ◽  
Semiconductor Thin Films ◽  
Doped Zno ◽  
Transparent Semiconductor ◽  
P Type ◽  
Type Conduction ◽  
Co Doped

P-type ZnO transparent semiconductor thin films were prepared on glass substrates by the sol-gel spin-coating process with N doping and Ga–N co-doping. Comparative studies of the microstructural features, optical properties, and electrical characteristics of ZnO, N-doped ZnO (ZnO:N), and Ga–N co-doped ZnO (ZnO:Ga–N) thin films are reported in this paper. Each as-coated sol-gel film was preheated at 300 °C for 10 min in air and then annealed at 500 °C for 1 h in oxygen ambient. X-ray diffraction (XRD) examination confirmed that these ZnO-based thin films had a polycrystalline nature and an entirely wurtzite structure. The incorporation of N and Ga–N into ZnO thin films obviously refined the microstructures, reduced surface roughness, and enhanced the transparency in the visible range. X-ray photoelectron spectroscopy (XPS) analysis confirmed the incorporation of N and Ga–N into the ZnO:N and ZnO:Ga–N thin films, respectively. The room temperature PL spectra exhibited a prominent peak and a broad band, which corresponded to the near-band edge emission and deep-level emission. Hall measurement revealed that the ZnO semiconductor thin films were converted from n-type to p-type after incorporation of N into ZnO nanocrystals, and they had a mean hole concentration of 1.83 × 1015 cm−3 and a mean resistivity of 385.4 Ω·cm. In addition, the Ga–N co-doped ZnO thin film showed good p-type conductivity with a hole concentration approaching 4.0 × 1017 cm−3 and a low resistivity of 5.09 Ω·cm. The Ga–N co-doped thin films showed relatively stable p-type conduction (>three weeks) compared with the N-doped thin films.

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