scholarly journals Enhanced Mechanical Properties of Metallic Glass Thin Films via Modification of Structural Heterogeneity

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 999
Author(s):  
Xindi Ma ◽  
Kang Sun ◽  
Peiyou Li ◽  
Nizhen Zhang ◽  
Qing Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Modulus ◽  
Metallic Glass ◽  
Substrate Temperature ◽  
Rate Sensitivity ◽  
Structural Heterogeneity ◽  
Higher Temperature ◽  
Spectrum Intensity ◽  
Substrate Temperatures

The structure of Cu50Zr50 and Co56Ta35B9 metallic glass thin films (MGTF) was effectively tailored via various applied substrate temperatures by means of the magnetron sputtering technology. Obviously enhanced hardness and elastic modulus are achieved by different compositional MGTFs by increasing the substrate temperature. Compared with the CuZr MGTFs, the CoTaB MGTF deposited at 473 K displays the smaller strain-rate sensitivity exponent, m, and a weaker spectrum intensity based on the nanoindentation creep test, suggesting its better creep resistance. In addition, the STZ volume of the CoTaB MGTF significantly decreases after depositing at higher temperature. According to the nano-scratch analysis, the CoTaB MGTF at the substrate temperatures of 473 K performs the shallower scratch width and the larger H3/E2 value, indicating its better tribological property.

Mechanical Properties Of Ferro-Electric Composite Thin Films

1997 ◽  
Vol 505 ◽  
Author(s):  
C. G. Fountzoulas ◽  
S. Sengupta
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Substrate Temperature ◽  
Single Crystals ◽  
Failure Load ◽  
Optical Analysis ◽  
Nominal Thickness ◽  
Adhesion Failure ◽  
Substrate Temperatures ◽  
Cohesion Failure

ABSTRACTFerro-electric (BSTO) films of 1 μm nominal thickness were deposited on single crystals of sapphire at substrate temperatures varying from 30 °C to 700 °C. Optical analysis showed that the thin films were amorphous up to 500 °C, while at 700 °C they were polycrystalline. The microstructure of the thin films was columnar at all substrate temperatures. The film microhardness increased with increasing substrate temperature. While the cohesion failure load of the films remained fairly constant, the adhesion failure load increased with increasing substrate temperature.

scholarly journals Structural and Mechanical Properties of Nanostructured C-Ag Thin Films Synthesized by Thermionic Vacuum Arc Method

2018 ◽  
Vol 2018 ◽  
pp. 1-10 ◽  
Author(s):  
Rodica Vladoiu ◽  
Aurelia Mandes ◽  
Virginia Dinca-Balan ◽  
Vilma Bursikova
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Modulus ◽  
Silicon Substrate ◽  
Vacuum Arc ◽  
Average Roughness ◽  
Thermionic Vacuum Arc ◽  
Induced Aggregation ◽  
Ag Film

Nanostructured C-Ag thin films of 200 nm thickness were successfully synthesized by the Thermionic Vacuum Arc (TVA) method. The influence of different substrates (glass, silicon wafers, and stainless steel) on the microstructure, morphology, and mechanical properties of nanostructured C-Ag thin films was characterized by High-Resolution Transmission Electron Microscopy (HRTEM), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and TI 950 (Hysitron) nanoindenter equipped with Berkovich indenter, respectively. The film’s hardness deposited on glass (HC-Ag/Gl = 1.8 GPa) was slightly lower than in the case of the C-Ag film deposited on a silicon substrate (HC-Ag/Si = 2.2 GPa). Also the apparent elastic modulus Eeff was lower for C-Ag/Gl sample (Eeff = 100 GPa) than for C-Ag/Si (Eeff = 170 GPa), while the values for average roughness are Ra=2.9 nm (C-Ag/Si) and Ra=10.6 (C-Ag/Gl). Using the modulus mapping mode, spontaneous and indentation-induced aggregation of the silver nanoparticles was observed for both C-Ag/Gl and C-Ag/Si samples. The nanocomposite C-Ag film exhibited not only higher hardness and effective elastic modulus, but also a higher fracture resistance toughness to the silicon substrate compared to the glass substrate.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Influence of Substrate Temperature on Some Properties of Close-Spacing Thermally Evaporated CdTe Thin Films

2008 ◽  
Vol 55-57 ◽  
pp. 881-884 ◽  
Author(s):  
Thitinai Gaewdang ◽  
N. Wongcharoen ◽  
P. Siribuddhaiwon ◽  
N. Promros
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Suitable Condition ◽  
Xrd Analysis ◽  
Thermal Evaporation Method ◽  
Cdte Thin Films ◽  
Influence Of Substrate ◽  
Substrate Temperatures ◽  
Deposited Films ◽  
Resistance Value

CdTe thin films with different substrate temperatures have been deposited by thermal evaporation method on glass substrate in vacuum chamber having low pressure about 3.0x10-5 mbar. According to XRD analysis, CdTe thin films are polycrystalline belonging to cubic structure with preferential orientation of (111) plane. The strongest peak intensity of XRD is observed in the film prepared with substrate temperature of 150°C. Band gap and band tail values of the as-deposited films were evaluated from the optical transmission spectra. The lowest dark sheet resistance value was obtained from the film prepared with substrate temperature of 150°C as well. Regarding to our experimental results, it may be indicated that the 150°C substrate temperature is the most suitable condition in preparing CdTe thin films for solar cell applications.

Supercapacitive Properties of Cobalt Oxide Thin Films Prepared by Electrostatic Spray Deposition Technique at Different Substrate Temperature

2016 ◽  
Vol 675-676 ◽  
pp. 261-264
Author(s):  
Kasidid Chansaengsri ◽  
Korakot Onlaor ◽  
Thutiyaporn Thiwawong ◽  
Benchapol Tunhoo
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Substrate Temperature ◽  
Cobalt Oxide ◽  
Spray Deposition ◽  
High Specific Capacitance ◽  
Oxide Thin Films ◽  
Electrostatic Spray Deposition ◽  
Electrostatic Spray ◽  
Substrate Temperatures

In this work, cobalt oxide thin films were prepared by electrostatic spray deposition (ESD) technique. The influence of the substrate temperatures on properties of film was investigated. Phase transformation of cobalt oxide thin films due to the effect of different substrate temperature was also observed. Cyclic voltammetry was used to measure the performance of cobalt oxide supercapacitor. At higher substrate temperature, the cobalt oxide thin films exhibit the high specific capacitance due to the effect of phase transformation in cobalt oxide films.

EFFECT OF SUBSTRATE TEMPERATURE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF NiTsPc THIN FILMS

2019 ◽  
Vol 27 (03) ◽  
pp. 1950124 ◽  
Author(s):  
MOHAMMED YARUB HANI ◽  
ADDNAN H. AL-AARAJIY ◽  
AHMED M. ABDUL-LETTIF
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Energy Gap ◽  
Chemical Spray Pyrolysis ◽  
Structural And Optical Properties ◽  
Absorption Bands ◽  
Tauc Plot ◽  
Substrate Temperatures

Nickel(II) phthalocyanine-tetrasulfonic acid tetrasodium salt (NiTsPc) thin films were deposited on glass substrates at different substrate temperatures ([Formula: see text]) by chemical spray pyrolysis (CSP) technique. The substrate temperature varied from 110∘C to 310∘C in 50∘C steps. The substrate surface temperature is the main parameter that determines the film morphology and properties of the thin films. The structural properties of the deposited NiTsPc thin films were investigated by X-ray diffraction (XRD) and from the obtained results, it was shown that depositing thin films using 210∘C as [Formula: see text] results in higher crystallinity. Atomic force microscope (AFM) was employed to obtain the surface topography and to calculate the roughness and grain size. The smoothest thin film surface was obtained when using at 160∘C, while the highest roughness was obtained at 310∘C. The optical properties were investigated by ultraviolet visible (UV-Vis) spectrophotometer and fluorescence spectrophotometer. From the absorption spectra recorded in the wavelength range 190–1100[Formula: see text]nm, two absorption bands were observed, which are known as Soret and Q-band. By observing the absorption spectrum, it can be concluded that the deposited thin films at 110∘C–310∘C have direct energy gap. From Tauc plot relation, the energy gap ([Formula: see text]) was calculated. The values of the energy gap were between 3.05 and 3.14[Formula: see text]eV. It was observed that different [Formula: see text] highly affects the structural and optical properties of the deposited thin films. The crystallinity, grain size, roughness and the optical properties were strongly affected by the different substrate temperatures.

Electrical Properties of Pulsed Laser Deposited ZnO Thin Films

2009 ◽  
Vol 67 ◽  
pp. 121-125
Author(s):  
Chattopadhyay Sourav ◽  
Kumar Nath Tapan
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Hall Mobility ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Zno Thin Films ◽  
Zno Films ◽  
Visible Absorption ◽  
Substrate Temperatures

Epitaxial Single-crystal ZnO thin films have been grown on c-plane (0001) sapphire by Pulsed Laser Deposition process at different substrate temperatures (300 – 800 °C) with 10-1 mbar oxygen pressure. The thicknesses of the films have been varied by varying number of pulses with a repetition rate of 10 pulse/sec. It is found that the sheet resistivity of ZnO thin films grown on c-plane sapphires are in the order of 10-2 Ω-cm and it increases with increasing substrate temperatures and film thickness. The carrier concentrations and Hall mobility are found to be in the order of 1017 cm-3 and ~195 cm2/V-s, respectively. The Hall mobility slightly decreases with increase of substrate temperature and thickness of the films. It is also found that the ZnO films are structurally uniform and well oriented with perfect wurtzite structure with c/a ratio 5.1. We have also deposited non-epitaxial ZnO films on (100) p-Silicon substrates at the same conditions. From HR FE-SEM micrographs, surface morphology of ZnO films grown at lower substrate temperature are found to be uniform compared to the films grown at higher temperatures showing non-uniformity and misoriented wurtzite structures. However, the surface morphology of ZnO flims grown epitaxially on (0001) sapphire are found to be more uniform and it does not change much with growth temperature. The resistivity of the films grown on p-Silicon at higher temperatures is in the order of 103 Ω-cm whereas films grown at lower substrate temperatures show comparatively lower resistivities (~ 102 Ω-cm). From the recorded UV-Visible absorption spectrum the band gap of the film has been estimated to be 3.38 eV.

PLASMA-ASSISTED VACUUM-COATING PROCESSES

1992 ◽  
Vol 06 (01) ◽  
pp. 1-24 ◽  
Author(s):  
GERHARD KIENEL
Keyword(s):  
Thin Films ◽  
Melting Point ◽  
Substrate Temperature ◽  
Important Variable ◽  
Coating Material ◽  
Melting Points ◽  
Coating Materials ◽  
Substrate Temperatures

For the properties of thin films produced in a vacuum the most important variable is the mobility of the particles in the course of condensation, which is dependent on the melting point of the coating material, the substrate temperature and the energy of the particles as they strike the substrate. Because of the generally higher particle energies in plasma-assisted processes, under comparable coating conditions lower substrate temperatures suffice than in the case of conventional evaporative coating. Especially with coating materials having higher melting points, compact films can be produced only if the particle energies are sufficiently high.

Correlation of the Stress-Temperature History with Microstructure in A1-0.5Cu and A1-0.15Pd Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
D. D. Knorr ◽  
K.P. Rodbell
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Room Temperature ◽  
Temperature History ◽  
Thermal Expansion Mismatch ◽  
Grain Sizes ◽  
Substrate Temperatures ◽  
Precipitate Structure

AbstractBlanket films (1 μm thick) of both A1-0.5Cu and A1-0.15Pd were deposited at room temperature, 150°C, and 300°C. Stress in the as-deposited wafers increased with substrate temperature, as expected from the thermal expansion mismatch on cooling. All conditions were tiicrmally cycled to 450°C three times while continuously monitoring stress. The shapes of the curves were different for the two alloys because precipitates dissolve and reprecipitate in AlCu, but are present over the entire temperature range in AlPd. Lesser differences were evident comparing the stress-temperature behavior for the various substrate temperatures within a single alloy. The precipitate structure also influences the grain growth during thermal cycling, where substantially larger median grain sizes are found in AlCu compared to AlPd.

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