scholarly journals Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1296
Author(s):  
Myeong-Cheol Shin ◽  
Young-Jae Lee ◽  
Dong-Hyeon Kim ◽  
Seung-Woo Jung ◽  
Michael A. Schweitz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Gallium Oxide ◽  
Drain Current ◽  
Lower Surface ◽  
Ozone Treatment ◽  
Static Induction Transistors ◽  
Radio Frequency Sputtering ◽  
Static Induction ◽  
Uv Ozone

In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga2O3) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga2O3 films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelectron spectroscopy data, lower surface roughness (3.51 nm) and resistivity (319 Ω·cm), and higher mobility (4.01 cm2V−1s−1). The gate leakage current is as low as 1.0 × 10−11 A at VGS = 10 V by the depletion layer formed between n-Ga2O3 and p-epi SiC at the gate region with a PN heterojunction. The UV/O3-treated SITs exhibit higher (approximately 1.64 × 102 times) drain current (VDS = 12 V) and on/off ratio (4.32 × 105) than non-treated control devices.

Preparation of Ge (100) Substrates for High-Quality Epitaxial Growth of Group IV Materials

2003 ◽  
Vol 794 ◽  
Author(s):  
Mark Nowakowski ◽  
Jordana Bandaru ◽  
L.D. Bell ◽  
Shouleh Nikzad
Keyword(s):  
Epitaxial Growth ◽  
Chemical Treatment ◽  
Photoelectron Spectroscopy ◽  
High Energy ◽  
Ozone Treatment ◽  
High Quality ◽  
Surface Evolution ◽  
Chemical Treatments ◽  
Before And After ◽  
Uv Ozone

ABSTRACTWe compare various wet chemical treatments, in preparing high-quality Ge (100) surfaces suitable for molecular beam epitaxy (MBE). Various surface treatments are explored such as UV-ozone treatment followed by exposure to chemical solutions such as de-ionized (DI) water, hydrofluoric acid (HF), or hydrochloric acid (HCl). Chemical treatments to remove the oxide are performed in a nitrogen environment to prevent further formation of surface oxide prior to surface analysis. Following chemical treatments, in situ reflection high-energy electron diffraction (RHEED) analysis is performed to observe the surface evolution as a function of temperature. In a separate chamber, we analyze each sample, before and after chemical treatment by x-ray photoelectron spectroscopy (XPS) to directly determine the oxide desorption following each chemical treatment. Our results of this comparative study, the effectiveness of each chemical treatment, and the stability of the passivated surface suggest that UV ozone cleaning, followed by 10% HCl is the best choice for removing most of the oxide. Furthermore, we present evidence of high quality epitaxial growth of SnxGe1−x on wafers prepared by our method.

Simple Self-Aligned Fabrication Process for Silicon Carbide Static Induction Transistors

2004 ◽  
Vol 457-460 ◽  
pp. 1125-1128
Author(s):  
K. Dynefors ◽  
V. Desmaris ◽  
Joakim Eriksson ◽  
Per Åke Nilsson ◽  
Niklas Rorsman ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Fabrication Process ◽  
Static Induction Transistors ◽  
Static Induction

Passivation of InGaAs/InP heterostructures

1999 ◽  
Vol 573 ◽  
Author(s):  
R. Driad ◽  
Z. H. Lu ◽  
W. R. McKinnon ◽  
S. Laframboise ◽  
S. P. McAlister ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Layer Structure ◽  
Chemical Vapor ◽  
High Energy ◽  
Current Gain ◽  
Ozone Treatment ◽  
High Energy Resolution ◽  
Large Area ◽  
Extrinsic Base ◽  
Uv Ozone

ABSTRACTIn this study we report different surface treatments and device designs that can be used to improve the performance of InGaAs/InP heterostructure devices. The surface properties of InGaAs (100) after sulfur or UV-ozone passivation were investigated by photoluminescence and high energy-resolution X-ray photoelectron spectroscopy. The base leakage current and the dc current gain of InGaAs/InP heterostructure bipolar transistors (HBTs) have been used to evaluate the efficiency of the passivation treatments. Although these treatments successfully passivated large area HBTs, the improved device characteristics degraded after a dielectric was deposited by plasma enhanced chemical vapor deposition (PECVD) or even just with time. Nevertheless, we found a combined surface treatment that is successful even under PECVD deposition – a UV-ozone treatment that produces a sacrificial oxide that is then removed by HF. This approach will be contrasted with a different method based on an optimized HBT layer structure with a thin InP emitter. In this case, the thin layer of depleted InP from the emitter left on the extrinsic base passivates the surface, and no treatment is required.

Functionalization of Carbon Nanotube Surface via UV/O3 Treatment

2007 ◽  
Vol 121-123 ◽  
pp. 1407-1410 ◽  
Author(s):  
Jang Kyo Kim ◽  
Man Lung Sham
Keyword(s):  
Carbon Nanotube ◽  
Functional Groups ◽  
Photoelectron Spectroscopy ◽  
Ozone Treatment ◽  
Resin Matrix ◽  
Surface Functional Groups ◽  
Matrix Nanocomposites ◽  
Uv Ozone ◽  
Polymer Matrix Nanocomposites ◽  
Practical Implications

The carbon nanotube (CNT) surface is successfully modified using the UV/Ozone treatment and a triethylenetetramine (TETA) solution for use as the reinforcement for polymer matrix nanocomposites. These treatments along with ultrasonication are aimed to disperse the CNTs uniformly in the resin matrix, as well as to provide the CNT surface with chemical functionalities for adhesion with resin. Fourier transform infra-red (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS) are performed to evaluate the changes in chemical structure and surface functional groups arising from the chemical treatment. The practical implications of the surface functional groups for improving the interfacial adhesion are discussed.

Removal of Poly(Dimethylsiloxane) Contamination from Silicon Surfaces with UV/Ozone Treatment

1995 ◽  
Vol 385 ◽  
Author(s):  
F. D. Egitto ◽  
L. J. Matienzo ◽  
J. Spalik ◽  
S. J. Fuerniss
Keyword(s):  
Contact Angle ◽  
Integrated Circuit ◽  
Photoelectron Spectroscopy ◽  
Organic Contaminants ◽  
Ozone Treatment ◽  
Water Contact ◽  
Pdms Film ◽  
A Value ◽  
Time Required ◽  
Uv Ozone

ABSTRACTUV/ozone cleaning is known to be effective for removing thin organic contaminants, but removal of silicon containing contaminants is questionable. Organo-silicon contaminants, e.g., silicones, can result from a variety of integrated circuit chip and electronic packaging fabrication processes. In this investigation, films of poly(dimethylsiloxane) (PDMS) on silicon substrates, with and without a gold coating, have been used to simulate such contamination up to a thickness of 50 nm. Although treatment consistently reduced the advancing DI water contact angle, in some cases from a value greater than 100° to a value less than 5°, the hydrophilic nature of the treated surfaces was not due to complete contaminant removal, i.e., a significant amount of modified contaminant remained on the surface. High resolution x-ray photoelectron spectroscopy (XPS) in the Si 2p region suggest that O-Si-C bonds in the siloxane, observed prior to treatment, are converted to SiOx, where x is between 1.6 and 2. The time required to reduce the contact angle to a minimum value was greater for the thicker PDMS film samples. Deflection testing was used to evaluate the adhesion of an epoxybased adhesive to intentionally-contaminated silicon chips, before and after UV/ozone treatment. Although PDMS contamination induced loss of adhesion between the chip and the adhesive, complete conversion to silicon oxides by UV/ozone treatment of contaminants having a thickness of 5.0 nm has been demonstrated to restore adhesion to a value equivalent to that of uncontaminated silicon chip surfaces.

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