Effect of Zinc Oxide Films on Si Substrates Growth by Microwave Plasma Jet Sintering System

2013 ◽  
Vol 22 ◽  
pp. 1-8
Author(s):  
Chun Hsi Su ◽  
Chia Min Huang
Keyword(s):  
Gas Flow ◽  
Microwave Plasma ◽  
Optical Emission ◽  
Plasma Jet ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Plasma Energy ◽  
Zinc Oxide Films ◽  
Process Pressure

Microwave plasma techniques offered many advantages over conventional fabricating methods. However, few studies have used microwave plasma energy to sinter traditional ceramics. Thus, the aim of this work is microwave plasma Jet sintering system (MPJSS) and simulate analyze the electric field of ZnO films on Si (100) substrates. Ansoft HFSS consists of MPJSS modules for the calculation of ZnO films electromagnetic field. Sinter of ZnO films occurs at approximately N2 with a 10 sccm gas flow rate for a process pressure of 35 Torr and several power of 300W, 600W, 900W and 1200W applied power. Optical emission spectroscopic (OES) studies of N2 microwave plasmas, X-ray diffraction (XRD), Micro-Raman, and FESEM spectrometry were used to characterize the produced ZnO films. The results of XRD and Micro-Raman showed that the synthesized ZnO films had a high crystalline wurzite structure. The Zn2SiO4 peaks reveal an increase of the crystals dimensions with the increase of the E-field. Intensity of diffraction peak of ZnO films increases with increasing microwave powers in MPJSS.

scholarly journals Fabrication of Highly Porous and Pure Zinc Oxide Films Using Modified DC Magnetron Sputtering and Post-Oxidation

Materials ◽  
2021 ◽  
Vol 14 (20) ◽  
pp. 6112
Author(s):  
Se-Yong Park ◽  
Soon-Ho Rho ◽  
Hwan-Seok Lee ◽  
Kyoung-Min Kim ◽  
Hee-Chul Lee
Keyword(s):  
Magnetron Sputtering ◽  
Gas Flow ◽  
Composite Films ◽  
Zno Films ◽  
Porous Films ◽  
Pure Zinc ◽  
Surface Areas ◽  
Zinc Oxide Films ◽  
Process Pressure ◽  
Oxygen Ratio

Porous films of metals and metal oxides exhibit larger surface areas and higher reactivities than those of dense films. Therefore, they have gained growing attention as potential materials for use in various applications. This study reports the use of a modified direct current magnetron sputtering method to form porous Zn-ZnO composite films, wherein a subsequent wet post-oxidation process is employed to fabricate pure porous ZnO films. The porous Zn-ZnO composite films were initially formed in clusters, and evaluation of their resulting properties allowed the optimal conditions to be determined. An oxygen ratio of 0.3% in the argon gas flow resulted in the best porosity, while a process pressure of 14 mTorr was optimal. Following deposition, porous ZnO films were obtained through rapid thermal annealing in the presence of water vapor, and the properties and porosities of the obtained films were analyzed. An oxidation temperature of 500 °C was optimal, with an oxidation time of 5 min giving a pure ZnO film with 26% porosity. Due to the fact that the films produced using this method are highly reliable, they could be employed in applications that require large specific surface areas, such as sensors, supercapacitors, and batteries.

scholarly journals Synthesis of ultrasmooth nanostructured diamond films by microwave plasma chemical vapor deposition using a He/H2/CH4/N2gas mixture

2006 ◽  
Vol 21 (10) ◽  
pp. 2675-2682 ◽  
Author(s):  
S. Chowdhury ◽  
Damon A. Hillman ◽  
Shane A. Catledge ◽  
Valery V. Konovalov ◽  
Yogesh K. Vohra
Keyword(s):  
Gas Flow ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Optical Emission ◽  
X Ray Diffraction ◽  
Plasma Chemical Vapor Deposition ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gas Flow Ratio

Ultrasmooth nanostructured diamond (USND) films were synthesized on Ti–6Al–4V medical grade substrates by adding helium in H2/CH4/N2plasma and changing the N2/CH4gas flow from 0 to 0.6. We were able to deposit diamond films as smooth as 6 nm (root-mean-square), as measured by an atomic force microscopy (AFM) scan area of 2 μm2. Grain size was 4–5 nm at 71% He in (H2+ He) and N2/CH4gas flow ratio of 0.4 without deteriorating the hardness (∼50–60 GPa). The characterization of the films was performed with AFM, scanning electron microscopy, x-ray diffraction (XRD), Raman spectroscopy, and nanoindentation techniques. XRD and Raman results showed the nanocrystalline nature of the diamond films. The plasma species during deposition were monitored by optical emission spectroscopy. With increasing N2/CH4feedgas ratio (CH4was fixed) in He/H2/CH4/N2plasma, a substantial increase of CN radical (normalized by Balmer Hαline) was observed along with a drop in surface roughness up to a critical N2/CH4ratio of 0.4. The CN radical concentration in the plasma was thus correlated to the formation of ultrasmooth nanostructured diamond films.

scholarly journals The Effect of Gas Flow on Plasma Parameters Induced by Microwave

2018 ◽  
Vol 15 (2) ◽  
pp. 205-210
Author(s):  
Baghdad Science Journal
Keyword(s):  
Gas Flow ◽  
Microwave Plasma ◽  
Debye Length ◽  
Optical Emission ◽  
Plasma Jet ◽  
Plasma Electron ◽  
Skin Depth ◽  
Plasma Parameters ◽  
Flow Through ◽  
Non Thermal Plasma

In this paper, construction microwaves induced plasma jet(MIPJ) system. This system was used to produce a non-thermal plasma jet at atmospheric pressure, at standard frequency of 2.45 GHz and microwave power of 800 W. The working gas Argon (Ar) was supplied to flow through the torch with adjustable flow rate by using flow meter, to diagnose microwave plasma optical emission spectroscopy(OES) was used to measure the important plasma parameters such as electron temperature (Te), residence time (Rt), plasma frequency (?pe), collisional skin depth (?), plasma conductivity (?dc), Debye length(?D). Also, the density of the plasma electron is calculated with the use of Stark broadened profiles

Analysis of Sputtered Zinc Oxide Films

1980 ◽  
Vol 38 ◽  
pp. 416-417
Author(s):  
T. A. Emma ◽  
M. P. Singh
Keyword(s):  
Electron Microscopy ◽  
Zinc Oxide ◽  
Piezoelectric Materials ◽  
Oxide Films ◽  
Optical Quality ◽  
Zno Films ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Sputtered Films ◽  
Zinc Oxide Films

Optical quality zinc oxide films have been characterized using reflection electron diffraction (RED), replication electron microscopy (REM), scanning electron microscopy (SEM), and X-ray diffraction (XRD). Significant microstructural differences were observed between rf sputtered films and planar magnetron rf sputtered films. Piezoelectric materials have been attractive for applications to integrated optics since they provide an active medium for signal processing. Among the desirable physical characteristics of sputtered ZnO films used for this and related applications are a highly preferred crystallographic texture and relatively smooth surfaces. It has been found that these characteristics are very sensitive to the type and condition of the substrate and to the several sputtering parameters: target, rf power, gas composition and substrate temperature.

scholarly journals Influence of gas flow on argon microwave plasma jet at atmospheric pressure

2011 ◽  
Vol 206 (6) ◽  
pp. 1449-1453 ◽  
Author(s):  
Shouichiro Iio ◽  
Kosuke Yanagisawa ◽  
Chizuru Uchiyama ◽  
Katsuya Teshima ◽  
Naomichi Ezumi ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Gas Flow ◽  
Microwave Plasma ◽  
Plasma Jet

ELECTRICAL AND OPTICAL PROPERTIES OF MULTILAYER SOL GEL ZnO COATINGS

2006 ◽  
Vol 20 (23) ◽  
pp. 3357-3364 ◽  
Author(s):  
TALAAT MOUSSA HAMMAD
Keyword(s):  
Carrier Mobility ◽  
Sol Gel ◽  
Dip Coating ◽  
Free Carrier ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
Zinc Oxide Films ◽  
Free Carrier Density ◽  
Fine Microstructure

Multilayer transparent conducting zinc oxide films have been prepared on boro-silicate substrates by the commercially sol gel dip coating process. Each layer was fired at 550°C in a conventional furnace for 15 min. The final coatings were then tempered under a flux of forming gas ( N 2/ H 2) at 400°C for 2 h. The coatings were characterized by surface stylus profiling and optical spectroscopy (UV-NIR). Results show that (1) ZnO films with electrical resistivity of 6×10-4 Ω· cm , free carrier mobility of approximately 77 cm 2/ V · s and free carrier density of approximately 6.14×1019 cm -3 are obtained for multilayers 310 nm and (2) the transmittance is approximately 60.4% and the reflectance is nearly 34.7% are obtained at a wavelength of 800 nm when the thickness of the ZnO multilayers is 310 nm. The crystal structure and grain orientation of ZnO films were determined by X-ray diffraction. SEM investigations revealed that the surface morphology of growing ZnO films on boro-silicate substrate is dominated by the smooth surface with a fine microstructure.

Studying of Plasma- Polymerized Pyrrole at Variable Gas Flow Rates Via Plasma Jet

2021 ◽  
Vol 19 (48) ◽  
pp. 44-51
Author(s):  
Saba Jawad Kadhem
Keyword(s):  
Flow Rate ◽  
Atmospheric Pressure ◽  
Gas Flow ◽  
Flow Characteristics ◽  
Atmospheric Pressure Plasma ◽  
Optical Emission ◽  
Plasma Jet ◽  
Nonequilibrium Plasma ◽  
Nano Particles ◽  
Vis Spectroscopy

     In this manuscript has investigated the synthesis of plasma-polymerized pyrrole (C4H5N) nano-particles prepared by the proposed atmospheric pressure nonequilibrium plasma jet through the parametric studies, particularly gas flow rate (0.5, 1 and 1.5 L/min). The plasma jet which used operates with alternating voltage 7.5kv and frequency 28kHz. The plasma-flow characteristics were investigated based on optical emission spectroscopy (OES). UV-Vis spectroscopy was used to characterize the  oxidization  state for polypyrrole. The major absorption appears around 464.1, 449.7 and 435.3  nm at the three flow rate of argon gas. The chemical composition and structural properties of the contained samples which synthesized at 0.5 L/min as a argon flow rate were analyzed by scanning electron microscopy (SEM), Fourier transformation infrared spectroscopy (FTIR), Raman spectroscopy and X-ray diffraction (XRD). SEM point to a uniform distribution of polypyrrole (PPY) nanoparticles matrix. XRD technique showed a semicrystalline pattern for PPY)thin film. It is expected, that the high-quality plasma polymer grown by atmospheric pressure plasma jet method contributes to serving as conducting materials.

The Preparation of the Highly Preferred Orientation of AlN Thin Films on ZnO Substrates

2013 ◽  
Vol 669 ◽  
pp. 181-184
Author(s):  
Nan Ding ◽  
Li Ming Xu ◽  
Bao Jia Wu ◽  
Guang Rui Gu
Keyword(s):  
Thin Films ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Promising Candidate ◽  
Si Substrates ◽  
Good Crystallinity ◽  
Crystallite Structure

Zinc oxide (ZnO) films were prepared on Si substrates and then aluminum nitride (AlN) films were deposited on ZnO films by radio frequency (RF) magnetron sputtering. The crystal orientation, crystallite structure and surface morphology of AlN/ZnO films were characterized by X-ray diffraction (XRD), Raman spectrum and scanning electron microscopy (SEM). It was indicated that the AlN films were closely deposited on the ZnO film and had good crystallinity. Moreover, about 1μm-sized crystal particles with high c-axial orientation distributed uniformly on the AlN/ZnO film surface. It was indicated that ZnO could be a promising candidate as buffer layer for preparation of AlN thin films.

scholarly journals The effect of liquid target on a nonthermal plasma jet—imaging, electric fields, visualization of gas flow and optical emission spectroscopy

2018 ◽  
Vol 51 (6) ◽  
pp. 065202 ◽  
Author(s):  
Vesna V Kovačević ◽  
Goran B Sretenović ◽  
Elmar Slikboer ◽  
Olivier Guaitella ◽  
Ana Sobota ◽  
...  
Keyword(s):  
Electric Fields ◽  
Emission Spectroscopy ◽  
Gas Flow ◽  
Optical Emission Spectroscopy ◽  
Nonthermal Plasma ◽  
Optical Emission ◽  
Plasma Jet

Residual Stresses in Sputtered ZnO Films on (100) Si Substrates by XRD

2009 ◽  
Vol 1201 ◽  
Author(s):  
Florine Conchon ◽  
Pierre-Olivier Renault ◽  
Philippe Goudeau ◽  
Eric Le Bourhis ◽  
Elin Sondergard ◽  
...  
Keyword(s):  
Residual Stresses ◽  
Annealing Temperature ◽  
Protective Coatings ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Thermally Activated ◽  
Post Deposition

AbstractResidual stresses in sputtered ZnO films on Si are investigated and discussed. By means of X-ray diffraction, we show that as-deposited ZnO films encapsulated or not by Si3N4 protective coatings are highly compressively stressed. Moreover, a transition of stress is observed as a function of the post-deposition annealing temperature. After a heat treatment at 800°C, ZnO films are tensily stressed while ZnO films encapsulated by Si3N4 are stress-free. With the aid of in-situ X-ray diffraction, we argue that this thermally-activated stress relaxation can be attributed to a variation of the chemical composition of the ZnO films.

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