scholarly journals ALD Deposited ZnO:Al Films on Mica for Flexible PDLC Devices

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 1011
Author(s):  
Dimitre Z. Dimitrov ◽  
Zih Fan Chen ◽  
Vera Marinova ◽  
Dimitrina Petrova ◽  
Chih Yao Ho ◽  
...  
Keyword(s):  
Near Infrared ◽  
Atomic Layer ◽  
Optical Transmittance ◽  
Force Microscopy ◽  
Flexible Polymer ◽  
Layer Deposition ◽  
Polymer Dispersed ◽  
Muscovite Mica ◽  
Infrared Spectral ◽  
Continuous Bending

In this work, highly conductive Al-doped ZnO (AZO) films are deposited on transparent and flexible muscovite mica substrates by using the atomic layer deposition (ALD) technique. AZO-mica structures possess high optical transmittance at visible and near-infrared spectral range and retain low electric resistivity, even after continuous bending of up to 800 cycles. Structure performances after bending tests have been supported by atomic force microscopy (AFM) analysis. Based on performed optical and electrical characterizations AZO films on mica are implemented as transparent conductive electrodes in flexible polymer dispersed liquid crystal (PDLC) devices. The measured electro-optical characteristics and response time of the proposed devices reveal the higher potential of AZO-mica for future ITO-free flexible optoelectronic applications.

scholarly journals Atomic Layer-Deposited Al-Doped ZnO Thin Films for Display Applications

Coatings ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 539 ◽  
Author(s):  
Dimitre Dimitrov ◽  
Che-Liang Tsai ◽  
Stefan Petrov ◽  
Vera Marinova ◽  
Dimitrina Petrova ◽  
...  
Keyword(s):  
Thin Films ◽  
Liquid Crystal ◽  
Indium Tin Oxide ◽  
Near Infrared ◽  
Atomic Layer ◽  
Optical Transmittance ◽  
Flexible Polymer ◽  
Polymer Dispersed ◽  
Infrared Spectral ◽  
Aluminum Doped Zinc Oxide

The integration of high uniformity, conformal and compact transparent conductive layers into next generation indium tin oxide (ITO)-free optoelectronics, including wearable and bendable structures, is a huge challenge. In this study, we demonstrate the transparent and conductive functionality of aluminum-doped zinc oxide (AZO) thin films deposited on glass as well as on polyethylene terephthalate (PET) flexible substrates by using an atomic layer deposition (ALD) technique. AZO thin films possess high optical transmittance at visible and near-infrared spectral range and electrical properties competitive to commercial ITO layers. AZO layers deposited on flexible PET substrates demonstrate stable sheet resistance over 1000 bending cycles. Based on the performed optical and electrical characterizations, several applications of ALD AZO as transparent conductive layers are shown—AZO/glass-supported liquid crystal (LC) display and AZO/PET-based flexible polymer-dispersed liquid crystal (PDLC) devices.

scholarly journals Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Complexity ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
Joel Molina-Reyes ◽  
Luis Hernandez-Martinez
Keyword(s):  
Resistive Switching ◽  
Atomic Layer ◽  
Memory Device ◽  
Switching Behavior ◽  
Processing Temperature ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Insulator Metal ◽  
Switching Characteristics

We present the resistive switching characteristics of Metal-Insulator-Metal (MIM) devices based on amorphous Al2O3 which is deposited by Atomic Layer Deposition (ALD). A maximum processing temperature for this memory device is 300°C, making it ideal for Back-End-of-Line (BEOL) processing. Although some variations in the forming, set, and reset voltages (VFORM, VSET, and VRESET) are obtained for many of the measured MIM devices (mainly due to roughness variations of the MIM interfaces as observed after atomic-force microscopy analysis), the memristor effect has been obtained after cyclic I-V measurements. These resistive transitions in the metal oxide occur for both bipolar and unipolar conditions, while the IOFF/ION ratio is around 4–6 orders of magnitude and is formed at gate voltages of Vg<4 V. In unipolar mode, a gradual reduction in VSET is observed and is related to combined (a) incomplete dissolution of conductive filaments (made of oxygen vacancies and metal ions) which leaves some residuals and (b) thickening of chemically reduced Al2O3 during localized Joule heating. This is important because, by analyzing the macroscopic resistive switching behavior of this MIM structure, we could indirectly relate it to microscopic and/or nanoscopic phenomena responsible for the physical mechanism upon which most of these devices operate.

scholarly journals Fabrication of flexible polymer–GaN core–shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition

2015 ◽  
Vol 3 (20) ◽  
pp. 5199-5206 ◽  
Author(s):  
Cagla Ozgit-Akgun ◽  
Fatma Kayaci ◽  
Sesha Vempati ◽  
Ali Haider ◽  
Asli Celebioglu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hollow Cathode ◽  
Atomic Layer ◽  
Core Shell ◽  
Cathode Plasma ◽  
Flexible Polymer ◽  
Layer Deposition ◽  
Ceramic Nanofibers

Flexible polymer–GaN nanofibers were fabricated at a temperature much lower than that needed for the preparation of GaN ceramic nanofibers.

scholarly journals PEALD grown high-k ZrO-=SUB=-2-=/SUB=- thin films on SiC group IV compound semiconductor

2017 ◽  
Vol 51 (1) ◽  
pp. 133
Author(s):  
Anil G. Khairnar ◽  
Vilas S. Patil ◽  
K.S. Agrawal ◽  
Prerna A. Pandit ◽  
Rahul S. Salunke ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
High Mobility ◽  
Atomic Layer ◽  
Compound Semiconductor ◽  
Group Iv ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
High K

The study of ZrO2 thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO2 thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO2 thin films were post deposited annealed in rapid thermal annealing chamber at temperature of 400oC. The atomic force microscopy and x-ray photoelectron spectroscopy has been carried out to study the surface topography and roughness and chemical composition of thin film respectively. DOI: 10.21883/FTP.2017.01.8125

Microstructural evolution of ZrO2–HfO2 nanolaminate structures grown by atomic layer deposition

2004 ◽  
Vol 19 (2) ◽  
pp. 643-650 ◽  
Author(s):  
Hyoungsub Kim ◽  
Paul C. McIntyre ◽  
Krishna C. Saraswat
Keyword(s):  
Surface Roughness ◽  
Atomic Layer Deposition ◽  
Microstructural Evolution ◽  
Single Layer ◽  
Atomic Layer ◽  
Individual Layer ◽  
Force Microscopy ◽  
Layer Sequence ◽  
Transmission Electron ◽  
Layer Deposition

Zirconia–hafnia (ZrO2–HfO2) nanolaminate structures were grown using the atomic layer deposition (ALD) technique with different stacking sequences and layer thickness layer thicknesses. The microstructural evolution and surface roughness were compared with those of single-layer ZrO2 or HfO2 films using transmission electron microscopy and atomic force microscopy. Thin single-layer ALD-ZrO2 films were polycrystalline and composed of the tetragonal ZrO2 phase as-deposited, whereas thicker (>14 nm) films were composed mainly of the monoclinic phase. HfO2 films were amorphous as-deposited and crystallized into primarily monoclinic during subsequent anneals at temperatures over 500 °C. All the nanolaminate structures having individual layer thicknesses greater than approximately 2 nm were crystalline (mixture of tetragonal and monoclinic phases) independent of layer sequence and also exhibited a layer-to-layer epitaxy relationship within each grain. However, the identity of the starting layer determined the final grain size and surface roughness of the nanolaminates. A qualitative model for the observed microstructure evolution of the laminate films is proposed.

scholarly journals Characterization of oxide barrier layers prepared by atomic layer deposition

2017 ◽  
Vol 9 (7) ◽  
pp. 168781401771180 ◽  
Author(s):  
Fa-Ta Tsai ◽  
Ching-Kong Chao ◽  
Kai-Jyun Jhong ◽  
Rwei-Ching Chang
Keyword(s):  
Water Vapor ◽  
Atomic Layer Deposition ◽  
Layer Structure ◽  
Transmission Rate ◽  
Single Layer ◽  
Atomic Layer ◽  
Optical Transmittance ◽  
Double Layer Structure ◽  
Layer Deposition ◽  
Water Vapor Transmission

Atomic layer deposition has become an important thin-film growth technique for producing gas diffusion barriers because of its low process temperature and its ability to produce uniform films. In this work, atomic layer deposition was used to deposit various Al2O3 and ZnO thin films on polyethylene terephthalate substrates; subsequently, the physical properties and water vapor transmission rates of the films were characterized. Single and hybrid films (Al2O3, ZnO, Al2O3/ZnO, and ZnO/Al2O3) with thicknesses of 25, 50, and 100 nm at a deposition temperature of 60°C were investigated. The deposited films were characterized for surface roughness, optical transmittance, adhesion, water vapor transmission rate, and contact angle. The results showed that the double-layer structure provided a higher water vapor transmission rate and higher adhesion strength than those of the single-layer structure although both the surface roughness and optical transmittance of the single-layer structure were slightly better than those of the double-layer structure. The results revealed that the atomic layer deposition-grown hybrids could act as water vapor barriers.

scholarly journals Исследование ультратонких сверхпроводящих пленок нитрида ниобия, полученных методом атомно-слоевого осаждения

2021 ◽  
Vol 91 (4) ◽  
pp. 672
Author(s):  
М.В. Шибалов ◽  
Н.В. Порохов ◽  
А.М. Мумляков ◽  
И.В. Трофимов ◽  
Г.Д. Дюдьбин ◽  
...  
Keyword(s):  
Transition Temperature ◽  
Sheet Resistance ◽  
Field Effect Transistors ◽  
Atomic Layer ◽  
Organic Precursor ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer Deposition ◽  
Metal Organic ◽  
Ar Gas

This publication presents a method for deposition of ultrathin superconducting NbNx films by atomic layer deposition enhanced by plasma with metal-organic precursor and a gas mixture of H2/Ar used as reactant. The obtained films characterized by measuring of sheet resistance, ellipsometry, atomic force microscopy, and superconducting characteristics measurements. The optimal parameters of the H2/Ar gas ratio was defined at which sheet resistance of NbNx films was minimal. A comparative analysis of sheet resistance of the obtained NbNx films performed. The dependence of the transition temperature to the superconducting state on the film thickness investigated. The transition temperature of 13.7 K and the critical current density of 0.7 MA/cm2 achieved. High film uniformity, precision control of the thickness and deposition temperature of 350°C makes it possible to use these films in the manufacture of field effect transistors and in functional devices for various purposes, working on the superconductivity effect.

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