Comprehensive Thermal Analysis of Diamond in a High-Power Raman Cavity Based on FVM-FEM Coupled Method

Despite their extremely high thermal conductivity and low thermal expansion coefficients, thermal effects in diamond are still observed in high-power diamond Raman lasers, which proposes a challenge to their power scaling. Here, the dynamics of temperature gradient and stress distribution in the diamond are numerically simulated under different pump conditions. With a pump radius of 100 μm and an absorption power of up to 200 W (corresponding to the output power in kilowatt level), the establishment period of thermal steady-state in a millimeter diamond is only 50 μs, with the overall thermal-induced deformation of the diamond being less than 2.5 μm. The relationship between the deformation of diamond and the stability of the Raman cavity is also studied. These results provide a method to better optimize the diamond Raman laser performance at output powers up to kilowatt-level.

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Thermal expansion

Properties of Materials ◽

10.1093/oso/9780198520757.003.0013 ◽

2004 ◽

Author(s):

Robert E. Newnham

Keyword(s):

Thermal Expansion ◽

Thermal Expansion Coefficients ◽

Expansion Coefficients ◽

The Relationship

When a material is heated uniformly it undergoes a strain described by the Relationship . . . xij = αijΔT, . . . where αij are the thermal expansion coefficients and

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Thermal Expansion of SrZr4-xTix(PO4)6 Ceramics

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.281.169 ◽

2018 ◽

Vol 281 ◽

pp. 169-174

Author(s):

Yang Wang ◽

Yuan Yuan Song ◽

Yuan Yuan Zhou ◽

Lu Ping Yang ◽

Fu Tian Liu

Keyword(s):

Thermal Expansion ◽

Relative Density ◽

Thermophysical Properties ◽

Sintering Temperature ◽

Temperature Range ◽

Thermal Expansion Coefficients ◽

High Relative Density ◽

Low Thermal Expansion ◽

Expansion Coefficients

Low thermal expansion ceramics have been widely applied in multiple fields. In this paper, a series of low thermal expansion ceramics SrZr4-xTix(PO4)6 was prepared and characterized. The SrZr4-xTix(PO4)6 ceramics could be well sintered in the temperature range of 1400~1500 °C. The effect of the addition of Ti substituting Zr and the sintering temperature was studied. The Ceramic with x =0.1 sintered at 1450 °C, the SrZr4-xTix(PO4)6 had a high relative density. The thermal expansion coefficients were about 3.301×10-6 °C-1. It was demonstrated that the microstructure of the SrZr4-xTix(PO4)6 could be altered by adding varying amount of Ti to tailor the thermophysical properties of the material.

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Some recent developments in high-strength glasses and ceramics

Proceedings of the Royal Society of London Series A - Mathematical and Physical Sciences ◽

10.1098/rspa.1964.0212 ◽

1964 ◽

Vol 282 (1388) ◽

pp. 52-56

Keyword(s):

Thermal Expansion ◽

Bending Strength ◽

Glass Ceramics ◽

High Strength ◽

Fine Grained ◽

Thermal Expansion Coefficients ◽

Low Thermal Expansion ◽

Recent Developments ◽

Expansion Coefficients ◽

Mechanical Strengths

Two areas of development in the field of glasses and ceramics have produced new materials with unusual combinations of properties. Glass-ceramics are melted and formed as glasses by conventional glass-forming techniques, but by a subsequent heat treatment, they are converted to fine-grained crystalline structures with new and useful combinations of properties. Products with thermal expansion coefficients approaching zero and flexural strengths ranging from 10 000 to 50 000 Lb./in. 2 have been made though not all combinations of low thermal expansion coefficients and high mechanical strengths are possible. The second area of development is in so-called Chemcor glasses. Such glass products can be preferentially pre-stressed by chemical means so as to produce an outer layer with high compressive stress and a bending strength in the finished product up to 100 000 Lb/in. 2 .

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High-performance SrNb0.1Co0.9−xFexO3−δperovskite cathodes for low-temperature solid oxide fuel cells

Journal of Materials Chemistry A ◽

10.1039/c4ta03208j ◽

2014 ◽

Vol 2 (37) ◽

pp. 15454-15462 ◽

Cited By ~ 45

Author(s):

Yinlong Zhu ◽

Jaka Sunarso ◽

Wei Zhou ◽

Shanshan Jiang ◽

Zongping Shao

Keyword(s):

Solid Oxide Fuel Cells ◽

Peak Power ◽

High Performance ◽

Reduction Reaction ◽

Solid Oxide ◽

Oxide Fuel ◽

Thermal Expansion Coefficients ◽

Low Thermal Expansion ◽

Orr Activity ◽

Expansion Coefficients

A novel family of perovskites, SrNb0.1Co0.9−xFexO3−δ(SNCF, 0.1 ≤x≤ 0.5), shows not only high oxygen reduction reaction (ORR) activity at operating temperatures below 600 °C (e.g.peak power density of 1587 mW cm−2at 600 °C) but also low thermal expansion coefficients (TECs) and improved CO2resistivity.

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Studies of Microdefects, Thermal Expansion and Magnetic Properties of Fe-Ni-Co Invar Alloys

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.373.146 ◽

2017 ◽

Vol 373 ◽

pp. 146-149

Author(s):

Wen Deng ◽

Li Xia Li ◽

Shou Lei Xu ◽

Wen Chun Zhang ◽

Yu Yang Huang ◽

...

Keyword(s):

Thermal Expansion ◽

Large Change ◽

X Ray Diffraction ◽

X Ray ◽

Thermal Expansion Coefficients ◽

Invar Alloys ◽

Low Thermal Expansion ◽

Expansion Coefficients ◽

Fcc Phase ◽

Bcc Phase

The microdefects, the thermal expansion coefficients and the magnetization -temperature curves of the Fe64Ni36-xCox (x=1~10) were characterized by means of positron lifetime, X-ray diffraction, Michelson's interferometer and VSM modular on PPMS, respectively. The Fe64Ni30Co6 alloy is a mixture of BCC and FCC structures. With the Co content increasing in Fe64Ni36-xCox alloys, the BCC phase increases, while the FCC phase decreases. In comparison with other Fe64Ni36-xCox alloys, the Fe64Ni31Co5 alloy has a rather high magnetization at temperature lower than Tc, a relatively large change of the magnetization with the temperature near Tc, and a rather low thermal expansion coefficient.

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Nanoscale Chemical Mapping of Semiconductor Devices and Materials via PiFM

10.31399/asm.cp.istfa2018p0330 ◽

2018 ◽

Author(s):

Sung Park ◽

Derek Nowak ◽

Tom Albrecht

Keyword(s):

Thermal Expansion ◽

Self Assembly ◽

Chemical Mapping ◽

Force Microscopy ◽

Thermal Expansion Coefficients ◽

Low Thermal Expansion ◽

Semiconductor Compounds ◽

High Resolution Images ◽

Expansion Coefficients ◽

Microscopy Techniques

Abstract Nanoscale microscopy is an important technique in analyzing current semiconductor processes and devices. Many of the current microscopy techniques can render high resolution images of morphology and, in some cases, elemental information. However, techniques are still needed to give definitive nanoscale mapping of compound materials utilized in semiconductor processes such as Si3N4, SiO2, SiGe, and low-k materials. Photo-induced force microscopy (PiFM) combines IR spectroscopy with atomic force microscopy (AFM) to provide concurrent information on topography and chemical mapping. PiFM measures the attractive dipole-dipole photo-response between the tip and the sample and does not rely on repulsive force arising from absorption-based sample expansion. As such, PiFM works well with many of the inorganic semiconductor compounds (with low thermal expansion coefficients) as well as organic materials (with high thermal expansion coefficients) [1]. In this study, various examples of nanoscale chemical mapping of semiconductor samples (surfaces processed via directed self-assembly (DSA), strain in SiGe/SiO2 structure, photoresist, etc.) will be presented, all demonstrating ~ 10 nm spatial resolution

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Measurements of Thermal Properties of Gaskets for the Design of Bolted Flange Joints Under Thermal Conduction Conditions

Volume 2: Computer Technology ◽

10.1115/pvp2006-icpvt-11-93215 ◽

2006 ◽

Cited By ~ 3

Author(s):

Takahiro Ohmura ◽

Kanji Hanashima ◽

Junichi Nyumura ◽

Toshiyuki Sawa

Keyword(s):

Thermal Conductivity ◽

Thermal Expansion ◽

Thermal Properties ◽

Effective Thermal Conductivity ◽

Linear Thermal Expansion ◽

Absolute Temperature ◽

Thermal Expansion Coefficients ◽

Expansion Coefficients ◽

Bolted Flange ◽

The Relationship

In this study, the thermal properties of the gaskets, which were used for designing the bolted flange joints, such as effective thermal conductivity, specific heat, linear thermal expansion coefficient and so on were measured. Especially, the effective thermal conductivities were measured by using the heat flow method. The relationship between the gasket structure and the thickness was shown by using an equivalent thermal resistance, and an empirical equation of effective thermal conductivity, which was related to the bulk density and absolute temperature, was proposed by deriving the heat conduction in solid, radiation and gas. Also, in the measurement of the linear thermal expansion coefficients of the gaskets, the measured values were shown to change substantially below 150 °C, and to depend on the heating rate and the load applied on the gasket sample.

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Effect of SiO2 Cap Layer on Thermal Stability of Nickel and Nickel-Cobalt Silicide

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.321-323.1322 ◽

2006 ◽

Vol 321-323 ◽

pp. 1322-1325

Author(s):

Kil Jin Han ◽

Yu Jeong Cho ◽

Soon Young Oh ◽

Yong Jin Kim ◽

Won Jae Lee ◽

...

Keyword(s):

Thermal Stability ◽

Annealing Temperature ◽

Nickel Silicide ◽

Cobalt Silicide ◽

Thermal Expansion Coefficients ◽

Nickel Cobalt ◽

Expansion Coefficients ◽

The Difference ◽

The Stability ◽

Thermal Stability Of

We investigated the effect of SiOcap layer on the thermal stability of nickel and nickel-cobalt silicide by measuring its sheet resistance. The stability of nickel silicide was deteriorated as a function of annealing temperature, while that of nickel-cobalt silicide was not. In case of both silicides, the SiOcap layer improved the stability. Tensile stress from the difference of thermal expansion coefficients between SiO2 and nickel silicide may suppress the agglomeration of nickel silicide.

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