scholarly journals Extensive Broadband Near-Infrared Emissions from GexSi1−x Alloys on Micro-Hole Patterned Si(001) Substrates

Nanomaterials ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 2545
Author(s):  
Kun Peng ◽  
Ningning Zhang ◽  
Jiarui Zhang ◽  
Peizong Chen ◽  
Jia Yan ◽  
...  
Keyword(s):  
Near Infrared ◽  
Reference Sample ◽  
Optoelectronic Devices ◽  
Night Vision ◽  
Patterned Substrate ◽  
Si Substrates ◽  
Flat Substrate ◽  
Micro Holes ◽  
Micro Hole ◽  
Pl Spectrum

Broadband near-infrared (NIR) luminescent materials have been continuously pursued as promising candidates for optoelectronic devices crucial for wide applications in night vision, environment monitoring, biological imaging, etc. Here, graded GexSi1−x (x = 0.1–0.3) alloys are grown on micro-hole patterned Si(001) substrates. Barn-like islands and branch-like nanostructures appear at regions in-between micro-holes and the sidewalls of micro-holes, respectively. The former is driven by the efficient strain relation. The latter is induced by the dislocations originating from defects at sidewalls after etching. An extensive broadband photoluminescence (PL) spectrum is observed in the NIR wavelength range of 1200–2200 nm. Moreover, the integrated intensity of the PL can be enhanced by over six times in comparison with that from the reference sample on a flat substrate. Such an extensively broad and strong PL spectrum is attributed to the coupling between the emissions of GeSi alloys and the guided resonant modes in ordered micro-holes and the strain-enhanced decomposition of alloys during growth on the micro-hole patterned substrate. These results demonstrate that the graded GexSi1−x alloys on micro-hole pattered Si substrates may have great potential for the development of innovative broadband NIR optoelectronic devices, particularly to realize entire systems on a Si chip.

Broadband near-infrared emission of K3ScF6:Cr3+ phosphors for night vision imaging system sources

2021 ◽  
Vol 417 ◽  
pp. 129271
Author(s):  
Haojun Yu ◽  
Jian Chen ◽  
Ruiyu Mi ◽  
Juyu Yang ◽  
Yan-gai Liu
Keyword(s):  
Near Infrared ◽  
Imaging System ◽  
Infrared Emission ◽  
Night Vision ◽  
Near Infrared Emission

Improvement of thread turning process using micro-hole textured solid-lubricant embedded tools

2021 ◽  
pp. 095440542110199
Author(s):  
Salman Khani ◽  
Seyedhamidreza Shahabi Haghighi ◽  
Mohammad Reza Razfar ◽  
Masoud Farahnakian
Keyword(s):  
Surface Roughness ◽  
Mechanical Strength ◽  
Solid Lubricant ◽  
Operating Cost ◽  
Contact Length ◽  
Solid Lubrication ◽  
Turning Process ◽  
Micro Holes ◽  
Micro Hole ◽  
Cutting Inserts

In this paper, the thread turning of aluminum 7075-T6 alloy is studied using micro-hole textured solid-lubricant embedded carbide inserts. The primary focus of this work is to enhance the performance of the thread turning process for producing high quality threaded parts. To achieve this, micro-holes were generated by laser micro-machining on the rake face of tools and then, MoS2 and CNT (carbon nanotube) solid-lubricants were embedded into micro-holes. The effects of micro-holes and solid-lubrication on the performance of the thread turning process were examined using traditional tool ( T0), micro-hole textured tool ( T1), micro-hole textured MoS2 embedded tool ( T2), and micro-hole textured CNT embedded tool ( T3). In this study, cutting forces, chip-tool contact length, built-up edge (BUE), surface roughness, and operating cost were investigated. The influence of micro-hole generation on the mechanical strength of cutting inserts was evaluated using the finite element method. The results showed that the fabrication of the micro-holes on the rake surface of cutting inserts has no significant effect on the mechanical strength of the tools. The comparisons of our method with traditional tools demonstrated that the cutting performance improved in the threading process. Our results reveal that the main cutting force, radial thrust force, surface roughness, built-up edge, and chip-tool contact length reduced 37.1%, 40.9%, 37.9%, 58.3%, and 38.2%, respectively, as T3 tools are applied in this process. A cost analysis, based on estimated tooling costs, showed that the T3 tool can yield an 18% reduction in overall operating cost.

Ab Initio Two-sites Occupancy and Broadband Near-Infrared Emission of Cr3+ in Li2MgZrO4

2021 ◽  
Author(s):  
Xue Zhou ◽  
Jinmeng Xiang ◽  
Jiming Zheng ◽  
Xiaoqi Zhao ◽  
Hao Suo ◽  
...  
Keyword(s):  
Plant Growth ◽  
Ab Initio ◽  
Light Source ◽  
Near Infrared ◽  
Broad Band ◽  
Infrared Emission ◽  
Night Vision ◽  
Light Emitting ◽  
Non Destructive ◽  
Near Infrared Emission

Near-infrared (NIR) phosphor-converted light-emitting diodes (pc-LEDs) light source have great potential in non-destructive detection, promoting plant growth and night vision applications, while the discovery of a broad-band NIR phosphor still...

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

scholarly journals High performing flexible optoelectronic devices using thin films of topological insulator

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Nonlinear Optical Properties ◽  
Metallic Surface ◽  
Strong Light ◽  
High Performing ◽  
Decay Times

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Enhancing and Tuning broadband near-infrared (NIR) photoluminescence properties in Cr3+-doped Ca2YHf2Al3O12 garnet phosphors via Ce3+/Yb3+-codoping for LED applications

2021 ◽  
Author(s):  
Qianqian Zhang ◽  
Guogang Li ◽  
Peipei Dang ◽  
Dongjie Liu ◽  
Dayu Huang ◽  
...  
Keyword(s):  
Near Infrared ◽  
Light Emitting Diode ◽  
Food Composition ◽  
Night Vision ◽  
Photoluminescence Properties ◽  
Light Emitting ◽  
Measurement Area

Near-infrared emitting phosphor-converted light-emitting diode (NIR pc-LED) attracts much attention as the promising applications in night vision, biosensor, food composition and freshness measurement area and so on, while the discovery...

scholarly journals Synthesis of Ge1−xSnx Alloy Thin Films by Rapid Thermal Annealing of Sputtered Ge/Sn/Ge Layers on Si Substrates

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2248 ◽  
Author(s):  
Hadi Mahmodi ◽  
Md Hashim ◽  
Tetsuo Soga ◽  
Salman Alrokayan ◽  
Haseeb Khan ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Near Infrared ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Infrared Region ◽  
Alloy Formation ◽  
Phase Mixing ◽  
Si Substrates ◽  
Msm Photodetector

In this work, nanocrystalline Ge1−xSnx alloy formation from a rapid thermal annealed Ge/Sn/Ge multilayer has been presented. The multilayer was magnetron sputtered onto the Silicon substrate. This was followed by annealing the layers by rapid thermal annealing, at temperatures of 300 °C, 350 °C, 400 °C, and 450 °C, for 10 s. Then, the effect of thermal annealing on the morphological, structural, and optical characteristics of the synthesized Ge1−xSnx alloys were investigated. The nanocrystalline Ge1−xSnx formation was revealed by high-resolution X-ray diffraction (HR-XRD) measurements, which showed the orientation of (111). Raman results showed that phonon intensities of the Ge-Ge vibrations were improved with an increase in the annealing temperature. The results evidently showed that raising the annealing temperature led to improvements in the crystalline quality of the layers. It was demonstrated that Ge-Sn solid-phase mixing had occurred at a low temperature of 400 °C, which led to the creation of a Ge1−xSnx alloy. In addition, spectral photo-responsivity of a fabricated Ge1−xSnx metal-semiconductor-metal (MSM) photodetector exhibited its extending wavelength into the near-infrared region (820 nm).

scholarly journals InN Quantum Dots by Metalorganic Chemical Vapor Deposition for Optoelectronic Applications

2021 ◽  
Vol 8 ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Recent Work ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Size Control ◽  
Chemical Vapor ◽  
Metalorganic Chemical

This review will cover recent work on InN quantum dots (QDs), specifically focusing on advances in metalorganic chemical vapor deposition (MOCVD) of metal-polar InN QDs for applications in optoelectronic devices. The ability to use InN in optoelectronic devices would expand the nitrides system from current visible and ultraviolet devices into the near infrared. Although there was a significant surge in InN research after the discovery that its bandgap provided potential infrared communication band emission, those studies failed to produce an electroluminescent InN device in part due to difficulties in achieving p-type InN films. Devices utilizing InN QDs, on the other hand, were hampered by the inability to cap the InN without causing intermixing with the capping material. The recent work on InN QDs has proven that it is possible to use capping methods to bury the QDs without significantly affecting their composition or photoluminescence. Herein, we will discuss the current state of metal-polar InN QD growth by MOCVD, focusing on density and size control, composition, relaxation, capping, and photoluminescence. The outstanding challenges which remain to be solved in order to achieve InN infrared devices will be discussed.

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