A Radionuclide Generator of High-Purity Bi-213 for Instant Labeling

A new two-column 225Ac/213Bi generator was developed specifically for using 225Ac containing an impurity of long lived 227Ac. The parent 225Ac was retained on the first Actinide Resin column, while 213Bi was accumulated on the second column filled with AG MP-50 resin via continuous elution and decay of intermediate 221Fr. The 213Bi accumulation was realized in circulation mode which allowed a compact generator design. It was demonstrated that 213Bi could be quickly and effectively extracted from AG MP-50 in form of complexes with various chelating agents including DTPA and DOTA. The performance of the generator presented and a conventional single-column generator on the base of AG MP-50 was tested and both generators were loaded with 225Ac containing 227Ac impurity. The 213Bi generation efficiencies were comparable and greater than 70%, whereas the developed generator provided a deeper degree of purification of 213Bi from Ac isotopes and decay products of 227Ac.

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High purity separation of hypericin from Hypericum perforatum L. extract with macroporous resin column coupling preparative liquid chromatography

Process Biochemistry ◽

10.1016/j.procbio.2021.02.012 ◽

2021 ◽

Author(s):

Jie Zhang ◽

Chunrong Feng ◽

Pu Ge ◽

Qingqing Wang ◽

Yanling Liu ◽

...

Keyword(s):

Liquid Chromatography ◽

High Purity ◽

Hypericum Perforatum ◽

Macroporous Resin ◽

Resin Column ◽

Preparative Liquid Chromatography ◽

Hypericum Perforatum L ◽

Column Coupling

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Conditions Contributing to the Stability of Factor VIII Coagulant Activity

10.1055/s-0039-1682497 ◽

1977 ◽

Author(s):

T. Exner ◽

K.A. Rickard ◽

H. Kronenberg

Keyword(s):

Factor Viii ◽

High Purity ◽

Gel Filtration ◽

Anion Exchange Chromatography ◽

Exchange Chromatography ◽

Buffer System ◽

Factor Viii Activity ◽

Coagulant Activity ◽

The Stability ◽

Degree Of Purification

Factor VTII tends to become less stable the greater its degree of purification. The loss of factor VIII during preparation of high activity concentrates makes such processes uneconomical. Conditions contributing to the stability of factor VIII were investigated.High purity factor VIII was incubated with plasma components fractionated by gel filtration and by anion exchange chromatography. Factor VIII activity was assessed initially and after several hours incubation. Several fractions destroying factor VIII activity were clearly resolved. Fractions stabilizing factor VIII were associated only with albumin.Various buffer systems were investigated similarly. A non-chelating buffer system containing albumin was found to give optimal factor VIII stability.

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A new method for the separation of LREEs in geological materials using a single TODGA resin column and its application to the determination of Nd isotope compositions by MC-ICPMS

Analytical Methods ◽

10.1039/c7ay00966f ◽

2017 ◽

Vol 9 (23) ◽

pp. 3531-3540 ◽

Cited By ~ 10

Author(s):

Yuqiong Wang ◽

Xiaoxiao Huang ◽

Yali Sun ◽

Shouqian Zhao ◽

Yahui Yue

Keyword(s):

Isotope Ratios ◽

Precise Determination ◽

New Method ◽

Geological Samples ◽

Resin Column ◽

Nd Isotope ◽

Geological Materials ◽

Single Column

A new method was developed for the purification of Nd in geological samples using a single column containing TODGA extraction resin and the precise determination of Nd isotope ratios by MC-ICPMS.

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Observations oh Nucleation and Growth of Voids in Nickel

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069065 ◽

1970 ◽

Vol 28 ◽

pp. 414-415

Author(s):

J. L. Brimhall ◽

H. E. Kissinger ◽

B. Mastel

Keyword(s):

High Purity ◽

Growth Stage ◽

Elevated Temperatures ◽

Early Growth ◽

Nucleation And Growth ◽

Pure Nickel ◽

Different Temperatures ◽

Total Fluence ◽

Neutron Exposure ◽

Growth Of Voids

Some information on the size and density of voids that develop in several high purity metals and alloys during irradiation with neutrons at elevated temperatures has been reported as a function of irradiation parameters. An area of particular interest is the nucleation and early growth stage of voids. It is the purpose of this paper to describe the microstructure in high purity nickel after irradiation to a very low but constant neutron exposure at three different temperatures.Annealed specimens of 99-997% pure nickel in the form of foils 75μ thick were irradiated in a capsule to a total fluence of 2.2 × 1019 n/cm2 (E > 1.0 MeV). The capsule consisted of three temperature zones maintained by heaters and monitored by thermocouples at 350, 400, and 450°C, respectively. The temperature was automatically dropped to 60°C while the reactor was down.

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Preparation and characterisation of vanadium pentoxide supported rhodium catalyst

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s042482010010679x ◽

1988 ◽

Vol 46 ◽

pp. 946-947

Author(s):

A. Legrouri

Keyword(s):

Aqueous Solution ◽

Thermal Decomposition ◽

Physicochemical Properties ◽

Surface Area ◽

Vanadium Pentoxide ◽

High Purity ◽

Gas Adsorption ◽

Rhodium Catalyst ◽

Optical Methods ◽

Reducible Oxides

The industrial importance of metal catalysts supported on reducible oxides has stimulated considerable interest during the last few years. This presentation reports on the study of the physicochemical properties of metallic rhodium supported on vanadium pentoxide (Rh/V2O5). Electron optical methods, in conjunction with other techniques, were used to characterise the catalyst before its use in the hydrogenolysis of butane; a reaction for which Rh metal is known to be among the most active catalysts.V2O5 powder was prepared by thermal decomposition of high purity ammonium metavanadate in air at 400 °C for 2 hours. Previous studies of the microstructure of this compound, by HREM, SEM and gas adsorption, showed it to be non— porous with a very low surface area of 6m2/g3. The metal loading of the catalyst used was lwt%Rh on V2Q5. It was prepared by wet impregnating the support with an aqueous solution of RhCI3.3H2O.

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High-purity Ge x-ray detectors: Sensitivity factors and usefulness

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100136350 ◽

1990 ◽

Vol 48 (2) ◽

pp. 548-548

Author(s):

E. B. Steel

Keyword(s):

High Purity ◽

High Energy ◽

Quantitative Chemical Analysis ◽

Detector Performance ◽

X Ray ◽

Detector Sensitivity ◽

Specimen Holder ◽

Many Instruments ◽

Charge Resolution ◽

Sensitivity Factors

High Purity Germanium (HPGe) x-ray detectors are now commercially available for the analytical electron microscope (AEM). The detectors have superior efficiency at high x-ray energies and superior resolution compared to traditional lithium-drifted silicon [Si(Li)] detectors. However, just as for the Si(Li), the use of the HPGe detectors requires the determination of sensitivity factors for the quantitative chemical analysis of specimens in the AEM. Detector performance, including incomplete charge, resolution, and durability has been compared to a first generation detector. Sensitivity factors for many elements with atomic numbers 10 through 92 have been determined at 100, 200, and 300 keV. This data is compared to Si(Li) detector sensitivity factors.The overall sensitivity and utility of high energy K-lines are reviewed and discussed. Many instruments have one or more high energy K-line backgrounds that will affect specific analytes. One detector-instrument-specimen holder combination had a consistent Pb K-line background while another had a W K-line background.

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TEM characterization of WSix films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171973 ◽

1994 ◽

Vol 52 ◽

pp. 848-849

Author(s):

V. C. Kannan ◽

S. M. Merchant ◽

R. B. Irwin ◽

A. K. Nanda ◽

M. Sundahl ◽

...

Keyword(s):

Integrated Circuits ◽

Vapor Deposition ◽

High Purity ◽

Physical Vapor Deposition ◽

Thermal Treatments ◽

Rapid Thermal Anneal ◽

Tungsten Silicide ◽

Tem Characterization ◽

Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

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