Resonant MEMS Pressure Sensor in 180 nm CMOS Technology Obtained by BEOL Isotropic Etching

This work presents the design and characterization of a resonant CMOS-MEMS pressure sensor manufactured in a standard 180 nm CMOS industry-compatible technology. The device consists of aluminum square plates attached together by means of tungsten vias integrated into the back end of line (BEOL) of the CMOS process. Three prototypes were designed and the structural characteristics were varied, particularly mass and thickness, which are directly related to the resonance frequency, quality factor, and pressure; while the same geometry at the frontal level, as well as the air gap, were maintained to allow structural comparative analysis of the structures. The devices were released through an isotropic wet etching step performed in-house after the CMOS die manufacturing, and characterized in terms of Q-factor vs. pressure, resonant frequency, and drift vs. temperature and biasing voltage.

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CMOS-MEMS Based Current Mirror MOSFET Embedded Pressure Sensor for Healthcare and Biomedical Applications

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.647.315 ◽

2013 ◽

Vol 647 ◽

pp. 315-320 ◽

Cited By ~ 6

Author(s):

Pradeep Kumar Rathore ◽

Brishbhan Singh Panwar

Keyword(s):

Pressure Sensor ◽

Biomedical Applications ◽

Circuit Simulation ◽

Applied Pressure ◽

Pressure Sensors ◽

Cmos Technology ◽

Current Mirror ◽

Sensing Element ◽

Pressure Sensing ◽

Cmos Mems

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.

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The Fabrics Design Influence in Real and Simulated Drape of Clothing

KnE Engineering ◽

10.18502/keg.v5i6.7060 ◽

2020 ◽

Author(s):

Rui Miguel ◽

José Lucas ◽

Sónia Melo ◽

Madalena Pereira ◽

Clara Fernandes ◽

...

Keyword(s):

Mechanical Properties ◽

Comparative Analysis ◽

Experimental Work ◽

Structural Characteristics ◽

Research Work ◽

Wear Performance ◽

The Real ◽

Fashion Products ◽

Technology And Design

This research work aims to study the influence of the fabrics in the wear performance of clothing. For this, an experimental work was developed with two fabric samples having the same weight/m2, one single and another double, and a jacket prototype. Through a comparative analysis of the mechanical properties, very interesting results was obtained in the evaluation and characterization of the two fabrics performance in designing the same jacket, namely the drape and the corresponded aesthetic fabrics behaviours during wear. The structural characteristics and mechanical properties of each fabric were introduced into Marvelous Designer Version 8 software to simulate the virtual draping of fabrics in a skirt. The analysis of the drape profile of each fabric given by the software and the drape of the real fabrics evaluated in laboratory indicates, coherently, that the double fabric falls less than the single, but in a more harmonious way, what evidence the close links between technology and design of fashion products. Keywords: Fabrics design, Fabrics mechanical properties, Clothing drape, Real and simulated drape

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Manufacture and Characterization of High Q-Factor Inductors Based on CMOS-MEMS Techniques

Sensors ◽

10.3390/s111009798 ◽

2011 ◽

Vol 11 (10) ◽

pp. 9798-9806 ◽

Cited By ~ 4

Author(s):

Ming-Zhi Yang ◽

Ching-Liang Dai ◽

Jin-Yu Hong

Keyword(s):

Q Factor ◽

High Q ◽

Cmos Mems

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Design and Characterization of a CMOS MEMS Capacitive Squeeze-Film Pressure Sensor

2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems (MEMS) ◽

10.1109/memsys.2019.8870901 ◽

2019 ◽

Cited By ~ 2

Author(s):

Jason Chiu ◽

Michael S.-C. Lu

Keyword(s):

Pressure Sensor ◽

Squeeze Film ◽

Film Pressure ◽

Cmos Mems

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Piezoresistance characterization of commercial CMOS gate polysilicon and its application in biomass microsensors

Canadian Journal of Physics ◽

10.1139/p96-850 ◽

1996 ◽

Vol 74 (S1) ◽

pp. 151-155

Author(s):

J. M. Chen ◽

M. Parameswaran ◽

M. Paranjape

Keyword(s):

Cmos Technology ◽

Gauge Factor ◽

Cmos Process ◽

Mass Sensor ◽

Strain Sensing ◽

Sensing Element ◽

Liquid Environment ◽

Sensing Material ◽

Low Levels

This paper presents experimental results on the piezoresistance characterization of gate polysilicon available from two commercial CMOS processes. It is shown that the gate polysilicon is very strain-sensitive, and a gauge factor of about 25 can be readily achieved. This value can allow standard gate polysilicon to be used as a strain-sensing element for integrated microsensor applications. As an example, a sub-nanogram mass sensor was fabricated using commercially available CMOS technology and is presented. The device incorporates gate polysilicon of the CMOS process as the sensing material, and is subjected to low levels of strain in order to measure small masses (< 10−9 g). A potential application for this sensor is to monitor the growth of biological cell cultures in a liquid environment.

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Electroacoustic Analysis of a Controlled Damping Planar CMOS-MEMS Electrodynamic Microphone

Archives of Acoustics ◽

10.1515/aoa-2015-0052 ◽

2015 ◽

Vol 40 (4) ◽

pp. 527-537 ◽

Cited By ~ 5

Author(s):

Farès Tounsi ◽

Brahim Mezghani ◽

Libor Rufer ◽

Mohamed Masmoudi

Keyword(s):

Cmos Technology ◽

The Other ◽

Vertical Position ◽

Cmos Process ◽

Pressure Sensitivity ◽

Satisfactory Performance ◽

Mems Microphone ◽

Cmos Mems ◽

Mechanical Sensor ◽

New Generation

Abstract This paper gives a detailed electroacoustic study of a new generation of monolithic CMOS micromachined electrodynamic microphone, made with standard CMOS technology. The monolithic integration of the mechanical sensor with the electronics using a standard CMOS process is respected in the design, which presents the advantage of being inexpensive while having satisfactory performance. The MEMS microphone structure consists mainly of two planar inductors which occupy separate regions on substrate. One inductor is fixed; the other can exercise out-off plane movement. Firstly, we detail the process flow, which is used to fabricate our monolithic microphone. Subsequently, using the analogy between the three different physical domains, a detailed electro-mechanical-acoustic analogical analysis has been performed in order to model both frequency response and sensitivity of the microphone. Finally, we show that the theoretical microphone sensitivity is maximal for a constant vertical position of the diaphragm relative to the substrate, which means the distance between the outer and the inner inductor. The pressure sensitivity, which is found to be of the order of a few tens of μV/Pa, is flat within a bandwidth from 50 Hz to 5 kHz.

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Performance Optimization of Pressure Sensor Based on Suspended Gate MOSFET

Advanced Engineering Forum ◽

10.4028/www.scientific.net/aef.30.43 ◽

2018 ◽

Vol 30 ◽

pp. 43-53

Author(s):

Kemouche Salah ◽

Kerrour Fouad

Keyword(s):

Pressure Sensor ◽

Performance Optimization ◽

Cmos Technology ◽

Comsol Multiphysics ◽

Output Current ◽

Simulation And Optimization ◽

Sensor Performance ◽

Modeling Simulation ◽

Cmos Mems ◽

The Mathematical Model

This paper examines the modeling, simulation and optimization of CMOS–MEMS integrated pressure sensor based on suspended gate MOSFET. The pressure Sensor consists of a square poly silicone suspended membrane, which is the movable gate of the NMOS. This NMOS is designed using 2 μm CMOS technology. The mathematical model describing the complete behaviour of the PSFET pressure sensor has been described. Finite element method (FEA) based COMSOL Multiphysics is utilized for the simulation of pressure sensor. The simulation results show that, the output current of the pressure sensor varied from 355 to 3624 μA as the pressure changed from zero to 180 kPa and high pressure sensitivity of 15,18μA/kPa. Furthermore, this study emphasizes on the influence of the channel geometric parameters on the aforementioned characteristics to optimize the sensor performance.

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Design and Characterization of a CMOS MEMS Capacitive Squeeze-Film Pressure Sensor with High Sensitivity

2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS) ◽

10.1109/mems46641.2020.9056348 ◽

2020 ◽

Cited By ~ 1

Author(s):

Kuan-Yu Hsieh ◽

Jonathan Lee ◽

Michael S.-C. Lu

Keyword(s):

Pressure Sensor ◽

High Sensitivity ◽

Squeeze Film ◽

Film Pressure ◽

Cmos Mems

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Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology

ISTFA 2012: Conference Proceedings from the 38th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2012p0106 ◽

2012 ◽

Author(s):

Yuk L. Tsang ◽

Xiang D. Wang ◽

Reyhan Ricklefs ◽

Jason Goertz

Keyword(s):

Threshold Voltage ◽

Electrical Characterization ◽

Cmos Technology ◽

Short Channel ◽

Visual Defect ◽

Subthreshold Region ◽

Short Channel Effect ◽

Channel Effect ◽

Transistor Model

Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We further found that one of the parallel transistors had short channel effect due to a punch-through mechanism. It was proposed and ultimately confirmed the cause was due to a dopant defect using scanning capacitance microscopy (SCM) technique.

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