scholarly journals Noise Improvement of a-Si Microbolometers by the Post-Metal Annealing Process

Sensors ◽  
2021 ◽  
Vol 21 (20) ◽  
pp. 6722
Author(s):  
Jaesub Oh ◽  
Hyeong-sub Song ◽  
Jongcheol Park ◽  
Jong-Kwon Lee

To realize high-resolution thermal images with high quality, it is essential to improve the noise characteristics of the widely adopted uncooled microbolometers. In this work, we applied the post-metal annealing (PMA) process under the condition of deuterium forming gas, at 10 atm and 300 °C for 30 min, to reduce the noise level of amorphous-Si microbolometers. Here, the DC and temperature coefficient of resistance (TCR) measurements of the devices as well as 1/f noise analysis were performed before and after the PMA treatment, while changing the width of the resistance layer of the microbolometers with 35 μm or 12 μm pixel. As a result, the microbolometers treated by the PMA process show the decrease in resistance by about 60% and the increase in TCR value up to 48.2% at 10 Hz, as compared to the reference device. Moreover, it is observed that the noise characteristics are improved in inverse proportion to the width of the resistance layer. This improvement is attributed to the cured poly-silicon grain boundary through the hydrogen passivation by heat and deuterium atoms applied during the PMA, which leads to the uniform current path inside the pixel.

The investigations described in the present paper deal principally with the phenomena of annealing. They form a continuation of the research described in the Bakerian Lecture for 1899 (‘Phil. Trans.,’A, vol. 193, 1900, pp. 353-377). In iron, steel, and brass these phenomena have been studied with the aid of the microscope by various workers, among whom Arnold, Charpy, Stead, and Roberts-Austen should be particularly mentioned. As a result of their labours it is well known that annealing is accompanied by a re-arrangement of the crystalline grains of the metal. Thus, when a piece of iron is strained in tension its crystalline grains become elongated in the direction of tension ; but when the specimen has been subsequently annealed by being heated to a bright red, all signs of such elongation disappear from the crystalline pattern revealed by the microscope. In fact it is not generally possible to find any definite connection between the crystalline pattern seen in the same specimen before and after annealing. In general, the pattern seen after annealing resembles that found in a similar specimen before it has been strained, but the scale and character of the pattern produced depend very much on the details of the annealing process, particularly upon the temperature applied, the time of its application, and the rate of cooling. Arnold and Stead have shown that prolonged annealing tends to produce large crystals in iron and steel. But even short exposure to a suitable temperature is well known to produce complete re­crystallisation, and it has been suggested that these changes occur at critical points corresponding to the “arrest-points” in the cooling of the metal. These arrest-points indicate evolutions of heat, and it is natural to suppose that they are evi­dences of re-arrangement of the structure of the metal.


Author(s):  
A. Lanzini ◽  
P. Leone ◽  
M. Santarelli ◽  
P. Asinari ◽  
M. Cali`

The performance of solid oxide fuel cells is affected by various polarization losses, usually grouped in ohmic, activation and concentration polarization. Under typical operating conditions, these polarization losses are largely dependent on cell materials, electrode microstructures, and cell geometry: as an example, the performance of a tubular cell is strongly limited by the ohmic polarization due to the long current path of electrons, while in a planar cell each of these losses has a comparable effect. It is therefore of interest, in case of planar geometry, to investigate the performance limiting factors. In this paper, a performance evaluation of planar circular-shaped seal-less SOFC cells from InDEC® was performed, with an outline of the limiting factors at reduced temperature. Two different designs of planar cells are considered: both have porous NiO-YSZ anode as mechanical support, NiO-YSZ anode active layer, yttria-stabilized zirconia (YSZ) electrolyte, and only differ for the cathode design: (1) strontium doped lanthanum manganate (LSM)-YSZ cathode functional layer (CFL) and LSM cathode current collector layer (CCCL); (2) yttria doped ceria (YDC) blocking layer and lanthanum strontium cobalt ferrite oxide (LSCF) functional layer. The characterization was performed by taking V-I measurements over a range of temperatures between 650°C and 840°C with hydrogen as fuel, and air as oxidant. The dependence of the cell performance on the various polarization contributions was rationalized on the basis of a analytical model, through a parameter estimation on the experimental data, devoted to the determination of the temperature dependence of the area specific resistance (ASR) and of the cathode exchange current density: in particular, the performance limitation at low temperature is due to activation polarization for ASC1 and ohmic polarization for ASC2. Based on the results of the investigation, it is concluded that LSCF cathodes are really effective for decreasing the cathode activation polarization, allowing the reduction of operating temperature. Finally, a microstructural analysis with SEM and optical microscopy has been performed on the ASC2 cell after the polarization testing. The aim of this investigation was in particular to evaluate the degradation phenomena occurring in the anodic structure and over the interfaces between the various active layers. The ASC2 elastic modulus has also been estimated before and after polarization testing in order to evaluate the decreasing of the mechanical strength of the cell after a complete thermal cycle. The results describe a mechanical degradation of the structure and of the distribution of the phases.


2007 ◽  
Vol 989 ◽  
Author(s):  
Lode Carnel ◽  
Ivan Gordon ◽  
Dries Van Gestel ◽  
Guy Beaucarne ◽  
Jef Poortmans

AbstractThin-film polysilicon solar cells are a promising low-cost alternative for bulk silicon solar cells. Due to their reduced material thickness, these solar cells are less dependent on the silicon feedstock price. Until now these devices showed a worse performance compared to bulk Si solar cells due to the small grain size and the high recombination velocity at the grain boundaries. A better understanding of hydrogen passivation is therefore of crucial importance to improve the efficiency of polysilicon solar cells. In this work we characterized fine-grained polysilicon layers with a grain size of only 0.2 μm before and after passivation. Plasma hydrogenation led to a higher hydrogen concentration in the first micron of the layer than nitride passivation. The highest efficiency of 5.0 % was reached when nitride passivation was followed by plasma passivation.


2010 ◽  
Vol 35 (4) ◽  
pp. 551-564 ◽  
Author(s):  
Józef Kotus ◽  
Maciej Szczodrak ◽  
Andrzej Czyżewski ◽  
Bożena Kostek

AbstractThe results of long-term continuous noise measurements in two selected schools are presented in the paper. Noise characteristics were measured continuously there for approximately 16 months. Measurements started eight months prior to the acoustic treatment of the school corridors of both schools. An evaluation of the acoustic climates in both schools, before and after the acoustic treatment, was performed based on comparison of these two periods of continuous measurements. The autonomous noise monitoring stations, engineered at the Multimedia Systems Department of the Gdańsk University of Technology were used for this purpose. Investigations of measured noise, especially its influence on hearing sense, assessed on ground of spectral analyses in critical bands, is discussed. Effects of occupational noise exposure, including the Temporary Threshold Shift simulation, are determined. The correlation of the above said measurement results with respective instantaneous noise levels is discussed, and concluding remarks are presented. Some additional indicators such as air pollution or video analysis aiming at the analysis of corridor occupancy are also measured. It should be remembered that excessive noise, or air pollution may be evidence of a dangerous event and may pose health risks.


2007 ◽  
Vol 1031 ◽  
Author(s):  
Shun-Wei Liu ◽  
Chih-Chien Lee ◽  
Ping-Tsung Huang ◽  
Chin-Ti Chen ◽  
Juen-Kai Wang

AbstractThe authors report the study of the dependence of the device performance of polymer solar cells based on single 50-nm heterojunction poly(3-hexylthiophene)/[6,6]-phenyl-C61-butyric acid methylester (P3HT/PCBM) layer on annealing process. Annealing before and after cathode deposition were performed for comparison. In the case of post-annealing at 150¢XC for 60 min., the device attains a conversion efficiency of 4.9%, a fill factor of 53 %, and an open-circuit voltage of 0.67 V. These values are comparable with the highest values reported previously. The annealing process is expected to modify the network morphology of the P3HT/PCBM layer. This study demonstrates that it is possible to attain good solar cell performance with the combination of single thin active layer and post-annealing treatment. This may open up an opportunity to fabricate tandem polymer solar cells.


2019 ◽  
Vol 6 (1) ◽  
pp. 23-29
Author(s):  
Haidar Howari

Studies of pulsed laser annealing (PLA) on semiconductor thin films were performed to examine changes of the optical and structural parameters due to the laser heat. Thin films of ZnS/ZnSe were deposited on quartz substrates at a pressure of 8.2*10-6 mbar using PVD technique. These thin films were annealed at different laser powers using CO2 pulsed laser. Transmission and reflection spectra were recorded before and after the annealing process. A decrease in the transmission and reflection spectra after annealing is observed. The absorption coefficient, refractive index, damping coefficient and dielectric constant were calculated before and after the annealing process. Changes in the optical parameters are found after the annealing process. The energy band gaps of ZnS and ZnSe have been determined. Upon annealing, an increase in the absorption coefficient is observed which is due to an improvement in the granular nanostructure of the ZnS/ZnSe thin films. XRD patterns of the prepared samples were obtained before and after the annealing procedure and revealed an enhancement in the crystallite structure upon annealing.


2018 ◽  
Vol 19 (9) ◽  
pp. 2639 ◽  
Author(s):  
Zi-Yin Zhang ◽  
Yun-Sheng Deng ◽  
Hai-Bing Tian ◽  
Han Yan ◽  
Hong-Liang Cui ◽  
...  

Graphene-based nanopore devices have shown tantalizing potential in single molecule detection for their monoatomic membrane thickness which is roughly equal to the gap between nucleobases. However, high noise level hampers applications of graphene nanopore sensors, especially at low frequencies. In this article, we report on a study of the contribution of suspended graphene area to noise level in full frequency band. Monolayer graphene films are transferred onto SiNx substrates preset with holes in varied diameters and formed self-supported films. After that, the films are perforated with smaller, nanoscale holes. Experimental studies indicate a dependency of low-frequency 1/f noise on the underlying SiNx geometry. The contribution of the suspended graphene area to capacitance which affects the noise level in the high frequency range reveals that the graphene free-standing film area influences noise level over a wide frequency region. In addition, the low-frequency noise demonstrates a weak dependency on salt concentration, in deviation from Hooge’s relation. These findings and attendant analysis provide a systematic understanding of the noise characteristics and can serve as a guide to designing free-standing monolayer graphene nanopore devices.


2020 ◽  
Vol 1014 ◽  
pp. 14-21
Author(s):  
Wen Kai Yue ◽  
Zhi Min Li ◽  
Xiao Wei Zhou ◽  
Jin Xing Wu ◽  
Pei Xian Li

In this study, the effect of a high-temperature annealing process on AlN is investigated. The high-temperature annealing process reduces the screw dislocation density of the AlN film to 2.1x107 cm-2. The AlN surface is highly flat. Through HRXRD and Raman spectroscopy, the stress mode changes in the sputtered AlN film before and after high-temperature annealing were studied in depth. Based on the HTA-AlN template, a high-quality, high-Al composition AlGaN epitaxial wafer, with a (0002) plane rocking curve FWHM of 246 arcsec , was prepared at 1080°C The growth mode of AlGaN grown directly on the AlN template at low temperature is summarized.


2010 ◽  
Vol 34-35 ◽  
pp. 1578-1582
Author(s):  
Li Jun Dong ◽  
Quan Yi Yang ◽  
Xin Yu Huang

The effects of homogenizing annealing process on the microstructures and properties of Mg-Gd-Y-Zr magnesium alloy were investigated and the fracture of specimens before and after homogenizing annealing was also analysized by optical microscopy,X-ray diffraction analysis etc.The results show that after homogenizing annealing,dendritic segregation is almost eliminated and the microstructures and properties of alloy are improved. The annealing temperature played a main role in homogenizing of Mg-Gd-Y-Zr alloy. The optimal homogenizing annealing process is at 480°C for 8h.


2006 ◽  
Vol 06 (04) ◽  
pp. L427-L432 ◽  
Author(s):  
G. GHIBAUDO ◽  
J. JOMAAH ◽  
F. BALESTRA

In this work, we calculate, for the first time, the impact of carrier trapping at the gate polysilicon/oxide interface on the LF noise characteristics of polygate MOSFET's. After extending the channel LF noise analysis, based on carrier number and correlated mobility fluctuations approaches, to include charge variations at the polySi/oxide interface, we derive analytical expressions accounting for the impact of fluctuations of poly/oxide interfacial charge on the channel drain current and input gate voltage noise as a function of gate bias, polysilicon doping concentration and gate oxide thickness.


Sign in / Sign up

Export Citation Format

Share Document