scholarly journals Noise Analysis of Monolayer Graphene Nanopores

2018 ◽  
Vol 19 (9) ◽  
pp. 2639 ◽  
Author(s):  
Zi-Yin Zhang ◽  
Yun-Sheng Deng ◽  
Hai-Bing Tian ◽  
Han Yan ◽  
Hong-Liang Cui ◽  
...  
Keyword(s):  
Noise Level ◽  
Noise Analysis ◽  
Low Frequency ◽  
Monolayer Graphene ◽  
Frequency Noise ◽  
Membrane Thickness ◽  
Free Standing ◽  
Suspended Graphene ◽  
Noise Characteristics ◽  
Graphene Nanopore

Graphene-based nanopore devices have shown tantalizing potential in single molecule detection for their monoatomic membrane thickness which is roughly equal to the gap between nucleobases. However, high noise level hampers applications of graphene nanopore sensors, especially at low frequencies. In this article, we report on a study of the contribution of suspended graphene area to noise level in full frequency band. Monolayer graphene films are transferred onto SiNx substrates preset with holes in varied diameters and formed self-supported films. After that, the films are perforated with smaller, nanoscale holes. Experimental studies indicate a dependency of low-frequency 1/f noise on the underlying SiNx geometry. The contribution of the suspended graphene area to capacitance which affects the noise level in the high frequency range reveals that the graphene free-standing film area influences noise level over a wide frequency region. In addition, the low-frequency noise demonstrates a weak dependency on salt concentration, in deviation from Hooge’s relation. These findings and attendant analysis provide a systematic understanding of the noise characteristics and can serve as a guide to designing free-standing monolayer graphene nanopore devices.

IMPACT OF GATE POLYSILICON INTERFACE ON CARRIER TRAPPING LOW FREQUENCY NOISE IN ADVANCED MOSFET'S

2006 ◽  
Vol 06 (04) ◽  
pp. L427-L432 ◽  
Author(s):  
G. GHIBAUDO ◽  
J. JOMAAH ◽  
F. BALESTRA
Keyword(s):  
Noise Analysis ◽  
Low Frequency ◽  
Drain Current ◽  
Oxide Thickness ◽  
Frequency Noise ◽  
Oxide Interface ◽  
Carrier Trapping ◽  
Noise Characteristics ◽  
Input Gate ◽  
The Impact

In this work, we calculate, for the first time, the impact of carrier trapping at the gate polysilicon/oxide interface on the LF noise characteristics of polygate MOSFET's. After extending the channel LF noise analysis, based on carrier number and correlated mobility fluctuations approaches, to include charge variations at the polySi/oxide interface, we derive analytical expressions accounting for the impact of fluctuations of poly/oxide interfacial charge on the channel drain current and input gate voltage noise as a function of gate bias, polysilicon doping concentration and gate oxide thickness.

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 428-431 ◽  
Author(s):  
Lucy Claire Martin ◽  
Hua Khee Chan ◽  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

The Research of Noise Characteristics on Shenzhen Metro Platform

2015 ◽  
Vol 741 ◽  
pp. 426-430
Author(s):  
Jian Hui Tian ◽  
Bing Li ◽  
Lian Jian
Keyword(s):  
Noise Level ◽  
Air Conditioning ◽  
Low Frequency ◽  
Noise Spectrum ◽  
Vibration Measurement ◽  
Frequency Noise ◽  
Fan Noise ◽  
Noise Characteristics ◽  
Analysis System ◽  
System Time

The noise SPL and spectrum characteristics were tested and analyzed for the Shenzhen metro platform when the metro is inbound and outbound by using the noise and vibration measurement and analysis system. Time-domain SPL distribution diagrams shows, causing the largest noise level inside platform is mainly from the station radio, when no station radio, metro wheel-rail noise and air-conditioning fan noise have become a major SPL source in platform. The noise level at the platform is between 73dB-76dB. Frequency domain noise spectrum diagram shows, the noise SPL peak appeared in both low frequency and mid frequency ranges. Low frequency noise peak appears at 125Hz and 250Hz frequency band, mainly from the site of passengers talking and footsteps. Mid frequency noise peak is located in the 500Hz-1000Hz range, mainly from station radio, metro wheel-rail noise and air-conditioning fan and so on. This study provides a reference for noise reduction design of the metro platform.

Investigation of Low-Frequency Noise Characteristics in Gated Schottky Diodes

2021 ◽  
Vol 42 (3) ◽  
pp. 442-445
Author(s):  
Dongseok Kwon ◽  
Wonjun Shin ◽  
Jong-Ho Bae ◽  
Suhwan Lim ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Schottky Diodes ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Effects of Diffuser Vane Geometries on Compressor Performance and Noise Characteristics in a Centrifugal Compressor

2013 ◽  
Author(s):  
Yohei Morita ◽  
Nobumichi Fujisawa ◽  
Takashi Goto ◽  
Yutaka Ohta
Keyword(s):  
Centrifugal Compressor ◽  
Noise Level ◽  
Leading Edge ◽  
Broadband Noise ◽  
Frequency Noise ◽  
Numerical Techniques ◽  
Vaned Diffuser ◽  
Noise Characteristics ◽  
Edge Vortex ◽  
Compressor Performance

The effects of the diffuser vane geometries on the compressor performance and noise characteristics of a centrifugal compressor equipped with vaned diffusers were investigated by experiments and numerical techniques. Because we were focusing attention on the geometries of the diffuser vane’s leading edge, diffuser vanes with various leading edge geometries were installed in a vaned diffuser. A tapered diffuser vane with the tapered portion near the leading edge of the diffuser’s hub-side could remarkably reduce both the discrete frequency noise level and broadband noise level. In particular, a hub-side tapered diffuser vane with a taper on only the hub-side could suppress the development of the leading edge vortex (LEV) near the shroud side of the diffuser vane and effectively enhanced the compressor performance.

Low-Frequency Noise Characteristics in Strained-Si nMOSFETs

2007 ◽  
Vol 28 (1) ◽  
pp. 36-38 ◽  
Author(s):  
Yen Ping Wang ◽  
San Lein Wu ◽  
Shoou Jinn Chang
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Strained Si ◽  
Noise Characteristics
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