scholarly journals Recent Progress in Improving the Performance of Infrared Photodetectors via Optical Field Manipulations

Sensors ◽  
2022 ◽  
Vol 22 (2) ◽  
pp. 677
Author(s):  
Jian Chen ◽  
Jiuxu Wang ◽  
Xin Li ◽  
Jin Chen ◽  
Feilong Yu ◽  
...  
Keyword(s):  
High Performance ◽  
Recent Progress ◽  
Transition Metal Dichalcogenides ◽  
Field Enhancement ◽  
Night Vision ◽  
Infrared Photodetectors ◽  
Strong Light ◽  
Automatic Driving ◽  
Metal Dichalcogenides ◽  
Flexible Integration

Benefiting from the inherent capacity for detecting longer wavelengths inaccessible to human eyes, infrared photodetectors have found numerous applications in both military and daily life, such as individual combat weapons, automatic driving sensors and night-vision devices. However, the imperfect material growth and incomplete device manufacturing impose an inevitable restriction on the further improvement of infrared photodetectors. The advent of artificial microstructures, especially metasurfaces, featuring with strong light field enhancement and multifunctional properties in manipulating the light–matter interactions on subwavelength scale, have promised great potential in overcoming the bottlenecks faced by conventional infrared detectors. Additionally, metasurfaces exhibit versatile and flexible integration with existing detection semiconductors. In this paper, we start with a review of conventionally bulky and recently emerging two-dimensional material-based infrared photodetectors, i.e., InGaAs, HgCdTe, graphene, transition metal dichalcogenides and black phosphorus devices. As to the challenges the detectors are facing, we further discuss the recent progress on the metasurfaces integrated on the photodetectors and demonstrate their role in improving device performance. All information provided in this paper aims to open a new way to boost high-performance infrared photodetectors.

scholarly journals Emerging technologies for high performance infrared detectors

Nanophotonics ◽  
2018 ◽  
Vol 7 (1) ◽  
pp. 169-197 ◽  
Author(s):  
Chee Leong Tan ◽  
Hooman Mohseni
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Night Vision ◽  
Optical Antennas ◽  
Antireflection Coatings ◽  
Semiconductor Superlattice ◽  
Metal Dichalcogenides ◽  
Low Dimensional ◽  
Defect Imaging

AbstractInfrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

Highly electroconductive and uniform WS2 film growth by sulfurization of W film using diethyl sulfide

2021 ◽  
Author(s):  
Yoobeen Lee ◽  
Jin Won Jung ◽  
Jin Seok Lee
Keyword(s):  
Transition Metal ◽  
Grain Boundaries ◽  
High Performance ◽  
Film Growth ◽  
Transition Metal Dichalcogenides ◽  
Electronic Systems ◽  
Intrinsic Defects ◽  
Diethyl Sulfide ◽  
Metal Dichalcogenides

The reduction of intrinsic defects, including vacancies and grain boundaries, remains one of the greatest challenges to produce high-performance transition metal dichalcogenides (TMDCs) electronic systems. A deeper comprehension of the...

scholarly journals High-performance flexible nanoscale transistors based on transition metal dichalcogenides

2021 ◽  
Author(s):  
Alwin Daus ◽  
Sam Vaziri ◽  
Victoria Chen ◽  
Çağıl Köroğlu ◽  
Ryan W. Grady ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Metal Dichalcogenides ◽  
Nanoscale Transistors

scholarly journals Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices

2019 ◽  
Vol 10 (1) ◽  
Author(s):  
Lei Yin ◽  
Peng He ◽  
Ruiqing Cheng ◽  
Feng Wang ◽  
Fengmei Wang ◽  
...  
Keyword(s):  
Transition Metal ◽  
High Performance ◽  
Infrared Detector ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Electric Transport ◽  
Defect Engineering ◽  
Fast Switching ◽  
Metal Dichalcogenides ◽  
Poor Stability

Abstract Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS2xSe2(1-x) via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 105 A W−1) and photoswitching ratio (~108), as well as nonvolatile infrared memory with high program/erase ratio (~108) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.

Strong coupling in two-dimensional materials-based nanostructures: a review

2022 ◽  
Author(s):  
Ye Ming Qing ◽  
Yongze Ren ◽  
Dangyuan Lei ◽  
Hui Feng Ma ◽  
Tie Jun Cui
Keyword(s):  
Strong Coupling ◽  
Coupling Effect ◽  
Transition Metal Dichalcogenides ◽  
Hybrid Nanostructures ◽  
Two Dimensional ◽  
Strong Light ◽  
Two Dimensional Materials ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Emission Behavior

Abstract Strong interaction between electromagnetic radiation and matter leads to the formation of hybrid light-matter states, making the absorption and emission behavior different from those of the uncoupled states. Strong coupling effect results in the famous Rabi splitting and the emergence of new polaritonic eigenmodes, exhibiting spectral anticrossing behavior and unique energy-transfer properties. In recent years, there has been a rapidly increasing number of works focusing on strong coupling between nanostructures and two-dimensional materials (2DMs), because of the exceptional properties and applications they demonstrate. Here, we review the significant recent advances and important developments of strong light-matter interactions in 2DMs-based nanostructures. We adopt the coupled oscillator model to describe the strong coupling and give an overview of various hybrid nanostructures to realize this regime, including graphene-based nanostructures, black phosphorus-based nanostructures, transition-metal dichalcogenides-based nanostructures, etc. In addition, we discuss potential applications that can benefit from these effects and conclude our review with a perspective on the future of this rapidly emerging field.

scholarly journals Monolayer MoS2 for nanoscale photonics

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1557-1577 ◽  
Author(s):  
Xianguang Yang ◽  
Baojun Li
Keyword(s):  
Near Infrared ◽  
Transition Metal Dichalcogenides ◽  
Single Layer ◽  
Band Gaps ◽  
Laser Source ◽  
Two Dimensional ◽  
Strong Light ◽  
Metal Dichalcogenides ◽  
Optoelectronic Applications ◽  
Flexible Photodetector

AbstractTransition metal dichalcogenides are two-dimensional semiconductors with strong in-plane covalent and weak out-of-plane interactions, resulting in exfoliation into monolayers with atomically thin thickness. This creates a new era for the exploration of two-dimensional physics and device applications. Among them, MoS2 is stable in air and easily available from molybdenite, showing tunable band-gaps in the visible and near-infrared waveband and strong light-matter interactions due to the planar exciton confinement effect. In the single-layer limit, monolayer MoS2 exhibits direct band-gaps and bound excitons, which are fundamentally intriguing for achieving the nanophotonic and optoelectronic applications. In this review, we start from the characterization of monolayer MoS2 in our group and understand the exciton modes, then explore thermal excitons and band renormalization in monolayer MoS2. For nanophotonic applications, the recent progress of nanoscale laser source, exciton-plasmon coupling, photoluminescence manipulation, and the MoS2 integration with nanowires or metasurfaces are overviewed. Because of the benefits brought by the unique electronic and mechanical properties, we also introduce the state of the art of the optoelectronic applications, including photoelectric memory, excitonic transistor, flexible photodetector, and solar cell. The critical applications focused on in this review indicate that MoS2 is a promising material for nanophotonics and optoelectronics.

scholarly journals Recent progress in photodetectors based on low-dimensional nanomaterials

2018 ◽  
Vol 7 (5) ◽  
pp. 393-411 ◽  
Author(s):  
Zhenhui Li ◽  
Ke Xu ◽  
Fanan Wei
Keyword(s):  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
High Sensitivity ◽  
Chemical Doping ◽  
Future Directions ◽  
Broadband Absorption ◽  
Metal Dichalcogenides ◽  
Ir Detection ◽  
Low Dimensional ◽  
Bohr Exciton Radius

Abstract Photodetectors (PDs) have great potential in applications of imaging, telecommunication, and biological sensing. In this article, state-of-the-art achievements on typical low-dimensional nanostructured PDs and hybrid PDs are reviewed. In the 2D nanostructured PDs part, 2D transition metal dichalcogenides have a natural gap, which promise high sensitivity of photodetection. Graphene and black phosphorus can also stand for 2D nanostructured PDs due to their broadband absorption and tunable direct bandgap, respectively. In the 1D nanostructured PDs part, owing to its high photoconductive characteristic, ZnO nanowire film is a promising material for ultraviolet PDs. Carbon nanotubes show potential in infrared (IR) detection due to its unique physical properties. In the 0D nanostructured PDs part, lead sulfide has a small bandgap and large Bohr exciton radius, which collectively give it a wide spectral tunability in the IR. In the hybrid PDs part, electrical and chemical doping is applied to combine different nanomaterials to realize PDs with high performance. In each part, the present situation and major challenges are overviewed. Then, the evolutions of the methods to overcome these challenges and the tremendous research breakthroughs are demonstrated. At last, future directions that could improve the performance of PDs are discussed.

Tuning the catalytic functionality of transition metal dichalcogenides grown by chemical vapour deposition

2017 ◽  
Vol 5 (29) ◽  
pp. 14950-14968 ◽  
Author(s):  
Gi Woong Shim ◽  
Woonggi Hong ◽  
Sang Yoon Yang ◽  
Sung-Yool Choi
Keyword(s):  
Transition Metal ◽  
Chemical Vapour Deposition ◽  
High Performance ◽  
Vapour Deposition ◽  
Transition Metal Dichalcogenides ◽  
Chemical Vapour ◽  
Catalytic Systems ◽  
Metal Dichalcogenides

This review provides insights for the design of synthetic schemes and catalytic systems of CVD-grown functional TMDs for high performance HER applications.

scholarly journals Vertically oriented MoS2 nanosheets with vast exposed edges for enhanced electrocatalytic hydrogen evolution

2021 ◽  
Vol 245 ◽  
pp. 03019
Author(s):  
Meisheng Han ◽  
Jie Yu
Keyword(s):  
Hydrogen Evolution ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Structure Of Metal ◽  
Special Area ◽  
Metal Dichalcogenides ◽  
Complex Preparation ◽  
Catalytic Stability ◽  
Electrochemical Water Splitting ◽  
A Current

Molybdenum disulfide (MoS2), a typical two-dimensional transition metal dichalcogenides, is a promising candidate for electrochemical water splitting catalysis due to its ultrahigh special area and highly exposed active edge sites. The main challenges restricted the wider application for MoS2-based nanomaterials are the complex preparation process and the high overpotential. Here, we design a novel and facile sealed vessel to synthesize vertical oriented MoS2 nanosheets electrocatalyst with vast exposed edges. Benefiting from the unique vertically-oriented structural and compositional characteristics, the MoS2 nanosheets with 10-20 layers exhibits superior hydrogen evolution reaction (HER) performance with a small overpotential of 135.2 mV at a current density of 10 mA∙cm-2 and low Tafel slope of 82.5 mV∙dec-1 as well as extraordinary catalytic stability over 5000 cycles. Importantly, the sealed vessel reactor system may open up a versatile and potential synthetic way to construct various morphologies and structure of metal dichalcogenides for high-performance energy storage and conversions devices.

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