scholarly journals Second Order Low Pass RC Active Filter for Low Frequency Signal Processing

The different parameters define the characteristics of filter for various applications like: Biomedical applications, Defense communication systems, Wireless Communication systems etc. The mostly measured parameters for filter designing are frequency range, cut off frequency, gain, power consumption, and noise. In this paper, our work focuses on frequency range measurement at cut off frequency of Hz of second order low pass filter with designed using CMOS technology for IC fabrication. The proposed circuit gives the high frequency range at low frequency (100Hz – 10MHz) with 1mV 50Hz low power supply using complementary compound pair on the value of R=1K and C=10pH. This second order active low pass filter provides high amplification at the output with 4.861V. It is implemented and simulated on 180nm Cadence tool in terms of wide frequency range or band at cut off frequency of Hz to MHz.

Author(s):  
Hamid Radmanesh

In this paper, the application of microstrip technology is investigated in low-pass filters. A cascade microstrip low-pass filter with a sharp frequency response and a good cut-off bandwidth is presented using a modified radial resonator. The advantages of this proposed filter include minor losses in the transit band as well as the desired return. This filter design shows consistency when compared with the results of simulation and model performance. A comparison between the parameter values of this filter and previous structures indicates that it is desirable. The proposed filter can be used in modern communication systems such as aircraft distance measurement equipment (DME) antenna.


Electronics ◽  
2021 ◽  
Vol 10 (23) ◽  
pp. 2931
Author(s):  
Waldemar Jendernalik ◽  
Jacek Jakusz ◽  
Grzegorz Blakiewicz

Buffer-based CMOS filters are maximally simplified circuits containing as few transistors as possible. Their applications, among others, include nano to micro watt biomedical sensors that process physiological signals of frequencies from 0.01 Hz to about 3 kHz. The order of a buffer-based filter is not greater than two. Hence, to obtain higher-order filters, a cascade of second-order filters is constructed. In this paper, a more general method for buffer-based filter synthesis is developed and presented. The method uses RLC ladder prototypes to obtain filters of arbitrary orders. In addition, a set of novel circuit solutions with ultra-low voltage and power are proposed. The introduced circuits were synthesized and simulated using 180-nm CMOS technology of X-FAB. One of the designed circuits is a fourth-order, low-pass filter that features: 100-Hz passband, 0.4-V supply voltage, power consumption of less than 5 nW, and dynamic range above 60 dB. Moreover, the total capacitance of the proposed filter (31 pF) is 25% lower compared to the structure synthesized using a conventional cascade method (40 pF).


2019 ◽  
Vol 29 (07) ◽  
pp. 2050109
Author(s):  
Yan Li ◽  
Yong Liang Li

A novel capacitance multiplier is proposed to implement an ultra-low-frequency filter for physiological signal processing in biomedical applications. With the proposed multiplier, a simple first-order low-pass filter achieves a [Formula: see text]3-dB frequency of 33.4[Formula: see text]μHz with a 1-pF capacitance and a 20[Formula: see text]k[Formula: see text] resistance. This corresponds to a multiplication factor of as large as [Formula: see text]. By changing the controlling terminal, the [Formula: see text]3-dB frequency can be tuned in a wide range of 33.4[Formula: see text]μHz–6.3[Formula: see text]kHz.


2009 ◽  
Vol 18 (07) ◽  
pp. 1287-1308 ◽  
Author(s):  
EMAN A. SOLIMAN ◽  
SOLIMAN A. MAHMOUD

This paper presents different novel CMOS realizations for the differential difference operational floating amplifier (DDOFA). The DDOFA was first introduced in Ref. 1 and was used to realize different analog circuits like integrators, filters and variable gain amplifiers. New CMOS realizations for the DDOFA are introduced in this literature. Furthermore the DDOFA is modified to realize a fully differential current conveyor (FDCC). Novel CMOS realizations of the FDCC are presented. The FDCC is used to realize second-order band pass–low-pass filter. Performance comparisons between the different realizations of the DDOFA and FDCC are given in this literature. PSPICE simulations of the overall proposed circuits are given using 0.25 μm CMOS Technology from TMSC MOSIS model and dual supply voltages of ±1.5 V.


Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1547
Author(s):  
Xiangyu Chen ◽  
Yasuhiro Takahashi

In this paper, a transimpedance amplifier (TIA) based on floating active inductors (FAI) is presented. Compared with conventional TIAs, the proposed TIA has the advantages of a wider bandwidth, lower power dissipation, and smaller chip area. The schematics and characteristics of the FAI circuit are explained. Moreover, the proposed TIA employs the combination of capacitive degeneration, the broadband matching network, and the regulated cascode input stage to enhance the bandwidth and gain. This turns the TIA design into a fifth-order low pass filter with Butterworth response. The TIA is implemented using 0.18 μ m Rohm CMOS technology and consumes only 10.7 mW with a supply voltage of 1.8 V. When used with a 150 fF photodiode capacitance, it exhibits the following characteristics: gain of 41 dB Ω and −3 dB frequency of 10 GHz. This TIA occupies an area of 180 μ m × 118 μ m.


2013 ◽  
Author(s):  
Li Cai ◽  
Qiang Kang ◽  
Dang Yuan Shi

2014 ◽  
Vol 07 (02) ◽  
pp. 1450018 ◽  
Author(s):  
A. F. Qasrawi ◽  
Faten M. Bzour ◽  
Eman O. Nazzal ◽  
A. Mergen

In this work, the electrical properties of samarium-doped bismuth niobium zinc oxide ( Sm -doped BZN ) pyrochlore ceramics are investigated by means of temperature dependent electrical conductivity and capacitance spectroscopy in the frequency range of 0–3 GHz. It was observed that the novel dielectric Sm - BZN ceramic exhibits a temperature and electric field dependent dielectric breakdown. When measured at 300 K, the breakdown electric field is 1.12 kV/cm and when heated the breakdown temperature is ~ 420 K. The pyrochlore is thermally active above 440 K with conductivity activation energy of 1.37 eV. In addition, the room temperature capacitance spectra reflected a resonance–antiresonance switching property at 53 MHz when subjected to an AC signal of low power of 5 dBm. Furthermore, when the Sm - BZN ceramics are used as microwave cavity and tested in the frequency range of 1.0–3.0 GHz, the cavity behaves as low pass filter with wide tunability up to a frequency of 1.91 GHz. At this frequency it behaves as a band rejection filter that blocks waves of 1.91 GHz and 2.57 GHz frequencies. These properties of the Sm -doped BZN are promising as they indicate the usability of the ceramics in digital electronic circuits as resonant microwave cavities suitable for the production of low pass/rejection band filters.


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