Influence of the time-dependent vapor composition on structural properties of the BaSi2 thin films fabricated by vacuum evaporation

This paper reports on the structural properties of poly(3-methylthiophene) P3MeT thin films prepared by vacuum evaporation on the glass substrates. The structural and surface morphology, wettability, adhesion, and intrinsic stress of these thin films were studied for three different thicknesses. The variation of the film thickness affects the structure, surface, and mechanical properties of P3MeT thin films. Vapor chopping also strongly influences the surface morphology, surface roughness, and wettability of the thin films. It was found that there is a decrease in the intrinsic stress and (RMS) roughness, while the adhesion increases with increase in film thickness.

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Optical and structural properties of lead iodide thin films prepared by vacuum evaporation method

Crystal Research and Technology ◽

10.1002/crat.200811160 ◽

2008 ◽

Vol 43 (9) ◽

pp. 959-963 ◽

Cited By ~ 25

Author(s):

T. Ghosh ◽

S. Bandyopadhyay ◽

K. K. Roy ◽

S. Kar ◽

A. K. Lahiri ◽

...

Keyword(s):

Thin Films ◽

Structural Properties ◽

Vacuum Evaporation ◽

Lead Iodide ◽

Evaporation Method

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Structural properties of V2O5 thin films prepared by vacuum evaporation

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2003.08.017 ◽

2003 ◽

Vol 6 (5-6) ◽

pp. 543-546 ◽

Cited By ~ 39

Author(s):

R.T. Rajendra Kumar ◽

B. Karunagaran ◽

V. Senthil Kumar ◽

Y.L. Jeyachandran ◽

D. Mangalaraj ◽

...

Keyword(s):

Thin Films ◽

Structural Properties ◽

Vacuum Evaporation ◽

V2o5 Thin Films

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Oxygen partial pressure dependence of the structural properties of CdO thin films deposited by a modified reactive vacuum evaporation process

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2003.11.039 ◽

2005 ◽

Vol 89 (2-3) ◽

pp. 205-210 ◽

Cited By ~ 35

Author(s):

F.C. Eze

Keyword(s):

Thin Films ◽

Oxygen Partial Pressure ◽

Partial Pressure ◽

Structural Properties ◽

Pressure Dependence ◽

Vacuum Evaporation ◽

Evaporation Process ◽

Cdo Thin Films

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Rapid Thermal Annealing Effects on the Electrical and Structural Properties of ITO Thin Films Deposited at Room Temperature

Korean Journal of Metals and Materials ◽

10.3365/kjmm.2013.51.9.691 ◽

2013 ◽

Vol 51 (9) ◽

pp. 691-699

Author(s):

Se-Young Choi ◽

Sung Jin Kim ◽

Kyoon Choi

Keyword(s):

Thin Films ◽

Structural Properties ◽

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Room Temperature ◽

Ito Thin Films ◽

Annealing Effects

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Progressive Debonding of Multilayer Interconnect Structures

MRS Proceedings ◽

10.1557/proc-473-21 ◽

1997 ◽

Vol 473 ◽

Cited By ~ 9

Author(s):

Michael Lane ◽

Robert Ware ◽

Steven Voss ◽

Qing Ma ◽

Harry Fujimoto ◽

...

Keyword(s):

Thin Films ◽

Crack Growth ◽

Driving Force ◽

Adhesion Energy ◽

Time Dependent ◽

Multilayer Thin Films ◽

Processing Conditions ◽

Interface Morphology ◽

Entire Sample ◽

Crack Growth Velocity

ABSTRACTProgressive (or time dependent) debonding of interfaces poses serious problems in interconnect structures involving multilayer thin films stacks. The existence of such subcriticai debonding associated with environmentally assisted crack-growth processes is examined for a TiN/SiO2 interface commonly encountered in interconnect structures. The rate of debond extension is found to be sensitive to the mechanical driving force as well as the interface morphology, chemistry, and yielding of adjacent ductile layers. In order to investigate the effect of interconnect structure, particularly the effect of an adjacent ductile Al-Cu layer, on subcriticai debonding along the TiN/SiO2 interface, a set of samples was prepared with Al-Cu layer thicknesses varying from 0.2–4.0 μm. All other processing conditions remained the same over the entire sample run. Results showed that for a given crack growth velocity, the debond driving force scaled with Al-Cu layer thickness. Normalizing the data by the critical adhesion energy allowed a universal subcriticai debond rate curve to be derived.

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