scholarly journals Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures

2018 ◽  
Vol 9 ◽  
pp. 954-962 ◽  
Author(s):  
Susann Liedtke ◽  
Christoph Grüner ◽  
Jürgen W Gerlach ◽  
Bernd Rauschenbach
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Incidence Angle ◽  
Electron Beam Evaporation ◽  
Oblique Angle Deposition ◽  
Si Substrates ◽  
Wide Range ◽  
Oblique Deposition ◽  
Different Temperatures ◽  
The Impact

Metals with a wide range of melting points are deposited by electron beam evaporation under oblique deposition geometry on thermally oxidized Si substrates. During deposition the sample holder is cooled down to 77 K. It is observed that all obliquely deposited metals grow as tilted, high aspect ratio columns and hence with a similar morphology. A comparison of such columns with those deposited at room temperature (300 K) reveals that shadowing dominates the growth process for columns deposited at 77 K, while the impact of surface diffusion is significantly increased at elevated substrate temperatures. Furthermore, it is discussed how the incidence angle of the incoming particle flux and the substrate temperature affect the columnar tilt angles and the porosity of the sculptured thin films. Exemplarily for tilted Al columns deposited at 77 K and at 300 K, in-plane pole figure measurements are carried out. A tendency to form a biaxial texture as well as a change in the crystalline structure depending on the substrate temperature is found for those films.

Surface Roughness in Alumina Thin Film Deposited on Silica Using Oblique Incidence

2014 ◽  
Vol 787 ◽  
pp. 373-377 ◽  
Author(s):  
Li Jun He ◽  
Chuan Li ◽  
Xing Zhao Liu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Oblique Angle Deposition ◽  
Inclined Angle ◽  
Physical And Chemical

The main characteristics of a surface are physical and chemical structure, surface tension and surface roughness. Surface roughness is one of the critical factors, which could cause instability in quality performance. In this paper, surface roughness of alumina thin films deposited on a silicon substrate by using electron beam evaporation with oblique angle deposition were studied. It has been found that the surface roughness of the alumina thin films was dependent on the substrate temperature, the deposition rate, the film thickness and the inclined angle. The experimental results showed that increasing the substrate temperature reduced the surface roughness at a low inclined angle and enhanced the surface roughness at a high inclined angle, and the surface roughness increased with increasing deposition rate and film thickness. By choosing the appropriate film preparation parameters, the film surface roughness was effectively controlled.

Effect of Substrate Temperature on the Electronic Properties of MgO Thin Films on Si (100) Grown by Electron Beam Evaporation

2020 ◽  
Vol 841 ◽  
pp. 243-247
Author(s):  
Yus Rama Denny ◽  
Teguh Firmansyah ◽  
Vaka Gustiono ◽  
Sang Su Lee
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Substrate Temperature ◽  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Surface Characterization ◽  
Ultra Violet ◽  
Primary Energy ◽  
Electron Beam Evaporation ◽  
Si Substrates

The surface characterization of MgO thin films was investigated by using surface analysis instruments such as X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS) and ultra-violet photoelectron spectroscopy (UPS). The MgO thin films was prepared on Si substrates by using electron beam evaporation deposited at room temperature (RT) and 300 °C in air. The XPS was used to investigate the effect substrate temperature on the chemical state in the thin films surface. The O1s spectra was showed that the hydrate MgO, Mg(OH)2, was detected in the surface of film at RT and it was decreasing at substrate temperature of 300 °C in air. The band gap obtained for MgO thin films using primary energy of 1500 eV were 6.57 and 7.41 eV for film deposited at RT and 300 °C in air, respectively. The work function of MgO thin films were 4.16 and 4.60 eV for films deposited at RT and 300 °C in air, respectively. Our results suggested that the electronic properties can be improved by the heating treatment during deposition.

LUMINESCENT PROPERTIES OF SOL-GEL DEPOSITED Eu:TiO2 THIN FILMS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 769-773 ◽  
Author(s):  
M. GARCIA-ROCHA ◽  
A. CONDE-GALLARDO ◽  
I. HERNANDEZ-CALDERON ◽  
R. PALOMINO-MERINO
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Luminescent Properties ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Glass Substrates ◽  
Corning Glass ◽  
Different Temperatures ◽  
Hecd Laser

In this work we show the results on tile growth and optical characterization of TiO 2 thin films doped with Eu atoms. Eu:TiO2 films were grown at room temperature with different Eu concentrations by sol-gel on Si Corning glass substrates. A different crystalline structure is developed for the films deposited on Corning glass than those deposited on Si as observed from x-ray diffraction experiments. Room and low temperature photoluminescence (PL) was measured by using two different lines (325 and 442 nm) of a HeCd laser. A strong PL signal associated to the 5 D 0→7 F 2 transition from Eu +3 was observed. A better emission was obtained from those films deposited on Si substrates, Finally, the evolution of the PL signal is studied when the samples are annealed at different temperatures in O 2 atmosphere.

Oblique angle deposition of TiO2 thin films prepared by electron-beam evaporation

2010 ◽  
Vol 257 (4) ◽  
pp. 1149-1153 ◽  
Author(s):  
Min Wook Pyun ◽  
Eui Jung Kim ◽  
Dae-Hwang Yoo ◽  
Sung Hong Hahn
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Electron Beam Evaporation ◽  
Oblique Angle Deposition ◽  
Oblique Angle ◽  
Tio2 Thin Films ◽  
Angle Deposition

Piezoelectric Thin Films for Sensors, Actuators, and Energy Harvesting

MRS Bulletin ◽  
2009 ◽  
Vol 34 (9) ◽  
pp. 658-664 ◽  
Author(s):  
P. Muralt ◽  
R. G. Polcawich ◽  
S. Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Energy Harvesting ◽  
Microelectromechanical Systems ◽  
Low Voltage ◽  
High Sensitivity ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Mems Devices ◽  
Si Substrates ◽  
The Impact

AbstractPiezoelectric microelectromechanical systems (MEMS) offer the opportunity for high-sensitivity sensors and large displacement, low-voltage actuators. In particular, recent advances in the deposition of perovskite thin films point to a generation of MEMS devices capable of large displacements at complementary metal oxide semiconductor-compatible voltage levels. Moreover, if the devices are mounted in mechanically noisy environments, they also can be used for energy harvesting. Key to all of these applications is the ability to obtain high piezoelectric coefficients and retain these coefficients throughout the microfabrication process. This article will review the impact of composition, orientation, and microstructure on the piezoelectric properties of perovskite thin films such as PbZr1−xTixO3 (PZT). Superior piezoelectric coefficients (e31, f of −18 C/m2) are achieved in {001}-oriented PbZr0.52Ti0.48O3 films with improved compositional homogeneity on Si substrates. The advent of such high piezoelectric responses in films opens up a wide variety of possible applications. A few examples of these, including low-voltage radio frequency MEMS switches and resonators, actuators for millimeter-scale robotics, droplet ejectors, energy scavengers for unattended sensors, and medical imaging transducers, will be discussed.

Admittance and Photoadmittance Spectroscopy of Zinc Oxide Layers Grown on p-Si Substrates by Spin Coating Method

2013 ◽  
Vol 200 ◽  
pp. 27-32
Author(s):  
Pawel Popielarski ◽  
Waclaw Bala ◽  
Kazimierz Paprocki
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Dielectric Response ◽  
Ac Conductivity ◽  
Signal Amplitude ◽  
Zno Thin Films ◽  
Si Substrates ◽  
Universal Power Law ◽  
Coating Method ◽  
Different Temperatures

In this work, the dielectric response of ZnO thin films has been studied over a temperature range of 200 K - 550 K. The dielectric response of polycrystalline ZnO thin films in the frequency domain was measured from 42 Hz - to 5 MHz with a small AC signal amplitude at different temperatures. Influence of the light on conductivity has been also investigated. A universal power law relation was brought into picture to explain the frequency dependence of AC conductivity. The temperature dependence of AC conductivity was analyzed in detail. The activation energy obtained from the temperature dependence of AC conductivity was attributed to the shallow trap-controlled space charge conduction in the bulk of the sample.

Hydrogen Gas Sensing Characterizations Based on Nanocrystalline SnO2 Thin Films Grown on SiO2/Si and Al2O3 Substrates

2017 ◽  
Vol 268 ◽  
pp. 244-248
Author(s):  
Abu Hassan Haslan ◽  
Imad Hussein Kadhim
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Gas Sensing ◽  
Sol Gel ◽  
Hydrogen Gas ◽  
Rutile Structure ◽  
Nanoparticle Distribution ◽  
Si Substrates ◽  
Coating Method ◽  
Different Temperatures

High-quality nanocrystalline (NC) SnO2 thin films were grown on SiO2/Si and Al2O3 substrates using sol–gel spin coating method. The structural properties, surface morphologies and gas sensing properties of the NC SnO2 were investigated. XRD measurements showed a tetragonal rutile structure and the diffraction peaks for NC SnO2 thin films grown on Al2O3 substrates outperformed those of NC SnO2 films grown on SiO2/Si substrates. The surface morphology of the annealed SnO2 thin films at 500 °C appeared as polycrystalline with uniform nanoparticle distribution. Hydrogen (H2) gas sensing performance of the NC SnO2 was examined for H2 concentrations ranging from 150 ppm to 1000 ppm at different temperatures (room temperature, 75 and 125 °C) for over 50 min. The room temperature sensitivities for H2 gas sensors based on NC SnO2 thin films grown on Al2O3 and SiO2/Si substrates was 2570% and 600%, respectively upon exposure to 1000 ppm of H2 gas. While the sensitivity values at 125 °C increased to 9200% and 1950%, respectively.

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