Surface Roughness in Alumina Thin Film Deposited on Silica Using Oblique Incidence

2014 ◽  
Vol 787 ◽  
pp. 373-377 ◽  
Author(s):  
Li Jun He ◽  
Chuan Li ◽  
Xing Zhao Liu
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Oblique Angle Deposition ◽  
Inclined Angle ◽  
Physical And Chemical

The main characteristics of a surface are physical and chemical structure, surface tension and surface roughness. Surface roughness is one of the critical factors, which could cause instability in quality performance. In this paper, surface roughness of alumina thin films deposited on a silicon substrate by using electron beam evaporation with oblique angle deposition were studied. It has been found that the surface roughness of the alumina thin films was dependent on the substrate temperature, the deposition rate, the film thickness and the inclined angle. The experimental results showed that increasing the substrate temperature reduced the surface roughness at a low inclined angle and enhanced the surface roughness at a high inclined angle, and the surface roughness increased with increasing deposition rate and film thickness. By choosing the appropriate film preparation parameters, the film surface roughness was effectively controlled.

scholarly journals Investigation of Morphology of Aluminum Co-Doped Scandium Stabilized Zirconia (ScAlSZ) Thin Films

Coatings ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 31
Author(s):  
Arvaidas Galdikas ◽  
Mantas Sriubas ◽  
Gediminas Kairaitis ◽  
Darius Virbukas ◽  
Kristina Bockute ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Surface Roughness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Film Surface ◽  
Lateral Size ◽  
Stabilized Zirconia ◽  
Co Doped

The morphology of aluminum co-doped scandium stabilized zirconia (ScAlSZ) thin films formed by e-beam deposition system was investigated experimentally and theoretically. The dependencies of surface roughness, and the films’ structure on deposition temperature and deposition rate were analyzed. It was shown experimentally that the dependence of the surface roughness on deposition temperature and deposition rate was not monotonic. Those dependencies were analyzed by mathematical modeling. The mathematical model includes the processes of phase separation, adsorption and diffusion process due to the film surface curvature. The impacts of substrate temperature, growth rate on surface roughness of thin films and lateral nanoparticle sizes are shown by the modeling results. Modeling showed that the roughness of the surface of grown films became higher in most cases as the substrate’s temperature rose, but the higher deposition rate resulted in lower surface roughness in most cases. The results obtained by simulations were compared to the relevant experimental data. The non-linear relationships between surface roughness of grown films and lateral size of nanoparticles were also shown by our modeling results, which suggested that the variation in the surface roughness depending on the substrate temperature and growth rate was related to the lateral size of nanoparticles.

RESIDUAL STRESSES IN OBLIQUE INCIDENCE DEPOSITED ALUMINA THIN FILM

2014 ◽  
Vol 21 (02) ◽  
pp. 1450024 ◽  
Author(s):  
LIJUN HE ◽  
CHUAN LI ◽  
XINGZHAO LIU
Keyword(s):  
Thin Film ◽  
Residual Stress ◽  
Residual Stresses ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Deposition Rate ◽  
Growth Parameters ◽  
Testing Temperature ◽  
Alumina Thin Film ◽  
Inclined Angle

Residual stresses of alumina thin film deposited on silicon substrate by using electron beam evaporation with oblique angle deposition (OAD) method are studied. The growth parameters that affect the residual stresses of alumina thin film, such as the substrate temperature, the deposition rate, the film thickness, the inclined angle, and the testing temperature are discussed. The results show that the tensile stress value decreases with the increasing substrate temperature, and the compressive stress value increases with the increasing substrate temperature at various inclined angles. Along with the deposition rate increasing, the residual stress value decreases at various inclined angles. With the increasing film thickness, the residual stress value decreases at various inclined angles. With the increasing testing temperature, the residual stress value increases at various inclined angles. While the alumina thin film residual stress value is small at high inclined angle. By choosing the appropriate film preparation parameters, the alumina thin film residual stress is effectively controlled.

The Influence of Substrate Temperature on the Morphological and Optical Properties of ZnTiO3 Thin Films Prepared by Magnetron Sputtering

2013 ◽  
Vol 804 ◽  
pp. 3-7
Author(s):  
Chao Zhan ◽  
Wen Jian Ke ◽  
Xin Ming Li ◽  
Wan Li Du ◽  
Li Juan Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Refractive Index ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Dispersion Model ◽  
Film Surface ◽  
Cubic Phase ◽  
Different Temperatures

Cubic ZnTiO3thin films have been prepared by radio frequency magnetron sputtering on n-type (100) Si substrate at different temperatures. The morphological and optical properties of ZnTiO3films in relation to substrate temperatures are investigated by spectroscopic ellipsometry (SE) and AFM as well as SEM in detail. X-ray diffraction (XRD) measurement shows that all the films have a cubic phase structure and the optimum substrate temperature to form crystalline ZnTiO3thin film is 250 °C. Through SEM and AFM, the particle size in thin films and film surface roughness increase with increasing the substrate temperature. Based on a parameterized TaucLorentz dispersion model, the optical constants and surface roughness of ZnTiO3films related to the substrate temperature are systematically extracted by SE measurement. The surface roughness of the film measured from AFM agrees well with result extracted from SE, which proved that the established SE model is reasonable. With increasing substrate temperature, the refractive index decreases and the main factor in determining the refractive index was deduced to be the surface roughness related to the film packing density. The extinction coefficient of the samples is close to zero, but increases slightly with the increase of the substrate temperature, which is due to the enhancement of scattering effect in the crystalline ZnTiO3film.

Effects of Substrate Properties, Film Thickness and Evaporation Rate on the Surface Roughness of Ultra Thin Titanium Films

2007 ◽  
Author(s):  
Guoqiang Han ◽  
Zhuangde Jiang ◽  
Weixuan Jing ◽  
Mingzhi Zhu
Keyword(s):  
Surface Roughness ◽  
Film Thickness ◽  
Surface Properties ◽  
Evaporation Rate ◽  
Substrate Surface ◽  
Film Surface ◽  
Deposition Process ◽  
Electron Beam Evaporation ◽  
Titanium Film ◽  
Substrate Surfaces

Ultra thin (less than 50nm) titanium films with various thicknesses are systematically deposited on different substrates by electron-beam evaporation at various deposition rates in order to correlate flat titanium film surface roughness with deposition process parameters. In this paper, the influences of the substrate surface properties, film thickness and evaporation rate on surface roughness of flat ultra thin titanium films are clarified. In this study, distinct and abrupt steps on the film surface were fabricated by masks pasted on the substrate surfaces during the deposition process. The step can be scanned with stylus profilometer to reveal the height of the step (the thickness of the thin film). Ultra thin films with height 20–50 nm were routinely measured in this way. It is important to notice that ultra thin titanium films with different surface roughness but having the same film thickness can be obtained in a controllable way. Therefore, the control of substrate surface roughness, film thickness and evaporation process is essential to prepare ultra thin titanium films with desired surface properties in reproducible way for further biological and nanostructure investigations of these materials.

scholarly journals Comparative study of sculptured metallic thin films deposited by oblique angle deposition at different temperatures

2018 ◽  
Vol 9 ◽  
pp. 954-962 ◽  
Author(s):  
Susann Liedtke ◽  
Christoph Grüner ◽  
Jürgen W Gerlach ◽  
Bernd Rauschenbach
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Incidence Angle ◽  
Electron Beam Evaporation ◽  
Oblique Angle Deposition ◽  
Si Substrates ◽  
Wide Range ◽  
Oblique Deposition ◽  
Different Temperatures ◽  
The Impact

Metals with a wide range of melting points are deposited by electron beam evaporation under oblique deposition geometry on thermally oxidized Si substrates. During deposition the sample holder is cooled down to 77 K. It is observed that all obliquely deposited metals grow as tilted, high aspect ratio columns and hence with a similar morphology. A comparison of such columns with those deposited at room temperature (300 K) reveals that shadowing dominates the growth process for columns deposited at 77 K, while the impact of surface diffusion is significantly increased at elevated substrate temperatures. Furthermore, it is discussed how the incidence angle of the incoming particle flux and the substrate temperature affect the columnar tilt angles and the porosity of the sculptured thin films. Exemplarily for tilted Al columns deposited at 77 K and at 300 K, in-plane pole figure measurements are carried out. A tendency to form a biaxial texture as well as a change in the crystalline structure depending on the substrate temperature is found for those films.

The Study on Surface Morphology and Residual Stress of Al2O3 Film

2013 ◽  
Vol 275-277 ◽  
pp. 2006-2009
Author(s):  
Ying Dong Pu ◽  
Wu Tang ◽  
Yu Tong Yang
Keyword(s):  
Residual Stress ◽  
Surface Roughness ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Important Condition ◽  
Force Microscopy ◽  
Atom Force Microscopy ◽  
Film Microstructure

The aluminum oxide (Al2O3) films are grown on n-type Si-(100) substrate by electron beam evaporation at substrate temperature 500°C~800°C. The Al2O3film surface morphology is characterized by atom force microscopy (AFM) to evaluate the grain microstructure, and the residual stress was investigated by wafer stress analyzer. The results show that different substrate temperature is important condition to the properties of Al2O3film. Microstructure characterization indicates that the film surface at low substrate temperature is smoother, and the surface roughness of these Al2O3films is in the range 1-6 nm. The residual stress increases with increasing the substrate temperature, while the stress decreases after annealing in N2condition. It also can be concluded that the microstructure is correlated with residual stress.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Modeling the Layer-by-Layer Growth of HKUST-1 Metal-Organic Framework Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1631
Author(s):  
Qiang Zhang ◽  
Yohanes Pramudya ◽  
Wolfgang Wenzel ◽  
Christof Wöll
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Deposition Rate ◽  
Layer Growth ◽  
Coarse Grained ◽  
Structural Defects ◽  
Effect Of Temperature ◽  
Layer By Layer ◽  
Reactant Concentration ◽  
Metal Organic

Metal organic frameworks have emerged as an important new class of materials with many applications, such as sensing, gas separation, drug delivery. In many cases, their performance is limited by structural defects, including vacancies and domain boundaries. In the case of MOF thin films, surface roughness can also have a pronounced influence on MOF-based device properties. Presently, there is little systematic knowledge about optimal growth conditions with regard to optimal morphologies for specific applications. In this work, we simulate the layer-by-layer (LbL) growth of the HKUST-1 MOF as a function of temperature and reactant concentration using a coarse-grained model that permits detailed insights into the growth mechanism. This model helps to understand the morphological features of HKUST-1 grown under different conditions and can be used to predict and optimize the temperature for the purpose of controlling the crystal quality and yield. It was found that reactant concentration affects the mass deposition rate, while its effect on the crystallinity of the generated HKUST-1 film is less pronounced. In addition, the effect of temperature on the surface roughness of the film can be divided into three regimes. Temperatures in the range from 10 to 129 °C allow better control of surface roughness and film thickness, while film growth in the range of 129 to 182 °C is characterized by a lower mass deposition rate per cycle and rougher surfaces. Finally, for T larger than 182 °C, the film grows slower, but in a smooth fashion. Furthermore, the potential effect of temperature on the crystallinity of LbL-grown HKUST-1 was quantified. To obtain high crystallinity, the operating temperature should preferably not exceed 57 °C, with an optimum around 28 °C, which agrees with experimental observations.

Preparation and Characterization of Magnetic Force Microscopy Tips Coated with Nickel Films by e-Beam Evaporation

2018 ◽  
Vol 765 ◽  
pp. 3-7
Author(s):  
Badin Damrongsak ◽  
Samutchar Coomkaew ◽  
Karnt Saengkaew ◽  
Ittipon Cheowanish ◽  
Pongsakorn Jantaratana
Keyword(s):  
Film Thickness ◽  
Magnetic Force Microscopy ◽  
Magnetic Force ◽  
Film Surface ◽  
Electron Beam Evaporation ◽  
Film Stress ◽  
Nickel Films ◽  
Force Microscopy ◽  
Best Response ◽  
Cantilever Bending

In this work, magnetic force microscopy (MFM) tips coated with a nickel thin-film were prepared and characterized for applications in the measurement of the magnetic write field. Nickel films with various thicknesses in a range of 20 – 80 nm were deposited on silicon substrates and silicon atomic force microscopy (AFM) tips by electron beam evaporation. Film surface morphologies and magnetic properties of the coated nickel films were investigated by using AFM and vibrating sample magnetometry (VSM). The rms roughness increased with the film thickness and was in a range between 0.1 and 0.3 nm. VSM results revealed that the mean coercive field of the nickel films was 20 Oe and there was an increase in the coercivity as the film thickness increased. In addition, the prepared MFM tips were evaluated for the tip response to the dc and ac magnetic field generated from perpendicular write heads. It was found that the MFM tip had the best response to the write field when coated with 60 nm thick nickel film. The coating thickness over 60 nm was inapplicable due to the cantilever bending caused by the film stress.

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