scholarly journals Influence of annealing and optical aging on optical and structural properties of ZnO thin films obtained by SILAR method

2018 ◽  
Vol 57 (4) ◽  
Author(s):  
Çağlar Duman ◽  
Harun Güney
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Tin Oxide ◽  
Uv Light ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Layer Adsorption ◽  
Absorption Measurements

In this study, zinc oxide (ZnO) thin films are deposited on fluorine doped tin oxide (FTO) substrates by using a successive ionic layer adsorption and reaction (SILAR) method. One of the samples is not annealed and others are annealed at 200, 400 and 600 °C, and all the samples are aged under ultraviolet (UV) light for 19 h. These samples are used to investigate the effect of annealing and aging on the properties of ZnO. Structural properties of the ZnO thin films are examined with scanning electron microscopy (SEM) and X-ray diffraction (XRD). Photoluminescence, transmittance and absorption measurements are used to observe the optical properties of the films. In the literature, there is no study investigating the effect of aging on ZnO thin films deposited with the SILAR method, hence this study fills the gap in the literature.

scholarly journals Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Deepu Thomas ◽  
Sunil C. Vattappalam ◽  
Sunny Mathew ◽  
Simon Augustine
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Growth ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Good Crystallinity ◽  
Layer Adsorption

ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR) method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002) orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

Structural properties of low-temperature grown ZnO thin films determined by X-ray diffraction and X-ray absorption spectroscopy

2011 ◽  
Vol 519 (13) ◽  
pp. 4366-4370 ◽  
Author(s):  
Chung-Jong Yu ◽  
Nark-Eon Sung ◽  
Han-Koo Lee ◽  
Hyun-Joon Shin ◽  
Young-Duck Yun ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Structural Properties ◽  
Absorption Spectroscopy ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
X Ray Absorption

scholarly journals Study of Structural Properties of Annealed Cdo and Zno Thin Films

2017 ◽  
Vol 14 (2) ◽  
pp. 164-168
Author(s):  
Kishor Hurde ◽  
A. B. Lad
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Diffraction Data ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting ◽  
Resistance To Oxidation

The CdO and ZnO are n- type semiconductors are transparent conducting in nature, inexpensive, mechanically stable and highly resistance to oxidation. In the present work these films have been obtained from thermal annealing of chemically deposited CdS and ZnS thin films. The structural properties of chemically deposited CdS and ZnS thin films and thermally annealed CdO and ZnO thin films have been studied. From x-ray diffraction data it is observed that annealing of the thin films at a particular temperature enhance the structural properties.

Effect of R.F Power to the Properties of ZnO Thin Films Deposited by Magnetron Sputtering

2011 ◽  
Vol 364 ◽  
pp. 119-123 ◽  
Author(s):  
Nor Diyana Md Sin ◽  
M.Z. Musa ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Absorption Properties ◽  
X Ray ◽  
Atomic Force ◽  
Current Voltage ◽  
Pure Argon Atmosphere

The effect of radio frequency (R.F) power to the properties of zinc oxide (ZnO) thin films deposited by magnetron sputtering is presented. This project has been focused on electrical, optical and structural properties of ZnO thin films. The effect of variation R.F power at 100 watt ~ 400 watt on the ZnO thin films has been investigated. The thin films were examined using current-voltage (I-V) measurement, UV-Vis-NIR spectrophotometer, x-ray diffraction (XRD) and atomic force microscope (AFM). ZnO thin films were prepared at room temperature in pure argon atmosphere by a R.F magnetron sputtering using ZnO target. I-V measurement indicates that at 300 watt R.F power show the highest conductivity. All films have showed high UV absorption properties using UV-VIS spectrophotometer (JASCO 670). Highly oriented ZnO thin films [002] direction was obtained by using Rigaku Ultima IV. The root means square (rms) roughness for ZnO thin film were about (<2nm) was measured using AFM (Park System XE-100). Keywords-ZnO thin films, R.F power, electrical properties, optical properties, structural properties

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

2017 ◽  
Vol 73 ◽  
pp. 22-30
Author(s):  
Marimuthu Karunakaran ◽  
S. Maheswari ◽  
Kasinathan Kasirajan ◽  
Sivaji Dinesh Raj ◽  
Rathinam Chandramohan
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
Layer Growth ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Silar Method ◽  
X Ray ◽  
Glass Substrates ◽  
Mn Doped

The growth of highly textured Mn doped Zinc oxide (ZnO) thin films with a preferred (002) orientation has been reported by employing successive ionic layer growth by adsorption reaction (SILAR) using a sodium zincate bath on glass substrates has been reported. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM) measurement. The XRD analysis reveals that the films were polycrystalline. Morphology of the films was found to be uniform with smaller grains and exhibits a structure with porous. The calculated Band gap value was found to be 3.21 eV prepared at 15 mM MnSO4 concentration.

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

1988 ◽  
Vol 66 (5) ◽  
pp. 373-375 ◽  
Author(s):  
C. J. Arsenault ◽  
D. E. Brodie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Structural Properties ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Conductivity Activation Energy ◽  
X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

scholarly journals Chemically synthesized PbS Nano particulate thin films for a rapid NO2 gas sensor

2016 ◽  
Vol 34 (1) ◽  
pp. 204-211 ◽  
Author(s):  
Vishal V. Burungale ◽  
Rupesh S. Devan ◽  
Sachin A. Pawar ◽  
Namdev S. Harale ◽  
Vithoba L. Patil ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Gas Sensitivity ◽  
Silar Method ◽  
Layer Adsorption ◽  
Gas Sensing Properties

AbstractRapid NO2 gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO2 gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO2 gas was measured at different operating temperatures, from 50 to 200 °C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150 °C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO2 at 150 °C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.

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