The Study of CIGS Absorption Layer Grown by Two-Step Growth Method for Thin-Film Solar Cell

2013 ◽  
Vol 418 ◽  
pp. 238-241
Author(s):  
Li Zen Hsieh ◽  
Xi Ming Duan ◽  
Ming Jer Jeng

Two-step growth method was used for CuInGaSe2,(CIGS) absorption layer in this study. The layer was first deposited by thermal evaporator to use indium and gallium sauces at a vacuum of 5 × 10-6 torr and secondly, the deposited thin film was enclosed in a quartz cartridge for the first selenization. The second selenization process was coated by copper and then annealed again in a furnace. Finding best precursor for thin film solar cells was analyzed by scanning electron microscope (SEM), X-ray diffraction analyzer (XRD) and energy dispersive spectrometer (EDS).

2014 ◽  
Vol 1603 ◽  
Author(s):  
Mitsuki Nakashima ◽  
Toshiyuki Yamaguchi ◽  
Masanobu Izaki

ABSTRACTCu2ZnSnSe4 thin films were prepared by using the synthesized Cu2ZnSnSe4 ingot and Na2Se powder at various Na2Se/Cu2ZnSnSe4 mole ratio as evaporation materials for selenization process. From EPMA analysis, the composition was approximately constant even if the Na2Se/Cu2ZnSnSe4 mole ratio increased. X-ray diffraction studies revealed that the thin films had a kesterite Cu2ZnSnSe4 structure and the foreign phases disappeared with increasing the Na2Se/Cu2ZnSnSe4 mole ratio. The Na2Se addition enhanced to grow thin films having a close-packed structure and columnar grains. The values of Voc and Isc in Cu2ZnSnSe4 thin film solar cells increased with increasing the Na2Se/Cu2ZnSnSe4 mole ratio.


1992 ◽  
Vol 242 ◽  
Author(s):  
T. D. Moustakas ◽  
R. J. Molnar ◽  
T. Lei ◽  
G. Menon ◽  
C. R. Eddy

ABSTRACTGaN films were grown on c-plane (0001), a-plane (1120) and r-plane (1102) sapphire substrates by the ECR-assisted MBE method. The films were grown using a two-step growth process, in which a GaN buffer is grown first at relatively low temperatures and the rest of the film is grown at higher temperatures. RHEED studies indicate that this growth method promotes lateral growth and leads to films with smooth surface morphology. The epitaxial relationship to the substrate, the crystalline quality and the surface morphology were investigated by RHEED, X-ray diffraction and SEM studies.


2014 ◽  
Vol 70 (a1) ◽  
pp. C1774-C1774
Author(s):  
Daniel Többens ◽  
Kai Neldner ◽  
Laura Valle-Rios ◽  
Susan Schorr

The compound semiconductor Cu2ZnSnS4 (CZTS) is a promising alternative for absorber layers in thin film solar cells, as it has a nearly ideal band gap of about 1.5 eV, a high absorption coefficient for visible light, and contains only earth abundant and non-toxic elements. Besides chemical composition and phase purity, the efficiency of CZTS thin film solar cells depends strongly on the concentration of Cu- and Zn-antisites and copper vacancies in the kesterite-type structure. However, Cu(I) and Zn(II) are isoelectric and thus cannot be distinguished by conventional X-ray diffraction. In prior work we determined Cu-Zn-distribution successfully from neutron scattering [1]. Here we present experiments utilizing anomalous X-ray diffraction on the K-edges of Cu and Zn. Anomalous scattering coefficients are heavily wavelength-dependent close to the absorption edges of the respective element. This is utilized for contrast enhancement. Usage of multiple wavelengths above, below and between the absorption edges of Cu and Zn ensures significant overdetermination, so that the Cu-, Zn-, and vacancy concentrations can be refined reliably for the independent crystallographic sites. Experiments were conducted at the diffraction end station of the KMC-2 beamline [2] at BESSY (Berlin, Germany). KMC-2 provides X-ray radiation with both very stable energies and intensities. The accessible energy range of 4 – 14 keV is ideally suited for the K-edges of Cu (8979 eV) and Zn (9659 eV). A 6-circle goniometer in psi-geometry allows both powder and grazing incidence diffraction, so that bulk samples and thin films can be measured. The instrument can be equipped with either a scintillation point detector (Cyberstar) or an area detector (Bruker Vantec), allowing to optimize resolution and intensity to the needs of the experiment.


1994 ◽  
Vol 341 ◽  
Author(s):  
B. K. Moon ◽  
H. Ishiwara

AbstractCrystalline strontium titanate (SrTiO3:STO) films were grown on Si(111) and Si(100) substrates using thin SrF2 and CaF2 buffer layers by two-step growth method. In all cases, fluoride buffer layers were effective in growing STO films on Si substrates, which is probably due to that fluoride buffer layers have excellent crystallinity and they can prevent formation of amorphous SiO2 layers on Si substrates at the initial stage of the STO deposition. It was found from X-ray diffraction and pole-figure measurements that (110)-oriented STO crystallites with three different positions to the substrate were grown on Si(111) substrates for both SrF2 and CaF2 buffer layers. In constrast, (100)-oriented STO films with 12-fold symmetry were grown on a SrF2/Si(100), and mixed (110)- and (100)-oriented STO crystallites were grown on a CaF2/Si(100) structure. It was concluded from these results that better crystallinity of STO films can be obtained on the SrF2 buffer layer in case of Si(111) and on the CaF2 buffer layer in case of Si(100). It was also found from I-V and C-V analyses that the STO films have good insulating and dielectric characteristics. For a SrTiO3 film on SrF2/Si(111) structure, the best values of breakdown field (at l.μA/cm2), resistivity (at IMV/cm) and dielectric constant were 2.3MV/cm, 8.2 × 1012 Ωcm and 72, respectively.


1987 ◽  
Vol 91 ◽  
Author(s):  
Tetsuo Soga ◽  
Toru Imori ◽  
Masayoshi Umeno

ABSTRACTThe stress and strain of GaAs on Si grown by using strained superlattice intermediate layers and a two-step growth method are characterized by the photoluminescence, X-ray diffraction and the curvature radius. The strain of GaAs grown using strained superlattice intermediate layers is smaller than that grown by the two-step growth method.


2015 ◽  
Vol 713-715 ◽  
pp. 2924-2927 ◽  
Author(s):  
Jian Li ◽  
Long Yan ◽  
Hui Jin Liu

A simple solvothermal route has been used to prepare SnSe nanowires using SnCl4·4H2O and Selenium powder. The phase, structure, morphology, and optical properties of the as-synthesized products were characterized by powder X-ray diffraction (XRD), scan electron microscopy (SEM), Raman spectroscope (RS) and UV-visible spectrophotometer (UV-vis). The results showed that SnSe nanowires were prepared at 200°C for 24 h and in the length of 150-200μm, and width of 1-1.5μm. The band gap of SnSe nanowires was about 1.67 eV, which was close to the optimum band gap of thin film solar cells.


2015 ◽  
Vol 25 (2) ◽  
pp. 133
Author(s):  
Vuong Son ◽  
Nguyen Duc Chien ◽  
Truong Thanh Toan ◽  
Doan Tuan Anh ◽  
Mai Anh Tuan ◽  
...  

In this paper, we report the development of the spray pyrolysis technique for preparing different nano-structure materials toward the application in thin film solar cells. The spray pyrolysis system can heat up the substrate to 6000C with less than 0.01% full scale. The ramping rate can be set to 100C per minute. The effective coating area can be up to 100 x 100 mm2. Using this technique, the thickness and roughness of the films can be controlled. The obtained morphology, the microstructure of the thin-films, given by scanning electron microscope, X ray diffraction…showed that the system is suitable for deposition of different layers of the dye sensitized solar cell.


2011 ◽  
Vol 130-134 ◽  
pp. 895-899
Author(s):  
Lei Han ◽  
Zhe Sheng Chen ◽  
Lei Wan ◽  
Jin Zhang Xu

The Cu2ZnSnSe4 (CZTSe) thin films were prepared by co-electroplating Cu-Zn-Sn precursors followed by selenization at different substrate temperatures. The effect of substrate temperatures on the morphologies and structures of CZTSe films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum respectively. The results revealed that the impurity phases in CZTSe thin films such as CuSe and SnSe disappeared when the substrate temperatures were increased. The surface morphologies of CZTSe thin films were also strongly dependent on the substrate temperature treatment in the selenization process though the selenium temperature was kept at 340°C.


2013 ◽  
Vol 1538 ◽  
pp. 107-114
Author(s):  
Xianzhong Lin ◽  
Jaison Kavalakkatt ◽  
Martha Ch. Lux-Steiner ◽  
Ahmed Ennaoui

ABSTRACTQuaternary semiconductors, Cu2ZnSnS4 and Cu2ZnSnSe4 which contain only earth-abundant elements, have been considered as the alternative absorber layers to Cu(In,Ga)Se2 (CIGS) for thin film solar cells although CIGS-based solar cells have achieved efficiencies over 20 %. In this work we report an air-stable route for preparation of Cu2ZnSn(Sx,Se(1-x))4 (CZTSSe) thin film absorbers by a solution process based on the binary and ternary chalcogenide nanoparticle precursors dispersed in organic solvents. The CZTSSe absorber layers were achieved by spin coating of the ink precursors followed by annealing under Ar/Se atmosphere at temperature up to 580°C. We have investigated the influence of the annealing temperature on the reduction or elimination of detrimental secondary phases. X-ray diffraction combined with Raman spectroscopy was utilized to better identify the secondary phases existing in the absorber layers. Solar cells were completed by chemical bath deposited CdS buffer layer followed by sputtered i-ZnO/ZnO: Al bi-layers and evaporated Ni/Al grids.


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