Effect of Substrate Temperature on the Preparation of Cu2ZnSnSe4 Thin Films

2011 ◽  
Vol 130-134 ◽  
pp. 895-899
Author(s):  
Lei Han ◽  
Zhe Sheng Chen ◽  
Lei Wan ◽  
Jin Zhang Xu
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Energy Dispersive Spectrometer ◽  
Temperature Treatment ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Spectrum ◽  
Surface Morphologies ◽  
Substrate Temperatures ◽  
Selenization Process

The Cu2ZnSnSe4 (CZTSe) thin films were prepared by co-electroplating Cu-Zn-Sn precursors followed by selenization at different substrate temperatures. The effect of substrate temperatures on the morphologies and structures of CZTSe films were characterized using scanning electron microscopy (SEM), energy dispersive spectrometer (EDS), X-ray diffraction (XRD) and Raman scattering spectrum respectively. The results revealed that the impurity phases in CZTSe thin films such as CuSe and SnSe disappeared when the substrate temperatures were increased. The surface morphologies of CZTSe thin films were also strongly dependent on the substrate temperature treatment in the selenization process though the selenium temperature was kept at 340°C.

Effect of Substrate Temperature on the Electrochromic Properties of Cobalt Hydroxide Thin Films Prepared by Reactive Sputtering

2011 ◽  
Vol 1328 ◽  
Author(s):  
KyoungMoo Lee ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Hidenobu Itoh
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Indium Tin Oxide ◽  
Large Change ◽  
Amorphous Structure ◽  
Cobalt Hydroxide ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Substrate Temperatures

ABSTRACTCobalt hydroxide thin films with a thickness of 100 nm were deposited onto glass, Si and indium tin oxide (ITO)-coated glass substrates by reactively sputtering a Co target in H2O gas. The substrate temperature was varied from -20 to +200°C. The EC performance of the films was investigated in 0.1 M KOH aqueous solution. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy of the samples indicated that Co3O4 films were formed at substrate temperatures above 100°C, and amorphous CoOOH films were deposited in the range from 10 to -20°C. A large change in transmittance of approximately 26% and high EC coloration efficiency of 47 cm2/C were obtained at a wavelength of 600 nm for the CoOOH thin film deposited at -20°C. The good EC performance of the CoOOH films is attributed to the low film density and amorphous structure.

Effects of Substrate Temperature on the Properties of Cu(In,Ga)Se2 Thin Films Prepared by Sputtering from a Quaternary Target

2014 ◽  
Vol 1061-1062 ◽  
pp. 209-214 ◽  
Author(s):  
Zi Yue Yang ◽  
Li Dong Wang ◽  
Rui Xuan Song ◽  
Dong Xing Zhang ◽  
Wei Dong Fei
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Carrier Mobility ◽  
Hall Effect Measurement ◽  
Chalcopyrite Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Higher Carrier Mobility ◽  
Substrate Temperatures

Cu (In,Ga)Se2(CIGS) thin films were prepared by direct magnetron sputtering CIGS quaternary target at the substrate temperature varying from room temperature (RT) to 300 °C. The effects of substrate temperature on the structural and electrical properties of CIGS films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray (EDX) and Hall effect measurement. The CIGS thin films with a chalcopyrite structure were obtained between 100 and 300 °C and the crystallinity of films were enhanced with the increase of the substrate temperature from 100 to 300 °C. The film compositions were consisted with the target when the substrate temperatures were between RT and 200 °C, however, it deviated from the stoichiometry of the target when the substrate temperature was 300 °C. The CIGS films deposited at 200 °C had the higher carrier mobility of 3.522 cm2/Vs.

Heteroepitaxial Growth of Epitaxial C60-Thin Films on Mica(001)

1994 ◽  
Vol 359 ◽  
Author(s):  
S. Henke ◽  
K.H. Thürer ◽  
S. Geier ◽  
B. Rauschenbach ◽  
B. Stritzker
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Substrate Temperatures

ABSTRACTOn mica(001) thin C60-films are deposited by thermal evaporation at substrate temperatures from room temperature up to 225°C. The dependence of the structure and the epitaxial alignment of the thin C60-films on mica(001) on the substrate temperature and the film thickness up to 1.3 μm at a well-defined deposition rate (0.008 nm/s) is investigated by atomic force microscopy and X-ray diffraction. The shape and the size of the C60-islands, which have an influence on the film quality at larger film thicknesses, are sensitively dependent on the substrate temperature. At a film thickness of 200 nm the increase of the substrate temperature up to 225°C leads to smooth, completely coalesced epitaxial C60-thin films characterized by a roughness smaller than 1.5 nm, a mosaic spread Δω of 0.1° and an azimuthal alignment ΔΦ of 0.45°.

Influence of Substrate Temperature on Structure and Optical Property of Cu3N Thin Films

2010 ◽  
Vol 152-153 ◽  
pp. 218-221
Author(s):  
Jian Rong Xiao ◽  
Ai Hua Jiang ◽  
Ye Guang Liang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Optical Transmission ◽  
X Ray Diffraction ◽  
Compact Structure ◽  
Copper Nitride ◽  
X Ray ◽  
Atomic Force ◽  
Influence Of Substrate ◽  
Substrate Temperatures

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at various substrate temperatures. The surface morphology and crystal structure of the thin films were characterized by atomic force microscope (AFM) and X-ray diffraction (XRD), respectively. The AFM images demonstrate that the films have a compact structure. The XRD test indicates that growth orientation of the thin films prefers the (111) or (100) at different substrate temperature. The optical transmission properties of the thin films were obtained by an ultraviolet visible spectrometer. The optical band gap of the thin films decreases with increasing substrate temperature.

Effects of Microstructure on Photoluminescence of SrS:Eu2+,SM3+ thin Films

1993 ◽  
Vol 301 ◽  
Author(s):  
Susan Z. Hua ◽  
L. Salamanca-Riba ◽  
M. Wuttig ◽  
P. K. Soltani
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Growth Rates ◽  
Growth Conditions ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Substrate Temperatures ◽  
The Eu

ABSTRACTThe microstructure and its effects on the photoluminescence properties of SrS:Eu2+,Sm3+ thin films grown with different conditions were studied by transmission electron microscopy, x-ray diffraction and photoluminescence techniques. The SrS:Eu2+,Sm3+ thin films were prepared by e-beam evaporation at different substrate temperatures and growth rates. Both of these growth conditions affect the crystallinity of the thin films. The Sm3+ emission is stronger in the films grown at higher growth rates and at an optimum substrate temperature. We believe that the stronger Sm3+ emission is due to the higher population of Sm trivalent charge states in the films. Further increase of the substrate temperature increases the grain size in the films, but has no significant effect on the PL emission properties. In contrast, the Eu2+ emission is less sensitive to growth conditions.

Effect of Substrate Temperature on the Structural and Electrochromic Properties of Mo Doped WO3 Thin Films

2014 ◽  
Vol 781 ◽  
pp. 95-106 ◽  
Author(s):  
V. Madhavi ◽  
P. Kondaiah ◽  
S. Uthanna
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Substrate Temperature ◽  
Electrochromic Property ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrochromic Properties ◽  
Substrate Temperatures ◽  
Scanning Electron

Thin films of Mo (1.3 at.%) doped WO3 films were deposited on glass and ITO coated glass substrates held at substrate temperatures in the range 473 673 K by RF magnetron sputtering technique. The effect of substrate temperature on the structural and morphological, and electrochromic properties of the deposited films were investigated by X-ray diffraction, scanning electron microscope, Raman spectroscope and with electrochemical cell. X-ray diffraction profiles showed that the films formed at substrate temperature of 473 K consisted of weak (020) reflection related to the orthorhombic phase of WO3 in the amorphous matrix. The films formed at substrate temperatures 473 K were of polycrystalline in nature. The crystallite size of the films increased from 12 to 43 nm with increase of substrate temperature from 473 to 673 K. The scanning electron microscope images of the films formed at 473 K showed the leaf like structure with grain size of 1.2 μm. When substrate temperature increased to 573 K the size of the grains enhanced to 2.4 μm. Raman spectra of the films confirmed the presence of characteristic vibration modes of W = O, W - O - W and O - W - O. The optical band gap of the films increased with increase of substrate temperature. The electrochromic property, that is the color efficiency increased from 42.5 to 50.5 cm2/C with the increase of substrate temperature from 473 to 673 K respectively. The structural and electrochromic properties of the Mo doped WO3 films will be correlated with the substrate temperature maintained during growth of the films.

scholarly journals The structure and optical properties of CdSe:Cu Thin Films

2009 ◽  
Vol 6 (1) ◽  
pp. 141-149
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Absorption Coefficient ◽  
Substrate Temperature ◽  
Energy Gap ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Optical Energy Gap ◽  
X Ray ◽  
Substrate Temperatures

A polycrystalline CdSe thin films doped with (5wt%) of Cu was fabricated using vacuum evaporation technique in the substrate temperature range(Ts=RT-250)oC on glass substrates of the thickness(0.8?m). The structure of these films are determined by X-ray diffraction (XRD). The X-ray diffraction studies shows that the structure is polycrystalline with hexagonal structure, and there are strong peaks at the direction (200) at (Ts=RT-150) oC, while at higher substrate temperature(Ts=150-250) oC the structure is single crystal. The optical properties as a function of Ts were studied. The absorption, transmission, and reflection has been studied, The optical energy gap (Eg)increases with increase of substrate temperature from (1.65-1.84)eV due to improvement in the structure. The amorphousity of the films decreases with increasing Ts. The films have direct energy gap and the absorption edge was shift slightly towards smaller wavelength for CdSe:Cu thin film with increase of substrate temperature.it was found that the absorption coefficient was decreased with increasing of substrate temperature due to increases the value of(Eg). The CdSe:Cu films showed absorption coefficient in the range (0.94 x104-0.42x104)cm-1at Ts=RT-250 oC. Also the density of state decreases with increasing of substrate temperatures from (0.20-0.07)eV, it is possibly due to the recrystallization by the heating substrate temperatures.. Also the extinction coefficient, refractive index and dielectric constant have been studied.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

MICROSTRUCTURE AND BLUE PHOTOLUMINESCENCE OF HYDROGENATED SILICON CARBONITRIDE THIN FILMS

2019 ◽  
Vol 26 (04) ◽  
pp. 1850177 ◽  
Author(s):  
YINQIAO PENG ◽  
JICHENG ZHOU ◽  
GUIBIN LEI ◽  
YUANJU GAN ◽  
YUEFENG CHEN
Keyword(s):  
Thin Films ◽  
Network Structure ◽  
Energy Dispersive Spectrometer ◽  
Silicon Carbonitride ◽  
X Ray Diffraction ◽  
Hydrogenated Silicon ◽  
X Ray ◽  
Atomic Force ◽  
Scanning Electron ◽  
Blue Photoluminescence

Hydrogenated silicon carbonitride (SiCN:H) thin films were deposited by sputtering of silicon carbide target in hydrogen-doped argon and nitrogen atmospheres. The properties of the SiCN:H films were analyzed by scanning electron microscopy with energy dispersive spectrometer, atomic force microscope, Fourier transform infrared spectroscopy, X-ray diffraction and fluorescence spectrophotometer. No distinct crystal was formed in the SiCN:H films as-deposited and annealed at 600∘C and 800∘C. The SiCN:H films were mainly composed of Si–N, Si–C, Si–O, C–C, C–N, C[Formula: see text]N, N–Hn bonds and SiCxNy network structure. The strong blue photoluminescence observed from the SiCN:H film annealed at 600∘C was attributed to SiCxNy network structure.

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