The Morphology in Film of Polystyrene-b-Polylactide after Temperature Annealing Process

2015 ◽  
Vol 1095 ◽  
pp. 647-650
Author(s):  
Ting Chen ◽  
Jia Nan Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Separation ◽  
Block Copolymer ◽  
Annealing Time ◽  
Self Assembly ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Temperature Gradients ◽  
Si Substrates

Polystyrene-b-Polylactide (PS-b-PLA) was dissolved in chlorobenzene, and the development of the micro-phase separation morphology in asymmetric PS-b-PLA thin films was investigated by AFM. The thin films were prepared by spinning casting at the speed of 6000 r/min for 60s on Si substrates. We get different morphologies of PS-b-PLA thin film by changing the annealing temperature from 150 °C to 170 °C. In addition, the annealing time influences the morphology of the film. When the annealing time increased from 2 hours to 15 hours and 30 hours, the morphology transformed from parallel to perpendicular to the substrate. By applying temperature gradients, we can control the morphology and orientation of the Block copolymer film self-assembly.

Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

2012 ◽  
Vol 252 ◽  
pp. 211-215
Author(s):  
Xiao Hua Sun ◽  
Shuang Hou ◽  
Zhi Meng Luo ◽  
Cai Hua Huang ◽  
Zong Zhi Hu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Loss ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Annealing Process ◽  
Si Substrates ◽  
Tunable Properties

Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.

Investigation on etching selectivity and microstructure of Ag doped Sb2Te thin film for dry lithography

2021 ◽  
Author(s):  
Wei Tao ◽  
Wancheng Shen ◽  
Xingwang Chen ◽  
Lei Chen ◽  
Jing Hu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Separation ◽  
Raman Spectra ◽  
Laser Exposure ◽  
Si Substrates ◽  
Heat Mode ◽  
Etching Selectivity ◽  
Mixed Gases

Abstract Dry lithography is a promising micro/nanomanufacturing method owing to its advantages of solution-free, absence of undercut and resist swelling. However, heat-mode resist suitable for dry lithography is less reported. This work reported Ag doped Sb2Te thin film as heat-mode resist, and its etching selectivity and microstructures are investigated in detail. It is found that Ag1.44Sb2.19Te thin film possesses high etching selectivity in CHF3/O2 mixed gases and can act as a heat-mode resist. In order to elucidate the mechanism of high etching selectivity, the microstructures of the Ag doped Sb2Te thin films are analyzed according to XRD, Raman spectra, XPS, and TEM methods. Results implies that the etching selectivity is attributed to the phase separation of Ag1.44Sb2.19Te film and formation of Sb phase after laser exposure, leading to the reduction of etching resistance in CHF3/O2 mixed gases. Besides, the pattern transfers from Ag1.44Sb2.19Te to SiO2 and Si substrates are achieved successfully and the etching selectivity of Si or SiO2 to Ag1.44Sb2.19Te are both higher than 2:1. This work may provide a useful guide for the research of dry lithography without wet development.

scholarly journals Effect of Annealing Process on the Dielectric and Tunable Properties of (Bi1.5Zn0.5)(Nb0.5Ti1.5)O7(BZNT) Thin Film

2021 ◽  
Vol 2133 (1) ◽  
pp. 012009
Author(s):  
Yijian Ma ◽  
Shuang Hou ◽  
Linfeng Lv ◽  
Jiatian Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Initial Temperature ◽  
Film Formation ◽  
Rf Magnetron Sputtering ◽  
Annealing Process ◽  
Si Substrates ◽  
Structure Surface

Abstract Bi1.5Zn0.5Nb0.5Ti1.5O7 (BZNT) thin films were deposited on Pt/Ti/SiO2/Si substrates by radio frequency (rf) magnetron sputtering. In this paper, by studying the phase structure, surface morphology, and dielectric properties of BZNT films, it is found that by increasing the initial temperature in the annealing process, the film formation quality, internal stress and dielectric properties of the film can be improved. and the best performance of the BZNT film is obtained under the annealing process at the initial temperature of 500°C. The tuning amount (Tu), Dielectric loss (Loss) and quality factor (FOM) are: 13.55 percent, 0.00298 and 45.46, respectively.

scholarly journals Post-Sputtering Heat Treatments of Molybdenum on Silicon Wafer

2018 ◽  
Vol 8 (9) ◽  
pp. 1692 ◽  
Author(s):  
Xuguang Jia ◽  
Ziyun Lin ◽  
Terry Chien-Jen Yang ◽  
Binesh Puthen-Veettil ◽  
Lingfeng Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Annealing Temperature ◽  
Heat Treatments ◽  
Fused Silica ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
Crystalline Orientation

This paper investigated the property evolutions of Mo thin films that were subjected to post-sputtering heat treatments from 700 °C to 1100 °C. It was found that, after annealing, the use of Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on fused silica substrates. The recrystallization of the Mo thin film was found to start at 900 °C, which led to rearrangements of the preferred crystalline orientation and enhancement of grain size when the annealing temperature was further increased. The electrical conductivity of the Mo thin films was majorly affected by the increase of Mo crystallite size as the annealing temperature was increased. Overall, the improvement of material sustainability and compatibility in the high temperature annealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical structured Si QDs solar cells.

Annealing Process Dependence of the Self-Assembly of Rod–Coil Block Copolymer Thin Films

2021 ◽  
Vol 54 (4) ◽  
pp. 1657-1664
Author(s):  
Ling-Ying Shi ◽  
Chengxiao Yin ◽  
Bo Zhou ◽  
Wei Xia ◽  
Lin Weng ◽  
...  
Keyword(s):  
Thin Films ◽  
Block Copolymer ◽  
Self Assembly ◽  
Annealing Process ◽  
The Self

HARD TEMPLATES FOR FABRICATION OF NANOSTRUCTURED FILMS

NANO ◽  
2010 ◽  
Vol 05 (02) ◽  
pp. 75-87 ◽  
Author(s):  
KI-RIM LEE ◽  
YOUNG-UK KWON
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Block Copolymer ◽  
Self Assembly ◽  
The Other ◽  
Anodized Aluminum ◽  
Anodized Aluminum Oxide ◽  
Nanostructured Films ◽  
Nanostructured Thin Film ◽  
Mesoporous Thin Films

In this paper, we review on classes of materials that can be used as hard templates to fabricate nanostructured thin film materials. The hard templates discussed are anodized aluminum oxide (AAO), block copolymer (BC) self-assembly films, and mesoporous thin films (MTFs), with emphasis on MTFs since it has not been reviewed for the application as templates while the first two materials have been reviewed previously by others. Each one of the three classes of templates has advantages and drawbacks. Considering the pore dimensions available by each one of them, the three templates are complementary to one another. Some of the features of MTFs appear to be advantageous over the other types of templates. All and all, these three appear to have complementing features to cover the various aspects required for templates to synthesize nanostructured thin films.

Preparation and Electrical Properties of Mn-Co-Ni-O Thin-Film for NTC Thermistors Application

2013 ◽  
Vol 745-746 ◽  
pp. 599-604 ◽  
Author(s):  
Xue Ying Chen ◽  
Lei Wang ◽  
Jin Bao Xu ◽  
Liang Bian ◽  
Bo Gao
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Spinel Structure ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Si Substrates ◽  
Structure Observation ◽  
Metal Organic

Mn-Co-Ni-O (Mn:Co:Ni=1.74:0.72:0.54, MCN) thin films with single cubic spinel structure were prepared on Si substrates by metal organic solution deposition (MOSD) method at different annealing temperatures. The effects of annealing temperature on the phase component, crystalline microstructure, surface morphology and electrical properties of the MCN thin films were studied. According to the results of x-ray diffraction pattern, the MCN thin film annealed at 650 had spinel structure. Observation with field emission scanning electron microscope (FE-SEM) on the MCN thin films showed that the grain size increased with increasing annealing temperature. The resistance measured at room-temperature was 18.143, 12.457, 2.435 and 3.141MΩ for the MCN thin films annealed at 650, 700, 750 and 800, respectively. The values of thermistor constant (B30/85) and activation energy (Ea) were in the range of 3260-4840K and 0.28-0.42eV, respectively.

STRUCTURE CONTROL AND FERROELECTRIC PROPERTIES OF SrBi4Ti4O15 THIN FILMS ON Si SUBSTRATES COATED BY (100)- AND (110)-ORIENTED LaNiO3 ELECTRODES

2007 ◽  
Vol 14 (03) ◽  
pp. 435-438
Author(s):  
PILONG WANG ◽  
GUANGDA HU ◽  
YANXIA DING ◽  
SUHUA FAN
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Volume Fraction ◽  
Ferroelectric Properties ◽  
Epitaxial Relationship ◽  
Structure Control ◽  
Si Substrates

SrBi 4 Ti 4 O 15 ( SBTi ) thin films were prepared on (100)- and (110)-oriented LaNiO 3( LNO ) electrodes by a metalorgranic decomposition (MOD) technique at an annealing temperature of 650°C. c-axis-oriented SBTi thin film with volume fraction of 0.89 can be formed on a (100)-oriented LNO film due to the epitaxial relationship between c-axis-oriented SBTi and LNO (100). In contrast, SBTi film deposited on LNO (110) shows random orientations with strong (119) and (200) peaks. The remanent polarization (Pr) and coercive field (Ec) of the random oriented SBTi film were 18.1 μC/cm2 and 70 kV/cm, respectively. This suggests that (110)-oriented LNO electrode is a better choice for obtaining SBTi films with higher volume fraction of a(b)-axis-orientated grains.

scholarly journals Study the Structural Properties and Surface Morphology of CdO Thin Films Prepared by Chemical Spray pyrolysis

2020 ◽  
Vol 12 (02) ◽  
pp. 1-11
Author(s):  
Karrar Mahdi Saleh ◽  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Structural Properties ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Crystal Defects ◽  
Average Grain Size ◽  
Chemical Spray ◽  
Cdo Thin Films

CdO films were prepared using a chemical spray paralysis (CSP) method on the glass substrate at a temperature of 350 ° C and thickness (260 ± 15 nm), and study the effect annealing time (0, 1, 1.5, 2, 2.5) h at annealing temperature 450 °C on structural properties. The X-ray diffraction pattern the results showed that all CdO thin films have a polycrystalline structure and a prevalent growth in the direction (111), and the average grain size (G) in this direction ranges (29.80 - 33.23) nm. It generally increases in value while the agitation values, extraction density, number of crystals decrease by increasing the annealing time (0-2)h at annealing temperature 450 ° C of thin films. From the resulted of the atomic force microscope (AFM), the surface roughness, medium square root (RMS) and average grain size increase with the increasing of the annealing time (0-2) h, at annealing temperature 450 ° C. The thin film with annealing time 2.5 h at annealing temperature 450 °C . We note a slight decrease in the values of the coefficients ( XRD and AFM) Due to the changes in the crystal structure of thin films and beginning of cracks and crystal defects generated on the surface of the thin film during the annealing process. It has been observed in practice that the increase in the annealing time to 3 h at annealing temperature 450 ° C. led to the separation of the thin film from the substrates.

Microstructural Rearrangement in PZT(52/48) Thin Film Prepared By Reactive Cosputtering on Pt on Si(100)

1992 ◽  
Vol 280 ◽  
Author(s):  
Woong Kil Choo ◽  
Kwang Young Kim ◽  
Hyo Jin Kim ◽  
Sung Tae Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Experimental Conditions ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Cubic Structure

ABSTRACTThe experimental conditions which render the exact stoichiometry of PZT(52/48) thin films deposited on Pt thin film on Si(100) by reactive cosputtering have been investigated. As-deposited PZT is amorphous containing α-PbO2 microcrystallites. As annealing temperature increases, the amorphous PZT films crystallize into pyrochlore and perovskite with pseudo-cubic structure in sequence. The perovskite PZT annealed above 750 °C evolves into a phase of morphotropic phase boundary. In the perovskite PZT thin films, the leakage current increases with annealing time. Also, the dielectric constant increases with film thickness and annealing temperature, which is discussed in conjunction with PZT/Pt interfacial morphology.

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