scholarly journals Study the Structural Properties and Surface Morphology of CdO Thin Films Prepared by Chemical Spray pyrolysis

2020 ◽  
Vol 12 (02) ◽  
pp. 1-11
Author(s):  
Karrar Mahdi Saleh ◽  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Structural Properties ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Crystal Defects ◽  
Average Grain Size ◽  
Chemical Spray ◽  
Cdo Thin Films

CdO films were prepared using a chemical spray paralysis (CSP) method on the glass substrate at a temperature of 350 ° C and thickness (260 ± 15 nm), and study the effect annealing time (0, 1, 1.5, 2, 2.5) h at annealing temperature 450 °C on structural properties. The X-ray diffraction pattern the results showed that all CdO thin films have a polycrystalline structure and a prevalent growth in the direction (111), and the average grain size (G) in this direction ranges (29.80 - 33.23) nm. It generally increases in value while the agitation values, extraction density, number of crystals decrease by increasing the annealing time (0-2)h at annealing temperature 450 ° C of thin films. From the resulted of the atomic force microscope (AFM), the surface roughness, medium square root (RMS) and average grain size increase with the increasing of the annealing time (0-2) h, at annealing temperature 450 ° C. The thin film with annealing time 2.5 h at annealing temperature 450 °C . We note a slight decrease in the values of the coefficients ( XRD and AFM) Due to the changes in the crystal structure of thin films and beginning of cracks and crystal defects generated on the surface of the thin film during the annealing process. It has been observed in practice that the increase in the annealing time to 3 h at annealing temperature 450 ° C. led to the separation of the thin film from the substrates.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

Structural Analysis of Rf Sputtered Er Doped Ta2O5 Films

2010 ◽  
Vol 459 ◽  
pp. 32-37 ◽  
Author(s):  
Jaspal Parganram Bange ◽  
Mayank Kumar Singh ◽  
Kazusa Kano ◽  
Kenta Miura ◽  
Osamu Hanaizumi
Keyword(s):  
Thin Films ◽  
Structural Analysis ◽  
Structural Properties ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Hexagonal Phase ◽  
Rf Sputtering ◽  
Amorphous Nature ◽  
Crystalline Nature ◽  
Er Doped

Thin films of Er-doped Ta2O5 have been synthesized by RF sputtering. The influence of annealing temperature, number of Er tablets and annealing time on the structural properties of grown films, has been studied. The samples annealed bellow 800°C show amorphous nature. However, the sample annealed at 800°C and above shows crystalline nature of the film with β–Ta2O5 (orthorhombic) and δ–Ta2O5 (hexagonal) phase. The crystalline structure of the film is disturbed with the increase in Er concentration.

Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

2012 ◽  
Vol 252 ◽  
pp. 211-215
Author(s):  
Xiao Hua Sun ◽  
Shuang Hou ◽  
Zhi Meng Luo ◽  
Cai Hua Huang ◽  
Zong Zhi Hu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Loss ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Annealing Process ◽  
Si Substrates ◽  
Tunable Properties

Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.

scholarly journals Post-Sputtering Heat Treatments of Molybdenum on Silicon Wafer

2018 ◽  
Vol 8 (9) ◽  
pp. 1692 ◽  
Author(s):  
Xuguang Jia ◽  
Ziyun Lin ◽  
Terry Chien-Jen Yang ◽  
Binesh Puthen-Veettil ◽  
Lingfeng Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Annealing Temperature ◽  
Heat Treatments ◽  
Fused Silica ◽  
Annealing Process ◽  
High Temperature Annealing ◽  
Crystalline Orientation

This paper investigated the property evolutions of Mo thin films that were subjected to post-sputtering heat treatments from 700 °C to 1100 °C. It was found that, after annealing, the use of Si wafers eliminated crack formations found in previously reported Mo thin films sputtered on fused silica substrates. The recrystallization of the Mo thin film was found to start at 900 °C, which led to rearrangements of the preferred crystalline orientation and enhancement of grain size when the annealing temperature was further increased. The electrical conductivity of the Mo thin films was majorly affected by the increase of Mo crystallite size as the annealing temperature was increased. Overall, the improvement of material sustainability and compatibility in the high temperature annealing process has made it positive to implement a Mo-Si contact-substrate scheme for vertical structured Si QDs solar cells.

CRITICAL SURFACE TENSION, CRITICAL SURFACE ENERGY AND PARACHOR OF MnSO3 THIN FILM

2016 ◽  
Vol 23 (03) ◽  
pp. 1650009 ◽  
Author(s):  
İ. A. KARIPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Tension ◽  
Grain Size ◽  
Surface Energy ◽  
Film Thickness ◽  
Critical Surface ◽  
Critical Surface Tension ◽  
Average Grain Size ◽  
The Relationship

This study examines the critical surface energy of manganese sulfite (MnSO[Formula: see text] crystalline thin film, produced via chemical bath deposition (CBD) on substrates. In addition, parachor, which is an important parameter of chemical physics, and its relationship with grain size, film thickness, etc., has been investigated for thin films. For this purpose, MnSO3 thin films were deposited at room temperature using different deposition times. Structural properties of the films, such as film thickness and average grain size, were examined using X-ray diffraction; film thickness and surface properties were measured by and atomic force microscope; and critical surface tension of MnSO3 thin films was measured with Optical Tensiometer and calculated using Zisman method. The results showed that critical surface tension and parachor of the films have varied with average grain size and film thickness. Critical surface tension was calculated as 32.97, 24.55, 21.03 and 12.76[Formula: see text]mN/m for 14.66, 30.84, 37.07 and 44.56[Formula: see text]nm grain sizes, respectively. Film thickness and average grain size have been increased with the deposition time and they were found to be negatively correlated with surface tension and parachor. The relationship between film thickness and parachor was found as [Formula: see text] whereas the relationship between average grain size and parachor was found as [Formula: see text] We also showed the relationships between parachor and some thin films parameters.

scholarly journals Structural Properties and Crystallization Behavior of FINEMET Fe74Cu1.5Nb2.5Si12B10 Alloy Under Different Annealing Condition

2016 ◽  
Vol 64 (1) ◽  
pp. 71-75 ◽  
Author(s):  
Enayet Hossain ◽  
Shamima Choudhury ◽  
DK Saha ◽  
MA Hakim
Keyword(s):  
Grain Size ◽  
Structural Properties ◽  
Annealing Time ◽  
Crystallization Temperature ◽  
Crystallization Behavior ◽  
Annealing Temperature ◽  
Primary Crystallization ◽  
Lattice Parameter ◽  
Annealing Condition ◽  
Si Content

The effect of annealing condition on nanocrystalline amorphous FINEMET type of alloy with nominal composition Fe74Cu1.5Nb2.5Si12B10 prepared by rapid solidification method has been studied to observe the structural properties and crystallization behavior of the material. Nanocrystalline alloy with ferromagnetic bcc nanocrystals with size 15-29 nm embedded in a residual amorphous matrix was produced from amorphous precursor by appropriate annealing condition. The amorphosity of the material, primary crystallization temperature, the nanometric grain size, Si content and the lattice parameter of Fe(Si) nano-phase have been determined from XRD patterns of the samples annealed at different temperatures ranging from 475°C - 650°C with annealing time 5, 12, 20 and 30 minutes. The annealing temperature 475°C (with annealing time of 12 minutes) was determined as primary crystallization temperature with grain size 15 nm, Si content 16.25 at.% and lattice parameter 2.8431 Å. The grains were found to grow rapidly after 550°C attaining a maximum value of 29 nm at the annealing temperature of 650°C. The grain size and Si content increase whereas the lattice parameter decreases with the increase of annealing temperature and time.Dhaka Univ. J. Sci. 64(1): 71-75, 2016 (January)

The Morphology in Film of Polystyrene-b-Polylactide after Temperature Annealing Process

2015 ◽  
Vol 1095 ◽  
pp. 647-650
Author(s):  
Ting Chen ◽  
Jia Nan Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Separation ◽  
Block Copolymer ◽  
Annealing Time ◽  
Self Assembly ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Temperature Gradients ◽  
Si Substrates

Polystyrene-b-Polylactide (PS-b-PLA) was dissolved in chlorobenzene, and the development of the micro-phase separation morphology in asymmetric PS-b-PLA thin films was investigated by AFM. The thin films were prepared by spinning casting at the speed of 6000 r/min for 60s on Si substrates. We get different morphologies of PS-b-PLA thin film by changing the annealing temperature from 150 °C to 170 °C. In addition, the annealing time influences the morphology of the film. When the annealing time increased from 2 hours to 15 hours and 30 hours, the morphology transformed from parallel to perpendicular to the substrate. By applying temperature gradients, we can control the morphology and orientation of the Block copolymer film self-assembly.

Effects of radio-frequency power on structural properties and morphology of AlGaN thin film prepared by co-sputtering technique

2021 ◽  
Vol 20 (2) ◽  
pp. 14-18
Author(s):  
Nur Afiqah Othman ◽  
Nafarizal Nayan ◽  
Mohd Kamarulzaki Mustafa ◽  
Zulkifli Azman ◽  
Megat Muhammad Ikhsan Megat Hasnan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Structural Properties ◽  
Room Temperature ◽  
Thin Film Deposition ◽  
Xrd Analysis ◽  
Amorphous Structure ◽  
Film Deposition ◽  
Rf Power

To date, the deposition of AlGaN thin film using the co-sputtering technique at room temperature has not been reported yet. The use of AlGaN for electronic devices has been widely known because of its ultra-wide bandgap. However, to deposit the AlGaN thin film and achieved high quality of AlGaN films, higher temperature or extra time deposition are needed, which is not compatible with industrial fabrication process. Here, a co-sputtering technique between two power supplies of magnetron sputtering (which are RF and HiPIMS) is introduced to deposit the AlGaN thin films. The AlGaN thin films were deposited at various RF power to study their effect on structural properties and morphology of the thin films. AlGaN films were sputtered simultaneously on silicon (111) substrate for short time and at room temperature using GaN and Al target. Then, the films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), and surface profiler to study their properties. XRD shows the GaN (101) and (013) plane for the AlGaN deposited at RF power of 30 W. Also there only GaN (101) for the AlGaN with 50 W RF power. Yet, the 70 W RF power shows the amorphous structure of AlGaN. The roughness and the grain size of AlGaN film from AFM analysis showed the trend of decreasing and increasing respectively. The roughness of the AlGaN films with 30 W power was 0.82 nm, 0.85 nm for 50 W, and 0.46 nm for 70 W RF power.  The grain size of the AlGaN films was 30.06 nm, 32.10 nm, and 37.65 nm for RF power of 30 W, 50 W, and 70 W respectively. The profilometer found that the thickness of the AlGaN films was decreasing with increasing of RF power. This paper can demonstrate a successful co-sputtering technique of AlGaN. Despite AlGaN crystal structure was not able to found out in the XRD analysis, the effect of RF power has been studied to give significant effects on AlGaN thin film deposition.

scholarly journals Annealing temperature effects on photoelectrochemical performance of bismuth vanadate thin film photoelectrodes

RSC Advances ◽  
2018 ◽  
Vol 8 (51) ◽  
pp. 29179-29188 ◽  
Author(s):  
Le Shi ◽  
Sifei Zhuo ◽  
Mutalifu Abulikemu ◽  
Gangaiah Mettela ◽  
Thangavelu Palaniselvam ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Oxygen Evolution Reaction ◽  
Temperature Effects ◽  
Crystallization Behavior ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Bismuth Vanadate ◽  
Photoelectrochemical Performance

The effects of annealing treatment on crystallization behavior, grain size, electrochemical (EC) and photoelectrochemical (PEC) oxygen evolution reaction (OER) performances of bismuth vanadate (BiVO4) thin films are investigated in this work.

Investigation on the Mechanical Properties of Molybdenum-Doped Zinc Oxide Transparent Thin Film by Sputtering Technique

2010 ◽  
Vol 654-656 ◽  
pp. 1756-1759
Author(s):  
Tao Hsing Chen ◽  
Po Tsung Hsieh ◽  
Chao Yu Huang ◽  
Ji Quan Wang ◽  
Ricky Wen Kuei Chuang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Mechanical Properties ◽  
Grain Size ◽  
Zinc Oxide ◽  
Rf Magnetron Sputtering ◽  
Visible Range ◽  
Sem Images ◽  
Average Value ◽  
Average Grain Size

Zinc oxide thin films were prepared on the glass substrate by rf-magnetron sputtering technique and their structural, optical, and mechanical characteristics were then investigated. As the SEM images have revealed, the average grain size of ZMO thin film are influenced by pressure and sputter power, and the average value of the grain size is about 30~50 nm. The EDS analysis also revealed a successful doping of Mo in ZnO thin film. The transmittance property of ZMO thin film exhibited an excellent transparency in the visible range, where the transmittance was about 90% for ZMO film with Mo. Moreover, good transmittance was also demonstrated in the range of 350nm to 400nm (UV regime). Finally, the nano-mechanical properties of ZMO thin films were investigated using a nanoindentation technique. The corresponding result would show that the Young’s modulus and hardness both increased with decreasing pressure.

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