Impedance Spectroscopy in Ni0.3Zn0.7Fe2O4

2015 ◽  
Vol 1107 ◽  
pp. 59-64
Author(s):  
Mohd Noor Mat ◽  
Mohamed Kamari Halimah ◽  
W.M. Daud ◽  
H. Mansor ◽  
Y. Zainuddin
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Grain Boundary ◽  
Arrhenius Plot ◽  
Experimental Result ◽  
Part Versus ◽  
Rc Circuit ◽  
P Type

Abstract. Impedance spectroscopies were used to investigate the electrical properties of spinel Ni0.3Zn0.7Fe2O4(NZF) ceramics. Measurement was done using NOVO Dielectric Spectrometer from frequency 0.01 Hz to 3 x 106Hz at temperature 30°C to 200°C. Resistivity response phenomena had been observed in sample sintered at 1100°C and carriers involved are mainly due to electron hopping mechanism between n-type and p-type carriers. The high and low response of grain and grain boundary regions were determined by plotting imaginary part versus real part of resistivity. An equivalent RC circuit of the experimental result had been constructed using a model that had been proposed by Hill and Pickup (1985). The model consists of parallel combination of 2 Havriliak-Negami (1966) model, resistivity and dielectric constant where ρ = 5.79 x 106Ωm and ε = 4.45. It is found that 0.40 ± 0.01 eV, 0.14 ± 0.01 eV and 0.13 ± 0.01 eV and 0.38 ± 0.01 eV (extrinsic region) and 0.50 ± 0.01 eV (intrinsic region) for ac and dc activation energy respectively by using Arrhenius plot.

ON THE DIELECTRIC BEHAVIOR OF LiCo3/5Fe2/5VO4 CERAMICS

2010 ◽  
Vol 24 (07) ◽  
pp. 665-670
Author(s):  
MOTI RAM
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Frequency Dependence ◽  
Chemical Method ◽  
Arrhenius Plot ◽  
Dielectric Behavior ◽  
Tangent Loss ◽  
Low Frequencies ◽  
Different Temperatures ◽  
Tan Δ

The LiCo 3/5 Fe 2/5 VO 4 ceramics has been fabricated by solution-based chemical method. Frequency dependence of the dielectric constant (εr) at different temperatures exhibits a dispersive behavior at low frequencies. Temperature dependence of εr at different frequencies indicates the dielectric anomalies in εr at Tc (transition temperature) = 190°C, 223°C, 263°C and 283°C with (εr) max ~ 5370, 1976, 690 and 429 for 1, 10, 50 and 100 kHz, respectively. Frequency dependence of tangent loss ( tan δ) at different temperatures indicates the presence of dielectric relaxation in the material. The value of activation energy estimated from the Arrhenius plot of log (τd) with 103/T is ~(0.396 ± 0.012) eV.

scholarly journals Electrical properties of pure NiO and NiO:Au thin films prepared by using pulsed laser deposition

2019 ◽  
Vol 14 (29) ◽  
pp. 37-43 ◽  
Author(s):  
Raied K. Jamal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Transport Mechanism ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Concentration Increase ◽  
Annealing Temperatures ◽  
P Type

The electrical properties of pure NiO and NiO:Au Films which aredeposited on glass substrate with various dopant concentrations(1wt.%, 2wt%, 3wt.% and 4wt.%) at room temperature 450 Coannealing temperature will be presented. The results of the hall effectshowed that all the films were p-type. The Hall mobility decreaseswhile both carrier concentration and conductivity increases with theincreasing of annealing temperatures and doping percentage, Thus,indicating the behavior of semiconductor, and also the D.Cconductivity from which the activation energy decrease with thedoping concentration increase and transport mechanism of the chargecarriers can be estimated.

scholarly journals Electrical Properties of Cubic InN And GaN Epitaxial Layers as a Function of Temperature

2000 ◽  
Vol 5 (S1) ◽  
pp. 216-222
Author(s):  
J.R.L. Fernandez ◽  
V.A. Chitta ◽  
E. Abramof ◽  
A. Ferreira da Silva ◽  
J.R. Leite ◽  
...  
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Doping Level ◽  
Type Conductivity ◽  
Si Doping ◽  
Donor And Acceptor ◽  
Cubic Gan ◽  
Si Doped ◽  
P Type

Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature.

The grain-boundary-related optical and electrical properties in polycrystalline p-type ZnO films

2006 ◽  
Vol 420 (4-6) ◽  
pp. 448-452 ◽  
Author(s):  
C.Y. Zhang ◽  
X.M. Li ◽  
X.D. Gao ◽  
J.L. Zhao ◽  
K.S. Wan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
P Type

The Effects of Doping and Temperature on the Fermi Level and its Relationship to the Recrystallization Growth Velocity in Ion-Implanted Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
L. E. Mosley ◽  
M. A. Paesler ◽  
P. D. Richard
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Growth Rate ◽  
Fermi Level ◽  
Growth Velocity ◽  
Growth Process ◽  
Arrhenius Plot ◽  
Velocity Versus ◽  
Band Bending ◽  
P Type

ABSTRACTIt has been observed that doping produces an enhancement in the recrystallization growth rate of silicon made amorphous by ionimplantation. This enhancement has been attributed to a shift of the Fermi level with doping. Evidence supporting this is based on the compensating effect of implantation of n- and p-type dopants together. We have previously proposed a model of the recrystallization growth process based on the diffusion of dangling bonds. We suggested that the rate enhancement is due to band bending at the amorphous-crystalline interface produced by doping. We have calculated the change in activation energy for the recrystallization growth velocity for a number of doping concentrations as a function of temperature. The major contribution to the apparent lowering of the activation energy with doping in an Arrhenius plot of the growth velocity versus I/kT is due to the temperature dependence of the Fermi level. Experimental data are compared with the calculated results. In addition differences in the measured growth rates in thermal and laser annealed samples are discussed, with primary emphasis on the lack of a change in the activation energy with doping in the laser annealed case.

scholarly journals Impedance Analyses of Alumina-Molybdenum (Al2O3-Mo) Composites

2012 ◽  
Vol 60 (2) ◽  
pp. 277-281
Author(s):  
S. Hussain ◽  
O. Sbaizero
Keyword(s):  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Grain Boundary ◽  
Composition Dependence ◽  
Ceramic Composites ◽  
The Other ◽  
Alumina Matrix ◽  
Low Frequencies ◽  
Internal Surfaces ◽  
The One

The microstructure and electrical properties of Al2O3-Mo composites were investigated. Different amounts of molybdenum (5, 10, 20, 25 vol%) were added to alumina matrix and the resulting mixture was hot pressed to produce dense metal toughened-ceramic composites. The electrical properties of the composites were examined using impedance spectroscopy in the temperature range 250° C - 1000° C at 50° C temperature intervals. From the analysis, two readily resolvable arcs were found to be present: the one at higher frequencies is the intragranular (grain) response of the bulk; the other is the intergranular (grain boundary) response caused in the internal surfaces of polycrystalline specimens at low frequencies. The effects of grains and grain boundaries on the electrical properties of the composites vary with the composition and temperature. The temperature and composition dependence of grain and grain boundary conductivities are explained by the microstructure.DOI: http://dx.doi.org/10.3329/dujs.v60i2.11533 Dhaka Univ. J. Sci. 60(2): 277-281, 2012 (July)

AC Impedence Properties of Multifunction Ceramics ZrScMo2VO12

2021 ◽  
Vol 13 (4) ◽  
pp. 615-619
Author(s):  
Xiang-Hong Ge ◽  
Xing-Xing Ding ◽  
Bao-He Yuan ◽  
Xian-Sheng Liu ◽  
Yong-Guang Cheng ◽  
...  
Keyword(s):  
Electrochemical Impedance Spectroscopy ◽  
Fuel Cell ◽  
Impedance Spectroscopy ◽  
Grain Boundary ◽  
Electrochemical Impedance ◽  
Frenkel Defect ◽  
Electron Conduction ◽  
Co Doping ◽  
P Type ◽  
Grain Boundary Barrier

Alternating current (AC) impedance properties of negative expansion material ZrScMo2VO12 are studied with electrochemical impedance spectroscopy. The conductivity is measured as 2.49×10-4 Ohm-1cm-1K at 673 K and 4.15×10-4 Ohm-1cm-1K at 773 K. We have also elucidated that the conduction of ZrScMo2VO12 come from defects and the co-doping of N and P type in semiconductors. The Schottky defect and Frenkel defect in the material lead to O2- ion conduction, and co-doping leads to electron conduction. And the grain boundary barrier could limit the conduction of electron and hole. This work may be useful for the application exploration of ZrScMo2VO12 in fuel cell and corresponding energy conversion fields.

Analysis of defect formation in Nb-doped SrTiO3 by impedance spectroscopy

2001 ◽  
Vol 16 (1) ◽  
pp. 192-196 ◽  
Author(s):  
Seong-Ho Kim ◽  
Jung-Ho Moon ◽  
Jae-Hwan Park ◽  
Jae-Gwan Park ◽  
Yoonho Kim
Keyword(s):  
Activation Energy ◽  
Impedance Spectroscopy ◽  
Grain Boundary ◽  
Single Crystal ◽  
Grain Boundaries ◽  
Thermal Activation ◽  
Oxygen Vacancies ◽  
Defect Formation ◽  
Activation Energies ◽  
Single Grain

The thermal activation energies for conduction of Nb-doped SrTiO3 grains and grain boundaries have been investigated by impedance spectroscopy. First, to observe the effect of electrode/SrTiO3 bulk interface, the varied impedances of SrTiO3 single crystal were measured with temperatures. The activation energy of an electrode/bulk interface was determined to be 1.3 eV, whereas that of bulk was 0.8 eV. When the impedances of Nb-doped SrTiO3 ceramics were measured, it was suggested that the more precise impedance values of a single grain and a single grain to grain junction be obtained using a microelectrode method. The activation energies for a grain, a grain boundary, and an electrode/bulk interface were determined to be about 0.8, 1.3, and 1.5 eV, respectively. From these measured results, it was suggested that the activation energy, 0.8 eV, measured in grain was originated from oxygen vacancies and the activation energy, 1.3 eV, in grain boundary was from strontium vacancies.

Surface and Electrical Properties of Electro-Coagulated Thermal Waste

2015 ◽  
Vol 34 (3) ◽  
Author(s):  
S. S. Yesilkaya ◽  
M. Okutan ◽  
O. Içelli ◽  
Z. Yalçın
Keyword(s):  
Activation Energy ◽  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
High Surface ◽  
Cost Effective ◽  
Surface Resistivity ◽  
Cole Plot ◽  
Electrical Modulus ◽  
Cost Effective Alternative ◽  
Shielding Material

AbstractThe Electro-Coagulated Thermal Waste (ECTW) sample of the impedance spectroscopy investigation for electrical modulus and conductivity are presented. Electrical properties via temperature and frequency dependent impedance spectroscopy were investigated. Real and imaginary parts of electrical modulus were measured at various frequencies and a related Cole-Cole plot was acquired as well. The surface resistivity of the ECTW was measured by the four-point probe measurement technique, yielding a relatively high surface resistivity. As a result of this study, an effective building shielding material, which is a cost effective alternative, is proposed. The activation energy values were calculated from the Arrhenius plots at different frequencies. The transition region in this plot may be attributed to activation of ionic conductivity at lower temperatures.

Dielectric Properties of the Solid Solution Formed in the System LiTao3 - “Li2MnO4 ”

1992 ◽  
Vol 293 ◽  
Author(s):  
M.E. Villafuerte-Castrejón ◽  
J.L. Pineda ◽  
A. Huanosta
Keyword(s):  
Activation Energy ◽  
Solid Solution ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Impedance Spectroscopy ◽  
Curie Temperature ◽  
Arrhenius Plots ◽  
The Real

AbstractImpedance spectroscopy methods were used to characterize the electrical properties of the solid solution formed in the system LiTaO3 -“Li2Mn4O9”.Involved parameters were calculated using equialent circuits. Activation energy values were decreasing from around 1.3 eV for lowest concentration of Mn4+ until around 0.8 eV for higher Mn4+ contents. Results will be discused in terms of Z' vs Z" and Arrhenius plots. The ferroelectric character was stablished using the real part of the permittivity against temperature. Curie temperature values Tc were found decreasing toward higher concentration of Mn4+ in the range 630-580°C.

Sign in / Sign up

Export Citation Format

Share Document