Eco-Friendly Glass Color Coating Process Using RF Magnetron Sputtering

2015 ◽  
Vol 1110 ◽  
pp. 203-206
Author(s):  
Jeong Wan Kim ◽  
Yeong Min Park ◽  
Dae Wook Kim ◽  
Kelimu Tulugan ◽  
Tae Gyu Kim
Keyword(s):  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Working Pressure ◽  
Preparation Conditions ◽  
Titanium Target ◽  
Glass Color ◽  
Gas Flow Ratio ◽  
Yellow Orange ◽  
Color Coating

Color glasses are fabricated with Titanium target by RF magnetron sputtering. The physical properties of the Ti thin films are investigated according to preparation conditions, such as argon and oxygen gas flow ratio, RF power and Working pressure. The results indicate that it is possible to deposits various Ti thin film’s of different colors on glass substrate, such as yellow, orange, brown, purple. The thickness according to the color was analyzed using Veeco's Stylus profiler (model: dektak 6M).

scholarly journals SPECTROSCOPIC STUDY OF RF MAGNETRON SPUTTERING PLASMA FOR DEPOSITION TI6AL4V THIN FILM

2021 ◽  
Vol 03 (03) ◽  
pp. 103-110
Author(s):  
Dawood S. ALI ◽  
Omar M. DAWOOD
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Plasma Temperature ◽  
Optical Emission ◽  
Rf Magnetron Sputtering ◽  
Plasma Parameters ◽  
Working Pressure ◽  
Standard Data ◽  
Sputtering Power

In this work, RF magnetron sputtering plasma for the deposition of Ti6Al4V thin film has been investigated by using optical emission spectroscopy at argon working pressure of 5×10-3 mbar. The emission lines intensity of the plasma were measured using a spectrometer, and the identify peaks within the selective range of patterns and matched with the standard data from the NIST website to measure the plasma parameters. Since the sputtering power plays an important role to the growth of thin film, so the effect of sputtering power of 50, 75, 100, 125 and 150Watt has been studied on produced plasma parameters. The size of Ti6Al4V sputtering target was 50mm in diameter. The argon gas flow was 40 s ccm. One can observe that the lines intensities increased with increasing the sputtering power. The plasma temperature increases from 1.86 to 2.15 eV, while its density increased from 2.69 ×1018 to 2.94 ×1018 cm-3with increasing the rf power from 50 to 150 W, which effect on sputtering rate.

Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Magnetron Sputter Deposition ◽  
Ar Gas

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

scholarly journals Influence of N2 Gas Flow Ratio and Working Pressure on Amorphous Mo–Si–N Coating during Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 34 ◽  
Author(s):  
Ki Seong Lim ◽  
Young Seok Kim ◽  
Sung Hwan Hong ◽  
Gian Song ◽  
Ki Buem Kim
Keyword(s):  
Electron Microscopy ◽  
Elastic Modulus ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Amorphous Coating ◽  
Flow Ratio ◽  
Working Pressure ◽  
X Ray ◽  
Transmission Electron ◽  
Gas Flow Ratio

In this study, Mo–Si–N coatings were deposited on Si wafers and tungsten carbide substrates using a reactive direct current magnetron sputtering system with a MoSi powder target. The influence of sputtering parameters, such as the N2 gas flow ratio and working pressure, on the microstructure and mechanical properties (hardness (H), elastic modulus (E), and H/E ratio) of the Mo–Si–N coatings was systematically investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM), nanoindentation, and transmission electron microscopy (TEM). The gas flow rate was a significant parameter for determining the crystallinity and microstructure of the coatings. A Mo2N crystalline coating could be obtained by a high N2 gas flow ratio of more than 35% in the gas mixture, whereas an amorphous coating could be formed by a low N2 gas flow ratio of less than 25%. Furthermore, the working pressure played an important role in controlling the smooth surface and densified structure of the Mo–Si–N coating. For the amorphous Mo–Si–N coating deposited with the lowest working pressure (1 mTorr), the hardness, elastic modulus, and H/E ratio reached from 9.9 GPa, 158.8 GPa, and 0.062 up to 17.9 GPa, 216.1 GPa, and 0.083, respectively.

scholarly journals Fabrication and Testing of All-solid-state Nanoscale Lithium Batteries Using LiPON for Electrolytes

2018 ◽  
Vol 53 ◽  
pp. 01008
Author(s):  
Feihu Tan ◽  
XiaoPing Liang ◽  
Feng Wei ◽  
Jun Du
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solid State ◽  
Magnetron Sputtering ◽  
Specific Capacity ◽  
Rf Magnetron Sputtering ◽  
Open Circuit ◽  
Working Pressure ◽  
Thin Film Battery ◽  
A Current

The amorphous LiPON thin film was obtained by using the crystalline Li3PO4 target and the RF magnetron sputtering method at a N2 working pressure of 1 Pa. and then the morphology and composition of LiPON thin films are analysed by SEM and EDS. SEM shows that the film was compact and smooth, while EDS shows that the content of N in LiPON thin film was about 17.47%. The electrochemical properties of Pt/LiPON/Pt were analysed by EIS, and the ionic conductivity of LiPON thin films was 3.8×10-7 S/cm. By using the hard mask in the magnetron sputtering process, the all-solid-state thin film battery with Si/Ti/Pt/LiCoO2/LiPON/Li4Ti5O12/Pt structure was prepared, and its electrical properties were studied. As for this thin film battery, the open circuit voltage was 1.9 V and the first discharge specific capacity was 34.7 μAh/cm2·μm at a current density of 5 μA/cm-2, indicating that is promising in all-solidstate thin film batteries.

scholarly journals Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2146 ◽  
Author(s):  
Chayma Abed ◽  
Susana Fernández ◽  
Selma Aouida ◽  
Habib Elhouichet ◽  
Fernando Priego ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Band Gap Energy ◽  
Thin Layers ◽  
Working Pressure ◽  
Hall Effect Measurements ◽  
Diffraction Patterns

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10−2 Ω cm−1 was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

scholarly journals Preparation of Copper Nitride Films with Superior Photocatalytic Activity through Magnetron Sputtering

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4325
Author(s):  
Aihua Jiang ◽  
Hongjuan Shao ◽  
Liwen Zhu ◽  
Songshan Ma ◽  
Jianrong Xiao
Keyword(s):  
Photocatalytic Activity ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Energy Gap ◽  
Absorption Efficiency ◽  
Copper Nitride ◽  
X Ray ◽  
Excellent Photocatalytic Activity ◽  
Gas Flow Ratio ◽  
Fluorescence Spectrometer

TiO2 possesses a wide forbidden band of about 3.2 eV, which severely limits its visible light absorption efficiency. In this work, copper nitride (Cu3N) films were prepared by magnetron sputtering at different gas flow ratios. The structure of the films was tested by scanning electron microscope, X-ray diffractometer, and X-ray photoelectron spectroscope. Optical properties were investigated by UV-vis spectrophotometer and fluorescence spectrometer. Results show that the Cu3N crystal possesses a typical anti-ReO3 crystal structure, and the ratio of nitrogen and Cu atoms of the Cu3N films was adjusted by changing the gas flow ratio. The Cu3N films possess an optical band gap of about 2.0 eV and energy gap of about 2.5 eV and exhibit excellent photocatalytic activity for degrading methyl orange (degradation ratio of 99.5% in 30 min). The photocatalytic activity of Cu3N mainly originates from vacancies in the crystal and Cu self-doping. This work provides a route to broaden the forbidden band width of photocatalytic materials and increase their photoresponse range.

Sign in / Sign up

Export Citation Format

Share Document