scholarly journals Preparation of Copper Nitride Films with Superior Photocatalytic Activity through Magnetron Sputtering

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4325
Author(s):  
Aihua Jiang ◽  
Hongjuan Shao ◽  
Liwen Zhu ◽  
Songshan Ma ◽  
Jianrong Xiao
Keyword(s):  
Photocatalytic Activity ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Energy Gap ◽  
Absorption Efficiency ◽  
Copper Nitride ◽  
X Ray ◽  
Excellent Photocatalytic Activity ◽  
Gas Flow Ratio ◽  
Fluorescence Spectrometer

TiO2 possesses a wide forbidden band of about 3.2 eV, which severely limits its visible light absorption efficiency. In this work, copper nitride (Cu3N) films were prepared by magnetron sputtering at different gas flow ratios. The structure of the films was tested by scanning electron microscope, X-ray diffractometer, and X-ray photoelectron spectroscope. Optical properties were investigated by UV-vis spectrophotometer and fluorescence spectrometer. Results show that the Cu3N crystal possesses a typical anti-ReO3 crystal structure, and the ratio of nitrogen and Cu atoms of the Cu3N films was adjusted by changing the gas flow ratio. The Cu3N films possess an optical band gap of about 2.0 eV and energy gap of about 2.5 eV and exhibit excellent photocatalytic activity for degrading methyl orange (degradation ratio of 99.5% in 30 min). The photocatalytic activity of Cu3N mainly originates from vacancies in the crystal and Cu self-doping. This work provides a route to broaden the forbidden band width of photocatalytic materials and increase their photoresponse range.

scholarly journals MICROSTRUCTURE, MECHANICAL AND TRIBOLOGICAL BEHAVIOR OF THE TiAlVN COATING DEPOSITED BY MAGNETRON SPUTTERING

2018 ◽  
Vol 24 (4) ◽  
pp. 266 ◽  
Author(s):  
Doan Dinh Phuong ◽  
Van Duong Luong ◽  
Phan Ngoc Minh ◽  
Hyun Jun Park ◽  
Kyoung Il Moon
Keyword(s):  
Magnetron Sputtering ◽  
Gas Flow ◽  
Morphological Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes ◽  
Alloy Target ◽  
Gas Flow Ratio ◽  
Gas Ratio ◽  
Ball On Disc

<p class="Abstract">In this present work, the TiAlVN coatings were deposited by magnetron sputtering using a single alloy target of Ti<sub>60</sub>Al<sub>30</sub>V<sub>10</sub>. The effect of the argon (Ar) to nitrogen (N<sub>2</sub>) gas flow ratio on the structure, morphological characteristics and mechanical properties of the TiAlVN coating were investigated. The results of X-ray diffraction show the coatings have only face-centred cubic (fcc) structures at different gas ratio of Ar:N<sub>2</sub>. FE-SEM observation analysis each of the TiAlVN coatings indicated that the change of the gas ratio affects the surface morphology. The nano-indentation results demonstrated that coatings deposited with the gas ratio of Ar:N<sub>2</sub> being 9:1 exhibited the highest hardness and elastic modulus. Moreover, with the various gas ratio of Ar:N<sub>2</sub>, ball-on-disc against SUJ2 ball in air at room temperature indicated friction coefficient from 0.43 to 0.58 in dry condition and 0.073 to 0.12 in oil condition, respectively, which is related to the surface roughness and grain sizes of the coatings.</p>

scholarly journals Influence of N2 Gas Flow Ratio and Working Pressure on Amorphous Mo–Si–N Coating during Magnetron Sputtering

Coatings ◽  
2020 ◽  
Vol 10 (1) ◽  
pp. 34 ◽  
Author(s):  
Ki Seong Lim ◽  
Young Seok Kim ◽  
Sung Hwan Hong ◽  
Gian Song ◽  
Ki Buem Kim
Keyword(s):  
Electron Microscopy ◽  
Elastic Modulus ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Amorphous Coating ◽  
Flow Ratio ◽  
Working Pressure ◽  
X Ray ◽  
Transmission Electron ◽  
Gas Flow Ratio

In this study, Mo–Si–N coatings were deposited on Si wafers and tungsten carbide substrates using a reactive direct current magnetron sputtering system with a MoSi powder target. The influence of sputtering parameters, such as the N2 gas flow ratio and working pressure, on the microstructure and mechanical properties (hardness (H), elastic modulus (E), and H/E ratio) of the Mo–Si–N coatings was systematically investigated using X-ray diffractometry (XRD), scanning electron microscopy (SEM), nanoindentation, and transmission electron microscopy (TEM). The gas flow rate was a significant parameter for determining the crystallinity and microstructure of the coatings. A Mo2N crystalline coating could be obtained by a high N2 gas flow ratio of more than 35% in the gas mixture, whereas an amorphous coating could be formed by a low N2 gas flow ratio of less than 25%. Furthermore, the working pressure played an important role in controlling the smooth surface and densified structure of the Mo–Si–N coating. For the amorphous Mo–Si–N coating deposited with the lowest working pressure (1 mTorr), the hardness, elastic modulus, and H/E ratio reached from 9.9 GPa, 158.8 GPa, and 0.062 up to 17.9 GPa, 216.1 GPa, and 0.083, respectively.

scholarly journals Tuning the Morphology of Ag3PO4 Photocatalysts with an Elevated Concentration of KH2PO4

2019 ◽  
Vol 14 (3) ◽  
pp. 625 ◽  
Author(s):  
Khusnul Afifah ◽  
Roy Andreas ◽  
Dadan Hermawan ◽  
Uyi Sulaeman
Keyword(s):  
Aqueous Solution ◽  
Photocatalytic Activity ◽  
Diffuse Reflectance ◽  
Diffuse Reflectance Spectroscopy ◽  
High Photocatalytic Activity ◽  
Elevated Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Defect Sites ◽  
Excellent Photocatalytic Activity

Tuning the morphology of Ag3PO4 photocatalysts with an elevated concentration of KH2PO4 have been successfully conducted. This photocatalyst was prepared by starting material of AgNO3 and KH2PO4.  The KH2PO4 aqueous solution with five concentrations of 0.10 M, 0.15 M, 0.30 M, 0.45 M, and 0.60 M was reacted with AgNO3 aqueous solution. The products were characterized using X-ray Diffraction (XRD), UV-Vis Diffuse Reflectance Spectroscopy (DRS), and Scanning Electron Microscopy (SEM). The concentration of KH2PO4 significantly affected the morphology, size, and crystallinity of catalyst. The morphology of Ag3PO4 may be tuned with the synthesis using an elevated concentration of KH2PO4. The sample with the synthesis using 0.15 M of KH2PO4 exhibited the excellent photocatalytic activity. The high photocatalytic activity was caused by the small size of mixed morphology of sphere and tetrahedron, high crystallinity and defect sites. Copyright © 2019 BCREC Group. All rights reserved 

Ti Doped Cu2O Thin Films: DC Magnetron Sputtering and Structural and Optical Studies

2022 ◽  
Vol 1048 ◽  
pp. 158-163
Author(s):  
Mekala Lavanya ◽  
Srirangam Sunita Ratnam ◽  
Thota Subba Rao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Visible Region ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Film Properties ◽  
Glass Substrates ◽  
Gas Flow Ratio

Ti doped Cu2O thin films were prepared at distinct Argon/Oxygen gas flow ratio of 34/1, 33/2,32/3 and 31/4 with net flow (Ar+O2) of 35 sccm by using DC magnetron sputtering system on glass substrates at room temperature. The gas mixture influence on the film properties studied by using X-ray diffraction, Field emission scanning electron microscopy and UV-Visible spectroscopy. From XRD results, it is evident that, with a decrease in oxygen content, the amplitude of (111) peak increased, peak at a 35.67o scattering angle and the films shows a simple cubic structure. The FESEM images indicated the granularity of thin films was distributed uniformly in a homogenous model and also includes especially pores and cracks. The film deposited at 31/4 showed a 98% higher transmittance in the visible region.

Dependence of Electrical and Optical Properties of the Al Doped ZnO for Transparent Conductors Deposited by rf–Magnetron Sputtering on the O2/Ar Gas Flow Ratio

2007 ◽  
Vol 336-338 ◽  
pp. 564-566 ◽  
Author(s):  
Chong Mu Lee ◽  
Keun Bin Yim ◽  
Choong Mo Kim
Keyword(s):  
Surface Roughness ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Gas Flow ◽  
Rf Magnetron Sputtering ◽  
Transparent Conductors ◽  
Flow Ratio ◽  
Gas Flow Ratio ◽  
Magnetron Sputter Deposition ◽  
Ar Gas

ZnO:Al thin films were deposited on sapphire(001) substrates by RF magnetron sputtering. Effects of the O2/Ar flow ratio in the sputtering process on the crystallinity, surface roughness, carrier concentration, carrier mobility, and optical properties of the films were investigated. AFM analysis results show that the surface roughness is lowest at the O2/Ar flow ratio of 0.5 and tends to increase owing to the increase of the grain size as the O2/Ar flow ratio increases further than 0.5. According to the Hall measurement results the resistivity increases as the O2/Ar flow ratio increases. The transmittance of the film tends to increase as the O2/Ar gas flow ratio increases up to 0.5 but it nearly does not change with continued increases in the O2/Ar flow ratio. Considering the effects of the the O2/Ar flow ratio on the surface roughness, electrical resistivity and transmittance properties of the ZnO:Al film the optimum O2/Ar flow ratio is 0.5 in the RF magnetron sputter deposition of the ZnO:Al film.

Optical Properties of Silica Films Prepared on Sapphire

2005 ◽  
Vol 475-479 ◽  
pp. 3709-3712 ◽  
Author(s):  
Li Ping Feng ◽  
Zheng Tang Liu
Keyword(s):  
Refractive Index ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Silica Films ◽  
Sio2 Films ◽  
X Ray ◽  
Gas Flow Ratio ◽  
Optical And Mechanical Properties ◽  
Deposited Films

As a coating material with excellent optical and mechanical properties, silica films can be used as anti-reflective and protective layers on the windows and domes of sapphire. In this paper, the designed films of SiO2 have been prepared on sapphire wafers and hemisphere dome of sapphire by radio frequency magnetron reactive sputtering. Compositions and structure of SiO2 films were analyzed by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD). The refractive index of deposited films was measured and effects of the coatings on optical properties of sapphire have been studied. The results express that the refractive index of the films can be varied between 3.4 and 1.4 by changing the gas flow ratio. The deposited films can increase the transmission of sapphire in mid-wave IR greatly. The average transmittance of sapphire wafers coated with SiO2 films on both sides can be increased to 96.43 % in 3～5 µm.

scholarly journals Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications

Materials ◽  
2022 ◽  
Vol 15 (1) ◽  
pp. 334
Author(s):  
Rostislav Velichko ◽  
Yusaku Magari ◽  
Mamoru Furuta
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gas Flow ◽  
Hydrogen Gas ◽  
Oxide Semiconductor ◽  
Activation Temperature ◽  
X Ray ◽  
Gas Flow Ratio ◽  
Temperature Activation

Low-temperature activation of oxide semiconductor materials such as In-Ga-Zn-O (IGZO) is a key approach for their utilization in flexible devices. We previously reported that the activation temperature can be reduced to 150 °C by hydrogen-doped IGZO (IGZO:H), demonstrating a strong potential of this approach. In this paper, we investigated the mechanism for reducing the activation temperature of the IGZO:H films. In situ Hall measurements revealed that oxygen diffusion from annealing ambient into the conventional Ar/O2-sputtered IGZO film was observed at >240 °C. Moreover, the temperature at which the oxygen diffusion starts into the film significantly decreased to 100 °C for the IGZO:H film deposited at hydrogen gas flow ratio (R[H2]) of 8%. Hard X-ray photoelectron spectroscopy indicated that the near Fermi level (EF) defects in the IGZO:H film after the 150 °C annealing decreased in comparison to that in the conventional IGZO film after 300 °C annealing. The oxygen diffusion into the film during annealing plays an important role for reducing oxygen vacancies and subgap states especially for near EF. X-ray reflectometry analysis revealed that the film density of the IGZO:H decreased with an increase in R[H2] which would be the possible cause for facilitating the O diffusion at low temperature.

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