Upgrading the Ti/TiN Film Depositions on KP-1 Steel by Using the Anode Ring Bias Voltage

2018 ◽  
Vol 1145 ◽  
pp. 65-74 ◽  
Author(s):  
Un Hak Hwang

By newly adopting of a two-step bias voltage-sustained nitrification of the plasma process the titanium nitride films which applied to the mold base steel KP-1 are manufactured. The two-step process of biased voltages was introduced in order to consider microscopic kinematics of Ti ion bombardments which lead to a deep study on the plasmas including surface temperature of substrates associated with nitrification the KP-1 surface. For supplying of the additional biased voltage to the conventional coater, an anode-biased ring was installed near the plasma source and it ultimately upgraded the typical method of physical vapor depositions which uniquely adopted one bias voltage applied to the substrates because the additional ring controlled both ions and electrons effectively in order to improve surface smoothness and to increase surface hardness with various values of surface temperatures of substrate and deposition times. The discharge ionic current of titanium flux was measured as functions of both the ring bias voltage and the substrate voltage using single probe. By using plasma physics for the two-step bias voltages the discrete mean-free-times, due to cyclonic motions of ions by magnetic field, were studied to show the effects of two bias voltages. The maximal hardness increase of Ti/TiN films deposited on KP-1 was 370% when the surface temperature was 370 °C, the substrate bias voltage of 800volts, and the deposition time was 55 minutes after ring bias was applied. The 2000 times-magnified cross-sectional morphologies of TiN films deposited on the carbon mold base KP-1 were taken as a function of the ring anode bias. The 1000 times-magnified photograph of the TiN-filmed surface deposited on KP-1 mold base was taken to investigate the surface morphology. In order to examine the two-step bias test with respect to both the corrosion problem and the surface hardness, the 2000 times-magnified morphological photograph of a cross-sectional Ti/TiN film which was deposited on the KP-1steel mold was taken.

2017 ◽  
Vol 864 ◽  
pp. 89-93 ◽  
Author(s):  
Un Hak Hwang

In order to improve surface smoothness and increase its surface hardness of the PK-4 steel mold the dependencies of the surface temperatures of substrate, deposition times, and bias voltages applied to the substrate on the TiN film made by the physical vapor deposition were studied. Six main steps of the synthesis process were introduced to improve the robustness. Double applications of the bias voltages increased the surface hardness. The rotating substrates increased the uniformity of the films. 1000 times-magnified pictures were taken to analyze the micro-grains of TiN. SEM pictures were taken to confirm the surface smoothness. Both the surface temperature of substrates and deposition time were affecting factors. The maximal hardness of TiN film deposited on KP-4 was increased by 20%. The surface temperature of substrates contributed to 13% in the increase of hardness. The deposition time also contributed to 6% in the increase of hardness respectively.


1996 ◽  
Vol 11 (5) ◽  
pp. 1149-1156 ◽  
Author(s):  
Syuji Yamamoto ◽  
Hiroshi Ichimura

The effect of substrate bias voltage on the properties of arc ion-plated TiN films onto high speed steels has been investigated. The high density structure with a large crystallite size grew at the high bias voltage. TiN films deposited by higher bias exhibited strong preferential (111) orientation from XRD. The internal stress of TiN films increased at first with increasing substrate bias voltage; however, it decreased as the bias voltage increased over 100 V. The coating adhesion measured by the scratch tester increased with increasing bias voltage, and this is coupled with a cohesion of films. Cutting performance of TiN coated drills, which increased markedly with increasing substrate bias, has been studied in relation to the physical and chemical properties of deposited films.


2015 ◽  
Vol 1110 ◽  
pp. 125-129
Author(s):  
Tatsuya Matsue ◽  
Masayuki Nishida ◽  
Takao Hanabusa

TiN films are widely used as strengthening coatings for cutting tools. In a previous study, the crystal structure of TiN films deposited by arc ion plating was found to be strongly influenced by the bias voltage during deposition. The TiN films deposited under a high bias voltage were found to have a high compressive residual stress of-9.5 GPa. The residual stresses of the TiN films relaxed to thermal stress levels upon annealing. In the present study, the authors investigate the relaxation of the residual stress during heat treatment in atmosphere for TiN films with different initial residual stress values. The surface layer of the TiN films is oxidized by heat treatment in an air atmosphere. However, the crystalline state of the TiN films is hardly affected. So far, the residual stress of the TiN film hardly changes in a temperature state lower than the heating temperature when it is relaxed by heat treatment.


1985 ◽  
Vol 58 ◽  
Author(s):  
M. Naoe ◽  
Y. Hoshi

ABSTRACTTiN films lμm thick were deposited on SKH55 alloy substrate at various substrate bias voltage by a reactive sputtering of Ti target in a mixture of Ar (1 mTorr) and N2 (1 mTorr) with a Target Facing type of high rate sputtering apparatus. The color of the film changes in the order of yellow, golden, silver and golden as the substrate bias voltage increases from 0 to 200 V. The reflection ratio and Vicker's hardness of the film also changes with the bias voltage. Besides, the change of the reflection factor corresponds well to the change of theVicker's hardness of the film. The films with silver color and maximum reflection ratio which are obtained at a rf bias voltage around 100 V, have the largest value of the Vicker's hardness about 3500. While, the films with golden color and small reflection factor, which are obtained at both rf bias voltage around 80 V and 150 V, have the lowest Vicker's hardness of about 1500.


1995 ◽  
Vol 10 (3) ◽  
pp. 634-639 ◽  
Author(s):  
U.C. Oh ◽  
Jung Ho Je ◽  
Jeong Y. Lee

Recently it was observed through cross-sectional TEM that the preferred orientation of the TiN thin film was changed from (200) to (111) with thickness. In this study, the process of the change in the preferred orientation was studied near the critical thickness by x-ray diffraction, and the value of the critical thickness could be estimated. The change of the critical thickness was also investigated with the strain energy per unit volume. The strain energy could be changed by controlling the energy of the bombarding particle, i.e., by adjusting the rf power, the working pressure, and the substrate bias in sputtering. The critical thickness was decreased monotonically in all cases as the energy of the bombarding particle or the strain energy per unit volume was increased. These results surely show the dependence of the change of the preferred orientation on the strain energy in the TiN thin films.


2006 ◽  
Vol 201 (3-4) ◽  
pp. 1899-1901 ◽  
Author(s):  
J.-W. Lim ◽  
J.W. Bae ◽  
Y.F. Zhu ◽  
S. Lee ◽  
K. Mimura ◽  
...  

2012 ◽  
Author(s):  
A. Mallikarjuna Reddy ◽  
Ch. Seshendra Reddy ◽  
Y. Ashok Kumar Reddy ◽  
R. Lydia ◽  
P. Sreedhara Reddy ◽  
...  

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