Photoconductivity of ZnS Thin Films Deposited by Solution-Processing Techniques

We have explored various solution- processing techniques to produce ZnS thin films on conducting (ITO) and silicon substrates along with ZnS-porous silicon composite films. All these samples obtained from different methods and chemical recipes were annealed under fixed ambient conditions and characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and ultraviolet photocurrent response. Various characterizations reveal that the fabrication conditions and intrinsic defects of ZnS play a vital role in optoelectronic performance.

Properties of Nanostructure Bismuth Telluride Thin Films Using Thermal Evaporation

Journal of Nanotechnology ◽

10.1155/2017/4276506 ◽

2017 ◽

Vol 2017 ◽

pp. 1-4 ◽

Cited By ~ 5

Author(s):

Swati Arora ◽

Vivek Jaimini ◽

Subodh Srivastava ◽

Y. K. Vijay

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Bismuth Telluride ◽

Room Temperature ◽

Thermal Evaporation ◽

Silicon Substrates ◽

X Ray Diffraction ◽

Thermal Evaporation Method ◽

X Ray ◽

Bismuth telluride has high thermoelectric performance at room temperature; in present work, various nanostructure thin films of bismuth telluride were fabricated on silicon substrates at room temperature using thermal evaporation method. Tellurium (Te) and bismuth (Bi) were deposited on silicon substrate in different ratio of thickness. These films were annealed at 50°C and 100°C. After heat treatment, the thin films attained the semiconductor nature. Samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) to show granular growth.

A Study on the Characteristics of Cu–Mn–Dy Alloy Resistive Thin Films

Coatings ◽

10.3390/coatings9020118 ◽

2019 ◽

Vol 9 (2) ◽

pp. 118 ◽

Author(s):

Ho-Yun Lee ◽

Chi-Wei He ◽

Ying-Chieh Lee ◽

Da-Chuan Wu

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Annealing Temperature ◽

Phase Evolution ◽

Amorphous Structure ◽

X Ray Diffraction ◽

Temperature Coefficient Of Resistance ◽

X Ray ◽

Transmission Electronmicroscopy ◽

Cu–Mn–Dy resistive thin films were prepared on glass and Al2O3 substrates, which wasachieved by co-sputtering the Cu–Mn alloy and dysprosium targets. The effects of the addition ofdysprosium on the electrical properties and microstructures of annealed Cu–Mn alloy films wereinvestigated. The composition, microstructural and phase evolution of Cu–Mn–Dy films werecharacterized using field emission scanning electron microscopy, transmission electronmicroscopy and X-ray diffraction. All Cu–Mn–Dy films showed an amorphous structure when theannealing temperature was set at 300 °C. After the annealing temperature was increased to 350 °C,the MnO and Cu phases had a significant presence in the Cu–Mn films. However, no MnO phaseswere observed in Cu–Mn–Dy films at 350 °C. Even Cu–Mn–Dy films annealed at 450 °C showedno MnO phases. This is because Dy addition can suppress MnO formation. Cu–Mn alloy filmswith 40% dysprosium addition that were annealed at 300 °C exhibited a higher resistivity of ∼2100 μΩ·cm with a temperature coefficient of resistance of –85 ppm/°C.

MICROSTRUCTURE AND BLUE PHOTOLUMINESCENCE OF HYDROGENATED SILICON CARBONITRIDE THIN FILMS

Surface Review and Letters ◽

10.1142/s0218625x18501779 ◽

2019 ◽

Vol 26 (04) ◽

pp. 1850177 ◽

Author(s):

YINQIAO PENG ◽

JICHENG ZHOU ◽

GUIBIN LEI ◽

YUANJU GAN ◽

YUEFENG CHEN

Keyword(s):

Thin Films ◽

Network Structure ◽

Energy Dispersive Spectrometer ◽

Silicon Carbonitride ◽

X Ray Diffraction ◽

Hydrogenated Silicon ◽

X Ray ◽

Atomic Force ◽

Scanning Electron ◽

Blue Photoluminescence

Hydrogenated silicon carbonitride (SiCN:H) thin films were deposited by sputtering of silicon carbide target in hydrogen-doped argon and nitrogen atmospheres. The properties of the SiCN:H films were analyzed by scanning electron microscopy with energy dispersive spectrometer, atomic force microscope, Fourier transform infrared spectroscopy, X-ray diffraction and fluorescence spectrophotometer. No distinct crystal was formed in the SiCN:H films as-deposited and annealed at 600∘C and 800∘C. The SiCN:H films were mainly composed of Si–N, Si–C, Si–O, C–C, C–N, C[Formula: see text]N, N–Hn bonds and SiCxNy network structure. The strong blue photoluminescence observed from the SiCN:H film annealed at 600∘C was attributed to SiCxNy network structure.

Compositional, Structural and Morphological Analyses of Bulk GeS Alloy and its Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1039.398 ◽

2021 ◽

Vol 1039 ◽

pp. 398-405

Author(s):

Munira M.J. Al-Haji ◽

Raad M.S. Al-Haddad

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Thermal Evaporation ◽

Source Material ◽

Morphological Properties ◽

X Ray Diffraction ◽

Melt Quenching ◽

X Ray ◽

Vacuum Thermal Evaporation ◽

Bulk Germanium monosulphide (GeS) alloy was synthesized using the usual melt-quenching technique. Its grains were used as the source material to deposit thin films by vacuum thermal evaporation. Thin-films samples were doped with 1, 2, and 3 at.% indium by thermal co-evaporation and annealed in a vacuum at temperatures 373, 473 and 550 K for an hour. Compositional, structural, and morphological properties of the bulk GeS alloy and its thin films were investigated by Energy Dispersive X-Ray Spectroscopy (EDS), X-Ray Diffraction (XRD), and Scanning Electron Microscopy (SEM) techniques. The analyses verified the stoichiometry (GeS) of the starting material in the prepared thin films. They also revealed that the thin films under study are amorphous, homogeneous, without any cracks deposited uniformly on the glass substrate with thickness 650 to 700 nm.

Formation and Characterization of the Quasicrystal Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.546-549.1699 ◽

2007 ◽

Vol 546-549 ◽

pp. 1699-1702

Author(s):

Xi Ying Zhou ◽

Liang He ◽

Yan Hui Liu

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Electric Current ◽

Wear Behavior ◽

Micro Hardness ◽

X Ray Diffraction ◽

X Ray ◽

Al-Cu-Fe quasicrystals powder was used to prepare the thin films on the surface of the A3 steel by the means of DMD-450 vacuum evaporation equipment. The thin films with different characterization were obtained through different parameters. The microstructures of the thin films were analyzed by Scanning Electron Microscopy (SEM) and X-ray Diffraction (XRD). Additionally, the nano-hardness and the modulus of the films are tested by MTS and Neophot micro-hardness meter. The results showed that the modulus of the films was about 160GPa. Nano hardness of the films was about 7.5 Gpa. The films consisted of CuAl2, AlCu3. The thickness and the micro-hardness of the films are improved. In same way, with the increase of the electric current, the thickness and the hardness of the films are also improved. Along with increase of the time and the electric current, the wear behavior of the films was improved. To some extent, the microstructure of films contained the quasicrystal phase of Al65Cu20Fe15.

The Use of BaF2 Buffer Layers for the Sputter-Deposition of Ticabacuo Thin-Film Superconductors

MRS Proceedings ◽

10.1557/proc-169-671 ◽

1989 ◽

Vol 169 ◽

Author(s):

K.M. Hubbard ◽

P.N. Arendt ◽

D.R. Brown ◽

D.W. Cooke ◽

N.E. Elliott ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Sputter Deposition ◽

Buffer Layers ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

X Ray ◽

Film Substrate ◽

Ion Backscattering ◽

AbstractThin films of the Tl‐based superconductors often have relatively poor properties because of film/substrate interdiffusion which occurs during the anneal. We have therefore investigated the use of BaF2 as a diffusion barrier. TICaBaCuO thin films were deposited by dc magnetron sputtering onto MgO <100> substrates, both with and without an evaporation‐deposited BaF2 buffer layer, and post‐annealed in a Tl over‐pressure. Electrical properties of the films were determined by four‐point probe analysis, and compositions were measured by ion‐backscattering spectroscopy. Structural analysis was performed by X‐ray diffraction and scanning electron microscopy. The BaF2 buffer layers were found to significantly improve the properties of the TICaBaCuO thin films.

EPITAXIALLY GROWN YBCO THIN FILMS ON LOW LOSS LaAlO3 SUBSTRATE

Modern Physics Letters B ◽

10.1142/s0217984990000477 ◽

1990 ◽

Vol 04 (05) ◽

pp. 369-373 ◽

Cited By ~ 3

Author(s):

Y. Z. ZHANG ◽

L. LI ◽

Y. Y. ZHAO ◽

B. R. ZHAO ◽

Y. G. WANG ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

X Ray Diffraction ◽

Dc Magnetron Sputtering ◽

Low Loss ◽

X Ray ◽

Ybco Thin Films ◽

Zero Resistance ◽

A planar dc magnetron sputtering device was used to prepare high T c and high J c YBCO thin films. Both single crystal and polycrystal thin films were successfully grown on (100) oriented LaAlO 3 substrates. Zero resistance temperature T c0 = 92.3 K and critical current density J c (0) = 3.82 × 106 A/cm 2 at 77 K was obtained. The films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM).

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1088.81 ◽

2015 ◽

Vol 1088 ◽

pp. 81-85 ◽

Author(s):

T.N. Myasoedova ◽

Victor V. Petrov ◽

Nina K. Plugotarenko ◽

Dmitriy V. Sergeenko ◽

Galina Yalovega ◽

...

Keyword(s):

Electron Microscopy ◽

Thin Films ◽

Low Temperature ◽

Annealing Temperature ◽

Sol Gel ◽

X Ray Diffraction ◽

X Ray ◽

Operating Temperatures ◽

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

Influence of Copper Concentration on the Structural and Optical Properties of Chemically Deposited CuSbS2 Thin Films

Journal of New Materials for Electrochemical Systems ◽

10.14447/jnmes.v19i1.342 ◽

2016 ◽

Vol 19 (1) ◽

pp. 015-019 ◽

Author(s):

Jebadurai Joy Jeba Vijila ◽

Kannusamy Mohanraj ◽

Sethuramachandran Thanikaikarasan ◽

Ganesan Sivakumar ◽

Thaiyan Mahalingam ◽

...

Keyword(s):

Thin Films ◽

Field Emission ◽

Secondary Phase ◽

Diffraction Field ◽

Spectroscopic Techniques ◽

X Ray Diffraction ◽

X Ray ◽

Glass Substrates ◽

Simple Chemical ◽

Thin films of CuSbS2 have been deposited on ultrasonically cleaned glass substrates using a simple chemical bath deposition technique. Prepared films have been characterized using X-ray diffraction, Field Emission Scanning Electron Microscopy and UV-Vis-NIR spectroscopic techniques, respectively. X-ray diffraction analysis revealed that the prepared films possess polycrystalline in nature with orthorhombic CuSbS2 in addition to secondary phase of monoclinic Cu3SbS3 and cubic Cu12Sb4S13 for different copper concentrations. Field Emission Scanning Electron Spectroscopic analysis showed that the prepared films possess spherical shaped grains with irregular shaped clusters. Optical absorption analysis showed that the prepared films possess band gap value in the range between 1.7 and 2.4 eV.

Superconducting YBaCuO thin Films by Cu-Ion Implantation

MRS Proceedings ◽

10.1557/proc-201-313 ◽

1990 ◽

Vol 201 ◽

Author(s):

Kevin M. Hubbard ◽

Nicole Bordes ◽

Michael Nastasi ◽

Joseph R. Tesmer

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Thin Films ◽

Ion Implantation ◽

Normal State ◽

Ion Beam ◽

X Ray Diffraction ◽

X Ray ◽

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.