Growth of ZnS Films and Application in Heterojunction

2011 ◽  
Vol 287-290 ◽  
pp. 2140-2143 ◽  
Author(s):  
Jian Huang ◽  
Lin Jun Wang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
Wei Min Shi ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Crystalline Silicon ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Si Substrates ◽  
Current Voltage ◽  
P Type ◽  
Zns Films

ZnS films were prepared by radio-frequency (RF) magnetron sputtering method. The effects of substrate temperature and annealing treatment on the properties of ZnS films were studied. The ZnS films were characterized by X-ray diffraction (XRD), UV-visible spectrophotometer, and electrical measurements. The results showed that the higher substrate temperature and post-deposition annealing treatment was helpful in improving the crystalline quality of the films, and the film had an n-type conductivity. N-type ZnS films were also deposited on p-type single-crystalline silicon (Si) substrates to fabricate ZnS/ Si heterojunction. The current-voltage (I-V) characteristic of the heterojunction was examined, which showed a rectifying behavior with turn-on voltage of about 2V.

Preparation and Properties of N-ZnS Film/P-Si Heterojunction

2011 ◽  
Vol 311-313 ◽  
pp. 1277-1280
Author(s):  
Jian Huang ◽  
Lin Jun Wang ◽  
Ke Tang ◽  
Ji Jun Zhang ◽  
Run Xu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
Heterojunction Diode ◽  
Structural And Optical Properties ◽  
Si Substrates ◽  
Glass Substrates ◽  
P Type ◽  
Zns Films

ZnS films were prepared on silicon (Si) and glass substrates by radio-frequency (RF) magnetron sputtering method. The effect of annealing treatment on the structural and optical properties of ZnS films was studied. The results showed that annealing treatment was helpful in improving the crystalline quality of the ZnS films, and the bandgap was about 3.61eV and 3.49eV for films with and without annealing, respectively. A ZnS/ Si heterojunction diode was fabricated successfully by depositing ZnS films on p-type single-crystalline Si substrates. The electrical and optical property of the device was reported.

Properties of ZnS Films Deposited by Radio Frequency Magnetron Sputtering

2014 ◽  
Vol 602-603 ◽  
pp. 966-969
Author(s):  
Lei Zhang ◽  
Jian Huang ◽  
Hui Min Yang ◽  
Ke Tang ◽  
Mei Ai Lin ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Working Pressure ◽  
Glass Substrates ◽  
Sputtering Power ◽  
Uv Visible ◽  
Zns Films

In this work, zinc sulfide (ZnS) thin films were prepared by radio frequency (RF) magnetron sputtering on glass substrates. The effects of sputtering power, working pressure, substrate temperature and annealing treatment on the structural and optical properties of ZnS films were studied using X-ray diffraction and UV-visible spectrometer in detailed.

Low Temperature Crystallization of Sputter-Deposited TiNi Films

2012 ◽  
Vol 78 ◽  
pp. 81-86 ◽  
Author(s):  
Yoichi Kishi ◽  
Noriaki Ikenaga ◽  
Noriyuki Sakudo ◽  
Zenjiro Yajima
Keyword(s):  
Low Temperature ◽  
Substrate Temperature ◽  
Ion Irradiation ◽  
Electrical Power ◽  
Annealing Treatment ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Diffraction Profile ◽  
Double Beam ◽  
Sputter Deposited

We have found that deposited film can be crystallized without the post-annealing treatment but with the simultaneous ion-irradiation during sputter-deposition at very low substrate temperature. The present paper reviews the low temperature crystallized TiNi films deposited by the above technique. An RF magnetron sputtering apparatus equipped with separate confocal sources as well as with a heating and ion-irradiating system for substrates was used to make the films crystalline. Without using the ion-irradiating system, the films deposited on ambient-temperature substrate have been amorphous. However, crystallized film is deposited even at 353 K of substrate temperature with using the system. Appropriate ion-irradiation is considered to be help to crystallize the film at low substrate temperature. Broad and doublet X-ray diffraction profile of the film, which was diffracted from B19’ and/or R phase, was recorded between 42 degree to 45 degree in 2 theta. The crystallized film deposited on a polyimide sheet was cut into the shape of a double-beam cantilever and the ends of the two beams were connected to an electrical power supply. The cantilever shows a repeatable two-way motion by electrical cycle of 0.1 Hz at room temperature.

Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation

1996 ◽  
Vol 438 ◽  
Author(s):  
S. P. Wong ◽  
Qicai Peng ◽  
W. Y. Cheung ◽  
W. S. Guo ◽  
J. B. Xu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Strong Temperature Dependence ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Large Peak ◽  
P Type

AbstractIon beam synthesis of CoSi2 layers in Si by MEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XTEM, RBS, AFM, X-ray diffraction, ellipsometry, electrical and Hall effect measurements. It was found that a higher substrate temperature during implantation results in an as-implanted Co distribution closer to the surface and hence the formation of a shallower CoSi2 layer after annealing. Buried CoSi2 layers of good crystal quality and low resistivity CoSi2 can be formed by MEVVA implantation and annealing under appropriate conditions. A strong temperature dependence of the Hall coefficient showing a large peak at around 100K was observed for the CoSi2 layers formed in p-type Si substrates but not in n-type substrates. The properties and their dependence on the processing conditions, in particular, the substrate temperature during implantation, are presented and discussed.

Formation and Characteristics of CoSi2 Layers Synthesized by Mevva Implantation

1996 ◽  
Vol 439 ◽  
Author(s):  
S. P. Wong ◽  
Qicai Peng ◽  
W. Y. Cheung ◽  
W. S. Guo ◽  
J. B. Xu ◽  
...  
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Metal Vapor ◽  
Vacuum Arc ◽  
Strong Temperature Dependence ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Hall Effect Measurements ◽  
Large Peak ◽  
P Type

AbstractIon beam synthesis of CoSi2 layers in Si by NIEVVA (Metal Vapor Vacuum Arc) implantation has been performed under various conditions. The formation and characteristics of these CoSi2 layers have been studied by XTEM, RBS, AFM, X-ray diffraction, ellipsometry, electrical and Hall effect measurements. It was found that a higher substrate temperature during implantation results in an as-implanted Co distribution closer to the surface and hence the formation of a shallower CoSi2 layer after annealing. Buried CoSi2 layers of good crystal quality and low resistivity CoSi2 can be formed by MEVVA implantation and annealing under appropriate conditions. A strong temperature dependence of the Hall coefficient showing a large peak at around 100K was observed for the CoSi2 layers formed in p-type Si substrates but not in n-type substrates. The properties and their dependence on the processing conditions, in particular, the substrate temperature during implantation, are presented and discussed.

Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates

2013 ◽  
Vol 795 ◽  
pp. 403-406 ◽  
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohd Hanafi Ani ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage

Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

STRUCTURAL AND ELECTRICAL PROPERTIES OF RF MAGNETRON SPUTTERED TANTALUM OXIDE FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 749-753
Author(s):  
S. V. JAGADEESH CHANDRA ◽  
D. S. PARK ◽  
S. UTHANNA ◽  
CHEL-JONG CHOI ◽  
A. GURUVA REDDY
Keyword(s):  
Tantalum Oxide ◽  
Oxide Films ◽  
Rf Magnetron Sputtering ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Current Voltage Characteristics ◽  
P Type

RF magnetron sputtering technique was employed for deposition of tantalum oxide films on p-type silicon substrates by sputtering of pure tantalum oxide target in the presence of oxygen and argon gases at a temperature of 303 K. X-ray photoelectron spectroscopic and X-ray diffraction studies indicated that the films annealed at 773 K were stoichiometric and polycrystalline respectively. The accumulation capacitance for the devices in a structure of Al/Ta2O5/p-Si has been decreased noticeably lower values for the devices annealed at high temperatures. Improved current–voltage characteristics were observed for all annealed devices with Poole–Frenkel conduction mechanism.

Epitaxial Ge Films on Si Substrates

1987 ◽  
Vol 91 ◽  
Author(s):  
J.S. Mccalmont ◽  
D. Robinson ◽  
K.M. Lakin ◽  
H.R. Shanks
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Film Growth ◽  
Dopant Concentration ◽  
Source Material ◽  
Cluster Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
P Type

ABSTRACTThin films of germanium have been prepared using an ultrahigh vacuum ionized-cluster beam (ICB) system. The dopant concentration of the films was varied by alloying the germanium source material with aluminum, a p-type dopant. X-ray diffraction analysis of the films has shown that an epitaxial (100) germanium film can be deposited on a (100) silicon substrate with a substrate temperature as low as 300°C. The results confirm that ICM deposition can be used to prepare epitaxial germanium films, but ionization of the clusters does not appear to affect the film growth.

P-Doped p-Type ZnΟ Films Deposited by Sputtering and Diffusing

2012 ◽  
Vol 557-559 ◽  
pp. 1984-1987
Author(s):  
Hui Qun Zhu ◽  
Yu Ming Li ◽  
Jun Long Li ◽  
Ling Sun
Keyword(s):  
Hole Concentration ◽  
Hall Effect Measurement ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Phosphorus Concentration ◽  
X Ray Diffraction ◽  
Si Substrates ◽  
Measurement Results ◽  
Doped Zno ◽  
P Type

P-doped ZnO thin films were prepared on different Si substrates by RF magnetron sputtering in Ar and O2 mixed atmosphere. The P-doped ZnO films were changed from n-type to p-type by phosphorus diffusing from the n-Si substrates with higher phosphorus concentration into the ZnO films during depositing. The crystal structure of the ZnO films was examined by X-ray diffraction and confirmed to belong to wurtzite and highly c-axis oriented primarily perpendicular to the substrate. The Hall effect measurement results show that the corresponding hole concentration and risistivity of the P-doped ZnO film was 8.982×1017 cm-3 and 1.489 Ω•cm respectively. This reveals that the P-doped ZnO thin film is really p-type behavior.

Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

2013 ◽  
Vol 1494 ◽  
pp. 77-82
Author(s):  
T. N. Oder ◽  
A. Smith ◽  
M. Freeman ◽  
M. McMaster ◽  
B. Cai ◽  
...  
Keyword(s):  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Hall Effect Measurements ◽  
Sputter Deposited ◽  
P Type ◽  
Post Deposition ◽  
Co Doped

ABSTRACTThin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

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