RBS Study of Multilayer Structure Material of Si/SiO2 Nano Films

2011 ◽  
Vol 324 ◽  
pp. 310-313
Author(s):  
Mohamad Roumie ◽  
Sayed Abboudy ◽  
Maryam Al Sabbagh ◽  
Husam Abu-Safe ◽  
Maher Soueidan ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Layer Structure ◽  
Rf Magnetron Sputtering ◽  
Silicon Oxide Layer ◽  
One Dimensional ◽  
Number Of Layers ◽  
Emitter System ◽  
Spectrometry Technique

An absorber-emitter system was fabricated using a multi-layer structure of amorphous silicon and silicon oxide thin films. The layers were deposited using RF magnetron sputtering system. The thin films were alternated in a periodic structure to form a one-dimensional photonic crystal. Each period in the crystal consisted of one layer of 57 nm thick silicon and a 100 nm thick silicon oxide layer. Several samples were prepared consisted on different periods (N= 1, 2, 3, 4, 5 and 10). Rutherford Backscattering Spectrometry technique (RBS) was used to verify the number of layers and their alternation, checking the thicknesses and determine the real stoichiometry in each layer of Si and SiOx.

COMPARATIVE STUDY OF ONE-DIMENSIONAL PHOTONIC BANDGAP STRUCTURES USING MULTILAYER NONLINEAR THIN FILMS

1995 ◽  
Vol 04 (01) ◽  
pp. 1-11 ◽  
Author(s):  
Y. ZHAO ◽  
D. HUANG ◽  
C. WU ◽  
R. SHEN
Keyword(s):  
Thin Films ◽  
Comparative Study ◽  
Electromagnetic Radiation ◽  
Photonic Bandgap ◽  
One Dimensional ◽  
Number Of Layers ◽  
Quarter Wavelength ◽  
Visible Wavelength Range ◽  
Nonlinear Devices ◽  
Photonic Bandgap Structures

The transmission of electromagnetic radiation through the nonlinear one-dimensional photonic bandgap structure with different configurations are comparatively studied. It is found that the quarter-wavelength thickness arrangement gives rise to a wide window in the visible wavelength range. The modulated superlattice scheme only produces a number of narrow windows. The scheme using random layer thickness is expected to open a very wide window by making use of film nonlinearity when the number of layers is sufficient large. These nonlinear devices can be fabricated by using available materials.

Improved Thermal Stability of Ag Thin Films by Organic Subnanolayer at Interface with Silicon Oxide Layer

2009 ◽  
Vol 48 (11) ◽  
pp. 118002 ◽  
Author(s):  
Midori Kawamura ◽  
Terumasa Fudei ◽  
Yoshio Abe ◽  
Katsutaka Sasaki
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Oxide Layer ◽  
Silicon Oxide ◽  
Silicon Oxide Layer ◽  
Thermal Stability Of

FILM FABRICATION AND OPTICAL PROPERTIES OF AMORPHOUS THIN-FILM OF MODIFIED BNN (Ba2NaNb5O15) SYSTEM

1989 ◽  
Vol 03 (05) ◽  
pp. 387-392 ◽  
Author(s):  
MASAYUKI TSUKIOKA ◽  
TASUKU MASHIO ◽  
MASAJI SHIMAZU ◽  
TAKESHI NAKAMURA
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Oxide ◽  
Rf Sputtering ◽  
Film Surface ◽  
Polished Glass ◽  
Ceramic Plate ◽  
Silicon Oxide Layer ◽  
Amorphous Thin Films ◽  
Congruently Melting

For the first step of making highly aligned BNN thin-film, transparent and colorless amorphous thin-films of modified BNN system were successfully prepared either on silicon oxide layer formed on (111) plane of a polished silicon wafer of 500×0.3 mm or on polished glass ceramic plate of 50×50 mm by rf-sputtering technique. Sputtering targets, whose chemical composition was proposed by K.G. Barraclough as the congruently melting one, were used. Refractive indices and thickness of the films at several positions on these thin-films were measured by prism-coupling technique, and they were about 2.35 and 1.93 μm, respectively over the entire film surface.

Low Temperature Oxidation of Silicon After Copper Ion Implantation

1995 ◽  
Vol 398 ◽  
Author(s):  
E.J. Jaquez ◽  
T.L. Alford ◽  
N.D. Theodore ◽  
D. Adams ◽  
Jian Li ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Copper Ion ◽  
Low Temperature Oxidation ◽  
Temperature Oxidation ◽  
Silicon Oxide Layer ◽  
Moving Interface ◽  
Transmission Electron

ABSTRACTSilicon oxide films ( > 1μm ) were grown at room-temperature after low-energy copper-ion implantation of Si(100) substrates. The structural properties of the silicon oxide layer and the implanted silicon were characterized by Rutherford backscattering spectrometry and transmission-electron microscopy. During room temperature oxidation a portion of the implanted copper resided on the surface and a portion moved with the advancing Si/SiOx interface. This study revealed that the oxide growth rate was dependent on the amount of Cu present at the moving interface. The resulting oxide formed was approximately stoichiometric silicon dioxide.

Ultraviolet laser-induced formation of thin silicon oxide film from the precursor β-chloroethyl silsesquioxane

1999 ◽  
Vol 14 (3) ◽  
pp. 990-994 ◽  
Author(s):  
Jaya Sharma ◽  
Donald H. Berry ◽  
Russell J. Composto ◽  
Hai-Lung Dai
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Silicon Oxide ◽  
Rutherford Backscattering Spectrometry ◽  
Periodic Structures ◽  
Oxide Films ◽  
Laser Pulses ◽  
Silicon Oxide Film ◽  
Oxide Deposition ◽  
193 Nm

Formation of silicon oxide thin films from spin-coated β-chloroethyl silsesquioxane (β-cesq) on silicon, NaCl, and quartz was induced by 193 nm laser pulses. The silicon oxide deposition is characterized by ir, uv, ellipsometry, and Rutherford backscattering spectrometry. The silicon oxide films obtained by uv irradiation were found to have much less carbon and chlorine as impurities and have a higher refractive index as compared to those obtained by annealing. The photoinduced oxide films were found to be smooth, without laser-induced microrough or periodic structures.

Deposition of Fluorocarbon Thin Films on Polypropylene Substrate by RF Magnetron Sputtering

2009 ◽  
Vol 79-82 ◽  
pp. 875-878 ◽  
Author(s):  
Yu Hui Zhang ◽  
Quan Ji ◽  
Wen Fei Chen
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Growth Pattern ◽  
Rf Magnetron Sputtering ◽  
Discharge Power ◽  
Growth Mode ◽  
One Dimensional ◽  
Fluorocarbon Films

Radio frequency (rf) magnetron sputtering of polytetrafluoroethylene (PTFE) using argon as the working gas was used to prepare hydrophobic fluorocarbon films on a polypropylene substrate. The morphology, structure and hydrophobicity of the fluorocarbon films were analyzed by means of SEM, AFM, XPS and contact angle determination. The growth pattern in this system was a typical one-dimensional (1-D) Volmer-Weber growth mode. The films demonstrated dependence of structure and hydrophobicity on the conditions of preparation. The contact angle decreased with increasing discharge power and increased with increasing pressure. Those trends are attributed to the presence of differing proportions of -CF3, -CF2-, -CF-, and -C- in fluorocarbon thin films prepared with different energy.

Growth of Sr1−xNdxCuOy Thin Films by Rf-Magnetron Sputtering and Pulsed-Laser Deposition

1992 ◽  
Vol 275 ◽  
Author(s):  
Nobuyuki Sugii ◽  
Michiharu Ichikawa ◽  
Koichi Kubo ◽  
Takeshi Sakurai ◽  
Kiyoshi Yamamoto ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Pulsed Laser Deposition ◽  
Layer Structure ◽  
Pulsed Laser ◽  
Rf Magnetron Sputtering ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
Infinite Layer ◽  
Sputter Deposited

ABSTRACTSr1−xNdxCuOy thin films are grown on SrTiO3 substrates by rf-magnetron sputtering and pulsed-laser deposition. The sputter-deposited film with x=0 has an “infinite-layer” structure whose lattice constants are: α=0.390 nm and c=0.347 nm. When x is larger than 0.1, the films contain a phase of the Sr14CuO24O41 structure. The laser-deposited films of Sr1−xNdxCuOy with x≤.075 were single phase of the “infinite-layer” structure. The lattice parameter c decreased and the lattice parameter αincreased, as the Nd content, x, increased. The films with α=0.10 and 0.125 exhibited superconducting onset temperatures around 26 K. Weak Meissner signals were observed for these films at temperatures below 30 K.

Temperature Effects on Internal Stress in Molybdenum Thin Films on Single-Crystal Silicon Substrates

1982 ◽  
Vol 18 ◽  
Author(s):  
Jiann-Ruey Chen ◽  
Ching-Hung Ho
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Single Crystal Silicon ◽  
Internal Stresses ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Lower Annealing Temperature ◽  
Spectrometry Technique

Molybdenum thin films were deposited with an electron beam gun onto (100)- oriented silicon substrates. The samples were then annealed in vacuum, and the internal stresses in the molybdenum thin films were studied as functions both of the annealing temperature and of the substrate temperature during deposition. Silicide formation and the film thickness after annealing were monitored by the Rutherford backscattering spectrometry technique, and the stress was determined from the substrate curvature which was measured from Newton's ring interference fringes. It was found that, when the substrate temperature was kept at 400°C during deposition, MoSi2 was formed after annealing at temperatures above 500 °C. This MoSi2 exhibited large tensile stresses of about 2 × 1010 dyn cm−2 for annealing above 700 °C, whereas at the lower annealing temperature of 500 °C the stresses were compressive. No detectable silicides were observed when the substrates were kept at temperatures below 150 °C. The Mo-Si film stresses were tensile for substrates kept at room temperature during deposition and compressive for substrates kept at 150 °C.

Interfacial Structure and Electrical Characteristics of LaNiO3/Si Contacts

2002 ◽  
Vol 17 (6) ◽  
pp. 1350-1355 ◽  
Author(s):  
Tai-Bor Wu ◽  
Chin-Lin Liu ◽  
Yu-Wen Liu
Keyword(s):  
Oxide Layer ◽  
Barrier Height ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Linear Part ◽  
Rf Magnetron Sputtering ◽  
Interfacial Structure ◽  
Silicon Oxide Layer ◽  
Si Substrates ◽  
Clean Interface

The LaNiO3 (LNO) thin films were deposited on Si substrate by rf magnetron sputtering. The interface and electrical properties of LNO/Si contacts were investigated. For the deposition at room temperature, an amorphous LNO film with a clean interface was formed on the Si. However, a thin silicon oxide layer of approximately 2.5 nm was formed at the interface between LNO and Si after rapid thermal annealing (RTA) at temperatures ≥450 °C. On the other hand, a highly (100)-textured LNO film along with an interfacial oxide layer of approximately 6.0 nm was obtained for the deposition at 400–450 °C. Nevertheless, if an ion beam etching was applied prior to the high temperature deposition at 400–450 °C, a clean interface at the interface could be obtained for the LNO/Si contacts. Moreover, crystallites with (111) planes grown epitaxially along the (111) planes of Si were found in the LNO films. All the contacts had shown good current–voltage characteristics of a Schottky diode with a barrier height of 0.69–0.78 eV for the LNO/n-Si contacts and 0.60–0.67 eV for the LNO/p-Si contacts, and the barrier height increased with the thickening of interfacial oxide layer. From the measurement of capacitance (C) under reverse bias (Vr) of the contacts made with LNO deposited on the ion-etched Si substrates, a linear relation was observed in the plot of C−2 against Vr except a deviation of linearity in the low-bias part of the curve. This deviation is most likely due to the segregation and inward diffusion of La and Ni near the interface of LNO/Si contacts. Nevertheless, the barrier heights evaluated from an extrapolation of linear part of the plots are reasonably consistent with those obtained from the I–V measurement.

Sign in / Sign up

Export Citation Format

Share Document