XPS and AES Study of Oxygen Interaction on the Surface of the ZrNi Intermetallic Compound

2012 ◽  
Vol 445 ◽  
pp. 709-713 ◽  
Author(s):  
A. Roustila ◽  
A. Rabehi ◽  
M. Souici ◽  
J. Chene
Keyword(s):  
Intermetallic Compound ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Properties ◽  
Binding Energies ◽  
Ultra High Vacuum ◽  
Ion Sputtering ◽  
Xps Spectra ◽  
Preferential Sputtering ◽  
Application Fields

ZrNi intermetallic compound is used in several application fields due to its very favorable characteristics for the storage of hydrogen. The hydrogen reactions are important, it is vital to examine the evolution of physico-chemical properties at the surface. X-ray photoelectron spectroscopy, is used to follow the evolution of electronic properties of ZrNi versus the ion sputtering in ultra high vacuum in the range 300-600°C. Morever, the evolution of species concentrations at the surface of ZrNi in the range 100-700°C is followed by means of Auger electron spectroscopy. The present results show that temperature and ion sputtering favor significant changes in surface properties of ZrNi. In situ annealing of ZrNi favors the oxygen decontamination associated with segregation of zirconium metal on the surface. The values of binding energies deduced from the reconstruction of XPS spectra, allowed the identification of species present at the surface. The results indicate that nickel is not contaminated and all the obtained sub-oxides are related to bonding states of oxygen with zirconium (Zr2O, ZrO, ZrO2and Zr2O3). The ion sputtering of the surface of ZrNi causes preferential sputtering phenomenon. The later results from the removal of surface layers and from the appearance of zirconium oxide layers initially present on the surface. The results obtained by AES show the segregation of impurities (oxygen and carbon) and of zirconium on the surface of ZrNi. AES observations of Zr segregation start to be important above 300°C and this is in agreement with XPS analysis showing a Zr enrichment of the surface of ZrNi.

scholarly journals Non-Evaporable Getter Ti-V-Hf-Zr Film Coating on Laser-Treated Aluminum Alloy Substrate for Electron Cloud Mitigation

Coatings ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 839
Author(s):  
Jie Wang ◽  
Yong Gao ◽  
Zhiming You ◽  
Jiakun Fan ◽  
Jing Zhang ◽  
...  
Keyword(s):  
Aluminum Alloy ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Film Coating ◽  
High Energy ◽  
Ultra High Vacuum ◽  
Aluminum Surface ◽  
Particle Accelerators ◽  
Xps Spectra ◽  
Alloy Substrate

For improving the vacuum and mitigating the electron clouds in ultra-high vacuum chamber systems of high-energy accelerators, the deposition of Ti-V-Hf-Zr getter film on a laser-treated aluminum alloy substrate was proposed and exploited for the first time in this study. The laser-treated aluminum surface exhibits a low secondary electron yield (SEY), which is even lower than 1 for some selected laser parameters. Non-evaporable getter (NEG) Ti-V-Hf-Zr film coatings were prepared using the direct current (DC) sputtering method. The surface morphology, surface roughness and composition of Ti-V-Hf-Zr getter films were characterized and analyzed. The maximum SEY of unactivated Ti-V-Hf-Zr getter film on laser-treated aluminum alloy substrates ranged from 1.10 to 1.48. The X-ray photoelectron spectroscopy (XPS) spectra demonstrate that the Ti-V-Hf-Zr coated laser-treated aluminum alloy could be partially activated after being heated at 100 and 150 °C, respectively, for 1 h in a vacuum and also used as a pump. The results were demonstrated initially and the potential application should be considered in future particle accelerators.

Interaction of Copper With Single Crystal Sapphire

1985 ◽  
Vol 60 ◽  
Author(s):  
A. G. Schrott ◽  
R. D. Thompson ◽  
K. N. Tu
Keyword(s):  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Initial State ◽  
Xps Spectra ◽  
Similar Treatment ◽  
X Ray ◽  
Energy Location ◽  
Single Crystal Sapphire

AbstractThe effect of small coverages of Cu evaporated in ultra-high vacuum (UHV) on A12O3 (0001) surfaces has been investigated by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). These surfaces were cleaned either by annealing at 1000°C in O2 or by Ar sputtering. They differ both in their initial state and their interaction with Cu. The XPS spectra from as-deposited Cu on sputtered samples exhibit small shifts in the energy location of the various peaks as compared to those from a Cu standard. Annealing the Cu/sputtered A12O3 structure at 500°C produces a shoulder on the Cu 3d peak as well as a new Cu (L3 M4.5 M4.5) Auger feature. Neither of these effects are observed after similar treatment of the Cu/annealed A12O3 structure. An influence of this different bonding situation on the Cu-sapphire interfacial energy is observed.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Theoretical core spectroscopy of molecules interacting with ice surfaces 

2021 ◽  
Author(s):  
Richard Asamoah Opoku
Keyword(s):  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Density Functional ◽  
Trace Gases ◽  
Binding Energies ◽  
Photoelectron Spectra ◽  
Development Fund ◽  
Xps Spectra ◽  
The Core ◽  
Ice Surfaces

<p><strong>Céline TOUBIN</strong><strong><sup>2</sup></strong><strong> and </strong><strong>André Severo Pereira GOMES</strong><strong><sup> 3</sup></strong></p><p><sup>2,3</sup> Laboratoire de Physique des Lasers, des atomes et des Molécules, Université de Lille, Cité Scientifique, 59655 Villeneuve d’Ascq Cedex, France</p><p>E-mail : [email protected]<sup>2</sup> ; [email protected]<sup>3</sup></p><p>Ice plays an essential role as a catalyst for reactions between atmospheric trace gases. The uptake of trace gases to ice has been proposed to have a major impact on geochemical cycles, human health, and ozone depletion in the stratosphere [1]. X-ray photoelectron spectroscopy (XPS) [2], serves as a powerful technique to characterize the elemental composition of such interacting species due to its surface sensitivity. Given the existence of complex physico-chemical processes such as adsorption, desorption, and migration within ice matrix, it is important to establish a theoretical framework to determine the electronic properties of these species under different conditions such as temperature and concentration. The focus of this work is to construct an embedding methodology employing Density Functional (DFT) and Wave Function Theory (WFT) to model and interpret photoelectron spectra of adsorbed halogenated species on ice surfaces at the core level with the highest accuracy possible. </p><p>We make use of an embedding approach utilizing full quantum mechanics to divide the system into subunits that will be treated at different levels of theory [3].</p><p>The goal is to determine core electron binding energies and the associated chemical shifts for the adsorbed halogenated species such as molecular HCl and the dissociated form Cl- at the surface and within the uppermost bulk layer of the ice respectively [4]. The core energy shifts are compared to the data derived from the XPS spectra [4].</p><p>We show that the use of a fully quantum mechanical embedding method, to treat solute-solvent systems is computationally efficient, yet accurate enough to determine the electronic properties of the solute system (halide ion) as well as the long-range effects of the solvent environment (ice).</p><p>We acknowledge support by the French government through the Program “Investissement d'avenir” through the Labex CaPPA (contract ANR-11-LABX-0005-01) and I-SITE ULNE project OVERSEE (contract ANR-16-IDEX-0004), CPER CLIMIBIO (European Regional Development Fund, Hauts de France council, French Ministry of Higher Education and Research) and French national supercomputing facilities (grants DARI x2016081859 and A0050801859).</p><p> </p>

Xps and Voltammetry Studies of Redox Behavior of Lacrl1− NixO3 Electrodes

1998 ◽  
Vol 548 ◽  
Author(s):  
Greg Vovk ◽  
Xiaohua Chen ◽  
Charles A. Mims
Keyword(s):  
Redox State ◽  
Electrochemical Cell ◽  
High Vacuum ◽  
Adsorption Properties ◽  
Binding Energies ◽  
Redox Properties ◽  
Ultra High Vacuum ◽  
Redox Behavior ◽  
Heated Sample

ABSTRACTAn in-situ XPS and voltammetry investigation of the redox properties of LaCrj1-xNixO3(x = 0.4, 1) was carried out by incorporating the materials as one electrode in an electrochemical cell (LaCr1xNixO3|YSZ|Pd:PdO), which was directly mounted on a heated sample stage in an ultra high vacuum (UHV) chamber. Under a 0.7V cathodic bias, the perovskites reduce from formal oxidation state of Ni3+ to Ni2+. This reduction is accompanied by wholesale shifts of the Cr and O core level binding energies, in keeping with the delocalized electronic states in the material. The adsorption properties of the surfaces are affected by the redox state of the surfaces; increased CO2adsorption is observed on the reduced (and therefore more basic) surface.

scholarly journals Investigations of the Deuterium Permeability of As-Deposited and Oxidized Ti2AlN Coatings

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2085 ◽  
Author(s):  
Lukas Gröner ◽  
Lukas Mengis ◽  
Mathias Galetz ◽  
Lutz Kirste ◽  
Philipp Daum ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Physical Vapor Deposition ◽  
Protective Coatings ◽  
High Vacuum ◽  
Barrier Properties ◽  
Reduction Factor ◽  
Ultra High Vacuum ◽  
Max Phase ◽  
Self Healing ◽  
Α Al2o3

Aluminum containing Mn+1AXn (MAX) phase materials have attracted increasing attention due to their corrosion resistance, a pronounced self-healing effect and promising diffusion barrier properties for hydrogen. We synthesized Ti2AlN coatings on ferritic steel substrates by physical vapor deposition of alternating Ti- and AlN-layers followed by thermal annealing. The microstructure developed a {0001}-texture with platelet-like shaped grains. To investigate the oxidation behavior, the samples were exposed to a temperature of 700 °C in a muffle furnace. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) depth profiles revealed the formation of oxide scales, which consisted mainly of dense and stable α-Al2O3. The oxide layer thickness increased with a time dependency of ~t1/4. Electron probe micro analysis (EPMA) scans revealed a diffusion of Al from the coating into the substrate. Steel membranes with as-deposited Ti2AlN and partially oxidized Ti2AlN coatings were used for permeation tests. The permeation of deuterium from the gas phase was measured in an ultra-high vacuum (UHV) permeation cell by mass spectrometry at temperatures of 30–400 °C. We obtained a permeation reduction factor (PRF) of 45 for a pure Ti2AlN coating and a PRF of ~3700 for the oxidized sample. Thus, protective coatings, which prevent hydrogen-induced corrosion, can be achieved by the proper design of Ti2AlN coatings with suitable oxide scale thicknesses.

Fundamental study of the interaction of Ti atoms with spruce surfaces

Holzforschung ◽  
2007 ◽  
Vol 61 (5) ◽  
pp. 523-527 ◽  
Author(s):  
Lothar Klarhöfer ◽  
Florian Voigts ◽  
Dominik Schwendt ◽  
Burkhard Roos ◽  
Wolfgang Viöl ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Strong Interactions ◽  
Titanium Oxide Film ◽  
Fundamental Study ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Metal Atoms

Abstract Metastable induced electron spectroscopy (MIES), ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were applied to study the interaction of Ti metal atoms with spruce surfaces. Spruce surfaces were produced by planing splints from a spruce bar. Ti atoms were adsorbed from a metal evaporator under ultra-high vacuum conditions. The amount adsorbed corresponds to 10 monolayer equivalents. Strong interactions between the spruce surface and metals atoms occurred. Impinging Ti atoms were oxidized by the spruce surface. No Ti agglomeration or particle formation was observed. The surface was smoothed by the Ti applied and was completely covered by a titanium oxide film.

Chemical Reactions at the in Vacuo Au/Inp Interface

1986 ◽  
Vol 83 ◽  
Author(s):  
R. Stanley Williams ◽  
C. Thomas Tsai ◽  
Eun-Hee Cirlin
Keyword(s):  
Intermetallic Compound ◽  
Atmospheric Pressure ◽  
High Vacuum ◽  
Thermodynamic System ◽  
External Pressure ◽  
Ultra High Vacuum ◽  
Reaction Products ◽  
Inp Substrate ◽  
Major Reaction ◽  
Closed Thermodynamic System

ABSTRACTThe reaction between a Au film and an Inp substrate occurs much more readily in vacuo than under an external pressure of an inert ga. At atmospheric pressure, the compounds Au2P3 and the γ intermetallic compound (at times designated Au7In3, Au9In4, or Au2In) are formed at 450 °C and remain fairly stable even when annealed at 500°C for hours. Under ultra-high vacuum conditions, phosphorous readily escapes from the film when a sample is annealed at 300°C for 15 minutes, and the major reaction products are the ψ phase (Au3In2) and another intermetallic compound that is probably AuIn. The presence of an inert gas creates a kinetic barrier for the escape of phosphorous from the surface, and thus Au/InP behaves more like a closed thermodynamic system under pressure than in a vacuum.

Characteristics and Recovery of SI Surfaces Plasma Etching in CHF3 / C2F6

1992 ◽  
Vol 259 ◽  
Author(s):  
H.-H. Park ◽  
K.-H. Kwon ◽  
B.-H. Koak ◽  
S.-M. Lee ◽  
O.-J. Kwon ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Silicon Surface ◽  
Secondary Ion Mass Spectrometry ◽  
High Vacuum ◽  
Silicon Layer ◽  
Ultra High Vacuum ◽  
Rapid Thermal Anneal ◽  
Condition C ◽  
Secondary Ion

ABSTRACTThe effects of SiO2 reactive ion etching (RIE) in CHF3 / C2F6 on the surface properties of the underlying Si substrate have been studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) techniques. The observed two major modifications are (i) a ∼50nm thick silicon layer which contains carbon and fluorine and (ii) 2∼3nm thick residue layer composed entirely of carbon, fluorine, oxygen and hydrogen on the silicon surface. The thermal behaviors of attributed peaks for C 1s, Si 2p, O 1s and F 1s of residue film have been analyzed after in-situ resistive anneal under ultra high vacuum (UHV) condition. C-F1, C-F2 and C-F3 bonds decompose and form C-CFx (x≤3) bonds above 200°C. Above 400°C, C-CFx bonds also decompose to C-C/H bonds. For recovery of the modified silicon surface, reactive ion etched specimens have been exposed to an oxygen plasma. By XPS analysis, the effect of an O2 plasma treatment has been revealed to be completed within 20min. With an O2 plasma pre-treated, a rapid thermal anneal (RTA) treatment as low as 500°2 is found to be effective for removal of impurities in the silicon.

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