Improving Sensitivity of p-n Junction Temperature Sensor by Carrier Lifetime Modification

2008 ◽  
Vol 55-57 ◽  
pp. 517-520
Author(s):  
Amporn Poyai ◽  
E. Ratanaudomphisut ◽  
J. Supadech ◽  
N. Klunngien ◽  
C. Hruanan ◽  
...  
Keyword(s):  
Leakage Current ◽  
Temperature Sensor ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Junction Temperature ◽  
Carrier Generation ◽  
Current Voltage ◽  
Generation Lifetime

This paper presents the relation between the staring cobalt thickness with carrier generation lifetime, which effects to the sensitivity of p-n junction temperature sensor. The starting cobalt thickness of 12, 20 and 30nm have been used. The carrier generation lifetimes have been calculated from the reverse current-voltage (I-V) characteristics. The highest carrier generation lifetime has been obtained in the case of 12nm starting cobalt thickness. The highest sensitivity of p-n junction temperature sensor has also been observed from the case of 12nm starting cobalt thickness. The sensitivity has been calculated from the relation between leakage current versus temperature. The sensitivity of p-n junction temperature sensor can be improved by increasing carrier generation lifetime.

Extraction of Defect in Doping Silicon Wafer by Analyzing the Lifetime Profile Method

2008 ◽  
Vol 55-57 ◽  
pp. 765-768
Author(s):  
W. Pengchan ◽  
T. Phetchakul ◽  
Amporn Poyai
Keyword(s):  
Leakage Current ◽  
Current Density ◽  
Cmos Technology ◽  
In Doping ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Total Leakage ◽  
Implantation Process ◽  
Generation Lifetime ◽  
Key Parameter

The total leakage current in silicon p-n junction diodes compatible with 0.8 µm CMOS technology is investigated. The generation lifetime is a key parameter for the leakage current, which can be obtained from the current-voltage (I-V) and the capacitance-voltage (C-V) characteristics. As will be shown, the electrically active defect from ion implantation process generated in p-n junction can be extracted from the generation current density.

Carrier Lifetime of Platinum Doped P-N Diode after Irradiation by Soft X-Ray

2013 ◽  
Vol 717 ◽  
pp. 117-120
Author(s):  
Budsara Nararug ◽  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Sanya Khunkhao ◽  
Supakorn Janprapha ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Leakage Current ◽  
Carrier Lifetime ◽  
X Ray ◽  
Current Voltage ◽  
Capacitance Voltage

This paper analyzes the effect of X-ray irradiation on the electrical properties of Pt-doped p-n diode. X-ray energy irradiated on Pt-doped P-N diode with 70 keV with time 205 sec. After irradiations, the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics and carrier degeneration lifetime (τg) were investigated. The results show that the leakage current is slightly increased after the diodes were exposed X-ray and affect higher degeneration carrier lifetime. The effects after X-ray irradiation indicated that the defects of the diode have been changed.

Electrical Characterization of Copper Penetration Effects in the Gate Oxide of MOS Devices

2001 ◽  
Vol 714 ◽  
Author(s):  
François Mondon ◽  
Jacques Cluzel ◽  
Denis Blachier ◽  
Yves Morand ◽  
Laurent Martel ◽  
...  
Keyword(s):  
Leakage Current ◽  
Electrical Characterization ◽  
Current Increase ◽  
Mos Capacitors ◽  
Mos Devices ◽  
Thermal Oxide ◽  
Current Voltage ◽  
Bias Temperature Stress ◽  
Generation Lifetime

ABSTRACTCopper penetration in thermal oxide was investigated using MOS capacitors by annealing at 450 °C and bias-temperature stress at 250 °C. Copper induces minority carrier generation lifetime decay and oxide leakage current increase. Degradation is enhanced by capacitor biasing, which confirms the role of Cu+ ions. The current-voltage characteristics are consistent with Poole-Frenkel model, showing that electron transport proceeds through traps created in the oxide bulk by copper. When a negative bias is applied, copper traps are removed from oxide near SiO2-Si interface and the leakage current is cancelled but the generation lifetime remains nil, copper contamination of silicon surface being not removed.None of these effects are observed when the copper gate is separated from oxide by a 10 nm TiN layer, proving that this material is an efficient barrier against copper diffusion at 450°C.

Electrical Characterization of Defects in GaAs Grown on Si by MBE

1987 ◽  
Vol 91 ◽  
Author(s):  
N. Chand ◽  
R. Fischer ◽  
A. M. Sergent ◽  
D. V. Lang ◽  
A. Y. Cho
Keyword(s):  
Leakage Current ◽  
Thermionic Emission ◽  
Reverse Current ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Internal Heating ◽  
Carrier Generation ◽  
Gaas On Si ◽  
Large Current

ABSTRACTWe show that MBE-grown GaAs on Si exhibits only a modest increase in the concentrations of the well-known electron traps typical of MBE-GaAs with no evidence for any new electron deep levels in the upper half of the bandgap in spite of the dislocations and other defects in the material. As shown by Au-GaAs Schottky contacts, the defects are unnoticeable when the device is forward biased but become very active in reverse biased condition, causing large leakage current and low breakdown voltage (although the device is still acceptable for many applications, especially FET's). The defects become more active after hydrogenation and more inactive after a post-growth rapid thermal annealing (RTA). Performance of devices made on thermally annealed GaAs on Si is comparable to those of GaAs on GaAs. Also, following the application of a large- current the device behavior improves, indicating a self-annealing action as a result of internal heating. The reverse current in the as-grown material shows a very weak temperature dependence, indicating its origin is not thermionic emission or carrier generation. It is speculated that a large part of the leakage current in the as-grown GaAs on Si is due to the defect assisted tunneling. After RTA, the average spacing between defect clusters increases, thus reducing the tunneling probability and tremendously improving the device characteristics.

Improved Extraction of the Local Carrier Generation Lifetime from Forward Diode Characteristics

2011 ◽  
Vol 378-379 ◽  
pp. 593-596 ◽  
Author(s):  
W. Pengchan ◽  
Toempong Phetchakul ◽  
Amporn Poyai
Keyword(s):  
Current Density ◽  
Cmos Technology ◽  
Carrier Generation ◽  
Recombination Lifetime ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Recombination Current ◽  
Generation Lifetime ◽  
Local Generation

This paper is proposed to extract the local carrier generation lifetime from forward current-voltage (I-V) characteristics of p-n junctions in case of non-uniform defects. The different geometry p-n junctions have been fabricated by a standard CMOS technology. The forward I-V and high frequency capacitance-voltage (C-V) characteristics of p-n junctions have been measured. The recombination current density can be extracted from the area forward current density by subtracting with the area diffusion current density. Form the recombination current density, the local generation and recombination lifetime can be obtained.

High-Current 10 kV SiC JBS Rectifier Performance

2008 ◽  
Vol 600-603 ◽  
pp. 943-946 ◽  
Author(s):  
Eugene A. Imhoff ◽  
Karl D. Hobart
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Reverse Bias ◽  
Reverse Current ◽  
High Current ◽  
Forward Current ◽  
Current Voltage ◽  
Reverse Blocking ◽  
Large Active Area ◽  
Schottky Rectifier

Forward and reverse bias performance of 10kV, 10A and 20A junction barrier-controlled Schottky 4H silicon carbide rectifiers are presented. Over a temperature range of 30 to 200°C, the forward current-voltage curves show a normal Schottky rectifier relationship and the reverse current-voltage curves show typical PiN blocking. When operated in reverse-blocking at 125°C and 8kV, the 10A JBS rectifiers are notably stable at less than 5μA of leakage current, despite the large active area of the devices.

Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction Diodes

2005 ◽  
Vol 483-485 ◽  
pp. 973-976 ◽  
Author(s):  
Pavel A. Ivanov ◽  
Michael E. Levinshtein ◽  
Tigran T. Mnatsakanov ◽  
John W. Palmour ◽  
Ranbir Singh ◽  
...  
Keyword(s):  
High Voltage ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Reverse Current ◽  
Minority Carrier Lifetime ◽  
Voltage Decay ◽  
Forward Current ◽  
Current Voltage ◽  
Injection Coefficient ◽  
Current Voltage Characteristics

Forward current-voltage characteristics, reverse current recovery and post-injection voltage decay are measured for high voltage 4H-SiC p+non+-diodes. The effects of both minority carrier lifetime in diode no-base and injection coefficient of p+-emitter are investigated with respect to device performance at high injection levels.

scholarly journals LED Rail Signals: Full Hardware Realization of Apparatus with Independent Intensity by Temperature Changes

Electronics ◽  
2021 ◽  
Vol 10 (11) ◽  
pp. 1291
Author(s):  
Giuseppe Schirripa Schirripa Spagnolo ◽  
Fabio Leccese
Keyword(s):  
Temperature Sensor ◽  
Energy Efficient ◽  
Light Emitting Diode ◽  
Junction Temperature ◽  
Light Emitting ◽  
Temperature Changes ◽  
Wide Range ◽  
International Regulations ◽  
Long Lifetime ◽  
Set Up

Nowadays, signal lights are made using light-emitting diode arrays (LEDs). These devices are extremely energy efficient and have a very long lifetime. Unfortunately, especially for yellow/amber LEDs, the intensity of the light is closely related to the junction temperature. This makes it difficult to design signal lights to be used in naval, road, railway, and aeronautical sectors, capable of fully respecting national and international regulations. Furthermore, the limitations prescribed by the standards must be respected in a wide range of temperature variations. In other words, in the signaling apparatuses, a system that varies the light intensity emitted according to the operating temperature is useful/necessary. In this paper, we propose a simple and effective solution. In order to adjust the intensity of the light emitted by the LEDs, we use an LED identical to those used to emit light as a temperature sensor. The proposed system was created and tested in the laboratory. As the same device as the ones to be controlled is used as the temperature sensor, the system is very stable and easy to set up.

Structural and Electrical Characterization of Si-Implanted TiN as a Diffusion Barrier for Cu Metallization

1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh
Keyword(s):  
Leakage Current ◽  
Diffusion Barrier ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Implantation Dose ◽  
Cu Metallization ◽  
Reverse Leakage Current ◽  
Transmission Electron ◽  
Current Voltage

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.

Scanned Electron Beam Annealing of Boron-Implanted Diodes

1980 ◽  
Vol 1 ◽  
Author(s):  
T. O. Yep ◽  
R. T. Fulks ◽  
R. A. Powell
Keyword(s):  
Electron Beam ◽  
Ion Implantation ◽  
Reverse Bias ◽  
Carrier Lifetime ◽  
Reverse Current ◽  
Electrical Activation ◽  
Electrical Characteristics ◽  
Low Resolution ◽  
Implantation Damage ◽  
Dopant Redistribution

ABSTRACTSuccessful annealing of p+ n arrays fabricated by ion-implantation of 11B (50 keV, 1 × 1014 cm-2) into Si (100 has been performed using a broadly rastered, low-resolution (0.25-inch diameter) electron beam. A complete 2" wafer could be uniformly annealed in ≃20 sec with high electrical activation (>75%) and small dopant redistribution (≃450 Å). Annealing resulted In p+n junctions characterized by low reverse current (≃4 nAcm-2 at 5V reverse bias) and higher carrier lifetime (80 μsec) over the entire 2" wafer. Based on the electrical characteristics of the diodes, we estimate that the electron beam anneal was able to remove ion implantation damage and leave an ordered substrate to a depth of 5.5 m below the layer junction.

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