Microstructure and Magnetic Properties of the CoTiO2 Thin Films

2012 ◽  
Vol 557-559 ◽  
pp. 661-664
Author(s):  
Li Yun Jia ◽  
Jia Ling Xu ◽  
Jiao Qu
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
The Other ◽  
Homogeneous Structure ◽  
Ferromagnetic Properties ◽  
Glass Substrates ◽  
Island Type ◽  
Microstructure And Magnetic Properties ◽  
Sputtering System

Co (t nm)/TiO2(200 nm) films were prepared by DC facing-target magnetron reactive sputtering system onto glass substrates at room temperature. The influence of the Co distribution on microstructure and magnetic properties of films was investigated in detail. The results indicate that CoTiO2thin films with t= 2 nm island-type deposited showed a homogeneous structure, and pure ferromagnetic properties of thin films are only attributed to the CoTiO2phases. On the other hand, in case of thin films above t= 2nm, the overall ferromagnetic properties depended on both CoTiO2and CoTi phases.

scholarly journals Evaporation-induced self-assembly synthesis of Ni-doped mesoporous SnO2 thin films with tunable room temperature magnetic properties

2017 ◽  
Vol 5 (22) ◽  
pp. 5517-5527 ◽  
Author(s):  
Junpeng Fan ◽  
Miguel Guerrero ◽  
Adrián Carretero-Genevrier ◽  
Maria Dolors Baró ◽  
Santiago Suriñach ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Self Assembly ◽  
Room Temperature ◽  
Ferromagnetic Properties ◽  
Evaporation Induced Self Assembly ◽  
Sno2 Thin Films ◽  
Controlled Doping ◽  
Mesoporous Sno2

Controlled doping of mesoporous SnO2 thin films with Ni2+ during evaporation induced self-assembly (EISA) synthesis enables room-temperature ferromagnetic properties.

scholarly journals Modeling of magnetic properties (Cr/NiO/Ni) based multi-layers deposited by magnetron sputtering using Preisach model

2017 ◽  
Author(s):  
A. Bendjerad ◽  
A. Benhaya ◽  
S. Boukhtache ◽  
M. Zergoug ◽  
K. Benyahia
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hysteresis Loops ◽  
Preisach Model ◽  
Substrate Plane ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Good Agreement

In the present work, thin films of Cr/NiO/Ni are deposited on glass substrates using RF magnetron sputteringtechnique. The uniformity and homogeneity of the prepared films were controlled by varying the power of the source, the target-substrate distance and the pressure of the plasma gas which is argon. In order to test the Preisach Model, we carried outmeasurements according to two directions: parallel and perpendicular to the substrate plane using a Vibrating SampleMagnetometer at room temperature. Good agreement has been obtained by comparing the experimental hysteresis loops to theones determined using Preisach model. We conclude that this model is powerful in predicting the magnetic properties ofmultilayer systems. # Cr/NiO/Ni #MAGNETRON_SPUTTERING #PREISACH MODEL #MAGNETIC_HYSTERESIS

scholarly journals Effect of Different Deposition Power of In2O3Target on the Characteristics of IGZO Thin Films Using the Cosputtering Method

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Shang-Chao Hung ◽  
Kin-Tak Lam ◽  
Cheng-Fu Yang ◽  
Yu-Jhen Liou
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Deposition Time ◽  
Optical Band Gap ◽  
Transparent Electrode ◽  
Amorphous Structure ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Deposition Power ◽  
Sputtering System

The (In, Ga, Zn)Ox(IGZO) thin films were deposited on glass substrates using cosputtering method in radio frequency magnetron sputtering system. Zn2Ga2O5(Ga2O3-2 ZnO, GZO) and In2O3ceramics were used as targets and dual guns were used to deposit the IGZO thin films. Deposition power of GZO target was 80 W and deposition power of pure In2O3target was changed from 70 W to 100 W, and the deposition time was 30 min. The effect of deposition power of In2O3target on the crystalline, surface, electrical, and optical properties of the IGZO thin films was investigated at room temperature in a pure Ar atmosphere. The cosputtered IGZO thin films showed a very smooth and featureless surface and an amorphous structure regardless of the deposition power of In2O3target due to the room temperature sputtering process. However, the cosputtered IGZO thin films exhibited transparent electrode properties because they had high transmittance ratio and low resistivity. The value variations in the optical band gap(Eg)values of the IGZO thin film were evaluated from the plots of(αhν)2=c(hν-Eg). We would also show that the deposition power of In2O3target would have a large effect on mobility andEgvalue of the IGZO thin films.

X-ray photoelectron spectroscopy of annealed Co-Cr films

1991 ◽  
Vol 49 ◽  
pp. 750-751
Author(s):  
B.G. Demczyk ◽  
H.W. Estry
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Recording Media ◽  
Perpendicular Recording ◽  
X Ray ◽  
Alloy Target ◽  
Compositional Changes ◽  
Sputtering System

Co-Cr thin films have been studied extensively as leading candidates for perpendicular recording media. The enhancement of the magnetic properties (saturation magnetization and coercivity) in rfsputtered Co-Cr films has been reported by several investigators. Concurrent work has revealed similar improvements in the magnetic properties of annealed Co-Cr films produced by magnetron sputtering. Honda et al. propose that compositional inhomogeneities in annealed films give rise to these properties changes. In this work, we have employed X-ray photoelectron spectroscopy (XPS) to investigate compositional changes in annealed Co-Cr layers of thickness 10-200 nm.Films were deposited from a Co-22wt%Cr alloy target onto glass (Coming Type 7059) substrates using a Varian DC Magnetron ("S" gun) sputtering system. Sputtering conditions included an argon pressure of lmTorr and room temperature substrates. The sputtering rate was 0.25 nm/sec. Annealing was performed at 360°C in a vacuum (10-6 Torr) in incremental times up to 49 hours.

scholarly journals Semiconductor behavior and room temperature ferromagnetism in e-beam evaporated Co/TiO-=SUB=-2-=/SUB=- multilayer thin films

2019 ◽  
Vol 61 (8) ◽  
pp. 1423
Author(s):  
Faruk Hossain ◽  
M.A.I. Nahid ◽  
Sarwar Pervez ◽  
M.A. Islam
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Resistivity Measurement ◽  
Annealed Sample ◽  
Multilayer Thin Films ◽  
Glass Substrates ◽  
Semiconductor Behavior ◽  
Structure Surface

AbstractThe Co/TiO_2 multilayer thin films have been deposited by e-beam evaporation method on glass substrates in vacuum and annealed in air at 773 K for 1 h. The crystal structure, surface morphology, optical properties, electrical properties and magnetic properties of Co/TiO_2 multilayer thin films have been systematically investigated. The results showed that the particle sizes were significantly reduced when the samples are annealed and the enlargement of particle size occurred when the samples thickness is increased. The spectroscopic analysis exhibited enhanced transmittance and higher optical band gap of annealed sample than the as-deposited one and it was decreased with sample thickness. The resistivity measurement confirmed resistivity decreament with temperature. Furthermore, by investigating the magnetic properties, room temperature ferromagnetism was observed.

GROWTH, STRUCTURAL CHARACTERIZATION AND INTERFACIAL REACTION OF MAGNETRON SPUTTERED CeO2 THIN FILMS ON DIFFERENT SUBSTRATES

2014 ◽  
Vol 21 (04) ◽  
pp. 1450054 ◽  
Author(s):  
PARTHASARATHI BERA ◽  
CHINNASAMY ANANDAN
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Room Temperature ◽  
The Other ◽  
Oxidation States ◽  
Temperature Growth ◽  
Glass Substrates ◽  
Xrd Studies ◽  
Xrd Patterns ◽  
Fine Morphology

CeO 2 thin films were deposited on Si , Al , Ti –6 Al –4 V alloy, Si 3 N 4 and glass substrates by magnetron sputtering at room temperature. Growth of CeO 2 films on Si and Si 3 N 4 and effect of annealing were investigated by XRD, FESEM and AFM. Interaction between deposited CeO 2 films and Si , Al , Ti –6 Al –4 V alloy, Si 3 N 4 and glass substrates was investigated by XPS. XRD studies show that films are oriented preferentially to (200)-direction of CeO 2 and no significant change is observed in the XRD patterns of films after heat treatment. CeO 2 film on Si 3 N 4 exhibits rough morphology, whereas very fine morphology is observed in CeO 2 film on Si . CeO 2 film on Si shows lower roughness in relation to that on Si 3 N 4 as demonstrated by AFM studies. XPS results show that Ce is present as both +4 and +3 oxidation states in CeO 2 film deposited on Si and Al substrates, whereas Ce 4+ is the main species in CeO 2 films deposited on Ti –6 Al –4 V alloy, Si 3 N 4 and glass substrates. Ce3d , Si2p and O1s core level spectra demonstrate that Ce 2 O 3 or cerium silicate and SiO x type of species are formed at the interface of CeO 2 and Si . Similarly, formation of interfacial species like Ce 2 O 3 or cerium aluminate is evident in CeO 2 film on Al as demonstrated by XPS studies. On the other hand, interfacial reactions between CeO 2 and Ti –6 Al –4 V alloy, Si 3 N 4 and glass substrates are limited in the respective films.

Microstructural and Magnetic Properties of C/FePt/Ti Films by Facing Sputtering

2012 ◽  
Vol 557-559 ◽  
pp. 1787-1790
Author(s):  
Jia Ling Xu ◽  
Li Yun Jia ◽  
Hong Fan
Keyword(s):  
Particle Size ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
C 30 ◽  
Ti Films ◽  
Sputtering System

C/FePt/Ti nano-thin films were prepared by DC facing-target magnetron sputtering system onto glass substrates at room temperature and subsequently in situ annealed for 500 °C 30 min in vacuum. The influence of C capping layer on microstructural and magnetic properties of the FePt films were investigated in detail. Atomic force microscopy (AFM) images indicate that C can effectively isolate the particles, refine particle, and distribute; however, the particle size distribution is uneven for too much C. The easy magnetic axial orientation is changed with the C layer thickness.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

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