Sapphire Substrate Ring-Belt Magnetorheological Polishing Processing

2013 ◽  
Vol 683 ◽  
pp. 616-620 ◽  
Author(s):  
Wei Jin Guo ◽  
Zhong Da Guo
Keyword(s):  
Material Removal Rate ◽  
Sapphire Substrate ◽  
Material Removal ◽  
Ph Value ◽  
Removal Rate ◽  
Substrate Material ◽  
Main Process ◽  
Optimal Conditions ◽  
Convergence Trend ◽  
Magnetorheological Polishing

Using the ring-belt magnetorheological polishing equipment to do polishing experiments on sapphire substrate, analyzed the influence of the main process parameters on polishing, focus on the influence of the polishing liquid PH value on material removal. Experimental results show that, with the increase of the PH value of the polishing liquid, sapphire substrate material removal rate increased, the roughness value was convergence trend, roughness will increases when the PH value is greater than 12.5. In optimal conditions, the maximum material removal rate of sapphire substrate was 5.6μm/h, after polishing the original surface roughness was decreased from 11nm to 0. 84nm. The ring-belt magnetorheological finishing applicable to sapphire efficient and ultra-smooth processing.

scholarly journals Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

2020 ◽  
Vol 10 (22) ◽  
pp. 8065
Author(s):  
Linlin Cao ◽  
Xiang Zhang ◽  
Julong Yuan ◽  
Luguang Guo ◽  
Teng Hong ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Material Properties ◽  
Chemical Mechanical Polishing ◽  
Crystal Orientation ◽  
Material Removal ◽  
Removal Rate ◽  
Substrate Material ◽  
Mechanical Polishing ◽  
Sapphire Crystal ◽  
Research Objects

Sapphire has been the most widely used substrate material in LEDs, and the demand for non-C-planes crystal is increasing. In this paper, four crystal planes of the A-, C-, M- and R-plane were selected as the research objects. Nanoindentation technology and chemical mechanical polishing technology were used to study the effect of anisotropy on material properties and processing results. The consequence showed that the C-plane was the easiest crystal plane to process with the material removal rate of 5.93 nm/min, while the R-plane was the most difficult with the material removal rate of 2.47 nm/min. Moreover, the research results have great guiding significance for the processing of sapphire with different crystal orientations.

Study on Material Removal Rate of CMP 6H-SiC Crystal Substrate (0001) C Surface Based on Abrasive Alumina (Al2O3)

2012 ◽  
Vol 497 ◽  
pp. 250-255
Author(s):  
Jian Xiu Su ◽  
Jia Xi Du ◽  
Xing Long Liu ◽  
Hai Na Liu
Keyword(s):  
Integrated Circuits ◽  
Material Removal Rate ◽  
Material Removal ◽  
Ph Value ◽  
Removal Rate ◽  
Study Results ◽  
Crystal Substrate ◽  
Slurry Composition ◽  
Polishing Pressure ◽  
Abrasive Size

SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the polishing slurry composition, such as the pH value, the abrasive size and its concentration, the dispersant and the oxidants, the rotational speed of the polishing platen and the workpiece and the polishing pressure on the material removal rate (MRR) of SiC crystal substrate (0001) C surface based on the alumina abrasive in chemical mechanical polishing (CMP). This study results will provide the reference for developing the slurry, optimizing the process parameters and researching the material removal mechanism in CMP of SiC crystal substrate.

A Study of the Solid-State Reaction for Polishing Sapphires

2012 ◽  
Vol 497 ◽  
pp. 195-199 ◽  
Author(s):  
Qian Fa Deng ◽  
Zhi Xiong Zhou ◽  
Zhao Zhong Zhou ◽  
Ju Long Yuan ◽  
Ji Cui Wang
Keyword(s):  
Solid State ◽  
Surface Quality ◽  
Material Removal Rate ◽  
Surface Finish ◽  
Solid State Reaction ◽  
Material Removal ◽  
Removal Rate ◽  
Substrate Material ◽  
Quality Requirements

As sapphire is an important substrate material, stringent surface quality requirements (i.e., surface finish and flatness) are required. In order to acquire the higher material removal rate and the better surface quality of sapphire, the solid state-reaction were introduced in this paper; abrasive of SiO2 and SiO2 with mixing the MgF2 power were compared to polish sapphire. The result showed that abrasive of SiO2 with mixing the MgF2 can obtain higher material removal rate and better surface quality. The result of the pr

Chemical Effect on the Material Removal Rate in the CMP of Silicon Wafers

2010 ◽  
Vol 126-128 ◽  
pp. 511-514
Author(s):  
Yong Guang Wang ◽  
Liang Chi Zhang ◽  
Altabul Biddut
Keyword(s):  
Hydrogen Peroxide ◽  
Flow Rate ◽  
Material Removal Rate ◽  
Material Removal ◽  
Ph Value ◽  
Removal Rate ◽  
Chemical Effect ◽  
Alumina Particles ◽  
Chemical Factors ◽  
Slurry Flow Rate

This paper investigates the effects of some chemical factors on the material removal rate (MRR) in chemo-mechanical polishing (CMP) of Si (100) wafers. The CMP was carried out in alkaline slurry using alumina and ceria particles with hydrogen peroxide. When using the alumina particles, the MRR initially decreases with increasing the slurry pH value until pH = 9. Nevertheless, the application of the ceria particles increases the MRR before the pH of the slurry reaches 10. A higher slurry flow rate brings about a greater MRR.

Process Optimization of Lapping Sapphire Substrate with Fixed Diamond Abrasive Pad

2016 ◽  
Vol 693 ◽  
pp. 1090-1097 ◽  
Author(s):  
Jian Bin Wang ◽  
Zhen Li ◽  
Hong Gao ◽  
Da Shu ◽  
Ping Xiao
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Sapphire Substrate ◽  
Material Removal ◽  
Removal Rate ◽  
Orthogonal Experiment ◽  
Machining Parameters ◽  
Fixed Abrasive Pad ◽  
Fixed Abrasive ◽  
Diamond Abrasive

The production cost of the sapphire substrate was restricted by the efficiency of processing and the surface quality. A proposed level orthogonal experiment was conducted to reveal the effect of workbench speed, lapping pressure, the Concentration of triethanolamine and abrasive pad types on the material removal rate and surface roughness and morphology of sapphire substrate when lapped with a diamond fixed-abrasive pad. The results showed that the average material removal rate of sapphire is about 24μm/min, and the surface roughness Ra achieves 0.36μm when the 200/230 mesh diamond fixed-abrasive pad was used. The material removal rate and the surface roughness as the optimization goal, the optimal lapping parameters were as follows: the lapping pad with raised, lapping pressure 0.075MPa, workbench speed 120rpm and the Concentration of triethanolamine 1%. Under these optimal machining parameters, the material removal rate reached 42μm /min and the surface roughness Ra reached 0.37μm.

Effects of Process Parameters on Surface Roughness and MRR in the hard turning of EN 36 steel

2018 ◽  
pp. 102-110
Author(s):  
Amritpal Singh ◽  
Rakesh Kumar
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Material Removal ◽  
Hard Turning ◽  
Control Parameter ◽  
Removal Rate ◽  
Cutting Speed ◽  
Depth Of Cut ◽  
Cutting Condition ◽  
Dry Cutting

In the present study, Experimental investigation of the effects of various cutting parameters on the response parameters in the hard turning of EN36 steel under the dry cutting condition is done. The input control parameters selected for the present work was the cutting speed, feed and depth of cut. The objective of the present work is to minimize the surface roughness to obtain better surface finish and maximization of material removal rate for better productivity. The design of experiments was done with the help of Taguchi L9 orthogonal array. Analysis of variance (ANOVA) was used to find out the significance of the input parameters on the response parameters. Percentage contribution for each control parameter was calculated using ANOVA with 95 % confidence value. From results, it was observed that feed is the most significant factor for surface roughness and the depth of cut is the most significant control parameter for Material removal rate.

Performance Analysis of Trihexyltetradecylphosphonium Chloride Ionic Fluid under MQL Condition in Hard turning

2020 ◽  
Vol 17 (1) ◽  
pp. 7629-7647
Author(s):  
A. Pandey ◽  
R. Kumar ◽  
A. K. Sahoo ◽  
A. Paul ◽  
A. Panda
Keyword(s):  
Material Removal Rate ◽  
Feed Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Cutting Speed ◽  
Coconut Oil ◽  
Chip Morphology ◽  
Weight Fraction ◽  
Cutting Fluid ◽  
Depth Of Cut

The current research presents an overall performance-based analysis of Trihexyltetradecylphosphonium Chloride [[CH3(CH2)5]P(Cl)(CH2)13CH3] ionic fluid mixed with organic coconut oil (OCO) during turning of hardened D2 steel. The application of cutting fluid on the cutting interface was performed through Minimum Quantity Lubrication (MQL) approach keeping an eye on the detrimental consequences of conventional flood cooling. PVD coated (TiN/TiCN/TiN) cermet tool was employed in the current experimental work. Taguchi’s L9 orthogonal array and TOPSIS are executed to analysis the influences, significance and optimum parameter settings for predefined process parameters. The prime objective of the current work is to analyze the influence of OCO based Trihexyltetradecylphosphonium Chloride ionic fluid on flank wear, surface roughness, material removal rate, and chip morphology. Better quality of finish (Ra = 0.2 to 1.82 µm) was found with 1% weight fraction but it is not sufficient to control the wear growth. Abrasion, chipping, groove wear, and catastrophic tool tip breakage are recognized as foremost tool failure mechanisms. The significance of responses have been studied with the help of probability plots, main effect plots, contour plots, and surface plots and the correlation between the input and output parameters have been analyzed using regression model. Feed rate and depth of cut are equally influenced (48.98%) the surface finish while cutting speed attributed the strongest influence (90.1%). The material removal rate is strongly prejudiced by cutting speed (69.39 %) followed by feed rate (28.94%) whereas chip reduction coefficient is strongly influenced through the depth of cut (63.4%) succeeded by feed (28.8%). TOPSIS significantly optimized the responses with 67.1 % gain in closeness coefficient.

Effect of SiC-Cu Electrode on Material Removal Rate, Tool Wear and Surface Roughness in EDM Process

2020 ◽  
Vol 38 (9A) ◽  
pp. 1406-1413
Author(s):  
Yousif Q. Laibia ◽  
Saad K. Shather
Keyword(s):  
Surface Roughness ◽  
Tool Wear ◽  
Material Removal Rate ◽  
Material Removal ◽  
Electrical Discharge Machining ◽  
Removal Rate ◽  
304 Stainless Steel ◽  
Tool Electrode ◽  
Pulse Time ◽  
Edm Process

Electrical discharge machining (EDM) is one of the most common non-traditional processes for the manufacture of high precision parts and complex shapes. The EDM process depends on the heat energy between the work material and the tool electrode. This study focused on the material removal rate (MRR), the surface roughness, and tool wear in a 304 stainless steel EDM. The composite electrode consisted of copper (Cu) and silicon carbide (SiC). The current effects imposed on the working material, as well as the pulses that change over time during the experiment. When the current used is (8, 5, 3, 2, 1.5) A, the pulse time used is (12, 25) μs and the size of the space used is (1) mm. Optimum surface roughness under a current of 1.5 A and the pulse time of 25 μs with a maximum MRR of 8 A and the pulse duration of 25 μs.

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