Effect of TiO2 Doping on Microdefects and Electrical Properties of ZnO-Based Varistors

2017 ◽  
Vol 373 ◽  
pp. 197-200
Author(s):  
Zheng Ying Chen ◽  
Mei Yu Li ◽  
Yan Wan ◽  
Li Fang Han ◽  
Yu Yang Huang ◽  
...  
Keyword(s):  
Electrical Property ◽  
Electrical Properties ◽  
Leakage Current ◽  
Positron Lifetime ◽  
Nonlinear Coefficient ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Lifetime Spectrum ◽  
The Mean ◽  
Varistor Property

Positron lifetime spectrum and electrical property measurements were performed on ZnO-based ceramics doped with different contents of TiO2. For ZnO-based ceramics with TiO2 content less than 1.8 mol%, the mean positron lifetime of the ZnO-based ceramic decreases with increasing in TiO2 content, and reaches a minimum value at 1.8 mol% TiO2. As the TiO2 content higher than 1.8 mol%, the mean positron lifetime increases with TiO2 content. The ZnO-based varistor with 1.8 mol% TiO2 exhibites an optimized varistor property; it has a relatively low leakage current IL, a relatively low breakdown voltage VB, and a relatively high nonlinear coefficient α. The effects of TiO2 doping on microdefects and electrical properties of ZnO-based varistors were discussed.

Effect of Simultaneous Addition of Zr and Y on Electrical Characteristics of ZnO Varistors

2011 ◽  
Vol 485 ◽  
pp. 257-260 ◽  
Author(s):  
Takayuki Watanabe ◽  
Ai Fukumori ◽  
Yuji Akiyamna ◽  
Yuuki Sato ◽  
Shinzo Yoshikado
Keyword(s):  
Leakage Current ◽  
Nonlinear Coefficient ◽  
The Other ◽  
Electrical Characteristics ◽  
Simultaneous Addition ◽  
Zno Varistor ◽  
Low Leakage ◽  
Electrical Degradation ◽  
Low Leakage Current ◽  
Zno Varistors

The effect of simultaneously adding Zr and Y to Bi–Mn–Co–Sb–Si–Cr–Ni-added ZnO varistors (having the same composition as a commercial varistor) on the varistor voltage, leakage current, and resistance to electrical degradation were investigated. Varistor voltage increased with increasing amount of Y for addition of 0–2 mol % Zr. On the other hand, the nonlinear coefficient α prior to electrical degradation changed very little on the addition of both Y and Zr. With the addition of approximately 1 mol% Zr, the leakage current decreased with increasing amount of Y added. A ZnO varistor with a varistor voltage of approximately 600 V/m, a low leakage current, and excellent resistance to electrical degradation was fabricated by adding approximately 2 mol% Y and approximately 1 mol% Zr.

Binary HfO2: SiO2 used as High-k Gate Oxide Material in Combinatorial Material Library Method

2005 ◽  
Vol 894 ◽  
Author(s):  
Wen-Hsuan Chao ◽  
Lih-Ping Wang ◽  
Shu-Huei Wang ◽  
Tien-Heng Huang ◽  
Ren-Jen Wu ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Leakage Current ◽  
Structural Characteristics ◽  
Rf Sputtering ◽  
Oxide Semiconductor ◽  
Oxide Material ◽  
Gate Oxides ◽  
Low Leakage ◽  
Low Leakage Current

AbstractHafnium silicates (HfO2:SiO2, HSO) have recently attracted much interest in the fields of fundamental science and technology because they have high dielectric constant and low leakage current. The structure and properties of HSO gate oxides were studied using a combinatorial continuous-compositional-spread method. HSO material libraries were synthesized on a 4-inch wafer at room temperature and at 200°C using a custom-built radio-frequency (RF) sputtering system. The electrical properties of HSO material libraries were measured using metal-oxide-semiconductor structure. X-ray diffraction (XRD) was utilized to characterize the structure and compositions of HSO material libraries. The effects of sputtering conditions on the properties of the HSO gate oxides were investigated. The dielectrics constants (εr) of HSO material libraries treated with rapid thermal annealing (600°C/1min/N2) were in the range 5∼23, as determined by C-V measurement, and the dielectric constant was observed to increase with HfO2 content. The I-V relations of the HSO material libraries indicate that the leakage current decreases as the amount of Si in the HSO films increases. The structural characteristics of HSO films with RTA treatment (1000°C/10sec/N2) varied from the amorphous to the crystalline state (tetragonal and monoclinic phase), according to the composition of material libraries. The correlation among the electrical properties, the composition and the crystal structure of the HSO films is discussed.

High nonlinearity and low leakage current SnO2 varistor ceramics by co-doping with yttrium and tantalum

2021 ◽  
Vol 285 ◽  
pp. 129120
Author(s):  
Wenxin Liang ◽  
Hongfeng Zhao ◽  
Xiaoji Meng ◽  
Shaohua Fan ◽  
Qingyun Xie
Keyword(s):  
Leakage Current ◽  
Co Doping ◽  
High Nonlinearity ◽  
Low Leakage ◽  
Low Leakage Current

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Barium Zirconate Nickelate as the Gate Dielectric for Low-Leakage Current Organic Transistors

2018 ◽  
Vol 65 (2) ◽  
pp. 680-686 ◽  
Author(s):  
Cheng-Jung Lee ◽  
Ke-Jing Lee ◽  
Yu-Chi Chang ◽  
Li-Wen Wang ◽  
Der-Wei Chou ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectric ◽  
Organic Transistors ◽  
Barium Zirconate ◽  
Low Leakage ◽  
Low Leakage Current

High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

2021 ◽  
Vol 15 (1) ◽  
pp. 016501
Author(s):  
Fumio Otsuka ◽  
Hironobu Miyamoto ◽  
Akio Takatsuka ◽  
Shinji Kunori ◽  
Kohei Sasaki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diodes ◽  
Wafer Level ◽  
Current Ratio ◽  
Field Plate ◽  
Low Leakage ◽  
Large Size ◽  
Forward Current ◽  
Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

Sign in / Sign up

Export Citation Format

Share Document