The Study of Surface Energy, Electrical Properties and Platelet Adhesion Behavior of a-C/a-CN Films Synthesized by PIII-D

2007 ◽  
Vol 330-332 ◽  
pp. 573-576
Author(s):  
Feng Wen ◽  
Nan Huang ◽  
Hong Sun ◽  
An Sha Zhao ◽  
Jin Wang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Energy ◽  
Room Temperature ◽  
Platelet Adhesion ◽  
Laser Source ◽  
Adhesion Behavior ◽  
Hall Effects ◽  
Type Semiconductor ◽  
Plasma Immersion Ion Implantation ◽  
Deposited Films

Amorphous carbon (a-C) and carbon nitrogen (a-CN) films were synthesized using plasma immersion ion implantation and deposition (PIII-D) under different N2 flow at room temperature (R.T.). Lifshitz-van der Waals/acid-base approach (LW-AB) was introduced in order to study films’ surface energy deeply. The results showed that the capability of the surface of the film on receive electron changed with N2 flow, which effected platelet adhesion of film strongly. Hall effects tests were employed to characterize the electrical properties of the films. The results showed that the as-deposited films exhibited n-type semiconductor characteristic, and carrier concentration of the films decreased with N2 flow increasing. Raman spectra with 514nm laser-source were employed to analyze the structural of the films.

Structural Dependence of Electrical Conductivity of thin Tellurium Films

1973 ◽  
Vol 31 ◽  
pp. 52-53
Author(s):  
Mumtaz A. Dinno ◽  
Manuel Schwartz ◽  
Beverly Giammara
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Room Temperature ◽  
Extensive Study ◽  
Structural Studies ◽  
Nucleation Sites ◽  
Electron Transport Properties ◽  
Deposited Films

Capers and White made an extensive study of the growth of tellurium thin films deposited on different substrate materials but did not measure the electrical properties of the deposited films. Berryman studied the effects of film thickness, deposition rate, and substrate temperature on the electrical properties but there is no evidence that these results were correlated with structural studies. Dutton presented a method for growing large grains using a gold monolayer as nucleation sites and for these special films related electron transport properties with structure. The present study undertakes the determination of conductivity over a range of thicknesses extending from 350 Å to 2800 Å on a substrate initially at room temperature, for both annealed and nonannealed films. In addition, some work was done with quenched and heated substrates at 700 Å thickness.

Redox-Inactive CO2 Determines Atmospheric Stability of Electrical Properties of ZnO Nanowire Devices through a Room-Temperature Surface Reaction

2019 ◽  
Vol 11 (43) ◽  
pp. 40260-40266
Author(s):  
Kentaro Nakamura ◽  
Tsunaki Takahashi ◽  
Takuro Hosomi ◽  
Takehito Seki ◽  
Masaki Kanai ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Surface Reaction ◽  
Atmospheric Stability ◽  
Zno Nanowire ◽  
Temperature Surface

Room temperature AC electrical properties of polypyrrole/chromium oxide composite

2020 ◽  
Author(s):  
N. Sasidhar ◽  
T. Chandrashekar ◽  
B. Chethan ◽  
Y. T. Ravikiran ◽  
R. Megha
Keyword(s):  
Electrical Properties ◽  
Chromium Oxide ◽  
Room Temperature ◽  
Oxide Composite ◽  
Ac Electrical Properties

Electrical properties of ZnO-based photodetector prepared by room temperature DC unbalanced magnetron sputtering

2016 ◽  
Author(s):  
Eka Nurfani ◽  
Angga Virdian ◽  
Robi Kurniawan ◽  
Shibghatullah Muhammady ◽  
Inge M. Sutjahja ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Unbalanced Magnetron Sputtering ◽  
Unbalanced Magnetron

The Study of p-n and Schottky Junction for Magnetodiode

2011 ◽  
Vol 378-379 ◽  
pp. 663-667 ◽  
Author(s):  
Toempong Phetchakul ◽  
Wittaya Luanatikomkul ◽  
Chana Leepattarapongpan ◽  
E. Chaowicharat ◽  
Putapon Pengpad ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electrical Properties ◽  
Simulation Model ◽  
Hall Effect ◽  
Schottky Junction ◽  
Field Sensitivity ◽  
Field Response ◽  
Type Semiconductor ◽  
Simulation Results ◽  
P Type

This paper presents the simulation model of Dual Magnetodiode and Dual Schottky Magnetodiode using Sentaurus TCAD to simulate the virtual structure of magneto device and apply Hall Effect to measure magnetic field response of the device. Firstly, we use the program to simulate the magnetodiode with p-type semiconductor and aluminum anode and measure electrical properties and magnetic field sensitivity. Simulation results show that sensitivity of Dual Schottky magnetodiode is higher than that of Dual magnetodiode.

Structure and Electrical Properties of Pulsed Laser Deposited Amorphous Carbon Nitride Thin Films

2002 ◽  
Vol 750 ◽  
Author(s):  
Yoshifumi Aoi ◽  
Kojiro Ono ◽  
Kunio Sakurada ◽  
Eiji Kamijo
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Pulsed Laser ◽  
Film Surface ◽  
Input Power ◽  
Localized States ◽  
Active Nitrogen ◽  
Deposited Films

ABSTRACTAmorphous CNx thin films were deposited by pulsed laser deposition (PLD) combined with a nitrogen rf radical beam source which supplies active nitrogen species to the growing film surface. The deposited films were characterized by X-ray photoelectron spectroscopy (XPS), Raman scattering, and Fourier transform infrared (FTIR) spectroscopy. Nitrogen content of the deposited films increased with increasing rf input power and N2 pressure in the PLD chamber. The maximum N/C ratio 0.23 was obtained at 400 W of rf input power and 1.3 Pa. XPS N 1s spectra shows the existence of several bonding structures in the deposited films. Electrical properties of the deposited films were investigated. The electrical conductivity decreased with increasing N/C atomic ratio. Temperature dependence of electrical conductivity measurements indicated that electronic conduction occurred by variable-range hopping between p electron localized states.

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