Highly Sensitive H2 Sensors Based on Pd- and PdO-Decorated TiO2 Thin Films at Low-Temperature Operation

2016 ◽  
Vol 675-676 ◽  
pp. 277-280 ◽  
Author(s):  
Benjarong Samransuksamer ◽  
Tula Jutarosaga ◽  
Mati Horprathum ◽  
Anurat Wisitsoraat ◽  
Pitak Eiamchai ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Chemical Element ◽  
Operating Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Highly Sensitive ◽  
Dc Reactive Magnetron Sputtering ◽  
Very High

Abstract In this work, the low-temperature H2-sensing properties of palladium (Pd) and palladium oxide (PdO) nanoparticles decorated titanium dioxide (TiO2) thin film were studied. The TiO2 thin films were prepared by the dc reactive magnetron sputtering. The Pd and PdO nanoparticles were sputtered on the top surface of TiO2 surface in order to enhance the sensitivity to the H2 gas. Morphologies, crystal structures, and chemical element of the examiner samples were investigated by the field-emission scanning electron microscopy (FE-SEM), grazing-incident X-ray diffraction (GIXRD), and X-ray photoelectron spectroscopy (XPS), respectively. The effects of the Pd and PdO nanoparticles on H2-sensing performance of TiO2 were investigated over a low concentration range of 150-3,000 ppm H2 at 50-250°C-operating temperatures. This result exhibited that the PdO decorated on TiO2 surface showed very high response to H2 at a low operating temperature of 150°C.

scholarly journals Sputtered SnO2/ZnO Heterostructures for Improved NO2 Gas Sensing Properties

Chemosensors ◽  
2020 ◽  
Vol 8 (3) ◽  
pp. 67 ◽  
Author(s):  
Bharat Sharma ◽  
Ashutosh Sharma ◽  
Monika Joshi ◽  
Jae-ha Myung
Keyword(s):  
Photoelectron Spectroscopy ◽  
Gas Sensing ◽  
Operating Temperature ◽  
X Ray Diffraction ◽  
X Ray ◽  
Response Recovery ◽  
No2 Gas Sensor ◽  
Highly Sensitive ◽  
Gas Sensing Properties ◽  
Gas Response

A highly sensitive and selective NO2 gas sensor dependent on SnO2/ZnO heterostructures was fabricated using a sputtering process. The SnO2/ZnO heterostructure thin film samples were characterized by field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD), Energy-dispersive X-ray spectroscopy (EDS), and X-ray photoelectron spectroscopy (XPS). Sensors fabricated with heterostructures attained higher gas response (S = 66.9) and quicker response-recovery (20 s, 45 s) characteristics at 100 °C operating temperature towards 100 ppm NO2 gas efficiently in comparison to sensors based on their mono-counterparts. The selectivity and stability of SnO2/ZnO heterostructures were studied. The more desirable sensing mechanism of SnO2/ZnO heterostructures towards NO2 was described in detail.

scholarly journals Структура и фотоэлектрические свойства пленок PbSe, осажденных в присутствии аскорбиновой кислоты

2020 ◽  
Vol 54 (10) ◽  
pp. 1004
Author(s):  
Л.Н. Маскаева ◽  
В.М. Юрк ◽  
В.Ф. Марков ◽  
М.В. Кузнецов ◽  
В.И. Bоронин ◽  
...  
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
X Ray ◽  
Optical Band Gaps ◽  
Photoelectric Properties ◽  
Highly Sensitive ◽  
Deposited Films

PbSe thin films chemically deposited using ascorbic acid as an antioxidant for selenourea were examined by X -ray diffraction (XRD), scanning electron microscopy (SEM) with X -ray microanalysis (EDX) and X -ray photoelectron spectroscopy (XPS). Influence of annealing temperature on chemical and phase composition, lattice parameters, surface morphology and photoelectric properties were studied. Determined that PbSe thin films contain dopant phase PbSeO3, PbSeO4, PbI2 after annealing at 633−683K. The direct and indirect optical band gaps Eg layers were observed. It has been shown that the deposited films are comparable with known commercial samples by their threshold photoelectric characteristics and can be used to create highly sensitive IR detectors.

scholarly journals A novel and potentially scalable CVD-based route towards SnO2:Mo thin films as transparent conducting oxides

2021 ◽  
Author(s):  
Tianlei Ma ◽  
Marek Nikiel ◽  
Andrew G. Thomas ◽  
Mohamed Missous ◽  
David J. Lewis
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Mixed Valence ◽  
Chemical Vapour ◽  
X Ray Diffraction ◽  
X Ray ◽  
Conducting Oxides ◽  
Valence States ◽  
3 Omega ◽  
First Time

AbstractIn this report, we prepared transparent and conducting undoped and molybdenum-doped tin oxide (Mo–SnO2) thin films by aerosol-assisted chemical vapour deposition (AACVD). The relationship between the precursor concentration in the feed and in the resulting films was studied by energy-dispersive X-ray spectroscopy, suggesting that the efficiency of doping is quantitative and that this method could potentially impart exquisite control over dopant levels. All SnO2 films were in tetragonal structure as confirmed by powder X-ray diffraction measurements. X-ray photoelectron spectroscopy characterisation indicated for the first time that Mo ions were in mixed valence states of Mo(VI) and Mo(V) on the surface. Incorporation of Mo6+ resulted in the lowest resistivity of $$7.3 \times 10^{{ - 3}} \Omega \,{\text{cm}}$$ 7.3 × 10 - 3 Ω cm , compared to pure SnO2 films with resistivities of $$4.3\left( 0 \right) \times 10^{{ - 2}} \Omega \,{\text{cm}}$$ 4.3 0 × 10 - 2 Ω cm . Meanwhile, a high transmittance of 83% in the visible light range was also acquired. This work presents a comprehensive investigation into impact of Mo doping on SnO2 films synthesised by AACVD for the first time and establishes the potential for scalable deposition of SnO2:Mo thin films in TCO manufacturing. Graphical abstract

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Optical properties of anatase TiO2 films modified by N ion implantation

2012 ◽  
Vol 90 (1) ◽  
pp. 39-43 ◽  
Author(s):  
X. Xiang ◽  
D. Chang ◽  
Y. Jiang ◽  
C.M. Liu ◽  
X.T. Zu
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Radio Frequency Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Atomic Force ◽  
Light Region ◽  
Uv Visible ◽  
Substrate Temperatures

Anatase TiO2 thin films are deposited on K9 glass samples at different substrate temperatures by radio frequency magnetron sputtering. N ion implantation is performed in the as-deposited TiO2 thin films at ion fluences of 5 × 1016, 1 × 1017, and 5 × 1017 ions/cm2. X-ray diffraction, atomic force microscope, X-ray photoelectron spectroscopy (XPS), and UV–visible spectrophotometer are used to characterize the films. With increasing N ion fluences, the absorption edges of anatase TiO2 films shift to longer wavelengths and the absorbance increases in the visible light region. XPS results show that the red shift of TiO2 films is due to the formation of N–Ti–O compounds. As a result, photoactivity is enhanced with increasing N ion fluence.

scholarly journals Elaboration of nitride thin films by reactive sputtering

2006 ◽  
Vol 59 (2) ◽  
pp. 225-232 ◽  
Author(s):  
Pierre Yves Jouan ◽  
Arnaud Tricoteaux ◽  
Nicolas Horny
Keyword(s):  
Thin Films ◽  
Compressive Stress ◽  
Bias Voltage ◽  
Substrate Surface ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
A Value ◽  
Dc Reactive Magnetron Sputtering ◽  
Nitrogen Contents

The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-transform infrared spectroscopy, X-ray diffraction and secondary electron microscopy. Dense and transparent AlN layers were obtained at high deposition rates. These films have a (002) orientation whatever the nitrogen content in the discharge, but the best crystallised ones are obtained at low value (10%). A linear relationship was observed between the AlN lattice parameter "c" (perpendicular to the substrate surface) and the in-plane compressive stress. Applying an RF bias to the substrate leads to a (100) texture, and films become amorphous. Moreover, the film's compressive stress increases up to a value of 8GPa before decreasing slowly as the bias voltage increases.

scholarly journals Nanosized V-Ce Oxides Supported on TiO2 as a Superior Catalyst for the Selective Catalytic Reduction of NO

Catalysts ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 202
Author(s):  
Long Lu ◽  
Xueman Wang ◽  
Chunhua Hu ◽  
Ying Liu ◽  
Xiongbo Chen ◽  
...  
Keyword(s):  
Low Temperature ◽  
Selective Catalytic Reduction ◽  
Photoelectron Spectroscopy ◽  
Catalytic Reduction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Redox Capacity ◽  
Scr Of No ◽  
Temperature Programmed

Nanosized V-Ce oxides supported on TiO2 (VCT) were prepared and utilized in the low-temperature selective catalytic reduction (SCR) of NO with NH3. Compared with the other V-Ce oxides-based catalysts supported on Al2O3, ZrO2, and ZSM-5, VCT showed the best SCR activity in a low-temperature range. The NOx conversion of 90% could be achieved at 220 °C. Characterizations including X-ray diffraction (XRD), scanning election micrograph (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), temperature-programmed desorption with NH3 (NH3-TPD), and temperature-programmed reduction with H2 (H2-TPR) showed that V1.05Ce1/TiO2 exhibited a good dispersion of V2O5, enrichment of surface Ce3+ and chemical-absorbed oxygen, and excellent redox capacity and acidity, which resulted in the best SCR performance at low temperature.

scholarly journals SnO2/TiO2 Thin Film n-n Heterostructures of Improved Sensitivity to NO2

Sensors ◽  
2020 ◽  
Vol 20 (23) ◽  
pp. 6830
Author(s):  
Piotr Nowak ◽  
Wojciech Maziarz ◽  
Artur Rydosz ◽  
Kazimierz Kowalski ◽  
Magdalena Ziąbka ◽  
...  
Keyword(s):  
Thin Film ◽  
Operating Temperature ◽  
Incidence Geometry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Langmuir Blodgett ◽  
Response Recovery ◽  
Low Concentrations ◽  
Highly Sensitive ◽  
Recovery Times

Thin-film n-n nanoheterostructures of SnO2/TiO2, highly sensitive to NO2, were obtained in a two-step process: (i) magnetron sputtering, MS followed by (ii) Langmuir-Blodgett, L–B, technique. Thick (200 nm) SnO2 base layers were deposited by MS and subsequently overcoated with a thin and discontinuous TiO2 film by means of L–B. Rutile nanopowder spread over the ethanol/chloroform/water formed a suspension, which was used as a source in L–B method. The morphology, crystallographic and electronic properties of the prepared sensors were studied by scanning electron microscopy, SEM, X-ray diffraction, XRD in glancing incidence geometry, GID, X-ray photoemission spectroscopy, XPS, and uv-vis-nir spectrophotometry, respectively. It was found that amorphous SnO2 films responded to relatively low concentrations of NO2 of about 200 ppb. A change of more than two orders of magnitude in the electrical resistivity upon exposure to NO2 was further enhanced in SnO2/TiO2 n-n nanoheterostructures. The best sensor responses RNO2/R0 were obtained at the lowest operating temperatures of about 120 °C, which is typical for nanomaterials. Response (recovery) times to 400 ppb NO2 were determined as a function of the operating temperature and indicated a significant decrease from 62 (42) s at 123 °C to 12 (19) s at 385 °C A much smaller sensitivity to H2 was observed, which might be advantageous for selective detection of nitrogen oxides. The influence of humidity on the NO2 response was demonstrated to be significantly below 150 °C and systematically decreased upon increase in the operating temperature up to 400 °C.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

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