A Study on (K, Na) NbO3 Thin Films with Optimized Layer: Effect on Physical and Electrical Properties

2016 ◽  
Vol 694 ◽  
pp. 120-124 ◽  
Author(s):  
Nurul Azuwa Azmi ◽  
Umar Al Amani Azlan ◽  
Maziati Akmal Mohd Hatta ◽  
Mohd Asyadi' Azam Mohd Abid ◽  
Mohd Warikh Ab Rashid
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Inhomogeneous Distribution ◽  
X Ray ◽  
Number Of Layers ◽  
Layer Deposition ◽  
Layer Effect ◽  
Gel Technique ◽  
Scanning Electron

(K, Na)NbO3 (KNN) thin films were prepared by sol-gel technique. Spin coating deposition and rapid thermal annealing (RTP) process were applied to produce the KNN thin films. The films obtained demonstrated that highly crystallographic orientation was produced at five layer deposition with increase (preferred orientation) peak at (1 1 1). The thickness of five layers thin films observed by field emission scanning electron microscopy (FE-SEM) was determined to be ~200nm. However, the inhomogeneous distribution of KNN particles was detected in KNN thin films. The distribution of KNN elements was confirmed by energy-dispersive X-ray (EDX) spectra. Improvement was observed in resistivity (2.71-7.81x106 Ω.cm) and dielectric loss (0.35%-0.21%) following the increasing number of layers.

Enhanced Electrochromic Performance of Sol-Gel Derived WO3 Thin Films Assisted by Electrospun PVA Nanofibers

2012 ◽  
Vol 528 ◽  
pp. 249-253
Author(s):  
K. Paipitak ◽  
J. Rattanarak ◽  
D. Pakdeeyingyong ◽  
W. Techitdheera ◽  
S. Porntheeraphat ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Emission Spectroscopy ◽  
Tungsten Powder ◽  
Sol Gel ◽  
Xrd Analysis ◽  
X Ray ◽  
Electrochromic Properties ◽  
Wo3 Thin Films ◽  
Scanning Electron

The paper describes the results obtained on the enhanced electrochromic performance of Tungsten oxide (WO3) thin films assisted by electrospun PVA nanofibers. WO3 was fabricated by spin coating technique with tungsten powder as starting precursor. The effect of electrospun-PVA nanofibers layer on structural, chemical composition, surface morphology and electrochromic properties of the films were characterized by X-ray diffractometer (XRD), X-ray photo-emission spectroscopy (XPS), scanning electron microscope (SEM) and UV-VIS spectrophotometer. The XRD analysis suggested that the crystalline of WO3 can be identified as a monoclinic WO3 structure. XPS investigations also confirmed the existence of characteristic peaks of W. The significant enhancement of electrochromic properties of the films is achieved by additive electrospun-PVA nanofiber layer.

scholarly journals Physical Properties of Different Thicknesses ZnO Thin Films Prepared via Sol-gel Spin Coating Technique

2021 ◽  
Vol 18 (2) ◽  
pp. 147-160
Author(s):  
Rohanieza Abdul Rahman ◽  
◽  
Muhammad AlHadi Zulkefle ◽  
Sukreen Hana Herman ◽  
Rosalena Irma Alip ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Deposition Process ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Number Of Layers ◽  
Deposited Film

This paper presents the investigation of the thickness of the ZnO thin films by varying the number of deposition layers during the spin coating deposition process. ZnO thin films were deposited with a different number of layers (ranging from 1, 3, and 5), and the main purpose of this study is to explore the effect of the thickness on the properties of ZnO thin films. The deposited thin films were characterised using field emission scanning electron microscope, surface profilometer, and X-ray diffraction. From the characterisation results, the morphology of the ZnO thin films changed significantly with the number of layers and their thickness value. As expected, the thickness increased as the number of layers increased. The crystalline quality of the deposited film improved as the thickness increased. A change in crystallographic orientation was also observed in which the thicker, thin films showed crystal growth in the (102) direction, whereas the thinner one was in the (101) direction. A slight increase in crystallite size for dominant orientation also was observed with the increase of film thickness.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

2010 ◽  
Vol 93-94 ◽  
pp. 231-234
Author(s):  
B. Hongthong ◽  
Satreerat K. Hodak ◽  
Sukkaneste Tungasmita
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Composition ◽  
Spin Coating ◽  
Phase Structure ◽  
Sol Gel ◽  
Cross Linking ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

scholarly journals Calcination Effect on Structural Trasformation of Barium Titanite Ferroelectric Ceramic by Sol-Gel Method

2019 ◽  
Vol 9 (1) ◽  
pp. 5893-5896
Keyword(s):  
Glacial Acetic Acid ◽  
Sol Gel ◽  
Ferroelectric Ceramic ◽  
Tetrabutyl Titanate ◽  
Chemical Modifier ◽  
Barium Acetate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gel Technique ◽  
Scanning Electron

High purity barium titanate BaTiO3 was successfully synthesized by using the sol-gel technique. Barium acetate Ba(CH3COO)2 and tetrabutyl titanate, Ti(C4H9O)4 was dissolved moderately in the solvent of glacial acetic acid and ethanol was added as the chemical modifier. The synthesized BaTiO3 nanoparticle was calcined at the temperature range of 700 ºC to 1100 ºC. The powders were further characterized by X-ray diffraction and scanning electron microscopy (SEM). Fined BaTiO3 powders result indicates the phase of tetragonal structures and high crystallites of BaTiO3. It was observed that the crystallinity and particle size of BaTiO3 is greatly influenced by the calcination temperature.

Effect of Dip-Coating Cycle on Some Physical Properties of Cu2NiSnS4 Thin Films for Photovoltaic Applications

2021 ◽  
Author(s):  
Ahmed ZITI ◽  
Bouchaib HARTITI ◽  
Amine BELAFHAILI ◽  
Hicham LABRIM ◽  
Salah FADILI ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Sol Gel ◽  
Dip Coating ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Uv Visible ◽  
The Impact ◽  
Scanning Electron

Abstract Quaternary semiconductor Cu2NiSnS4 thin film was made by the sol-gel method associated to dip-coating technique on ordinary glass substrates. In this paper, we have studied the impact of dip-coating cycle at different cycles: 4, 5 and 6 on the structural, compositional, morphological, optical and electrical characteristics. CNTS thin films have been analyzed by various characterization techniques including: X-ray diffractometer (XRD), Raman measurements, scanning electron microscope (SEM), energy dispersive X-ray spectroscope (EDS), UV-visible spectroscopy and four-point probe method. XRD spectra demonstrated the formation of cubic Cu2NiSnS4 with privileged orientation at (111) plane. Crystallite size of cubic CNTS thin films increase with from 6.30 to 9.52 with dip-coating cycle augmented. Raman scattering confirmed the existence of CNTS thin films by Raman vibrational mode positioned at 332 cm− 1. EDS investigations showed near-stoichiometry of CNTS sample deposited at 5 cycles. Scanning electron microscope showed uniform surface morphologies without any crack. UV-visible spectroscopy indicated that the optical absorption values are larger than 104 cm− 1, Estimated band gap energy of CNTS absorber layers decrease from 1.64 to 1.5 eV with dip-coating cycle increased. The electrical conductivity of CNTS thin films increase from 0.19 to 4.16 (Ω cm)-1. These characteristics are suitable for solar cells applications.

SiO2ZrO2 Thin Films as Low Temperature NO2 and O3 Sensors

2015 ◽  
Vol 1088 ◽  
pp. 81-85 ◽  
Author(s):  
T.N. Myasoedova ◽  
Victor V. Petrov ◽  
Nina K. Plugotarenko ◽  
Dmitriy V. Sergeenko ◽  
Galina Yalovega ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Low Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Operating Temperatures ◽  
Scanning Electron

Thin SiO2ZrO2films were prepared, up to 0.2 μm thick, by means of the sol–gel technology and characterized by a Scanning electron microscopy and X-ray diffraction. It is shown the presence of monoclinic, cubic and tetragonal phases of ZrO2in the SiO2matrix. The crystallites sizes depend on the annealing temperature of the film and amount to 35 and 56 nm for the films annealed at 773 and 973 K, respectively. The films resistance is rather sensitive to the presence of NO2and O3impurity in air at lower operating temperatures in the range of 30-60°C.

Thick PLZT Films Grown by Sol-gel for Optical Device Applications

1998 ◽  
Vol 541 ◽  
Author(s):  
M. Linnik ◽  
O. Wilson ◽  
A. Christou
Keyword(s):  
Electron Microscopy ◽  
Sol Gel ◽  
Phase Modulator ◽  
X Ray Diffraction ◽  
X Ray ◽  
Device Applications ◽  
Gel Technique ◽  
Scanning Electron

AbstractThe preparation and characterization of thick PLZT films for spatial phase modulator applications are reported. Films were fabricated on LSCO/LAO substrates by a sol-gel technique using multiple heat-treatment parameters. The crystal quality of PLZT 9/65/35 films was investigated by X-ray diffraction and scanning electron microscopy.

Spectroscopic and Morphological Investigation of Copper-Containing Nanocomposites

2015 ◽  
Vol 1091 ◽  
pp. 15-18 ◽  
Author(s):  
V.A. Shmatko ◽  
T.N. Myasoedova ◽  
G.E. Yalovega
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Grain Shape ◽  
Sol Gel ◽  
Oxide Phase ◽  
Morphological Investigation ◽  
X Ray ◽  
Gel Technique ◽  
Shape Changes ◽  
Scanning Electron

In the paper the SiO2CuOx and SiO2(CuOxSnOy) thin films were deposited from the alcoholic solutions employing the sol-gel technique. The films were characterized by means of SEM (scanning electron microscopy) and 2p x-ray photoelectron spectroscopy (XPS). The SEM studies found the grain shape changes from flower-like to regular shaped inorganic agglomerates as result of adding the SnCl4 into the sol. The X-ray photoelectron spectroscopy (XPS) studies showed the presence both CuO and CuO2 phases and formation of a double CuSiO3 oxide phase.

scholarly journals Preparation and Microstructure of acetate-based lead-free BSZT ferrolectric thin films using sol-gel technique

2019 ◽  
Vol 35 (1) ◽  
Author(s):  
Vu Thu Hien
Keyword(s):  
Thin Films ◽  
Conduction Mechanism ◽  
Lattice Structure ◽  
Sol Gel ◽  
Lead Free ◽  
Crystalline Lattice ◽  
Plane Symmetry ◽  
X Ray ◽  
Gel Technique ◽  
Current Behaviour

(Ba0.85Sr0.15)(Ti0.9Zr0.1)O3 (BSZT) lead-free ferroelectric thin films at the vicinity of the morphotropic phase boundary (MPB) were successfully deposited on Pt/Ti/SiO2/Si using a modified spin-coated sol-gel method. Microstructure and electrical properties of the thin film were studied. High resolution synchrotron X–ray powder diffraction (SXRD) combinied with Rietveld refinement revealed the samples crystalize in tetragonal perovskite structure with in-plane symmetry (c < a). Raman spectra also confirmed a tetragonal perovskite crystalline lattice structure. Polarisation studies demonstrate that BSZT films exhibit a rather high saturation polarisation of 22.25 µC cm−2. Leakage current behaviour was obtained and possible conduction mechanism is discussed.

Sign in / Sign up

Export Citation Format

Share Document