scholarly journals Preparation and Microstructure of acetate-based lead-free BSZT ferrolectric thin films using sol-gel technique

2019 ◽  
Vol 35 (1) ◽  
Author(s):  
Vu Thu Hien
Keyword(s):  
Thin Films ◽  
Conduction Mechanism ◽  
Lattice Structure ◽  
Sol Gel ◽  
Lead Free ◽  
Crystalline Lattice ◽  
Plane Symmetry ◽  
X Ray ◽  
Gel Technique ◽  
Current Behaviour

(Ba0.85Sr0.15)(Ti0.9Zr0.1)O3 (BSZT) lead-free ferroelectric thin films at the vicinity of the morphotropic phase boundary (MPB) were successfully deposited on Pt/Ti/SiO2/Si using a modified spin-coated sol-gel method. Microstructure and electrical properties of the thin film were studied. High resolution synchrotron X–ray powder diffraction (SXRD) combinied with Rietveld refinement revealed the samples crystalize in tetragonal perovskite structure with in-plane symmetry (c < a). Raman spectra also confirmed a tetragonal perovskite crystalline lattice structure. Polarisation studies demonstrate that BSZT films exhibit a rather high saturation polarisation of 22.25 µC cm−2. Leakage current behaviour was obtained and possible conduction mechanism is discussed.

Characterization of Sol-Gel Derived (Pb,Ba)(Zr,Ti,Nb)O3 Thin Films for Optical Waveguide Development

1994 ◽  
Vol 343 ◽  
Author(s):  
P. F. Baude ◽  
J. S. Wright ◽  
C. Ye ◽  
L. F. Francis ◽  
D. L. Polla
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Solution Preparation ◽  
Transmission Measurements ◽  
Gel Technique

ABSTRACT(PbBa)(ZrTiNb)03 thin films and powders have been prepared using the sol-gel technique. Solutions were synthesized in 2-methoxyethanol based upon our previous PZT solution preparation. Three different approaches were used for incorporating barium into PZT alkoxide solutions. Thermal analysis and x-ray diffraction results indicated that barium methoxypropoxide gave the best results. PBZTN (71% Pb and 71% Zr) was deposited onto sapphire substrates as well as oxidized silicon substrates. Optical transmission measurements showed greater than 80% transmission for wavelengths longer than 400 nm. Films with thickness of 3000 Å on sapphire exhibited a refractive index of 2.19 at λ=633 nm.

Properties of SiO2CuOx Films for Nitrogen Dioxide Detection

2013 ◽  
Vol 834-836 ◽  
pp. 112-116 ◽  
Author(s):  
Tatiana Myasoedova ◽  
G.E. Yalovega ◽  
V.V. Petrov ◽  
O.V. Zabluda ◽  
V.A. Shmatko ◽  
...  
Keyword(s):  
Thin Films ◽  
Nitrogen Dioxide ◽  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
Structure And Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gel Technique ◽  
Operating Temperatures

SiOxCuOythin films were prepared by the deposition on to the Si/SiO2substrates from the alcoholic solutions employing the sol-gel technique. The various analytic techniques were applied to characterize structure and properties of the films under study . The both X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) studies showed the presence CuO as well as CuO2phases and formation of a dual-oxide CuSiO3with the average crystallites sizes of 35-50 nm. The conductance of the films was rather sensitive to the presence of 1-20 ppm NO2concentration at the operating temperatures in the range of 20–200◦C.

A Study on (K, Na) NbO3 Thin Films with Optimized Layer: Effect on Physical and Electrical Properties

2016 ◽  
Vol 694 ◽  
pp. 120-124 ◽  
Author(s):  
Nurul Azuwa Azmi ◽  
Umar Al Amani Azlan ◽  
Maziati Akmal Mohd Hatta ◽  
Mohd Asyadi' Azam Mohd Abid ◽  
Mohd Warikh Ab Rashid
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Sol Gel ◽  
Inhomogeneous Distribution ◽  
X Ray ◽  
Number Of Layers ◽  
Layer Deposition ◽  
Layer Effect ◽  
Gel Technique ◽  
Scanning Electron

(K, Na)NbO3 (KNN) thin films were prepared by sol-gel technique. Spin coating deposition and rapid thermal annealing (RTP) process were applied to produce the KNN thin films. The films obtained demonstrated that highly crystallographic orientation was produced at five layer deposition with increase (preferred orientation) peak at (1 1 1). The thickness of five layers thin films observed by field emission scanning electron microscopy (FE-SEM) was determined to be ~200nm. However, the inhomogeneous distribution of KNN particles was detected in KNN thin films. The distribution of KNN elements was confirmed by energy-dispersive X-ray (EDX) spectra. Improvement was observed in resistivity (2.71-7.81x106 Ω.cm) and dielectric loss (0.35%-0.21%) following the increasing number of layers.

scholarly journals X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY ON HIGH-ELECTRON-MOBILITY GALLIUM AND HYDROGEN CO-DOPED ZINC OXIDE THIN FILMS

2018 ◽  
Vol 56 (1A) ◽  
pp. 93
Author(s):  
Anh Thanh Tuan Pham
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Hydrogen Plasma ◽  
Crystalline Lattice ◽  
High Electron ◽  
X Ray ◽  
Doped Zno ◽  
Co Doped

In this study, gallium and hydrogen co-doped ZnO (HGZO) thin films were investigated. The films were deposited by sputtering from Ga-doped ZnO (GZO) ceramic target in hydrogen and argon plasma. The as-deposited HGZO films possess enhanced electron mobility of 48.6 cm2/Vs as compared to that of 39.4 cm2/Vs of GZO films, sputtered from the same target. Because of insignificant variation in crystallinity, this improvement is attributed to roles of hydrogen in crystalline lattice structure of the films. X-ray photoelectron spectroscopy (XPS) is employed as an essential technique for quantitative analyses and chemical binding states of films constituent elements. The roles of hydrogen are clarified through the binding states of Zn 2p, O 1s and Ga 3d. Obtained results suggest that the films are deposited more effectively in hydrogen plasma. Some point defects such as oxygen vacancies (VO), dangling bonds can be passivated in form of H+VOHO and O–H bonds. As a result, the reduction of scattering centers is indicated as a reason for the mobility improvement of the HGZO films.

scholarly journals A Study on Optical Waveguide Application of Lanthanum III Oxide (LA O ) Thin Film Prepared 2 3 by Sol-gel Method.

2015 ◽  
Vol 6 ◽  
pp. 112-123
Author(s):  
A A Akombor ◽  
M D Tyona ◽  
J SA Adelabu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Raman Spectroscopy ◽  
Optical Waveguide ◽  
Lanthanum Oxide ◽  
Sol Gel ◽  
Measurement Techniques ◽  
Single Layer ◽  
X Ray ◽  
Gel Technique

Optogeometric properties of La 2 O 3 (Lanthanum Oxide) thin films prepared by sol-gel technique have been investigated. Characterization was derived by M-line spectroscopy, X-ray diffractometry and waveguide Raman Spectroscopy. M-line spectroscopy measurements revealed a refractive index of 1.592±0.001 on Pyrex substrate for a wavelength of 543.4nm and thin film thickness of 850nm and 1.589±0.001 on silicon wafer and thickness of single layer is between 40 and 60nm. X-ray diffractrometry has shown that the film has monoclinic structure. Waveguide Raman Spectroscopy has revealed a mixture of La 2 O 3 and La 2 O 2 CO 3 (Lanthanum Oxide Carbonate) which are mainly nanocrystalline and polycrystalline respectively. The research has shown that the La 2 O 3 thin films produced can be used as a planar optical waveguide. The results obtained are comparable with the works of other scientists using different measurement techniques.

ENHANCED STRUCTURAL AND ELECTRICAL PROPERTIES OF LEAD-FREE Y-DOPED (K, Na) NbO3 THIN FILMS

2015 ◽  
Vol 77 (21) ◽  
Author(s):  
Maziati Akmal ◽  
Umar Al-Amani ◽  
Mohd Warikh ◽  
Nurul Azuwa
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Lattice Structure ◽  
Sol Gel ◽  
Small Shift ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Gel Technique ◽  
A Site ◽  
Different Content

Yttrium- doped KNN thin films were grown on Si substrates using the sol-gel technique. The profound effects of Yttrium with different content element (mol % = 0, 0.1, 0.3, 0.5, 0.7 and 0.9) on the structural and electrical properties of KNN films were analyzed. The doped samples demonstrated a mainly uniform and homogenous microstructure with grain size less than 100 nm. The existence of Y Kα line shown in EDX spectrum confirmed the presence of Y-dopant in KNN based-compound. Small shift position of the Raman peaks indicated that Y incorporated on the interstitial A-site while broaden FWHM ascribed that Y preferably enters B-site lattice at high dopant concentration. The enhanced electrical resistivity at 0.5 mol % Y suggested that more conduction electrons were formed in KNN lattice structure.

EFFECTS OF La DOPING ON FERROELECTRIC PROPERTIES OF CaBi4Ti4O15 THIN FILMS

2007 ◽  
Vol 14 (02) ◽  
pp. 277-281
Author(s):  
YANXIA DING ◽  
GUANGDA HU ◽  
SUHUA FAN
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Single Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
La Doping ◽  
Gel Technique ◽  
A Site

La modified CBTi ( CLBTi ) thin films were prepared on Pt/Ti/SiO 2/ Si (100) substrates by a sol–gel technique. X-ray diffraction analysis showed that single phase of CLBTi thin films were obtained. Their crystallization and hysteresis behavior were strongly dependent on the La contents. An increase of 2Pr as well as a decrease of 2Ec with the increase of La concentration were observed. The leakage properties of CBTi thin films were found to be improved by the La doping. The results were discussed with respect to the effects of La 3+ substitution at perovskite A-site.

Raman spectroscopy and x-ray diffraction study of PbTiO3 thin films prepared by sol–gel technique

1999 ◽  
Vol 85 (4) ◽  
pp. 2146-2150 ◽  
Author(s):  
Ai-Dong Li ◽  
Di Wu ◽  
Chuan-Zhen Ge ◽  
Peng Lü ◽  
Wen-Hui Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Diffraction Study ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gel Technique

Exploring the characteristics of the nickel oxide nanoparticles via Sol - gel method

2020 ◽  
Vol 3 (3) ◽  
Author(s):  
Jothi M ◽  
Sowmiya K
Keyword(s):  
Nickel Oxide ◽  
Ph Value ◽  
Lattice Structure ◽  
Sol Gel ◽  
Systematic Change ◽  
Average Crystalline Size ◽  
Nio Nanoparticles ◽  
Nickel Oxide Nanoparticles ◽  
X Ray ◽  
Vis Spectroscopy

Nickel Oxide (NiO) is an important transition metal oxide with cubic lattice structure. NiO is thermally stable that is suitable for tremendous applications in the field of optic, ceramic,glass, electro-chromic coatings, plastics, textiles, nanowires, nanofibers, electronics,energy technology, bio-medicine, magnetism and so on. In this present study, NiO nanoparticles were successfully synthesized by sol-gel technique. Nano-sols were prepared by dissolving Nickel-Chloride [NiCl2.6H2O] in NaOH solvent and were converted into nano structured gel on precipitation. A systematic change in preparation parameters like calcination temperature, time, pH value has been noticed in order to predict the influence on crystallite size. Then the prepared samples were characterized by the X-ray Diffraction Spectroscopic (XRD), UV-VIS Spectroscopy, Fourier Transform Infra-Red Spectroscopy (FTIR), Energy Dispersive X-ray Spectroscopy (EDX), Scanning Electron Microscopy (SEM) and Particle Size Analyzer (PSA). From XRD, the average crystalline-size has been calculated by Debye-Scherrer Equation and it was found to be 12.17 nm and the band gap energy of Nickel oxide (NiO) from UV studies reveals around 3.85 eV. Further, EDX and FTIR studies, confirm the presences of NiO nanoparticles. The SEM study exhibits the spherical like morphology of Nickel oxide (NiO). Further from PSA, the mean value of NiO nanoparticles has been determined.

Effect of Annealing temperature on the Structural and Magnetic Properties of TbxY3-xFe5O12(x = 0.0, 1.0, 2.0) Thin Films Prepared by Sol-Gel Process

2012 ◽  
Vol 501 ◽  
pp. 236-241 ◽  
Author(s):  
Ftema W. Aldbea ◽  
Noor Bahyah Ibrahim ◽  
Mustafa Hj. Abdullah ◽  
Ramadan E. Shaiboub
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Vibrating Sample Magnetometer ◽  
X Ray ◽  
Garnet Phase ◽  
Sol Gel Process ◽  
Amorphous Structures

Thin films nanoparticles TbxY3-xFe5O12 (x=0.0, 1.0, 2.0) were prepared by the sol-gel process followed by annealing process at various annealing temperatures of 700° C, 800° C and 900° C in air for 2 h. The results obtained from X-ray diffractometer (XRD) show that the films annealed below 900°C exhibit peaks of garnet mixed with small amounts of YFeO3 and Fe2O3. Pure garnet phase has been detected in the films annealed at 900°C. Before annealing the films show amorphous structures. The particles sizes measurement using the field emission scanning electron microscope (FE-SEM) showed that the particles sizes increased as the annealing temperature increased. The magnetic properties were measured at room temperature using the vibrating sample magnetometer (VSM). The saturation magnetization (Ms) of the films also increased with the annealing temperature. However, different behavior of coercivity (Hc) has been observed as the annealing temperature was increased.

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