DYNAMIC PERFORMANCE OF MCTs UNDER INDUCTIVE LOAD CONDITIONS

1994 ◽  
Vol 04 (04) ◽  
pp. 471-485
Author(s):  
MARIAN K. KAZIMIERCZUK ◽  
NANDAKUMAR THIRUNARAYAN
Keyword(s):  
Dynamic Performance ◽  
Anode Current ◽  
Cathode Voltage ◽  
Inductive Load ◽  
Drive Voltage ◽  
Turn On ◽  
Test Circuit ◽  
Output Capacitance ◽  
Off Time ◽  
Measured Input

PMOS-controlled thyristors (PMCTs) were tested in a single-switch configuration under inductive-load hard-switching conditions. The transient current and voltage waveforms during the turn-on and turn-off transitions were observed for 50 A/1000 V devices. The experimental waveforms are given for the anode current, the inductor current, the anode-to-cathode voltage, and the gate-to-anode drive voltage. These waveforms were obtained for periodic gate drive voltage at 6.5 kHz. The test circuit was operated at power levels of up to 370 W. The measured turn-on time was 0.255 μs at an anode-to-cathode voltage of 270 V and the measured turn-off time was 1.6 μs at an anode current of 16 A. The measured storage time was 1 μs. The measured input capacitance of the MCT was 13.5 nF and the output capacitance was 66.7 nF. It was found that the input and output capacitances of PMCTs are approximately linear.

A High Precision IGBT Macro-Model for Switching Simulations

2016 ◽  
Vol 698 ◽  
pp. 109-117
Author(s):  
Masaki Kazumi ◽  
Hitoshi Aoki ◽  
Yukiko Arai ◽  
Shunichiro Todoroki ◽  
Takuya Totsuka ◽  
...  
Keyword(s):  
High Power ◽  
Source Code ◽  
Small Signal ◽  
Electrical Circuits ◽  
Macro Model ◽  
Insulated Gate Bipolar Transistor ◽  
Turn On ◽  
Spice Model ◽  
Test Circuit ◽  
Off Time

In this research, a novel SPICE model of an Insulated-Gate-Bipolar-Transistor (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be used in any SPICE-compatible simulators without any source code modification. This paper presents the results of DC, small signal AC, and transient characteristics considering the temperature dependence by using the proposed IGBT macro-model for SPICE. In addition, turn-on and -off time verifications are presented by using a switching test circuit provided by an IGBT manufacturer.

scholarly journals Coulomb-actuated microbeams revisited: experimental and numerical modal decomposition of the saddle-node bifurcation

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Anton Melnikov ◽  
Hermann A. G. Schenk ◽  
Jorge M. Monsalve ◽  
Franziska Wall ◽  
Michael Stolz ◽  
...  
Keyword(s):  
Finite Element ◽  
Microelectromechanical Systems ◽  
Dynamic Range ◽  
Dynamic Performance ◽  
Major Step ◽  
Element Analysis ◽  
Electrostatic Actuators ◽  
Voltage Range ◽  
Drive Voltage ◽  
Depth Analysis

AbstractElectrostatic micromechanical actuators have numerous applications in science and technology. In many applications, they are operated in a narrow frequency range close to resonance and at a drive voltage of low variation. Recently, new applications, such as microelectromechanical systems (MEMS) microspeakers (µSpeakers), have emerged that require operation over a wide frequency and dynamic range. Simulating the dynamic performance under such circumstances is still highly cumbersome. State-of-the-art finite element analysis struggles with pull-in instability and does not deliver the necessary information about unstable equilibrium states accordingly. Convincing lumped-parameter models amenable to direct physical interpretation are missing. This inhibits the indispensable in-depth analysis of the dynamic stability of such systems. In this paper, we take a major step towards mending the situation. By combining the finite element method (FEM) with an arc-length solver, we obtain the full bifurcation diagram for electrostatic actuators based on prismatic Euler-Bernoulli beams. A subsequent modal analysis then shows that within very narrow error margins, it is exclusively the lowest Euler-Bernoulli eigenmode that dominates the beam physics over the entire relevant drive voltage range. An experiment directly recording the deflection profile of a MEMS microbeam is performed and confirms the numerical findings with astonishing precision. This enables modeling the system using a single spatial degree of freedom.

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Circuit Performance ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

Field-Emission Triode of Tetrapod-Like ZnO Film Using Metal Mesh

2011 ◽  
Vol 233-235 ◽  
pp. 2600-2603 ◽  
Author(s):  
Li An Ma ◽  
Chao Xing Wu ◽  
Jin Yang Lin ◽  
Li Qin Hu ◽  
Tai Liang Guo
Keyword(s):  
Chemical Vapor Deposition ◽  
Field Emission ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Raw Material ◽  
Anode Current ◽  
Zno Film ◽  
Metal Mesh ◽  
Turn On ◽  
Field Emitters

Using Zn powder as the raw material, Tetrapod-like ZnO nanoneedles with controllable morphology and size were successfully prepared by chemical vapor deposition. A screen printed normal-gated triode with Tetrapod-like ZnO nanoneedles field emitters is demonstrated. Field emission measurements show that the Tetrapod-like ZnO nanoneedles FED triode devices posses a good field emission property. The turn-on voltage is 270V. An anode current of 2.75 mA and a gate current of 0.43 mA are extracted at a gate voltage of 600 V with a brightness of 2300 cd/m2.

scholarly journals Enhanced dynamic voltage clamping capability of Clustered IGBT at turn-off period

2016 ◽  
Vol 29 (1) ◽  
pp. 1-10
Author(s):  
Hong Long ◽  
Mark Sweet ◽  
Sankara Narayanan
Keyword(s):  
Numerical Evaluation ◽  
Load Condition ◽  
Operating Conditions ◽  
Current Gain ◽  
Power Devices ◽  
Inductive Load ◽  
Dynamic Voltage ◽  
Voltage Clamping ◽  
Safe Operating ◽  
Off Time

One of the critical requirements for high power devices is to have rugged and reliable capability against hash operating conditions. In this paper, we present the dynamic voltage clamping capability of 3.3kV Field Stop Clustered IGBT devices under extreme inductive load condition. It shows that PMOS trench gate CIGBT structure with outstanding performance of fast turn-off time and low over-shoot voltage. Further optimization of current gain of CIGBT structure is analyzed through numerical evaluation. A step further in the safe operating area has been achieved for high voltage devices by CIGBT technology.

NEW COLLECTOR OF PLANAR INSULATED GATE BIPOLAR TRANSISTOR FOR BROAD APPLICATIONS

2005 ◽  
Vol 19 (24) ◽  
pp. 1231-1240 ◽  
Author(s):  
FEI ZHANG ◽  
LINA SHI ◽  
WEN YU ◽  
CHENGFANG LI ◽  
XIAOWEI SUN
Keyword(s):  
Power Loss ◽  
Mixed Mode ◽  
Energy Band Diagram ◽  
The Other ◽  
Two Dimensional ◽  
Band Diagram ◽  
Insulated Gate Bipolar Transistor ◽  
Turn On ◽  
Operation Speed ◽  
Off Time

A new concept of Insulated Gate Bipolar Transisitor (IGBT) with a Si/Ge layer collector is proposed to meet different requirements for turn-on voltage and turn-off time. The operation principles of IGBT are discussed and the energy band diagram of Si/Ge heterojunction is employed to explain the inner dynamic mechanism of the proposed IGBT. Two-dimensional (2D) device-circuit mixed-mode simulations indicate that the tail-current, which is a major cause of the power loss and limits the operation speed of the device, is suppressed effectively by using the Si/Ge layer collector. On the other hand, turn-on voltage is increased by the use of the Si/Ge collector. Furthermore, the turn-on voltage is increasing with the increase of the areal rate of the Ge region in the whole collector, while the turn-off time is reversed. This valuable information leads to the freely tunable planar IGBT by adapting the different areal rates of the Ge region to cast to different actual situations. Detailed physical explanations are also given.

Performance of 60 A, 1200 V 4H-SiC DMOSFETs

2009 ◽  
Vol 615-617 ◽  
pp. 749-752 ◽  
Author(s):  
Brett A. Hull ◽  
Charlotte Jonas ◽  
Sei Hyung Ryu ◽  
Mrinal K. Das ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Power Dissipation ◽  
Avalanche Breakdown ◽  
Large Area ◽  
Leakage Currents ◽  
Inductive Load ◽  
Turn On ◽  
Load Circuit

Large area (8 mm x 7 mm) 1200 V 4H-SiC DMOSFETs with a specific on-resistance as low as 9 m•cm2 (at VGS = 20 V) able to conduct 60 A at a power dissipation of 200 W/cm2 are presented. On-resistance is fairly stable with temperature, increasing from 11.5 m•cm2 (at VGS = 15 V) at 25°C to 14 m•cm2 at 150°C. The DMOSFETs exhibit avalanche breakdown at 1600 V with the gate shorted to the source, although sub-breakdown leakage currents up to 50 A are observed at 1200 V and 200°C due to the threshold voltage lowering with temperature. When switched with a clamped inductive load circuit from 65 A conducting to 750 V blocking, the turn-on and turn-off energies at 150°C were less than 4.5 mJ.

Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET

2019 ◽  
Vol 963 ◽  
pp. 625-628
Author(s):  
Ajit Kanale ◽  
B. Jayant Baliga ◽  
Ki Jeong Han ◽  
Subhashish Bhattacharya
Keyword(s):  
Experimental Study ◽  
High Temperature ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

High-Voltage Stacked Diode Package

2015 ◽  
Vol 2015 (1) ◽  
pp. 000225-000230 ◽  
Author(s):  
Lauren Boteler ◽  
Alexandra Rodriguez ◽  
Miguel Hinojosa ◽  
Damian Urciuoli
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Recovery Time ◽  
Load Test ◽  
Avalanche Breakdown ◽  
Electric Force ◽  
Inductive Load ◽  
Turn On ◽  
Series Configuration ◽  
Reverse Recovery Time

The Army is moving to a more electric force with a number of high-voltage applications. To support this transition, there have been efforts to develop high voltage (15–30 kV) single-die 4H-silicon carbide (SiC) bipolar switches and diodes. However, packaging these high-voltage devices has proven to be challenging since standard packaging methods cannot withstand the high voltages in a compact form. Therefore, this work aims to develop a compact prototype package with improved size, weight, and power density by stacking diodes. The stacked diode approach allows elimination of almost half of the wirebonds, reduces the board size by 45%, and reduces the package inductance. A module has been designed, fabricated, and tested which is the first 30 kV module reported in the literature to stack two high-voltage diodes in a series configuration. The package has a number of features specific to high-voltage packaging including (1) two fins that extend the perimeter of the package to mitigate shorting, and (2) all the leads were designed with rounded corners to minimize voltage crowding. Hi-pot tests were performed on the unpopulated package and showed the package can withstand 30 kV without breaking down. The completed package with the stacked diodes showed avalanche breakdown occurring at 29 kV. The complete package was then compared to an equivalent discrete diode module and showed a 10X reduction in size. During a clamped-inductive load test the stacked diodes showed lower parasitic capacitance, faster reverse recovery time, and lower turn on energy as compared to the discrete diode packages.

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