Annealing Temperature Effect of ZnO Seed Layer on Integrated Photosupercapacitor Performance

Photosupercapacitor is an integrated device for harvesting and storing solar energy into electrical energy. Photosupercapacitor is constructed by solar cell and supercapacitor. In the solar cell with DSSC type, one of the influential variables is photoanode performance. The photoanode with ZnO layer plays a role in light absorption, charge mobility, and electrical properties, which are influenced by crystal structure and nanoscale morphology. One of nanoscale morphology of ZnO that widely used is nanorods. This work is focussed to investigate the effect of annealing temperature on seed layer ZnO to growth nanorods shape in photoanode of photosupercapacitor and its performance. The seed layer ZnO nanoparticle was deposited onto FTO substrate by a screen printing method. The ZnO nanorod was grown by dippin FTO/ZnO in solution (Zinc nitrate, HMT, and DI water) under 100 °C. The photosupercapacitor was constructed by DSSC and ZnO symmetric supercapacitor which integrated by using aluminum foil substrate. The annealing temperature on ZnO nanoparticles affected on increasing crystal size of ZnO seed. All of the samples show ZnO wurtzite phase with the highest peak located on the hkl plane (101), but ZnO nanorod growth to hkl plane (100). The DSSC part efficiency produced around 0.874%. The resulting efficiency of photosupercapacitor is around 0.549%. The annealing temperature causes the value of specific capacitance to decrease, because of decreasing DSSC performance.

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Hierarchical core–shell heterostructure of H2O-oxidized ZnO nanorod@Mg-doped ZnO nanoparticle for solar cell applications

Materials Advances ◽

10.1039/d0ma00313a ◽

2020 ◽

Vol 1 (5) ◽

pp. 1253-1261 ◽

Cited By ~ 1

Author(s):

Christian Mark Pelicano ◽

Itaru Raifuku ◽

Yasuaki Ishikawa ◽

Yukiharu Uraoka ◽

Hisao Yanagi

Keyword(s):

Solar Cell ◽

Charge Transport ◽

Zno Nanoparticles ◽

Optoelectronic Devices ◽

Core Shell ◽

Zno Nanoparticle ◽

Zno Nanorod ◽

Strategic Design ◽

Doped Zno ◽

Mg Doped

Strategic design of hierarachical core–shell heterostructure of H2O-oxidized ZnO nanorod@Mg-doped ZnO nanoparticles with enhanced charge-transport capabilities for optoelectronic devices.

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Effects of Seed Layer on Growth of ZnO Nanorod and Performance of Perovskite Solar Cell

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.5b03276 ◽

2015 ◽

Vol 119 (19) ◽

pp. 10321-10328 ◽

Cited By ~ 112

Author(s):

Dae-Yong Son ◽

Kyeong-Hui Bae ◽

Hui-Seon Kim ◽

Nam-Gyu Park

Keyword(s):

Solar Cell ◽

Seed Layer ◽

Perovskite Solar Cell ◽

Zno Nanorod ◽

And Performance

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Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study

Materials ◽

10.3390/ma9040299 ◽

2016 ◽

Vol 9 (4) ◽

pp. 299 ◽

Cited By ~ 45

Author(s):

Ana Pimentel ◽

Sofia Ferreira ◽

Daniela Nunes ◽

Tomas Calmeiro ◽

Rodrigo Martins ◽

...

Keyword(s):

Seed Layer ◽

Annealing Temperature ◽

Zno Nanorod ◽

Nanorod Arrays ◽

Zno Nanorod Arrays ◽

Temperature Study ◽

Uv Sensors

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Effect of Annealing Temperature on the Performance of ZnO Seed Layer for Photoanode in Photoelectrochemical Cells

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.398.156 ◽

2020 ◽

Vol 398 ◽

pp. 156-166

Author(s):

Asla A. Al-Zahrani ◽

Zulkarnain Zainal ◽

Zainal Abidin Talib ◽

Hong Ngee Lim ◽

Laimy Mohd Fudzi ◽

...

Keyword(s):

Thin Films ◽

Surface Morphology ◽

Band Gap ◽

Seed Layer ◽

Annealing Temperature ◽

Band Gap Energy ◽

Zno Thin Films ◽

Zno Nanoparticle ◽

Gap Energy ◽

Ito Glass

Zinc oxide (ZnO) thin films were coated onto Indium Tin Oxide (ITO) glass substrate using spin coating technique as a function of annealing temperature. The thin film preparation was undertaken by utilising zinc acetate dihydrate, ethanol and diethanolamine as the precursors. The films were coated at room temperature prior to being annealed at temperatures ranging from 300 °C to 450 °C. The resulting crystalline structure and surface morphology of the thin films were then examined using X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM). UV-visible spectrophotometer was also used to record the optical absorbance in wavelengths ranging from 200 to 800 nm. The findings revealed that the ZnO thin films showed a single phase of wurtzite with n-type semiconductor, with the lowest value of band gap energy of 3.28 eV for ZnO thin films annealed at 350 °C. FESEM results showed that the ZnO nanoparticles were very compact on the surface, whereby the average particle size was equivalent to 108.5, 115.3, 108.2 and 107.8 nm at the temperatures 300 °C, 350 °C, 400 °C, and 450 °C, respectively. Additionally, the highest photoconversion efficiency (0.11%) recorded for the sample was annealed at 350◦C. Thus, annealing temperature was found to significantly affect the optical and electrical properties of ZnO nanoparticle seed layer, as well as its band gap energy and surface morphology.

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Facile Synthesis of a Porous ZnO Nanorod Array with Enhanced Photocatalysis for Photoelectrochemical Water Splitting Application

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.17411 ◽

2020 ◽

Vol 20 (6) ◽

pp. 3512-3518

Author(s):

Saleh Khan ◽

Xiao-He Liu ◽

Xi Jiang ◽

Qing-Yun Chen

Keyword(s):

Annealing Temperature ◽

Zno Nanorods ◽

Nanorod Array ◽

Photocurrent Density ◽

Zno Nanorod ◽

Nanorod Arrays ◽

Zno Nanorod Arrays ◽

Irradiation Intensity ◽

Heat Treated ◽

Positive Effect

Highly efficient and effective porous ZnO nanorod arrays were fabricated by annealing ZnO nanorod arrays grown on a substrate using a simple hydrothermal method. The annealing had a positive effect on the nanorod morphology, structure and optical properties. The porosity was closely related to the annealing temperature. After heating at 450 °C, pores appeared on the nanorods. It was demonstrated that the porosity could be exploited to improve the visible light absorption of ZnO and reduce the bandgap from 3.11 eV to 2.99 eV. A combination of improved charge separation and transport of the heat-treated ZnO thus led to an increase in the photoelectrochemical properties. At an irradiation intensity of 100 mW/cm−2, the photocurrent density of the porous nanorod array was approximately 1.3 mA cm−2 at 1.2 V versus Ag/AgCl, which was five times higher than that of the ZnO nanorods. These results revealed the synthesis of promising porous ZnO nanorods for photoelectrochemical applications.

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Effect of ZnO seed layer on the catalytic growth of vertically aligned ZnO nanorod arrays

Materials Chemistry and Physics ◽

10.1016/j.matchemphys.2010.02.027 ◽

2010 ◽

Vol 122 (1) ◽

pp. 18-22 ◽

Cited By ~ 46

Author(s):

P.K. Giri ◽

Soumen Dhara ◽

Ritun Chakraborty

Keyword(s):

Seed Layer ◽

Zno Nanorod ◽

Nanorod Arrays ◽

Zno Nanorod Arrays ◽

Catalytic Growth ◽

Vertically Aligned

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A Study on Characterization of Light-Induced Electroless Plated Ni Seed Layer and Silicide Formation for Solar Cell Application

Journal of the Korean Physical Society ◽

10.3938/jkps.72.615 ◽

2018 ◽

Vol 72 (5) ◽

pp. 615-621 ◽

Cited By ~ 1

Author(s):

Ashkan Vakilipour Takaloo ◽

Seung Ki Joo ◽

Firat Es ◽

Rasit Turan ◽

Doo Won Lee

Keyword(s):

Solar Cell ◽

Seed Layer ◽

Silicide Formation ◽

Solar Cell Application

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Analysis of nitride films on silicon substrates by ion beam methods

Journal of Materials Research ◽

10.1557/jmr.1995.3124 ◽

1995 ◽

Vol 10 (12) ◽

pp. 3124-3128 ◽

Cited By ~ 2

Author(s):

Z.S. Zheng ◽

J.R. Liu ◽

X.T. Cui ◽

W.K. Chu ◽

S.P. Rangarajan ◽

...

Keyword(s):

Thin Films ◽

Ion Beam ◽

Light Element ◽

Aluminum Foil ◽

Resonance Scattering ◽

Particle Beam ◽

Silicon Substrates ◽

Resonance Energies ◽

Contamination Levels ◽

Foil Substrate

The simultaneous determination of light element contamination levels and accurate nitrogen-to-metal ratios in nitride thin films deposited on silicon substrates is demonstrated by using α-particle beam energies in the range 3–4 MeV. In this energy range, significant light element sensitivity enhancements are observed, while the heavy elements show classical Rutherford behavior. The use of resonance scattering at different resonance energies is shown to be the method of choice for analyzing BN films on silicon. Also, a technique is suggested for analyzing very thin films in which an aluminum foil substrate and buffer layer are used to enhance sensitivities.

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