Analysis of nitride films on silicon substrates by ion beam methods

1995 ◽  
Vol 10 (12) ◽  
pp. 3124-3128 ◽  
Author(s):  
Z.S. Zheng ◽  
J.R. Liu ◽  
X.T. Cui ◽  
W.K. Chu ◽  
S.P. Rangarajan ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Light Element ◽  
Aluminum Foil ◽  
Resonance Scattering ◽  
Particle Beam ◽  
Silicon Substrates ◽  
Resonance Energies ◽  
Contamination Levels ◽  
Foil Substrate

The simultaneous determination of light element contamination levels and accurate nitrogen-to-metal ratios in nitride thin films deposited on silicon substrates is demonstrated by using α-particle beam energies in the range 3–4 MeV. In this energy range, significant light element sensitivity enhancements are observed, while the heavy elements show classical Rutherford behavior. The use of resonance scattering at different resonance energies is shown to be the method of choice for analyzing BN films on silicon. Also, a technique is suggested for analyzing very thin films in which an aluminum foil substrate and buffer layer are used to enhance sensitivities.

Determination of refractive index and thickness of YbF3 thin films deposited at different bias voltages of APS ion source from spectrophotometric methods

2018 ◽  
Vol 7 (1-2) ◽  
pp. 33-37 ◽  
Author(s):  
Yinhua Zhang ◽  
Shengming Xiong ◽  
Wei Huang ◽  
Kepeng Zhang
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Bias Voltage ◽  
Dispersion Model ◽  
Ion Beam ◽  
Plasma Source ◽  
Ion Source ◽  
Monocrystalline Silicon ◽  
Silicon Substrates ◽  
Spectrophotometric Methods

AbstractYtterbium fluoride (YbF3) single thin films were prepared on sapphire and monocrystalline silicon substrates through conventional thermal evaporation and ion beam-assisted deposition (IAD), at bias voltages ranging from 50 to 160 V of the Leybold advanced plasma source (APS). By using the Cauchy dispersion model, the refractive index and thickness of the YbF3thin films were obtained by fitting the 400–2500 nm transmittance of the monolayer YbF3thin films on the sapphire substrate. At the same time, the refractive index and thickness of the YbF3thin films on the monocrystalline silicon substrates were also measured using the VASE ellipsometer at wavelength from 400 to 2200 nm. The results showed that the refractive index deviation of the YbF3thin films between the fitted values by the transmittance spectra and the measured values by the VASE ellipsometer was <0.02 and the relative deviation of the thickness was <1%. Furthermore, the refractive index of the YbF3thin films increased with increasing APS bias voltage. The conventional YbF3thin films and the IAD thin films deposited at low bias voltage revealed a negative inhomogeneity, and a higher bias voltage is beneficial for improving the homogeneity of YbF3thin films.

Electronic transport and microstructure in MoSi2 thin films

1986 ◽  
Vol 1 (3) ◽  
pp. 493-502 ◽  
Author(s):  
T.L. Martin ◽  
J.E. Mahan
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Electronic Materials ◽  
Ion Beam ◽  
Molybdenum Disilicide ◽  
Residual Resistivity ◽  
Silicon Substrates ◽  
Tetragonal Crystal ◽  
Average Grain Size ◽  
Polysilicon Layer

Molybdenum disilicide thin films having the tetragonal crystal structure were prepared by furnace reaction of ion-beam-sputtered molybdenum layers with silicon substrates. The room temperature intrinsic resistivity is ∼20 μΩ cm. The Hall effect indicates predominantly hole conduction. Geometrical magnetoresistance measurements provide a carrier mobility estimate of 90 cm2 /V.s at room temperature. The Hall mobility is much less than this; the large difference between the two mobility values suggests multiband conduction. An isotropic, degenerate, twoband model may be fitted to the data with a comparatively low majority carrier concentration (holes) of ∼ 1.5 × 1021 cm−3 Regarding the effects of microstructure on transport, the residual resistivity for films formed on 1-0-0 silicon wafers is much greater than for those formed on an (LPCVD) polysilicon layer: 92 vs 29 μΩ cm, respectively. A correlation with average grain size for the two sample types suggests that grain boundary scattering is the principal cause of the residual resistivity. electronic materials; electrical properties; thin film

Deposition and Characterisation of SrTiO 3 Thin Films Deposited by Ion Beam Sputtering on Platinized Silicon Substrates

2003 ◽  
Vol 288 (1) ◽  
pp. 121-132 ◽  
Author(s):  
Emmanuel Defaÿ ◽  
Bernard André ◽  
Françoise Baume ◽  
Gérard Tartavel ◽  
Denise Muyard ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Strength Measurement in Brittle Thin Films

2007 ◽  
Vol 1049 ◽  
Author(s):  
Oscar Borrero-Lopez ◽  
Mark Hoffman ◽  
Avi Bendavid ◽  
Phil J Martin
Keyword(s):  
Thin Films ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Nanocomposite Films ◽  
Silicon Substrates ◽  
Cross Sectional ◽  
Test Methodology ◽  
Soft Foundation ◽  
Theory Of Plates ◽  
Strength Variability

AbstractIn this work we have investigated the strength variability of brittle thin films (thickness ≤ 1 μm) utilising a simple test methodology. Nanoindentation of as-deposited tetrahedral amorphous carbon (ta-C) and Ti-Si-N nanocomposite films on silicon substrates followed by cross-sectional examination of the damage with a Focused Ion Beam (FIB) Miller allows the occurrence of cracking to be assessed in comparison with discontinuities (pop-ins) in the load-displacement curves. Strength is determined from the critical loads at which cracking occurs using the theory of plates on a soft foundation. This is of great relevance, since the fracture strength of thin films ultimately controls their reliable use in a broad range of functional applications.

Hardness depth profiling of ion-implanted polymer thin films

2002 ◽  
Vol 725 ◽  
Author(s):  
Gunnar Suchaneck ◽  
Bodo Wolf ◽  
Margarita Guenther ◽  
Gerald Gerlach
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Depth Profiling ◽  
Silicon Substrates ◽  
Depth Sensing ◽  
Elastic Module ◽  
Deposited Energy ◽  
Modified Surface ◽  
Hardness Depth ◽  
Ion Implanted

AbstractHardness measurements in ion implanted polymers are complicated by the fact that the hardness of the material varies as a function of depth within the modified layer. This effect is induced by the distribution of deposited energy, which produces a depth-dependent variation in microstructure. We have used the depth-sensing nano-indentation technique to investigate the mechanical properties of thin films of ion-beam modified aromatic polymers deposited onto silicon substrates. The depth of the ion-modified surface layer was determined using the load variation technique from the hardness and elastic module depth profile and the depth dependence of the power law coefficient of the unloading curve.

Fabrication of Sol-Gel Derived Ferroelectric Plzt (9/65/35) Optical Waveguides

1991 ◽  
Vol 243 ◽  
Author(s):  
P.F. Baude ◽  
C. Ye ◽  
T. Tamagawa ◽  
D.L. Polla
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Ion Beam ◽  
Sol Gel ◽  
Optical Quality ◽  
Silicon Substrates ◽  
Deposition Technique ◽  
Ion Beam Etching ◽  
Wet Chemical ◽  
Film Cracking

AbstractCrack free transparent ferroelectric PLZT (9/65/35) thin films were deposited on silicon substrates using the sol-gel deposition technique. An intermediate layer of PLT was used to improve the PLZT's optical quality and to reduce the amount of film cracking. Wet chemical, plasma and reactive ion etching are investigated as means of realizing the necessary waveguide structures. Waveguiding is observed in 2-4mm long PLZT (9/65/35) fabricated by reactive ion beam etching.

Optical Properties of Amorphous AlN Thin Films on Glass and Silicon Substrates Grown by Single Ion Beam Sputtering

2010 ◽  
Vol 49 (9) ◽  
pp. 095802 ◽  
Author(s):  
Fatemeh Hajakbari ◽  
Majid Mojtahedzadeh Larijani ◽  
Mahmood Ghoranneviss ◽  
Morteza Aslaninejad ◽  
Alireza Hojabri
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Contact damage of tetrahedral amorphous carbon thin films on silicon substrates

2009 ◽  
Vol 24 (11) ◽  
pp. 3286-3293 ◽  
Author(s):  
Oscar Borrero-López ◽  
Mark Hoffman ◽  
Avi Bendavid ◽  
Phil J. Martin
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Microelectromechanical Systems ◽  
Ion Beam ◽  
Carbon Films ◽  
Silicon Substrates ◽  
Tetrahedral Amorphous Carbon ◽  
Thick Coatings

We have investigated the fracture behavior of tetrahedral amorphous carbon films, with thicknesses 0.15 (ultrathin), 0.5 (thin), and 1.2 (thick) microns on silicon substrates. To that end, the systems were progressively loaded into a nanoindenter using a spherical tip, and surface and cross sections were subsequently examined using a focused ion beam miller at different loads. A transition was found as a function of film thickness: for ultrathin and thin films, cracking (radial and lateral) initiated in the silicon substrate and followed a similar path in the films. Thicker films, on the other hand, provided a higher level of protection to the substrate, and cracking (lateral and radial at the interface) was constrained to the film. The damage modes and the transition obtained differ from those that occur in thick coatings. Lateral cracks are highly dangerous, leading to delamination of thick films and to spallation when thinner films are used. The results have implications concerning the mechanical reliability of microelectromechanical systems.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Electron energy loss spectroscopy of diamond-like carbon thin films

1992 ◽  
Vol 50 (2) ◽  
pp. 1272-1273
Author(s):  
J. Kulik ◽  
Y. Lifshitz ◽  
G.D. Lempert ◽  
S. Rotter ◽  
J.W. Rabalais ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Ion Beam ◽  
Diamond Like Carbon ◽  
Ion Beam Deposition ◽  
Chemistry Research ◽  
Carbon Thin Films ◽  
Electron Energy Loss ◽  
Beam Deposition

Carbon thin films with diamond-like properties have generated significant interest in condensed matter science in recent years. Their extreme hardness combined with insulating electronic characteristics and high thermal conductivity make them attractive for a variety of uses including abrasion resistant coatings and applications in electronic devices. Understanding the growth and structure of such films is therefore of technological interest as well as a goal of basic physics and chemistry research. Recent investigations have demonstrated the usefulness of energetic ion beam deposition in the preparation of such films. We have begun an electron microscopy investigation into the microstructure and electron energy loss spectra of diamond like carbon thin films prepared by energetic ion beam deposition.The carbon films were deposited using the MEIRA ion beam facility at the Soreq Nuclear Research Center in Yavne, Israel. Mass selected C+ beams in the range 50 to 300 eV were directed onto Si {100} which had been etched with HF prior to deposition.

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