Cu(In,Ga)Se2 Prepared by a 2 and 3-Stage Hybrid RF-Magnetron Sputtering and Se Evaporation Method: Properties and Solar Cell Performance

2006 ◽  
Vol 514-516 ◽  
pp. 93-97 ◽  
Author(s):  
António F. da Cunha ◽  
F. Kurdzesau ◽  
Pedro M.P. Salomé
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Maximum Efficiency ◽  
Solar Cell Performance ◽  
End Point Detection ◽  
Influence Of Substrate ◽  
Point Detection ◽  
Final Composition

The potential of RF-magnetron sputtering to achieve high quality Cu(In,Ga)Se2 (CIGS) thin films and efficient solar cells with the goal of using a single technique for all solar cell processing steps is explored. The end point detection method was adapted to RF-magnetron deposition of CIGS in two- or three stages sputtering process. It allows the control of the final composition of the deposited layers in a reproducible way. The influence of substrate temperature and Ar pressure during the deposition on the surface and crossectional morphology of CIGS films was studied for two and three-stage sputtering process sequence. The solar cells prepared with films deposited by two-stage sputtering nave showed a better performance with maximum efficiency above 8 %.

Numerical study of CdTe solar cells with p-MoTe2 TMDC as an interfacial layer using SCAPS

2018 ◽  
Vol 32 (23) ◽  
pp. 1850269 ◽  
Author(s):  
Mohamed Moustafa ◽  
Tariq Alzoubi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Band Gap ◽  
Carrier Concentration ◽  
Interfacial Layer ◽  
Cell Performance ◽  
Maximum Efficiency ◽  
Back Contact ◽  
Solar Cell Performance ◽  
The Impact

The impact of molybdenum ditelluride (p-type MoTe2) transition metal dichalcogenide (TMDC) material formation as an interfacial layer between CdTe absorber layer and Mo back contact is investigated. The simulation is conducted using the solar cell capacitance simulator (SCAPS) software. Band gap energy, carrier concentration, and layer thickness of the p-MoTe2 have been varied in this study to investigate the possible influences of p-MoTe2 on the electrical properties and the photovoltaic parameters of CdTe thin film solar cells. It has been observed that a thickness of the p-MoTe2 interfacial layer less than 60 nm leads to a decrease in the cell performance. In regard to the effect of the band gap, a maximum efficiency of 16.4% at the optimum energy gap value of 0.95 eV has been obtained at a doping of [Formula: see text]. Additionally, increasing the acceptor carrier concentration [Formula: see text] of MoTe2 enhances the solar cell performance. The solar cell efficiency reaches 15.5% with [Formula: see text] of [Formula: see text] with layer thicknesses above 80 nm. This might be attributed to the possibility of forming a back surface field for the photogenerated electrons, which reduces recombination at the back contact and hence provides a low resistivity contact for holes. The results justify that the MoTe2 interfacial layer mediates an ohmic contact to CdTe films.

scholarly journals Influence of Substrate Temperature during InxSy Sputtering on Cu(In,Ga)Se2/Buffer Interface Properties and Solar Cell Performance

2020 ◽  
Vol 10 (3) ◽  
pp. 1052 ◽  
Author(s):  
Dimitrios Hariskos ◽  
Wolfram Hempel ◽  
Richard Menner ◽  
Wolfram Witte
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Substrate Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Buffer Layers ◽  
Solar Cell Performance ◽  
Sodium Accumulation ◽  
Influence Of Substrate ◽  
Copper Depletion ◽  
Conversion Efficiencies

Indium sulfide (InxSy)—besides CdS and Zn(O,S)—is already used as a buffer layer in chalcopyrite-type thin-film solar cells and modules. We discuss the influence of the substrate temperature during very fast magnetron sputtering of InxSy buffer layers on the interface formation and the performance of Cu(In,Ga)Se2 solar cells. The substrate temperature was increased from room temperature up to 240 °C, and the highest power conversion efficiencies were obtained at a temperature plateau around 200 °C, with the best values around 15.3%. Industrially relevant in-line co-evaporated polycrystalline Cu(In,Ga)Se2 absorber layers were used, which yield solar cell efficiencies of up to 17.1% in combination with a solution-grown CdS buffer. The chemical composition of the InxSy buffer as well as of the Cu(In,Ga)Se2/InxSy interface was analyzed by time-of-flight secondary ion mass spectrometry. Changes from homogenous and stoichiometric In2S3 layers deposited at RT to inhomogenous and more sulfur-rich and indium-deficient compositions for higher temperatures were observed. This finding is accompanied with a pronounced copper depletion at the Cu(In,Ga)Se2 absorber surface, and a sodium accumulation in the InxSy buffer and at the absorber/buffer interface. These last two features seem to be the origin for achieving the highest conversion efficiencies at substrate temperatures around 200 °C.

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band

Optimisation of diketopyrrolopyrrole:fullerene solar cell performance through control of polymer molecular weight and thermal annealing

2014 ◽  
Vol 2 (45) ◽  
pp. 19282-19289 ◽  
Author(s):  
Zhenggang Huang ◽  
Elisa Collado Fregoso ◽  
Stoichko Dimitrov ◽  
Pabitra Shakya Tuladhar ◽  
Ying Woan Soon ◽  
...  
Keyword(s):  
Molecular Weight ◽  
Solar Cells ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Bulk Heterojunction ◽  
Cell Performance ◽  
Polymer Molecular Weight ◽  
Solar Cell Performance ◽  
Heterojunction Solar Cells ◽  
Bulk Heterojunction Solar Cells

The performance of bulk heterojunction solar cells based on a novel donor polymer DPP-TT-T was optimised by tuning molecular weight and thermal annealing.

Synergistic improvements in the performance and stability of inverted planar MAPbI3-based perovskite solar cells incorporating benzylammonium halide salt additives

2021 ◽  
Author(s):  
Hung-Cheng Chen ◽  
Jie-Min Lan ◽  
Hsiang-Lin Hsu ◽  
Chia-Wei Li ◽  
Tien-Shou Shieh ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Solar Cells ◽  
Solar Cell ◽  
Surface Morphology ◽  
Perovskite Solar Cells ◽  
Cell Performance ◽  
Solar Cell Performance ◽  
Halide Salt

Three different benzylammonium halide (Cl, Br, and I) salts were investigated to elucidate their effects as additives on MAPbI3 perovskite surface morphology, crystal structure, optical properties, and solar cell performance and stability.

Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates

2001 ◽  
Vol 664 ◽  
Author(s):  
Baojie Yana ◽  
Jeffrey Yanga ◽  
Kenneth Lord ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Frequency ◽  
Room Temperature ◽  
Defect Density ◽  
Very High Frequency ◽  
Solar Cell Performance ◽  
Kinetics Of ◽  
Very High

ABSTRACTA systematic study has been made of the annealing kinetics of amorphous silicon (a-Si) alloy solar cells. The cells were deposited at various rates using H2 dilution with radio frequency (RF) and modified very high frequency (MVHF) glow discharge. In order to minimize the effect of annealing during light soaking, the solar cells were degraded under 30 suns at room temperature to quickly reach their saturated states. The samples were then annealed at an elevated temperature. The J-V characteristics were recorded as a function of annealing time. The correlation of solar cell performance and defect density in the intrinsic layer was obtained by computer simulation. Finally, the annealing activation energy distribution (Ea) was deduced by fitting the experimental data to a theoretical model. The results show that the RF low rate solar cell with high H2 dilution has the lowest Ea and the narrowest distribution, while the RF cell with no H2 dilution has the highest Ea and the broadest distribution. The MVHF cell made at 8Å/s withhigh H2 dilution shows a lower Ea and a narrower distribution than the RF cell made at 3 Å/s, despite the higher rate. We conclude that different annealing kinetics plays an important role in determining the stabilized performance of a-Si alloy solar cells.

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