The Effects of Oxygen Partial Pressure on Interface States and Ferroelectric Properties of PZT/PbO/Si (MFIS) Structures

2007 ◽  
Vol 544-545 ◽  
pp. 1077-1080
Author(s):  
Chul Ho Park ◽  
Mi Sook Won ◽  
Young Gook Son
Keyword(s):  
Thin Film ◽  
Partial Pressure ◽  
Photoelectron Spectroscopy ◽  
Ferroelectric Properties ◽  
Pressure Ratio ◽  
Buffer Layers ◽  
Interface Condition ◽  
Si Substrate ◽  
Pzt Thin Film ◽  
P Type

Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering method with Pb1.1Zr0.53Ti0.47O3 and PbO targets. From the X-ray photoelectron spectroscopy (XPS) results, we could confirm that the partial pressure ratio during PbO deposition affects the interface condition of PbO/Si and the chemical state of Pb existing at the surface of the PZT thin film. The maximum value of the memory window is 3.0 V under the applied voltage of 9V for Pt/PZT (200 nm 400°C)/PbO (80 nm, 300°C)/Si structures with the PbO buffer layer deposited at the partial pressure of 7:3. From these results, we could assume that the PbO buffer layers play a role of the diffusion barrier between the PZT thin film and the Si substrate as well as the seed layer.

Microstructural and Ferroelectric Properties of a Chemical Solution Deposited Epitaxial PbZr0.5 Ti0.5O3 Thin Film on a SrRuO3/SrTiO3 Substrate

1999 ◽  
Vol 14 (4) ◽  
pp. 1190-1193 ◽  
Author(s):  
J. H. Kim ◽  
A. T. Chien ◽  
F. F. Lange ◽  
L. Wills
Keyword(s):  
Thin Film ◽  
Ferroelectric Properties ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Chemical Solution Deposition Method ◽  
Transmission Electron ◽  
Saturation Polarization ◽  
Pzt Thin Film ◽  
Relationship Of

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at 600 °C. The microstructure of the PZT thin film was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. The PZT thin film has the epitaxial orientational relationship of (001) [010]PZT ║ (001) [010]SRO ║ (001) [010]STO with the substrate. The remnant (Pr ) and saturation polarization (Ps) density were measured to be Pr ~ 51.4 µC/cm2 and Ps ~ 62.1 µC/cm2 at 5 V, respectively. Ferroelectric fatigue measurements show that the net-switching polarization begins to drop (to 98% of its initial value) after 7 × 108 cycles.

Ferroelectric and piezoelectric properties of highly oriented Pb(Zr,Ti)O3 film grown on Pt/Ti/SiO2/Si substrate using conductive lanthanum nickel nitrate buffer layer

2005 ◽  
Vol 20 (3) ◽  
pp. 726-733 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Hyoun-Ee Kim
Keyword(s):  
Thin Film ◽  
Buffer Layer ◽  
Lead Zirconate Titanate ◽  
Piezoelectric Properties ◽  
Nickel Nitrate ◽  
Si Substrate ◽  
Pzt Thin Film ◽  
Pzt Films ◽  
Lanthanum Nickel ◽  
Ferroelectric And Piezoelectric Properties

The orientation and electrical properties of Pb(Zr,Ti)O3 thin films deposited on a Pt/Ti/SiO2/Si substrate using lanthanum nickel nitrate as a conductive buffer layer were analyzed. The lanthanum nickel nitrate buffer layer was not only electrically conductive but also effective in controlling the texture of the lead zirconate titanate (PZT) thin film. The role of the lanthanum nickel nitrate buffer layer and its effects on the orientation of the PZT thin film were analyzed by x-ray diffraction, electron beam back-scattered diffraction, and scanning electron microscopy. The annealed lanthanum nickel nitrate buffer layer was sufficiently conducting for use in longitudinal electrode configuration devices. The dielectric, ferroelectric, and piezoelectric properties of the highly (100) oriented PZT films grown with the lanthanum nickel nitrate buffer layer were measured and compared with those of (111) and (100) oriented PZT films deposited without a buffer layer.

Chemical bath process for highly efficient Cd-free chalcopyrite thin-film-based solar cells

2000 ◽  
Vol 77 (9) ◽  
pp. 723-729
Author(s):  
A Ennaoui
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Subsequent Development ◽  
Energy Band Diagram ◽  
Buffer Layers ◽  
Band Offsets ◽  
Good Surface

The highest efficiency for Cu(Ga,In)Se2 (CIGS) thin-film-based solar cells has been achieved with CdS buffer layers prepared by a solution growth method known as the chemical bath deposition (CBD). With the aim of developing Cd-free chalcopyrite-based thin-film solar cells, we describe the basic concepts involved in the CBD technique. The recipes developed in our laboratory for the heterogeneous deposition of good-quality thin films of ZnO, ZnSe, and MnS are presented. In view of device optimization, the initial formation of chemical-bath-deposited ZnSe thin films on Cu(Ga,In)(S,Se)2 (CIGSS) and the subsequent development of the ZnSe/CIGSS heterojunctions were investigated by X-ray photoelectron spectroscopy (XPS). The good surface coverage was controlled by measuring changes in the valence-band electronic structure as well as changes in the In4d, Zn3d core lines. From these measurements, the growth rate was found to be around 3.6 nm/min. The valence band and the conduction band-offsets ΔEV and ΔEC between the layers were determined to be 0.60 and 1.27 eV, respectively for the CIGSS/ZnSe interface. The energy-band diagram is discussed in connection with the band-offsets detemined from XPS data. A ZnSe thickness below 10 nm has been found to be optimum for achieving a homogeneous and compact buffer layer on CIGSS with a total area efficiency of 13.7%.PACS No.: 42.70

The Microstructure, Phase and Ferroelectric Properties of PZT Thin Films on Oriented Multilayer Electrodes

1999 ◽  
Vol 596 ◽  
Author(s):  
Tingkai Li ◽  
Sheng Teng Hsu ◽  
Yufei Gao ◽  
Mark Engelhard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Hysteresis Loop ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Pyrochlore Phase ◽  
Experimental Results ◽  
Butyl Ether ◽  
Pzt Thin Films ◽  
Pzt Thin Film

AbstractThree kinds of oriented electrodes of Pt, Ir and Pt/Ir electrodes were prepared using electron beam evaporation techniques for deposition of PZT thin films. An oxide MOCVD reactor with liquid delivery system was used for the growth of PZT thin films. [Pb(thd)2], Zr(TMHD)4 and Ti(IPO)4 were dissolved in a mixed solvent of tetrahydrofuran or butyl ether, isopropanol and tetraglyme to form a precursor source. The deposition temperature and pressure were 500 - 650°C and 5 - 10 Torr, respectively. The experimental results showed PZT thin film deposited on various electrodes had different phase formation, microstructure and ferroelectric property. The X-ray patterns showed the perovskite phase of PZT was formed on both Ir and Pt/Ir electrodes at 550°C. The grain size of the PZT thin film increases after a further, higher temperature annealing. The as-deposited PZT thin film on Pt electrode exhibits pyrochlore phase at 550°C. The phase is transformed to perovskite phase after 650°C annealing. The experimental results also indicated that the MOCVD PZT thin film on Pt/Ir exhibits better ferroelectric and electrical properties compared to those deposited on Pt and Ir electrodes. A 300 nm thick PZT thin film on Pt/Ir electrode has a square, well saturated, and symmetrical hysteresis loop with 2Pr value of 40 μC/cm2 and 2Ec of 73 kV/cm at an applied voltage of 5 V. The hysteresis loop of the PZT thin film is almost saturated at 2 V. The leakage current of the film is 6.16 × 10−7 A/cm2 at 100 KV/cm. The electrode effects on ferroelectric properties of PZT thin films also have been investigated.

Effect of c-Si1-xGex Thickness Grown by LPCVD on the Performance of Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells

2012 ◽  
Vol 1447 ◽  
Author(s):  
Sabina Abdul Hadi ◽  
Pouya Hashemi ◽  
Nicole DiLello ◽  
Ammar Nayfeh ◽  
Judy L. Hoyt
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Layer Thickness ◽  
Surface Region ◽  
Absorber Layer ◽  
Buffer Layers ◽  
Optical Carrier ◽  
Near Surface ◽  
Heterojunction Solar Cells ◽  
P Type

ABSTRACTIn this paper the effect of Si1-xGex absorber layer thickness on thin film a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si0.59Ge0.41 on top of 5 μm Si1-xGex graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in Voc (0.41V) and that Jsc increases from 17.2 to 18.1 mA/cm2 when the Si0.59Ge0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on Jsc is also observed for 2 and 4 μm-thick Si and Si0.75Ge0.25 absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of Jsc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.

Effects of Buffer Layer on the Fabrication and Characteristics of Ferroelectric Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Han Wook Song ◽  
Joon Sung Lee ◽  
Dae-Weon Kim ◽  
Kwang Ho Kim ◽  
Tae-Hyun Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Sol Gel ◽  
Optimum Thickness ◽  
Si Substrate ◽  
Barrier Effects ◽  
Pzt Thin Film ◽  
Different Temperatures ◽  
Gel Technique

ABSTRACTMgO thin films were deposited on Si(100) substrate with different temperatures from 500 °C to 800 °C and different e-beam powers from 25W to 100W using e-beam evaporation method. Pb(Zr0.53Ti0.47)O3(PZT) thin films were deposited on MgO/Si(100) substrates with different drying temperatures from 190 °C to 310 °C using sol-gel technique. If there were no buffer layer between the PZT thin film and Si substrate, the peaks corresponding to perovskite PZT phase were not observed. However the buffer layer were inserted between the PZT thin film and Si substrate, it was possible to fabricate perovskite PZT phase. The barrier effects of MgO thin film to the interdiffusion of Pb were investigated by AES study. Optimum thickness of MgO at which PZT/MgO/Si structure shows P-E hysteresis was calculated, and the hysteresis was tested for PZT/MgO/Si structures with different MgO thicknesses.

Croconic Acid Thin Film Formation for Ferroelectric Gate OFETs

2013 ◽  
Vol 1587 ◽  
Author(s):  
Shun-ichiro Ohmi ◽  
Kazuaki Takayama ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Film Formation ◽  
Ferroelectric Properties ◽  
Gate Insulator ◽  
Capacitance Voltage ◽  
Type C ◽  
Effect Transistor ◽  
P Type ◽  
First Time

ABSTRACTPentacene-based ferroelectric gate transistors with croconic acid (CrA) thin film was fabricated for the first time. The memory window (MW) of 1.9 V was obtained from the capacitance-voltage (C-V) characteristics of Al/CrA(50 nm)/SiO2/Si(100) metal-ferroelectric-insulator-semiconductor (MFIS) diode, where the deposition temperature of CrA was room temperature (RT). Butterfly type C-V characteristics was observed for Al/CrA(50 nm)/Al/SiO2/ Si(100) metal-ferroelectric-metal (MFM) diode. Furthermore, a pentacene-based p-type organic field-effect transistor (OFET) with CrA gate insulator was fabricated, and clockwise hysteresis loop was observed in ID-VG characteristic, which is attributed to the ferroelectric properties of CrA gate insulator.

Preparation of heteroepitaxial SrRuO3 thin film on Si substrate and microstructure of BaTiO3-NiFe2O4 epitaxial composite thin film deposited on the SrRuO3 bottom electrode using PLD

2011 ◽  
Vol 1308 ◽  
Author(s):  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Shigeki Sawamura ◽  
Desheng Fu ◽  
Kazuo Shinozaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Pressure ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Composite Thin Film ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Srruo3 Thin Film ◽  
Paramagnetic Properties

ABSTRACTA “0-0 type” multiferroic BaTiO3-NiFe2O4 (BT-NF) composite thin film was prepared on SrRuO3/(La,Sr)MnO3/CeO2/YSZ/Si(001) substrate using pulsed laser deposition (PLD). Epitaxial growth of the film was confirmed using x-ray pole figure measurements. Cross-sectional TEM observations revealed that the crystal structure and morphology of the BT-NF composite thin film depends on the oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr has smaller grains than that deposited at 1.0×10-1 Torr. The magnetic and ferroelectric properties of BT-NF composite thin film were correlated with the microstructure that was controlled by oxygen pressure during deposition. The film deposited at 1.0×10-2 Torr had paramagnetic properties with less polarization than the film deposited at 1.0×10-1 Torr.

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