Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique

2008 ◽  
Vol 600-603 ◽  
pp. 191-194
Author(s):  
Takashi Tanaka ◽  
Nobuyoshi Yashiro ◽  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Akihiro Yauchi
Keyword(s):  
Growth Rate ◽  
Single Crystals ◽  
Solution Method ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Threading Dislocation ◽  
Cold Crucible ◽  
Threading Dislocation Density ◽  
Growth Method

We have successfully grown 3C-SiC(111) single crystals 10mm x 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 105-106 /cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.

Growth of Large Diameter 4H-SiC by TSSG Technique

2013 ◽  
Vol 740-742 ◽  
pp. 65-68 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
N. Yashiro ◽  
Nobuhiro Okada ◽  
Kouji Moriguchi ◽  
Kazuhito Kamei ◽  
...  
Keyword(s):  
Growth Rate ◽  
Fluid Flow ◽  
Single Crystal ◽  
Large Diameter ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Morphological Stability ◽  
Control Member ◽  
Top Seeded Solution Growth

4H-SiC single crystal with 3-inch diameter was grown by top seeded solution growth (TSSG) technique. We used a new convection control member called “Immersion Guide (IG)” which causes the high and homogenous fluid flow in the solution. As a result, we achieved relatively high growth rate and morphological stability

High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent

2016 ◽  
Vol 858 ◽  
pp. 1210-1213 ◽  
Author(s):  
Shota Watanabe ◽  
Masashi Nagaya ◽  
Yukihisa Takeuchi ◽  
Kenta Aoyagi ◽  
S. Harada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Temperature Distribution ◽  
Numerical Analysis ◽  
Single Crystal ◽  
High Speed ◽  
Nitrogen Concentration ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
High Affinity

We achieved a high growth rate in solution growth of AlN single crystal by suppressing unintentional precipitations near the surface of solvent and by increasing the equilibrium nitrogen concentration in the solvent. In order to suppress unintentional precipitations, we made the solvent supersaturated just above the surface of the substrate by optimizing the composition of the solvent and the temperature distribution based on thermodynamic numerical analysis. In particular, we focused on interactions between nitrogen or aluminum and solvent elements, leading to the increase of the equilibrium nitrogen concentration. We selected chromium and cobalt due to their high affinity with nitrogen or aluminum. Consequently, we successfuly achieved growth rate as high as 200 μm/h in maximum.

SiC Solution Growth on Si Face with Extremely Low Density of Threading Screw Dislocations for Suppression of Polytype Transformation

2017 ◽  
Vol 897 ◽  
pp. 24-27 ◽  
Author(s):  
Kenta Murayama ◽  
Tsukasa Hori ◽  
S. Harada ◽  
S. Xiao ◽  
M. Tagawa ◽  
...  
Keyword(s):  
Temperature Distribution ◽  
Growth Temperature ◽  
Thick Layer ◽  
High Growth ◽  
Solution Growth ◽  
Threading Dislocation ◽  
Low Density ◽  
Screw Dislocations ◽  
Threading Dislocation Density ◽  
Polytype Transformation

In order to achieve a high-quality SiC crystal in solution growth, one of the most difficult issues is to grow a thick layer on Si face avoiding polytype transformation. In this case, two-dimensional nucleation, which leads to the polytype transformation, is frequently induced because a density of threading screw dislocations acting as a source of spiral step decreases and wide terraces form by step bunching as growth proceeds. Therefore, it is very difficult to stabilize the polytype of crystals grown with extremely low density of threading screw dislocations. In this study, we tried to overcome these problems by using specially designed seed crystal and optimizing growth temperature and temperature distribution. We successfully grew thick low-threading-dislocation density SiC crystal without polytype transformation under the condition of high growth temperature and homogeneous temperature distribution.

Developing Technologies of SiC Gas Source Growth Method

2016 ◽  
Vol 858 ◽  
pp. 23-28 ◽  
Author(s):  
Jun Kojima ◽  
Yuichiro Tokuda ◽  
Emi Makino ◽  
Naohiro Sugiyama ◽  
Norihiro Hoshino ◽  
...  
Keyword(s):  
Growth Rate ◽  
Mass Production ◽  
High Speed ◽  
High Growth ◽  
Maximum Growth ◽  
High Growth Rate ◽  
Average Growth ◽  
Gas Source ◽  
Growth Method ◽  
Production Technologies

In order to diffuse the use of SiC, mass-production technologies of SiC wafers are needed. It is easy to be understood that high-speed and long-sized growth technologies are connected directly with mass-production technologies. The gas source growth method such as HT-CVD has the possibilities and the potential of the high-speed and long-sized growth. In this article, it was clarified that the high growth rate were achieved by the control of the source gas partial pressures and by the gas boundary layers. The average growth rate was 1mm/h on the f4 inch-diameter crystal, and the maximum growth rate reached 3.6 mm/h on the 12.5x25 mm tetragon by the above gas control. The crystal qualities of the gas source methods were also evaluated the equivalent level in comparison with the sublimation method. Concerning the 1mm/h-growth f3 inch crystal, the densities of TSDs were kept in the 102 cm-2 levels from the seed to the upper-side of the ingot. Moreover, the ingot size increased year by year and a f4 inch x 43 mm sized ingot has been developed.

Control of the Growth Habit in the Na Flux Growth of GaN Single Crystals

2012 ◽  
Vol 717-720 ◽  
pp. 1291-1294 ◽  
Author(s):  
Mamoru Imade ◽  
Yusuke Konishi ◽  
Hideo Takazawa ◽  
Kosuke Murakami ◽  
Hiroki Imabayashi ◽  
...  
Keyword(s):  
Growth Rate ◽  
Gallium Nitride ◽  
Single Crystals ◽  
Growth Habit ◽  
High Growth ◽  
High Growth Rate ◽  
Flux Growth ◽  
Seeded Growth ◽  
Flux Method ◽  
Flux Composition

Seeded growth of gallium nitride (GaN) crystals on a spontaneously nucleated small GaN by the Na flux method was performed. In this study, we attempted to control the growth habit by changing the flux composition (Ga/Na) and by introducing a small amount of additives (Ca and Li). Our experiment clarified that a low Ga composition was preferred to grow high-crystallinity prismatic GaN crystals with a high growth rate. Furthermore, the transparent GaN single crystals with prism shape could be grown by the addition of Ca and Li.

Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity

2014 ◽  
Vol 778-780 ◽  
pp. 75-78 ◽  
Author(s):  
Takayuki Shirai ◽  
Katsunori Danno ◽  
Akinori Seki ◽  
Hidemitsu Sakamoto ◽  
Takeshi Bessho
Keyword(s):  
Growth Rate ◽  
Flat Surface ◽  
Low Cost ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Bulk Crystals ◽  
Low Resistivity ◽  
Al Content ◽  
P Type

P-type 4H-SiC bulk crystals have been grown at a high growth rate of 1.0 mm/h by solution growth using Si-Cr-Al based melt. The crystals grown from solution with an Al content of 10at% show low resistivity of 35 mcm, which is two orders of magnitude lower than commercialwafers (Resistivity: 2500 mcm). The low-resistivity crystals have flat surface and few solvent inclusions. These results indicate that solution growth is a suitable method for fabricating low-resistivity p-type substrates with low cost.

High quality homoepitaxial diamond thin film synthesis with high growth rate by a two-step growth method

1999 ◽  
Vol 8 (6) ◽  
pp. 1046-1049 ◽  
Author(s):  
D. Takeuchi ◽  
S. Yamanaka ◽  
H. Watanabe ◽  
S. Sawada ◽  
H. Ichinose ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
High Quality ◽  
Diamond Thin Film ◽  
Growth Method ◽  
Step Growth ◽  
Film Synthesis

Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique

2006 ◽  
Vol 527-529 ◽  
pp. 119-122 ◽  
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Nobuhiro Okada ◽  
Nobuyoshi Yashiro ◽  
Akihiro Yauchi ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
Graphite Crucible ◽  
High Growth Rate ◽  
Solution Growth ◽  
Growth Interface ◽  
Rotation Technique ◽  
Stable Growth ◽  
Crucible Rotation ◽  
Carbon Transport

We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT). It was confirmed that the growth rate exceeding 200 μm/hr was achievable by several ACRT conditions. This high growth rate might be due to the enhancement of the carbon transport from the graphite crucible to the growth interface using the ACRT. Moreover, the incorporation of inclusions of the Si-Ti solvent in the grown crystal was significantly suppressed by using the ACRT. It was thought that the intensive convection near the growth interface resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology. It was concluded that faster stable growth can be accomplished in the SiC solution growth using the ACRT.

Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique

2006 ◽  
pp. 119-122
Author(s):  
Kazuhiko Kusunoki ◽  
Kazuhito Kamei ◽  
Nobuhiro Okada ◽  
Nobuyoshi Yashiro ◽  
Akihiro Yauchi ◽  
...  
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Solution Growth ◽  
Rotation Technique ◽  
Crucible Rotation
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