Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity
2014 ◽
Vol 778-780
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pp. 75-78
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Keyword(s):
Low Cost
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P-type 4H-SiC bulk crystals have been grown at a high growth rate of 1.0 mm/h by solution growth using Si-Cr-Al based melt. The crystals grown from solution with an Al content of 10at% show low resistivity of 35 mcm, which is two orders of magnitude lower than commercialwafers (Resistivity: 2500 mcm). The low-resistivity crystals have flat surface and few solvent inclusions. These results indicate that solution growth is a suitable method for fabricating low-resistivity p-type substrates with low cost.
2013 ◽
Vol 740-742
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pp. 65-68
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Keyword(s):
2016 ◽
Vol 858
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pp. 1210-1213
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Keyword(s):
2006 ◽
Vol 527-529
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pp. 119-122
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Keyword(s):
2008 ◽
Vol 600-603
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pp. 191-194
Keyword(s):
2006 ◽
pp. 119-122
Keyword(s):
2007 ◽
Vol 352
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pp. 89-94
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Keyword(s):
2013 ◽
Vol 740-742
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pp. 323-326
Keyword(s):
2020 ◽
Vol 22
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pp. 100816
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Keyword(s):