Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique

We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT). It was confirmed that the growth rate exceeding 200 μm/hr was achievable by several ACRT conditions. This high growth rate might be due to the enhancement of the carbon transport from the graphite crucible to the growth interface using the ACRT. Moreover, the incorporation of inclusions of the Si-Ti solvent in the grown crystal was significantly suppressed by using the ACRT. It was thought that the intensive convection near the growth interface resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology. It was concluded that faster stable growth can be accomplished in the SiC solution growth using the ACRT.

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Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique

Silicon Carbide and Related Materials 2005 - Materials Science Forum ◽

10.4028/0-87849-425-1.119 ◽

2006 ◽

pp. 119-122

Author(s):

Kazuhiko Kusunoki ◽

Kazuhito Kamei ◽

Nobuhiro Okada ◽

Nobuyoshi Yashiro ◽

Akihiro Yauchi ◽

...

Keyword(s):

Growth Rate ◽

High Growth ◽

High Growth Rate ◽

Solution Growth ◽

Rotation Technique ◽

Crucible Rotation

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Solution Growth of Single Crystalline 6H-SiC from Si-Ti-C Ternary Solution

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.352.89 ◽

2007 ◽

Vol 352 ◽

pp. 89-94 ◽

Cited By ~ 11

Author(s):

Kenji Suzuki ◽

Kazuhiko Kusunoki ◽

Nobuyoshi Yashiro ◽

Nobuhiro Okada ◽

Kazuhito Kamei ◽

...

Keyword(s):

Growth Rate ◽

Single Crystal ◽

High Growth ◽

Graphite Crucible ◽

High Growth Rate ◽

Solution Growth ◽

Ternary Solution ◽

X Ray Diffraction ◽

Growth Interface ◽

X Ray

Solution growth of 6H-SiC single crystal from Si-Ti-C ternary solution using the accelerated crucible rotation technique (ACRT) was performed. The SiC growth rate exceeding 200 μm/hr was achieved in several ACRT conditions. Such a high growth rate can be ascribed to the enhancement of the carbon transport from the graphite crucible to the growth interface due to the use of the ACRT. The incorporation of inclusions of Si-Ti solvent in the grown SiC crystal was also significantly suppressed by using the ACRT. The intensive convection near the growth interface induced by the ACRT resulted in not only the marked increase of SiC growth rate but also the superior homogeneity in the surface morphology. It was concluded that faster stable growth could be accomplished in the SiC solution growth using the ACRT. The obtained SiC self-standing crystal exhibited homogeneous green colour without cracks and inclusions. We investigated the crystalline quality of the grown SiC crystal by means of X-ray diffraction. The, ω-scan rocking curves of (0006) reflection measured by X-ray diffraction provided the FWHM of 15-20 arc-second showing the excellent crystallinity of the solution grown 6H-SiC single crystal.

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Growth of Large Diameter 4H-SiC by TSSG Technique

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.65 ◽

2013 ◽

Vol 740-742 ◽

pp. 65-68 ◽

Cited By ~ 12

Author(s):

Kazuhiko Kusunoki ◽

N. Yashiro ◽

Nobuhiro Okada ◽

Kouji Moriguchi ◽

Kazuhito Kamei ◽

...

Keyword(s):

Growth Rate ◽

Fluid Flow ◽

Single Crystal ◽

Large Diameter ◽

High Growth ◽

High Growth Rate ◽

Solution Growth ◽

Morphological Stability ◽

Control Member ◽

High-Speed Solution Growth of Single Crystal AlN from Cr-Co-Al Solvent

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.1210 ◽

2016 ◽

Vol 858 ◽

pp. 1210-1213 ◽

Cited By ~ 4

Author(s):

Shota Watanabe ◽

Masashi Nagaya ◽

Yukihisa Takeuchi ◽

Kenta Aoyagi ◽

S. Harada ◽

...

Keyword(s):

Growth Rate ◽

Temperature Distribution ◽

Numerical Analysis ◽

Single Crystal ◽

High Speed ◽

Nitrogen Concentration ◽

High Growth ◽

High Growth Rate ◽

Solution Growth ◽

High Affinity

We achieved a high growth rate in solution growth of AlN single crystal by suppressing unintentional precipitations near the surface of solvent and by increasing the equilibrium nitrogen concentration in the solvent. In order to suppress unintentional precipitations, we made the solvent supersaturated just above the surface of the substrate by optimizing the composition of the solvent and the temperature distribution based on thermodynamic numerical analysis. In particular, we focused on interactions between nitrogen or aluminum and solvent elements, leading to the increase of the equilibrium nitrogen concentration. We selected chromium and cobalt due to their high affinity with nitrogen or aluminum. Consequently, we successfuly achieved growth rate as high as 200 μm/h in maximum.

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Solution Growth of p-Type 4H-SiC Bulk Crystals with Low Resistivity

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.75 ◽

2014 ◽

Vol 778-780 ◽

pp. 75-78 ◽

Cited By ~ 9

Author(s):

Takayuki Shirai ◽

Katsunori Danno ◽

Akinori Seki ◽

Hidemitsu Sakamoto ◽

Takeshi Bessho

Keyword(s):

Growth Rate ◽

Flat Surface ◽

Low Cost ◽

High Growth ◽

High Growth Rate ◽

Solution Growth ◽

Bulk Crystals ◽

Low Resistivity ◽

Al Content ◽

P Type

P-type 4H-SiC bulk crystals have been grown at a high growth rate of 1.0 mm/h by solution growth using Si-Cr-Al based melt. The crystals grown from solution with an Al content of 10at% show low resistivity of 35 mcm, which is two orders of magnitude lower than commercialwafers (Resistivity: 2500 mcm). The low-resistivity crystals have flat surface and few solvent inclusions. These results indicate that solution growth is a suitable method for fabricating low-resistivity p-type substrates with low cost.

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Solution Growth of 3C-SiC Single Crystals by Cold Crucible Technique

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.191 ◽

2008 ◽

Vol 600-603 ◽

pp. 191-194

Author(s):

Takashi Tanaka ◽

Nobuyoshi Yashiro ◽

Kazuhiko Kusunoki ◽

Kazuhito Kamei ◽

Akihiro Yauchi

Keyword(s):

Growth Rate ◽

Single Crystals ◽

Solution Method ◽

High Growth ◽

High Growth Rate ◽

Solution Growth ◽

Threading Dislocation ◽

Cold Crucible ◽

Threading Dislocation Density ◽

Growth Method

We have successfully grown 3C-SiC(111) single crystals 10mm x 10mm in dimension on 6H-SiC(0001) substrate by the solution growth method using cold crucible technique. The growth rate of 60μm/hr was achieved. The use of Si-Ti-C ternary solution as well as the electromagnetic stirring are responsible for the relatively high growth rate in solution method. The threading dislocation density is low and the etch pit density amounts to 105-106 /cm2 at the lowest region. Polytype of the grown layer has changed from 3C to 6H with an increase in the dip depth of substrate. A mathematical model was applied to get better understanding of what happened in the crucible.

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Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.323 ◽

2013 ◽

Vol 740-742 ◽

pp. 323-326

Author(s):

Kassem Alassaad ◽

François Cauwet ◽

Davy Carole ◽

Véronique Soulière ◽

Gabriel Ferro

Keyword(s):

Growth Rate ◽

High Growth ◽

High Growth Rate ◽

Carbon Precursor ◽

Growth Limitation ◽

Vapor Liquid Solid ◽

Partial Pressures ◽

Vapor Liquid Solid Mechanism ◽

Vls Growth ◽

Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

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